JP7331833B2 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
半導体発光素子および半導体発光素子の製造方法 Download PDFInfo
- Publication number
- JP7331833B2 JP7331833B2 JP2020507437A JP2020507437A JP7331833B2 JP 7331833 B2 JP7331833 B2 JP 7331833B2 JP 2020507437 A JP2020507437 A JP 2020507437A JP 2020507437 A JP2020507437 A JP 2020507437A JP 7331833 B2 JP7331833 B2 JP 7331833B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- laminate
- layer
- semiconductor layer
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 187
- 238000000034 method Methods 0.000 title claims description 28
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000000758 substrate Substances 0.000 claims description 44
- 229910000679 solder Inorganic materials 0.000 claims description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 235
- 238000005253 cladding Methods 0.000 description 37
- 238000005516 engineering process Methods 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000002950 deficient Effects 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000003475 lamination Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000001151 other effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017750 AgSn Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
- H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
1.第1の実施の形態
切欠部の底面に第1導電型半導体層が露出された半導体発光素子
2.第2の実施の形態
切欠部の底面に基板が露出された半導体発光素子
[半導体発光素子10の構成]
図1は、本技術の第1の実施の形態に係る半導体発光素子(半導体発光素子10)の模式的な断面構成を表している。この半導体発光素子10は、例えば、可視領域の波長の光を出射する半導体レーザであり、基板11、積層体20、支持部材30および半田層40を有している。この半導体発光素子10は、いわゆるジャンクションダウン方式で実装されたものであり、支持部材30上に、半田層40、積層体20および基板11がこの順に設けられている。
このような構成を有する半導体発光素子10は、例えば次のようにして製造することができる。
この半導体発光素子10では、リッジ部15のp側コンタクト電極層21とn側電極層24との間に所定の電圧が印加されると、リッジ部15により電流狭窄された電流が電流注入領域(発光領域)に注入される。これにより電子と正孔の再結合による発光が生じる。この光は、一対の反射鏡膜により反射され、一往復したときの位相の変化が2πの整数倍となる波長でレーザ発振を生じ、ビームとして外部に出射される。
図7は、本技術の第2の実施の形態に係る半導体発光素子(半導体発光素子10A)の断面構成を模式的に表したものである。この半導体発光素子10Aの切欠部Nの底面には、基板11が露出されている。この点を除き、半導体発光素子10Aは、上記第1の実施の形態の半導体発光素子10と同様の構成を有し、その作用および効果も同様である。
(1)
第1導電型半導体層、活性層および第2導電型半導体層をこの順に有し、対向する一対の側面が設けられた積層体と、
前記積層体の前記一対の側面の少なくとも一方に設けられ、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とが前記積層体の積層方向に切り取られることで前記第1導電型半導体層が露出された底面を有する切欠部と、
前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように設けられると共にアルミニウム(Al)、ホウ素(B)または炭素(C)を含む、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域と
を備えた半導体発光素子。
(2)
前記一対の側面の両方に前記切欠部が設けられている
前記(1)に記載の半導体発光素子。
(3)
更に、前記第1導電型半導体層および前記活性層を間にして前記第2導電型半導体層に対向する基板を有する
前記(1)または(2)に記載の半導体発光素子。
(4)
更に、前記活性層および前記第2導電型半導体層を間にして前記第1導電型半導体層に対向する支持部材と、
前記支持部材と前記積層体との間に設けられた半田層とを含む
前記(1)ないし(3)のうちのいずれか1つに記載の半導体発光素子。
(5)
前記半田層は、前記支持部材と前記積層体との間に、前記積層体よりも拡幅して設けられている
前記(4)に記載の半導体発光素子。
(6)
更に、前記切欠部を覆う絶縁膜を有する
前記(1)ないし(5)のうちのいずれか1つに記載の半導体発光素子。
(7)
半導体レーザとして機能する
前記(1)ないし(6)のうちのいずれか1つに記載の半導体発光素子。
(8)
前記第2導電型半導体層には、一方向に延在するリッジ部が設けられ、
前記一対の側面は、前記リッジ部の延在方向と平行に設けられている
前記(1)ないし(7)のうちのいずれか1つに記載の半導体発光素子。
(9)
前記高抵抗領域は、前記第1導電型半導体層に設けられている
前記(1)ないし(8)のうちのいずれか1つに記載の半導体発光素子。
(10)
前記高抵抗領域は、前記第1導電型半導体層、前記活性層および前記第2導電型半導体層に設けられている
前記(1)ないし(9)のうちのいずれか1つに記載の半導体発光素子。
(11)
基板と、
前記基板上に設けられ、第1導電型半導体層、活性層および第2導電型半導体層をこの順に有するとともに、対向する一対の側面が設けられた積層体と、
