JP7379119B2 - 光電変換装置、光電変換システム、移動体、光電変換装置の検査方法 - Google Patents

光電変換装置、光電変換システム、移動体、光電変換装置の検査方法 Download PDF

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Publication number
JP7379119B2
JP7379119B2 JP2019215788A JP2019215788A JP7379119B2 JP 7379119 B2 JP7379119 B2 JP 7379119B2 JP 2019215788 A JP2019215788 A JP 2019215788A JP 2019215788 A JP2019215788 A JP 2019215788A JP 7379119 B2 JP7379119 B2 JP 7379119B2
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Prior art keywords
photoelectric conversion
digital signal
signal
pixel circuit
conversion device
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JP2019215788A
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Japanese (ja)
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JP2021087143A (ja
JP2021087143A5 (https=
Inventor
哲也 板野
慎也 中野
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Canon Inc
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Canon Inc
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Priority to JP2019215788A priority Critical patent/JP7379119B2/ja
Priority to US17/103,774 priority patent/US11546538B2/en
Publication of JP2021087143A publication Critical patent/JP2021087143A/ja
Publication of JP2021087143A5 publication Critical patent/JP2021087143A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/673—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction by using reference sources
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Mechanical Engineering (AREA)
JP2019215788A 2019-11-28 2019-11-28 光電変換装置、光電変換システム、移動体、光電変換装置の検査方法 Active JP7379119B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019215788A JP7379119B2 (ja) 2019-11-28 2019-11-28 光電変換装置、光電変換システム、移動体、光電変換装置の検査方法
US17/103,774 US11546538B2 (en) 2019-11-28 2020-11-24 Photoelectric conversion apparatus, photoelectric conversion system, moving body, and method for checking photoelectric conversion apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019215788A JP7379119B2 (ja) 2019-11-28 2019-11-28 光電変換装置、光電変換システム、移動体、光電変換装置の検査方法

Publications (3)

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JP2021087143A JP2021087143A (ja) 2021-06-03
JP2021087143A5 JP2021087143A5 (https=) 2022-11-25
JP7379119B2 true JP7379119B2 (ja) 2023-11-14

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JP (1) JP7379119B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025204321A1 (ja) * 2024-03-26 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 撮像装置、撮像装置制御方法及び撮像装置制御プログラム

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006120815A1 (ja) 2005-05-11 2006-11-16 Matsushita Electric Industrial Co., Ltd. 固体撮像装置、カメラ、自動車および監視装置
JP2014075618A (ja) 2012-10-02 2014-04-24 Canon Inc 光電変換装置、撮像システム、光電変換装置の検査方法および撮像システムの製造方法
JP2019009768A (ja) 2017-06-23 2019-01-17 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2019029694A (ja) 2017-07-25 2019-02-21 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2019075440A (ja) 2017-10-13 2019-05-16 キヤノン株式会社 光検出装置、撮像装置、及び撮像システム

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6145655B2 (ja) * 2012-12-18 2017-06-14 パナソニックＩｐマネジメント株式会社 半導体光検出器
JP6968608B2 (ja) 2016-09-30 2021-11-17 キヤノン株式会社 撮像装置、撮像システム、および、移動体
JP2018148528A (ja) 2017-03-09 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
JP2019075394A (ja) 2017-10-12 2019-05-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、電子装置
JP7007965B2 (ja) 2018-03-19 2022-01-25 キヤノン株式会社 撮像素子およびそれを有する電子機器
US10616512B2 (en) * 2018-07-27 2020-04-07 Wisconsin Alumni Research Foundation Systems, methods, and media for high dynamic range imaging using dead-time-limited single photon detectors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006120815A1 (ja) 2005-05-11 2006-11-16 Matsushita Electric Industrial Co., Ltd. 固体撮像装置、カメラ、自動車および監視装置
JP2014075618A (ja) 2012-10-02 2014-04-24 Canon Inc 光電変換装置、撮像システム、光電変換装置の検査方法および撮像システムの製造方法
JP2019009768A (ja) 2017-06-23 2019-01-17 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法
JP2019029694A (ja) 2017-07-25 2019-02-21 キヤノン株式会社 撮像装置、撮像システム、移動体
JP2019075440A (ja) 2017-10-13 2019-05-16 キヤノン株式会社 光検出装置、撮像装置、及び撮像システム

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US11546538B2 (en) 2023-01-03
US20210168319A1 (en) 2021-06-03

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