JP7306818B2 - Fine sword blade manufacturing method - Google Patents

Description

TECHNICAL FIELD The present invention relates to a method for manufacturing a fine shank.

A dicing device that cuts a work piece using a cutting blade is set under various processing conditions according to the work piece and the shape desired to be obtained by cutting.

For example, on the surface of a silicon substrate, a plurality of square pillars (quadrangular pyramids) each having a length (height) of 300 μm and a bottom size of 30 μm×30 μm and having sharp tips are formed at intervals of 30 μm (pitch). It may be required to form a fine tipped crest. Processing conditions for forming such a shape with a dicing machine using a cutting blade have not been known in the past.

As a technique similar to this, there is known a technique for forming an ultrasonic probe using a piezoelectric element, which is widely used in medical equipment such as ultrasonic diagnostic equipment. Methods for improving the sensitivity of the ultrasonic probe include reducing the size and changing the shape of the piezoelectric vibrator. Specifically, it has been proposed to cut an ultrasonic probe in which square prismatic piezoelectric transducers are arranged in an array, which requires slicing in the vertical and horizontal directions on the surface. (See Patent Document 1.).

JP 2009-27052 A

According to the technique described in Patent Document 1, although it is possible to form a fine square prism on the surface of the workpiece, it is not possible to form a shape with a sharp tip, and the above-mentioned fine sword crests cannot be formed. It is not possible to satisfy the processing conditions for forming

The present invention has been made in view of the above-mentioned facts, and its main technical problem is to provide a fine pincushion capable of forming fine pincushion by forming a plurality of pillars with sharp tips on the surface of a workpiece. It is to provide a manufacturing method.

In order to solve the main technical problems described above, according to the present invention, there is provided a method for manufacturing a fine shank having a plurality of pillars with pointed ends, which comprises preparing a silicon substrate for manufacturing the shank to be processed. A material preparation step, a cutting blade preparation step of preparing a disc-shaped cutting blade equipped with a cutting edge on the outer periphery for cutting a silicon substrate , and an aspect ratio of the amount of cutting edge to the thickness of the cutting blade of 30: 1 or more. A step of setting the aspect ratio to increase the surface side of the silicon substrate , a step of attaching the cutting blade to the rotating shaft, rotating the cutting blade, and finely vibrating the tip of the cutting blade in the direction of the rotating shaft. A first cutting step of forming a plurality of cutting grooves at a predetermined pitch in a first direction while cutting from the first direction, and forming a plurality of walls having a sharp tip on the surface side by adjacent cutting grooves; The plurality of walls are cut from the surface side at a predetermined pitch in a second direction perpendicular to the first direction by rotating the tip of the cutting edge in the direction of the rotation axis to produce a plurality of pointed tips. and a second cutting step for forming a pillar to form a fine pincushion.

The first cutting step is preferably performed multiple times while changing the depth of the cut groove.

The method for manufacturing a fine pincushion according to the present invention comprises a work piece preparation step of preparing a silicon substrate for manufacturing a pincushion, and a cutting blade preparation step of preparing a disk-shaped cutting blade having a cutting edge on the outer circumference for cutting the silicon substrate . an aspect ratio setting step of increasing the aspect ratio of the amount of cutting edge extension to the thickness of the cutting blade to be greater than 30:1; a cutting blade mounting step of mounting the cutting blade on a rotating shaft; and rotating the cutting blade. Then, the tip of the cutting edge is slightly vibrated in the direction of the rotation axis to cut from the surface side of the silicon substrate , and a plurality of cutting grooves are formed in the first direction at a predetermined pitch, and the adjacent cutting grooves cut the surface side. A first cutting step of forming a plurality of walls with sharp tips, and rotating the cutting blade to micro-vibrate the tip of the cutting edge in the direction of the rotation axis in a second direction orthogonal to the first direction and a second cutting step in which the plurality of walls are cut from the surface side at a predetermined pitch to form a plurality of pillars with pointed tips to form a ridge. By intentionally micro-vibrating the tip of the cutting edge of the blade in the direction of the rotation axis, it is possible to manufacture a kenzan with a fine column with a sharp tip.