前記積層体の前記一対の側面の少なくとも一方に設けられ、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とが前記積層体の積層方向に切り取られることで前記第1導電型半導体層が露出された底面を有する切欠部と、
前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように設けられると共にアルミニウム(Al)、ホウ素(B)または炭素(C)を含む、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域と
を備えた半導体発光素子。
(12)
第1導電型半導体層、活性層および第2導電型半導体層をこの順に有する積層体を形成し、
前記積層体の少なくとも1つの側面に、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とを前記積層体の積層方向に切り取ることにより前記第1導電型半導体層が露出された底面を有する切欠部を形成し、
前記切欠部の前記底面にイオン注入を行うことにより、前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域を形成する
半導体発光素子の製造方法。
(13)
更に、前記活性層および前記第2導電型半導体層を間にして前記第1導電型半導体層に対向する支持部材を配置し、
前記支持部材と前記積層体とを半田層を用いて接合する
前記(12)に記載の半導体発光素子の製造方法。
(14)
基板上に、第1導電型半導体層、活性層および第2導電型半導体層をこの順に有する積層体を形成し、
前記積層体の少なくとも1つの側面に、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とを前記積層体の積層方向に切り取ることにより前記第1導電型半導体層が露出された底面を有する切欠部を形成し、
前記切欠部の前記底面にイオン注入を行うことにより、前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域を形成する
半導体発光素子の製造方法。
Claims (14)
- 第1導電型半導体層、活性層および第2導電型半導体層をこの順に有し、対向する一対の側面が設けられた積層体と、
前記積層体の前記一対の側面の少なくとも一方に設けられ、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とが前記積層体の積層方向に切り取られることで前記第1導電型半導体層が露出された底面を有する切欠部と、
前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように設けられると共にアルミニウム(Al)、ホウ素(B)または炭素(C)を含む、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域と
を備えた半導体発光素子。 - 前記一対の側面の両方に前記切欠部が設けられている
請求項1に記載の半導体発光素子。 - 更に、前記第1導電型半導体層および前記活性層を間にして前記第2導電型半導体層に対向する基板を有する
請求項1に記載の半導体発光素子。 - 更に、前記活性層および前記第2導電型半導体層を間にして前記第1導電型半導体層に対向する支持部材と、
前記支持部材と前記積層体との間に設けられた半田層とを含む
請求項1に記載の半導体発光素子。 - 前記半田層は、前記支持部材と前記積層体との間に、前記積層体よりも拡幅して設けられている
請求項4に記載の半導体発光素子。 - 更に、前記切欠部を覆う絶縁膜を有する
請求項1に記載の半導体発光素子。 - 半導体レーザとして機能する
請求項1に記載の半導体発光素子。 - 前記第2導電型半導体層には、一方向に延在するリッジ部が設けられ、
前記一対の側面は、前記リッジ部の延在方向と平行に設けられている
請求項1に記載の半導体発光素子。 - 前記高抵抗領域は、前記第1導電型半導体層に設けられている
請求項1に記載の半導体発光素子。 - 前記高抵抗領域は、前記第1導電型半導体層、前記活性層および前記第2導電型半導体層に設けられている
請求項1に記載の半導体発光素子。 - 基板と、
前記基板上に設けられ、第1導電型半導体層、活性層および第2導電型半導体層をこの順に有するとともに、対向する一対の側面が設けられた積層体と、
前記積層体の前記一対の側面の少なくとも一方に設けられ、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とが前記積層体の積層方向に切り取られることで前記第1導電型半導体層が露出された底面を有する切欠部と、
前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように設けられると共にアルミニウム(Al)、ホウ素(B)または炭素(C)を含む、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域と
を備えた半導体発光素子。 - 第1導電型半導体層、活性層および第2導電型半導体層をこの順に有する積層体を形成し、
前記積層体の少なくとも1つの側面に、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とを前記積層体の積層方向に切り取ることにより前記第1導電型半導体層が露出された底面を有する切欠部を形成し、
前記切欠部の前記底面にイオン注入を行うことにより、前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域を形成する
半導体発光素子の製造方法。 - 更に、前記活性層および前記第2導電型半導体層を間にして前記第1導電型半導体層に対向する支持部材を配置し、
前記支持部材と前記積層体とを半田層を用いて接合する
請求項12に記載の半導体発光素子の製造方法。 - 基板上に、第1導電型半導体層、活性層および第2導電型半導体層をこの順に有する積層体を形成し、
前記積層体の少なくとも1つの側面に、前記第2導電型半導体層と前記活性層と前記第1導電型半導体層の一部とを前記積層体の積層方向に切り取ることにより前記第1導電型半導体層が露出された底面を有する切欠部を形成し、
前記切欠部の前記底面にイオン注入を行うことにより、前記積層体の前記一対の側面のうちの前記切欠部が形成された第1部分よりも前記積層方向と直交する面内方向に突出した第2部分を覆うように、前記積層体の電気抵抗よりも高い電気抵抗を有する高抵抗領域を形成する
半導体発光素子の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018050642 | 2018-03-19 | ||
JP2018050642 | 2018-03-19 | ||
