JP7308973B2 - 炭化ケイ素-窒化ケイ素複合材料の製造方法及びそれによる炭化ケイ素-窒化ケイ素複合材料 - Google Patents
炭化ケイ素-窒化ケイ素複合材料の製造方法及びそれによる炭化ケイ素-窒化ケイ素複合材料 Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims description 94
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 24
- 229910052710 silicon Inorganic materials 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 8
- 239000010703 silicon Substances 0.000 title description 8
- 230000035939 shock Effects 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 229910052799 carbon Inorganic materials 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 238000005229 chemical vapour deposition Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 47
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 43
- 235000012431 wafers Nutrition 0.000 description 16
- 239000000463 material Substances 0.000 description 14
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
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Description
より詳細には、CVD方式で熱衝撃強度が高い素材(Δ℃であるSi3N4を共に成長させてSiC素材の熱衝撃強度を高め、半導体工程にも適用可能な高純度のSiC-Si3N4複合材料を提供することができる。
以下、実施形態及び比較例により本発明をより詳細に説明する。
CVD方式に基づいてSi3N4とSiCが形成される温度である1100℃~1600℃においてSi、N、Cソースを投入し、SiC-Si3N4複合素材を製造した。
Claims (7)
- 鋳型を準備するステップと、
前記鋳型上に1100℃~1600℃で、Si、N、及びCを含む原料ガスを導入してSiC-Si3N4複合材料を形成するステップと、
を含み、
前記SiC-Si3N4複合材料のうちSi3N4は、40体積%~70体積%であり、前記SiC-Si 3 N 4 複合材料を形成するステップはCVD法に基づく、SiC-Si3N4複合材料の製造方法。 - 前記導入する原料ガスのうち、窒素(N)と炭素(C)原料ガスの窒素(N)成分と炭素(C)成分が1:1である場合、Nソース/Cソースの体積比率が0.4~2である、請求項1に記載のSiC-Si3N4複合材料の製造方法。
- 前記SiC-Si3N4複合材料の熱衝撃強度は、500℃~860℃である、請求項1に記載のSiC-Si3N4複合材料の製造方法。
- 前記SiC-Si3N4複合材料の熱衝撃強度は、600℃~860℃である、請求項1に記載のSiC-Si3N4複合材料の製造方法。
- SiC及びSi3N4を含み、熱衝撃強度が600℃~860℃であるSiC-Si3N4複合材料であって、
前記SiC-Si3N4複合材料のうち前記Si3N4は、40体積%~70体積%であり、前記SiC-Si 3 N 4 複合材料はCVD法に基づいて形成される、SiC-Si3N4複合材料。 - 前記SiC-Si3N4複合材料は、不定形のSiC結晶粒と針状構造のSi3N4結晶粒が混合されている、請求項5に記載のSiC-Si3N4複合材料。
- 前記SiC-Si3N4複合材料のうち、前記Si3N4の体積比が68体積%~70体積%である場合、Si3N4/SiCメインピークの回折強度比は0.2~1.5である、請求項5に記載のSiC-Si3N4複合材料。
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KR1020190044654A KR102181727B1 (ko) | 2019-04-17 | 2019-04-17 | 탄화규소-질화규소 복합소재의 제조방법 및 이에 따른 탄화규소-질화규소 복합소재 |
KR10-2019-0044654 | 2019-04-17 | ||
PCT/KR2020/003339 WO2020213835A1 (ko) | 2019-04-17 | 2020-03-11 | 탄화규소-질화규소 복합소재의 제조방법 및 이에 따른 탄화규소-질화규소 복합소재 |
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CN (1) | CN113748489A (ja) |
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JPS5617988A (en) * | 1979-07-24 | 1981-02-20 | Toshio Hirai | Electroconductive si3n44c type noncrystalline material by chemical gas phase deposition and its manufacture |
JPH02129365A (ja) | 1988-11-07 | 1990-05-17 | Sumitomo Electric Ind Ltd | 被覆構造材料 |
JPH07103460B2 (ja) | 1990-05-09 | 1995-11-08 | 信越化学工業株式会社 | SiCとSi▲下3▼N▲下4▼よりなる複合膜の製造方法およびX線リソグラフィー用マスクの製造方法 |
JPH07252662A (ja) * | 1994-03-16 | 1995-10-03 | Hitachi Ltd | 高純度複合材およびその製法 |
JP2003176178A (ja) | 2001-12-07 | 2003-06-24 | Nhk Spring Co Ltd | ウエハ支持体およびその周辺部品 |
US20040043888A1 (en) * | 2002-08-28 | 2004-03-04 | Noritake Co., Limited | Compositions and methods for making microporous ceramic materials |
US7446066B1 (en) * | 2005-11-07 | 2008-11-04 | Jai-Lin Sun | Reverse reaction sintering of Si3N4/SiC composites |
TWI410516B (zh) | 2008-09-11 | 2013-10-01 | Lu Sheng Hong | Graphite protective film and manufacturing method thereof |
JP5748564B2 (ja) | 2011-05-27 | 2015-07-15 | 東洋炭素株式会社 | 炭化ケイ素−炭素複合材の製造方法 |
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JP2022520899A (ja) | 2022-04-01 |
KR20200121989A (ko) | 2020-10-27 |
TWI744867B (zh) | 2021-11-01 |
WO2020213835A1 (ko) | 2020-10-22 |
CN113748489A (zh) | 2021-12-03 |
KR102181727B1 (ko) | 2020-11-24 |
US20220144710A1 (en) | 2022-05-12 |
US11697620B2 (en) | 2023-07-11 |
SG11202110924UA (en) | 2021-10-28 |
TW202102713A (zh) | 2021-01-16 |
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