It is a perspective view which shows an example of the cutting means which implements the cutting of this embodiment. (a) A perspective view showing a cutting blade and its mounting structure in the cutting means shown in FIG. 1, (b) A conceptual diagram for explaining the relationship between the thickness of the cutting blade, the amount of cutting edge extension, and the amplitude of vibration. . It is a perspective view for demonstrating a to-be-processed object preparation process. FIG. 4 is a perspective view showing an embodiment of a first cutting step; (a) A side view showing a mode in which the first cutting process is performed in the first cutting step, (b) AA cross section of (a), and (c) BB cross section of (a). (a) A side view showing a second cutting process in the first cutting step, (b) a CC cross section of (a), and (c) a DD cross section of (a). (a) A side view showing a mode in which the third cutting process in the first cutting step is performed, (b) an EE cross section of (a), and (c) an FF cross section of (a). It is a perspective view which shows the silicon substrate which the 1st cutting process was performed, and the partially enlarged view of the surface. FIG. 11 is a perspective view showing an embodiment of a second cutting step; It is a perspective view which shows the silicon substrate which the 2nd cutting process was performed, and a partial enlarged view of the surface.

DETAILED DESCRIPTION OF THE INVENTION An embodiment of a method for manufacturing a fine pin point according to the present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 shows a perspective view of a cutting means 4 that is installed in a dicing device 2 (only a part of which is shown) used in this embodiment and performs cutting on a workpiece. there is

The cutting means 4 is mounted on a base (not shown) and is rotatably mounted on a spindle housing 41 which is movable and adjusted in the indexing direction indicated by the arrow Y and the cutting direction indicated by the arrow Z. a rotating shaft 42 supported; a cutting blade 43 attached to the tip of the rotating shaft 42; a blade cover 60 covering the cutting blade 43; and cutting water supply means 62 for supplying water. A motor (not shown) is connected to the rear end of the spindle housing 41 so that the rotary shaft 42 can be rotated at an arbitrary speed.

The cutting blade 43 and its mounting structure will be described with reference to FIG. 2(a). When carrying out the method of manufacturing the fine pinpoint of the present embodiment, first, a disk-shaped cutting blade 43 having a cutting edge on its outer periphery is prepared according to the material and dimensions of the fine pinpoint to be manufactured (cutting blade preparation process). The workpiece in this embodiment is a substrate made of silicon (Si), and the cutting blade 43 is suitable for forming a plurality of pillars with a length (height) of 300 μm and sharp tips. something is selected. The cutting blade 43 used for this workpiece is a grinding stone blade formed by bonding abrasive grains made of diamond or the like with a binder to form an annular shape. In addition, the thickness T of the cutting blade 43 including the cutting edge disposed on the outer periphery is a thickness corresponding to the interval (pitch) of a plurality of pillars (regular quadrangular pyramids) with pointed tips that constitute the fine ridge to be manufactured. set. For the cutting blade 43 of the present embodiment, for example, a diameter of 51.9 mm and a cutting edge thickness T of 30 μm are selected. The diameter of the fitting hole 431 of the cutting blade 43 formed in an annular shape is formed to have a dimension to fit into the mounting portion 52 of the first flange member 5 described later.

Depending on the material of the workpiece, the cutting blade 43 may be a resinoid blade made by kneading abrasive grains into a resin bond material, molding it into a ring shape, and firing it, or kneading abrasive grains into a metal bond material and molding it into a ring shape. It is possible to select a metal blade that is fired by heating, an electroformed blade that is formed by bonding abrasive grains to the side surface of a base made of aluminum or the like by metal plating such as nickel.