PCT/JP2019/005605 WO2019181309A1 (ja) | 2018-03-19 | 2019-02-15 | 半導体発光素子および半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2019181309A1 JPWO2019181309A1 (ja) | 2021-03-11 |
JP7331833B2 true JP7331833B2 (ja) | 2023-08-23 |
Family
ID=67987658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020507437A Active JP7331833B2 (ja) | 2018-03-19 | 2019-02-15 | 半導体発光素子および半導体発光素子の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11929591B2 (ja) |
JP (1) | JP7331833B2 (ja) |
DE (1) | DE112019001439T5 (ja) |
WO (1) | WO2019181309A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102601950B1 (ko) * | 2018-11-16 | 2023-11-14 | 삼성전자주식회사 | Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치 |
US20210210930A1 (en) * | 2020-01-08 | 2021-07-08 | Applied Optoelectronics, Inc. | Techniques for electrically isolating n and p-side regions of a semiconductor laser chip for p-side down bonding |
DE102021106238A1 (de) * | 2021-03-15 | 2022-09-15 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005311309A (ja) | 2004-03-26 | 2005-11-04 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP2006073618A (ja) | 2004-08-31 | 2006-03-16 | Toyoda Gosei Co Ltd | 光学素子およびその製造方法 |
US20070002914A1 (en) | 2005-06-27 | 2007-01-04 | Samsung Electronics Co., Ltd. | Semiconductor laser diode having an asymmetric optical waveguide layer |
JP2009231820A (ja) | 2008-02-29 | 2009-10-08 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
JP2012169435A (ja) | 2011-02-14 | 2012-09-06 | Stanley Electric Co Ltd | 光半導体素子 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5199986A (ja) * | 1975-02-28 | 1976-09-03 | Fujitsu Ltd | |
JP4001956B2 (ja) | 1996-07-25 | 2007-10-31 | ソニー株式会社 | 半導体発光装置 |
JPH10294493A (ja) * | 1997-02-21 | 1998-11-04 | Toshiba Corp | 半導体発光デバイス |
US20060001035A1 (en) * | 2004-06-22 | 2006-01-05 | Toyoda Gosei Co., Ltd. | Light emitting element and method of making same |
JP2008515201A (ja) * | 2004-09-23 | 2008-05-08 | セミネックス・コーポレーション | 高エネルギー赤外半導体ダイオード発光デバイス |
WO2006138465A2 (en) * | 2005-06-17 | 2006-12-28 | Goldeneye, Inc. | Light emitting diodes with reflective electrode and side electrode |
US7939351B2 (en) * | 2005-09-16 | 2011-05-10 | Showa Denko K.K. | Production method for nitride semiconductor light emitting device |
JP5288852B2 (ja) * | 2008-03-21 | 2013-09-11 | スタンレー電気株式会社 | 半導体素子の製造方法 |
WO2009117845A1 (en) * | 2008-03-25 | 2009-10-01 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting device with double-sided passivation |
KR101039904B1 (ko) * | 2010-01-15 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
US8563334B2 (en) * | 2010-09-14 | 2013-10-22 | Tsmc Solid State Lighting Ltd. | Method to remove sapphire substrate |
JP5139576B1 (ja) * | 2011-12-09 | 2013-02-06 | 株式会社東芝 | 半導体発光素子の製造方法 |
US9583466B2 (en) * | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US10032757B2 (en) * | 2015-09-04 | 2018-07-24 | Hong Kong Beida Jade Bird Display Limited | Projection display system |
US10768515B2 (en) * | 2017-12-12 | 2020-09-08 | Tectus Corporation | Method for manufacturing ultra-dense LED projector using thinned gallium nitride |
-
2019
- 2019-02-15 WO PCT/JP2019/005605 patent/WO2019181309A1/ja active Application Filing
