JP7330961B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器 Download PDF

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Publication number
JP7330961B2
JP7330961B2 JP2020524940A JP2020524940A JP7330961B2 JP 7330961 B2 JP7330961 B2 JP 7330961B2 JP 2020524940 A JP2020524940 A JP 2020524940A JP 2020524940 A JP2020524940 A JP 2020524940A JP 7330961 B2 JP7330961 B2 JP 7330961B2
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Prior art keywords
circuit
terminal
transistor
electrically connected
input
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JP2020524940A
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English (en)
Japanese (ja)
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JPWO2019239246A1 (ja
JPWO2019239246A5 (https=
Inventor
肇 木村
義元 黒川
達則 井上
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JPWO2019239246A1 publication Critical patent/JPWO2019239246A1/ja
Publication of JPWO2019239246A5 publication Critical patent/JPWO2019239246A5/ja
Priority to JP2023130363A priority Critical patent/JP7562785B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/30—Modifications for providing a predetermined threshold before switching
    • H03K17/302—Modifications for providing a predetermined threshold before switching in field-effect transistor switches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Neurology (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Computational Linguistics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Memory System (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
JP2020524940A 2018-06-15 2019-05-31 半導体装置、及び電子機器 Active JP7330961B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023130363A JP7562785B2 (ja) 2018-06-15 2023-08-09 半導体装置、電子機器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018114294 2018-06-15
JP2018114294 2018-06-15
JP2018144980 2018-08-01
JP2018144980 2018-08-01
PCT/IB2019/054515 WO2019239246A1 (ja) 2018-06-15 2019-05-31 半導体装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023130363A Division JP7562785B2 (ja) 2018-06-15 2023-08-09 半導体装置、電子機器

Publications (3)

Publication Number Publication Date
JPWO2019239246A1 JPWO2019239246A1 (ja) 2021-07-26
JPWO2019239246A5 JPWO2019239246A5 (https=) 2022-05-13
JP7330961B2 true JP7330961B2 (ja) 2023-08-22

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JP2020524940A Active JP7330961B2 (ja) 2018-06-15 2019-05-31 半導体装置、及び電子機器
JP2023130363A Active JP7562785B2 (ja) 2018-06-15 2023-08-09 半導体装置、電子機器

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JP2023130363A Active JP7562785B2 (ja) 2018-06-15 2023-08-09 半導体装置、電子機器

Country Status (3)

Country Link
US (2) US11424737B2 (https=)
JP (2) JP7330961B2 (https=)
WO (1) WO2019239246A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11515873B2 (en) 2018-06-29 2022-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US20220326384A1 (en) * 2019-08-23 2022-10-13 Semiconductor Energy Laboratory Co., Ltd. Imaging device, distance estimation device, and moving object
JP2023001953A (ja) * 2021-06-22 2023-01-10 キオクシア株式会社 半導体集積回路及び演算システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150028930A1 (en) 2013-07-24 2015-01-29 Stmicroelectronics Sa Variable Delay Element
JP2017228295A (ja) 2016-06-20 2017-12-28 東芝メモリ株式会社 演算装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62272619A (ja) * 1986-05-21 1987-11-26 Hitachi Ltd 遅延回路
JP3873448B2 (ja) * 1998-04-23 2007-01-24 株式会社デンソー 論理演算回路
JP2000022160A (ja) * 1998-07-06 2000-01-21 Hitachi Ltd 半導体集積回路及びその製造方法
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US8878589B2 (en) 2011-06-30 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8710505B2 (en) 2011-08-05 2014-04-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6013084B2 (ja) * 2012-08-24 2016-10-25 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR101985953B1 (ko) * 2013-06-17 2019-06-05 에스케이하이닉스 주식회사 펌핑 회로
JP5885719B2 (ja) * 2013-09-09 2016-03-15 株式会社東芝 識別装置および演算装置
US9397637B2 (en) 2014-03-06 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Voltage controlled oscillator, semiconductor device, and electronic device
KR102352633B1 (ko) 2014-07-25 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발진 회로 및 그것을 포함하는 반도체 장치
KR20180063084A (ko) * 2015-09-30 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10038402B2 (en) 2015-10-30 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP2017108397A (ja) * 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
TWI730091B (zh) * 2016-05-13 2021-06-11 日商半導體能源研究所股份有限公司 半導體裝置
US10410571B2 (en) * 2016-08-03 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP7073090B2 (ja) 2016-12-28 2022-05-23 株式会社半導体エネルギー研究所 ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150028930A1 (en) 2013-07-24 2015-01-29 Stmicroelectronics Sa Variable Delay Element
JP2017228295A (ja) 2016-06-20 2017-12-28 東芝メモリ株式会社 演算装置

Also Published As

Publication number Publication date
US11848664B2 (en) 2023-12-19
JP2023166390A (ja) 2023-11-21
JPWO2019239246A1 (ja) 2021-07-26
US11424737B2 (en) 2022-08-23
US20220385284A1 (en) 2022-12-01
JP7562785B2 (ja) 2024-10-07
WO2019239246A1 (ja) 2019-12-19
US20210257016A1 (en) 2021-08-19

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