The cutting blade 43 configured as described above is disposed facing the first flange member 5 mounted on the rotating shaft 42 as shown in FIG. It is clamped and fixed by the second flange member 6 . The first flange member 5 is composed of an annular flange portion 53 and a cylindrical mounting portion 52 protruding from the center portion of the flange portion 53, as shown in FIG. 2(a). The mounting portion 52 is formed with a fitting hole 51 penetrating in the axial direction, and a male screw is formed on the outer peripheral surface of the tip portion. A tapered surface corresponding to the tapered surface 421 formed at the tip of the rotating shaft 42 is formed on the inner peripheral surface of the fitting hole 51 . The second flange member 6 is formed in an annular shape having a fitting hole 61 . In addition, the diameter of the fitting hole 61 is formed so as to fit into the mounting portion 52 of the first flange member 5 .

In order to fix the cutting blade 43 by the first flange member 5 and the second flange member 6 described above, the fitting hole 51 formed in the mounting portion 52 of the first flange member 5 is inserted into the tip of the rotating shaft 42 . It fits into the tapered surface 421 formed on the part. Then, the first flange member 5 is attached to the rotary shaft 42 by screwing the first tightening nut 71 onto the male thread formed at the tip of the rotary shaft 42 . Next, the fitting hole 431 of the cutting blade 43 is fitted into the mounting portion 52 of the first flange member 5 . Then, the fitting hole 61 of the second flange member 6 is fitted into the mounting portion 52 of the first flange member 5 . When the first flange member 5, the cutting blade 43 and the second flange member 6 are fitted to the mounting portion 52 of the first flange member 5 in this way, the mounting portion 52 of the first flange member 5 By screwing the second tightening nut 72 onto the male thread formed in the second clamping nut 72, the cutting blade 43 is clamped and fixed between the first flange member 5 and the second flange member 6 (cutting blade attachment process).

When the cutting blade 43 is sandwiched between the first flange member 5 and the second flange member 6, as shown in FIG. , a cutting edge protruding amount H is set such that the tip of the cutting edge is exposed in the radial direction by a predetermined amount. This cutting edge extension amount H is a minute value indicated by a chain double-dashed line 43' at the tip of the cutting edge of the cutting blade 43 when the cutting blade 43 is rotated at a predetermined rotational speed for machining a workpiece. It is set to intentionally generate vibration with a desired vibration width W, thereby setting the aspect ratio (H:T) of the cutting edge amount H to the thickness T of the cutting blade 43, which will be described later in detail. (aspect ratio setting step). This cutting edge extension amount H is embodied by adjusting the diameters of the first flange member 5 and the second flange member 6 that clamp the cutting blade 43 (set to the same diameter). In this embodiment, the diameter of the first flange member 5 and the second flange member 6 is set to 49.4 mm, while the diameter of the cutting blade 43 is 51.9 mm, in order to set the cutting edge length H to 1,250 μm. (H=(51.9 mm−49.4 mm)/2=1.25 mm=1,250 μm).

The aspect ratio setting process of the present embodiment described above will be described more specifically.

In general, the smaller the cutting edge extension H with respect to the thickness T of the cutting blade 43, the smaller the vibration width W of the tip of the cutting edge of the cutting blade 43 during cutting. Therefore, it is preferable for precise cutting that the aspect ratio (H:T) of the cutting edge length H to the thickness T of the cutting blade 43 is small. Therefore, for example, when cutting is performed to precisely form a fine square prism as described in Patent Document 1, the cutting edge amount H is usually as small as possible and the aspect ratio (H:T) is 30: Set to be less than 1. However, since the cutting in this embodiment forms a plurality of pillars with sharp tips on the surface of the workpiece, the amount of cutting edge H is adjusted to the normal aspect ratio (H:T ) or more. As a result, as shown in FIG. 2B, when the cutting blade 43 is rotated at a predetermined rotational speed (for example, 30,000 rpm) during cutting, and the tip of the cutting blade is slightly vibrated in the direction of the rotation axis, By intentionally increasing the amplitude W of , it is possible to form a plurality of pillars with sharp tips on the surface of the workpiece. Although details will be described later, the aspect ratio (H:T) realized in the present invention is 30:1 or more, more preferably 40:1 or more. H:T=1,250 μm:30 μm=41.6:1 so that the vibration width W is 60 μm when rotated at a rotational speed of 30,000 rpm.