- 2019-02-15 US US16/979,606 patent/US11929591B2/en active Active
- 2019-02-15 JP JP2020507437A patent/JP7331833B2/ja active Active
- 2019-02-15 DE DE112019001439.0T patent/DE112019001439T5/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005311309A (ja) | 2004-03-26 | 2005-11-04 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
JP2006073618A (ja) | 2004-08-31 | 2006-03-16 | Toyoda Gosei Co Ltd | 光学素子およびその製造方法 |
US20070002914A1 (en) | 2005-06-27 | 2007-01-04 | Samsung Electronics Co., Ltd. | Semiconductor laser diode having an asymmetric optical waveguide layer |
JP2009231820A (ja) | 2008-02-29 | 2009-10-08 | Sanyo Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
JP2012169435A (ja) | 2011-02-14 | 2012-09-06 | Stanley Electric Co Ltd | 光半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
WO2019181309A1 (ja) | 2019-09-26 |
US20210044088A1 (en) | 2021-02-11 |
US11929591B2 (en) | 2024-03-12 |
DE112019001439T5 (de) | 2020-12-10 |
JPWO2019181309A1 (ja) | 2021-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4352337B2 (ja) | 半導体レーザおよび半導体レーザ装置 | |
US6853663B2 (en) | Efficiency GaN-based light emitting devices | |
TWI420687B (zh) | 偏光反向之三族氮化物發光裝置 | |
US20210249839A1 (en) | Semiconductor Laser Diode | |
US9735314B2 (en) | Nitride semiconductor light emitting device | |
US20110134948A1 (en) | Semiconductor laser chip, semiconductor laser device, and semiconductor laser chip manufacturing method | |
JP7331833B2 (ja) | 半導体発光素子および半導体発光素子の製造方法 | |
CN112088431A (zh) | 微米尺寸的发光二极管设计 | |
US8175128B2 (en) | Semiconductor laser element and semiconductor laser device | |
JP2021170673A (ja) | 端面発光型のレーザバー | |
JP2018125404A (ja) | 面発光レーザ素子 | |
US12046872B2 (en) | Surface emitting laser, surface emitting laser device, light source device, and detection apparatus | |
US9196793B2 (en) | Vertical nitride semiconductor device and method for manufacturing same | |
US20230261438A1 (en) | Semiconductor laser and semiconductor laser device | |
US8742395B2 (en) | Semiconductor light emitting device | |
US10672945B2 (en) | Method for manufacturing light emitting device | |
KR102103515B1 (ko) | 레이저 다이오드 구조 및 제조 방법 | |
US20230335972A1 (en) | Semiconductor laser and semiconductor laser device | |
US9356424B2 (en) | Semiconductor light emitting element and semiconductor light emitting device | |
WO2023106080A1 (ja) | 垂直共振器型発光素子 | |
US20240162686A1 (en) | Semiconductor laser | |
US20220416509A1 (en) | Light emitting device and method of manufacturing light emitting device | |
JP2010098001A (ja) | 半導体レーザ装置およびその製造方法 | |
JP2004072098A (ja) | 面発光半導体レーザチップおよびその製造方法 | |
JP2008130664A (ja) | 半導体発光素子および発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221213 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230206 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230328 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230519 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230711 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230724 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7331833 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |