JP7389472B2 - 半導体デバイスの製造方法及び半導体デバイス - Google Patents

半導体デバイスの製造方法及び半導体デバイス Download PDF

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JP7389472B2
JP7389472B2 JP2020014220A JP2020014220A JP7389472B2 JP 7389472 B2 JP7389472 B2 JP 7389472B2 JP 2020014220 A JP2020014220 A JP 2020014220A JP 2020014220 A JP2020014220 A JP 2020014220A JP 7389472 B2 JP7389472 B2 JP 7389472B2
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gallium
diamond
diamond substrate
semiconductor device
based semiconductor
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JP2021013007A (ja
JP2021013007A5 (https=
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剣波 梁
直輝 重川
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University Public Corporation Osaka
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University Public Corporation Osaka
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JP2020014220A 2019-07-04 2020-01-30 半導体デバイスの製造方法及び半導体デバイス Active JP7389472B2 (ja)

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JP2021013007A5 JP2021013007A5 (https=) 2022-05-20
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JP2022184075A (ja) * 2021-05-31 2022-12-13 国立研究開発法人産業技術総合研究所 モザイクダイヤモンドウェハと異種半導体との接合体及びその製造方法、並びに、異種半導体との接合体用モザイクダイヤモンドウェハ
JP7741539B2 (ja) * 2021-08-10 2025-09-18 国立研究開発法人産業技術総合研究所 半導体素子および半導体素子の製造方法
US12424594B2 (en) 2022-03-31 2025-09-23 Raytheon Company Integrated diamond substrate for thermal management
WO2024247933A1 (ja) * 2023-06-01 2024-12-05 日本碍子株式会社 積層基板
WO2025017863A1 (ja) * 2023-07-19 2025-01-23 三菱電機株式会社 半導体装置および半導体装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102675A (ja) 1999-09-29 2001-04-13 Toshiba Corp 半導体発光素子
JP2007189171A (ja) 2006-01-16 2007-07-26 Musashino Eng:Kk ダイヤモンドヒートスプレッダの常温接合方法，及び半導体デバイスの放熱部
JP2008528420A (ja) 2005-01-26 2008-07-31 アポロ ダイヤモンド，インク ダイヤモンド上の窒化ガリウム発光デバイス
WO2018143344A1 (ja) 2017-02-02 2018-08-09 三菱電機株式会社 半導体製造方法および半導体製造装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102675A (ja) 1999-09-29 2001-04-13 Toshiba Corp 半導体発光素子
JP2008528420A (ja) 2005-01-26 2008-07-31 アポロ ダイヤモンド，インク ダイヤモンド上の窒化ガリウム発光デバイス
JP2007189171A (ja) 2006-01-16 2007-07-26 Musashino Eng:Kk ダイヤモンドヒートスプレッダの常温接合方法，及び半導体デバイスの放熱部
WO2018143344A1 (ja) 2017-02-02 2018-08-09 三菱電機株式会社 半導体製造方法および半導体製造装置

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