Apart from performing the above-described cutting blade preparation process, aspect ratio setting process, and cutting blade mounting process, a workpiece preparation process is performed for preparing a workpiece on which a fine blade tip is to be manufactured by cutting. The workpiece preparation step will be described below with reference to FIG.

The workpiece in this embodiment is a plate-shaped silicon substrate 10 of 40 mm×40 mm×15 mm shown in FIG. Once the silicon substrate 10 is prepared, it can be cut by placing it on a holding table 20 which is provided in the dicing apparatus 2 and is configured to be movable in the X-axis direction and rotatable by moving means (not shown). state. More specifically, the silicon substrate 10 is adhered and fixed to the center of the circular substrate 30 , and the substrate 30 is placed on the suction chuck 22 forming the upper surface of the holding table 20 . The suction chuck 22 is made of porous ceramic having air permeability, and by operating suction means (not shown) connected to the holding table 20, the substrate 30 placed on the upper surface of the holding table 20 is moved to the silicon substrate. Suction and hold together with 10. Regardless of the timing of performing the above-described cutting blade preparation step, aspect ratio setting step, and cutting blade mounting step, this work piece preparation step is performed before actually cutting the work piece. Just do it.

After the cutting blade preparing step, the aspect ratio setting step, the cutting blade mounting step, and the workpiece preparing step described above, the silicon substrate 10 is cut using the cutting blade 43 as shown in FIGS. Carry out processing. The cutting is performed by a first cutting process and a second cutting process, as described below.

As shown in FIG. 4, the holding table 20 of the dicing apparatus 2 is moved to position the silicon substrate 10 directly below the alignment means (not shown) while the holding table 20 is holding the silicon substrate 10 by suction. The alignment means is provided with illumination means and imaging means (not shown), and is configured to be capable of imaging and detecting the silicon substrate 10 from the front surface 10a side. After positioning the silicon substrate 10 directly under the alignment means, each side of the silicon substrate 10 is detected by the alignment means, and the direction and position of the silicon substrate 10 are determined by positioning the side along the X-axis direction in the X-axis direction. Then, alignment between the silicon substrate 10 and the cutting blade 43 of the cutting means 4 is performed.

After the alignment, the silicon substrate 10 is moved to position the processing start position (the position indicated by P in the drawing) of the silicon substrate 10 directly below the cutting blade 43 of the cutting means 4 . After the cutting blade 43 is positioned on the processing start position P of the silicon substrate 10, the cutting blade 43 is rotated in the direction indicated by the arrow R in the drawing to start its operation. The rotation speed at this time is, for example, 30,000 rpm. After the cutting blade 43 starts rotating, the cutting blade 43 is lowered. At this time, in the present embodiment, since the cutting is performed in a plurality of times (for example, three times), in the first cutting, the cutting depth is 100 μm from the surface 10a of the silicon substrate 10. Blade 43 is lowered.

After the cutting blade 43 is lowered, the holding table 20 holding the silicon substrate 10 is moved in the X-axis direction indicated by the arrow X1 in the figure, that is, in the forward direction with respect to the rotation direction R of the cutting blade 43, for example, at 2 mm/sec. Cutting feed is performed at a speed of , and cutting is performed while supplying cutting water. The state of cutting at this time will be described with reference to FIG.

FIG. 5(a) is a side view of the cutting blade 43 viewed from the rotation axis direction, and the first cutting depth is set to 100 μm as described above. 5(b) shows the AA section of the tip of the cutting blade 43 in the cutting direction at this time, and FIG. 5(c) shows the BB section of the deepest position. As shown in FIG. 5B, the tip of the cutting edge of the cutting blade 43 in the vicinity of the surface 10a of the silicon substrate 10 micro-vibrates with a vibration width of 60 μm, as indicated by the chain double-dashed line 43′ in the figure. there is As a result, an opening 90' having a width of 60 .mu.m corresponding to this vibration width is formed in the vicinity of the surface 10a. Further, as can be understood from FIG. 5(c), since the vibration width of the cutting blade 43 is gradually suppressed toward the deepest position from the surface 10a, a cutting groove 90 having an inclined wall surface is formed. . The direction in which the cut grooves 90 are formed in the silicon substrate 10 in this manner is referred to as the "first direction".

After the cutting groove 90 is formed in the silicon substrate 10 from the processing start position P to the end position in the first direction, the cutting means 4 is raised in the Z-axis direction, and the holding table 20 is moved back. The edge of the silicon substrate 10 on the side of the processing start position P is positioned directly below the cutting blade 43 . Then, in the direction indicated by the arrow Y, the cutting means 4 is index-fed by a predetermined index-feed amount (60 μm), and on the surface 10a of the silicon substrate 10, at a position adjacent in the Y-axis direction, the same cutting as described above is performed. A cutting groove 90 is formed. By repeating such processing, cut grooves 90 having a depth of 100 μm are formed in the first direction over the entire surface 10 a of the silicon substrate 10 .

After forming the cutting groove 90 with a cutting depth of 100 μm in the first direction over the entire surface 10a of the silicon substrate 10, the cutting means 4 and the holding table 20 are moved to directly under the cutting blade 43 again. A processing start position P on the surface 10a of the silicon substrate 10 is positioned. After positioning the cutting blade 43 on the processing start position P of the silicon substrate 10, as shown in FIG. Carry out cutting. The amount of descent at this time is set so that the cutting depth is 200 μm from the surface 10a in the second cutting.

After the cutting blade 43 is lowered, the holding table 20 holding the silicon substrate 10 is cut and fed in the direction indicated by the arrow X1 in FIG. FIG. 6(b) shows the CC cross section of the tip of the cutting area of the cutting blade 43 at this time, and FIG. 6(c) shows the DD cross section of the deepest position. As shown in FIG. 6B, in the second cutting process, the vibration width of the tip portion of the cutting region of the cutting blade 43 is slightly suppressed from 60 μm, and the previously formed cutting groove 90 A cut groove 92' is formed while cutting the wall surface of . Further, as can be understood from FIG. 6(c), since the vibration of the cutting blade 43 is suppressed from the tip toward the deepest position in the cutting direction of the cutting blade 43, the cutting blade 43 is further inclined with respect to the cutting groove 90. A cut groove 92 having a cutting depth of 200 μm is formed. After the cutting groove 92 is formed from the machining start position P in this way, the cutting means 4 is raised in the Z-axis direction, and the holding table 20 is moved back to directly under the cutting blade 43 to cut the silicon substrate 10 . Position the edge on the side where the start position P is arranged. Then, the cutting means 4 is index-fed by a predetermined index feed amount (60 μm) in the direction indicated by the arrow Y to form the same cutting grooves 92 as described above along the adjacent cutting grooves 90 . By repeating such processing, cut grooves 92 having a cutting depth of 200 μm are formed in the first direction over the entire surface 10a of the silicon substrate 10 .

After the second cutting process described above is performed and the cutting grooves 92 with a cutting depth of 200 μm are formed on the entire surface 10a of the silicon substrate 10, the cutting means 4 and the holding table 20 are moved to The processing start position P on the front surface 10a of the silicon substrate 10 is positioned directly below the cutting blade 43 again. After the cutting blade 43 is positioned on the processing start position P of the silicon substrate 10, as shown in FIG. 7A, the cutting blade 43 is lowered to perform the third cutting along the cutting groove 92. do. At this time, the amount of descent is set so that the cutting depth is 300 μm from the surface 10a in the third cutting.

After the cutting blade 43 is lowered, the holding table 20 holding the silicon substrate 10 is cut and fed in the direction indicated by the arrow X1 in FIG. FIG. 7(b) shows the EE section of the tip of the cutting area of the cutting blade 43 at this time, and FIG. 7(c) shows the FF section of the deepest position. As shown in FIG. 7(b), in the third cutting, the vibration width of the tip portion of the cutting blade 43 in the cutting direction becomes a vibration width considerably suppressed from 60 μm, and the cutting groove 92 formed earlier becomes The surface of the wall surface of is further cut by a very small amount to form cut grooves 94'. In addition, as can be seen from FIG. 7(c), since microvibration of the cutting blade 43 is almost completely suppressed from the tip toward the deepest position in the cutting region of the cutting blade 43, the cutting groove 92 On the other hand, a cut groove 94 having a cutting depth of 300 μm and having a further inclined wall surface is formed. After the cutting groove 94 is formed from the machining start position P, the cutting means 4 is raised in the Z-axis direction, and the holding table 20 is moved backward to form the machining start position P of the silicon substrate 10 directly below the cutting blade 43. position the edge on the side on which is arranged. Then, in the Y-axis direction, the cutting means 4 is index-fed by a predetermined index-fed amount (60 μm) to form the same cut groove 94 as described above. By repeating such processing, cut grooves 94 having a cutting depth of 300 μm are formed in the first direction over the entire surface 10a of the silicon substrate 10 . With the above, the first cutting process is completed.

FIG. 8 shows a silicon substrate 10 in which a cut groove 94 is formed along the first direction over the entire surface 10a by the above-described first cutting step, and an enlarged view of a part of the surface 10a of the silicon substrate 10. Figure shows. As described above, in the first cutting step, the cutting blade extension amount H ( 1,250 μm) aspect ratio (41.6:1) was set. Furthermore, the first cutting process is performed with the index feed amount when the cutting means 4 is index-fed in the Y-axis direction set to 60 μm, and the set value of the depth of cut to be divided into three steps and performed stepwise to 300 μm. carried out. As a result, as shown on the left side of FIG. wall 100 is formed.

After forming the plurality of walls 100 with pointed ends on the surface 10a of the silicon substrate 10 as described above, the holding table 20 is rotated by 90 degrees to form the cutting grooves 94, as shown in FIG. The first direction is positioned along the Y-axis direction, that is, the direction perpendicular to the first direction (second direction) is positioned along the X-axis direction. After positioning the second direction in the X-axis direction in this way, the holding table 20 and the cutting means 4 are moved so that the machining start position P' in the second cutting step is directly below the cutting blade 43. positioned in Once the machining start position P′ is positioned directly below the cutting blade 43, the cutting blade 43 is moved stepwise to reach a depth of cut of 300 μm in three steps in the same manner as in the first cutting step. Lower and cut. Then, the holding table 20 is moved in the direction indicated by X<b>1 to cut the plurality of walls 100 to form cut grooves 110 . The cut grooves 110 are formed in a second direction orthogonal to the cut grooves 94 formed in the first cutting step, and such cut grooves 110 are formed over the entire surface 10a of the silicon substrate 10. By doing so, as shown in FIG. 10, a plurality of pillars 120 with pointed ends are formed. With the above, the second cutting process is completed.

As described above, by performing the first cutting step and the second cutting step, on the surface 10a of the silicon substrate 10, a needle-like fine point ridge consisting of a regular quadrangular pyramid measuring 30 μm×30 μm×300 μm is formed. pillars are formed.

According to the above-described embodiment, by slightly vibrating the tip of the cutting edge of the cutting blade 43 in the direction of the rotation axis, it is possible to manufacture a pinion crest having a fine column with a sharp tip.

According to the present invention, various modifications are provided without being limited to the above-described embodiments. For example, in the embodiment described above, the final cutting depth was set to 300 μm, and the cutting was performed while changing the depth of the cutting groove by 100 μm in three steps during cutting. However, the present invention is not limited to this, and the cutting depth may be changed in stages to change the depth of the cutting groove, and the cutting may be performed in multiple times other than three times. The depth of cut may be gradually increased in 5 steps of 60 μm each, or the depth of cut may be increased in 2 steps of 150 μm each to form the cutting groove stepwise.

Further, in the above-described embodiment, the aspect ratio of the cutting blade extension amount H to the thickness T of the cutting blade 43 is equal to 60 μm between the index feed amount and the vibration width W when micro-vibrating the tip of the cutting blade 43. A plurality of pointed needle-like columns were formed with the surface 10a of the silicon substrate 10 as the tip. However, the present invention is not limited to this. It may be set larger than 100% of the feed amount. By doing so, it is also possible to form a plurality of needle-like columns with sharp tips. However, if the vibration width W is too large with respect to the index feed amount, the amount lost on the surface 10a side of the silicon substrate 10 increases, and the height of the plurality of pillars formed also becomes low. It is preferable to set the aspect ratio so as to be 100% to 110% of the feeding amount. By setting in this way, it is possible to satisfactorily form a plurality of pillars with pointed ends that form fine pincushion crests.

In the above-described embodiment, the first cutting step, which is performed along the first direction on the surface 10a of the silicon substrate 10, is performed in three steps while changing the depth of cut. After forming the wall and completing the cutting process three times along the first direction, the silicon substrate 10 is rotated by 90 degrees and cut three times along the second direction while changing the depth of cut. A second cutting step was performed to cut the plurality of walls. However, the present invention is not limited to this, and a first cutting step along a first direction with a first cutting depth (100 μm) and a second cutting step along a second direction are performed on the silicon substrate 10 . By continuously performing the cutting step, a plurality of pillars with sharp tips are formed at the first cutting depth, and then the first cutting step is performed again at the second cutting depth (200 μm), and A second cutting step is performed, and then a first cutting step and a second cutting step are performed at a third depth of cut (300 μm) to form a plurality of desired pointed pillars. You may do so. According to this modification, since a plurality of pillars with sharp tips are formed in stages, the pillars can be formed more reliably.

2: Dicing device 4: Cutting means 41: Spindle housing 42: Rotating shaft 43: Cutting blade 5: First flange member 6: Second flange member 10: Silicon substrate 10a: Surface 20: Holding table 22: Suction chuck 30: Substrate 90, 92, 94, 110: Cutting groove 100: Wall 120: Column T: Thickness of cutting blade H: Cutting edge amount W: Vibration width of cutting blade

Claims (2)

A fine sword mount manufacturing method for manufacturing a fine sword mount having a plurality of pillars with pointed ends,
A workpiece preparation step for preparing a silicon substrate for manufacturing a sword mount;
A cutting blade preparation step of preparing a disc-shaped cutting blade having a cutting edge on the outer periphery for cutting a silicon substrate ;
an aspect ratio setting step of increasing the aspect ratio of the amount of cutting blade extension to the thickness of the cutting blade to be greater than 30:1;
A cutting blade mounting step of mounting the cutting blade on a rotating shaft;
The cutting blade is rotated, and the tip of the cutting edge is slightly vibrated in the direction of the rotation axis to cut from the surface side of the silicon substrate , and a plurality of cutting grooves are formed in a first direction at a predetermined pitch to form adjacent cutting grooves. a first cutting step of forming a plurality of walls having sharp tips on the surface side by
The cutting blade is rotated, and the tip of the cutting edge is slightly vibrated in the direction of the rotation axis to cut the plurality of walls from the surface side at a predetermined pitch in a second direction orthogonal to the first direction, so that the tip is a second cutting step of forming a plurality of pointed pillars to form a tsurugi mountain;
A method for manufacturing a fine kenzan, comprising at least: 2. The method for manufacturing a fine point blade according to claim 1, wherein the first cutting step is performed a plurality of times while changing the depth of the cutting groove.

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