JP7303155B2 - パターン測定方法 - Google Patents

パターン測定方法 Download PDF

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Publication number
JP7303155B2
JP7303155B2 JP2020088016A JP2020088016A JP7303155B2 JP 7303155 B2 JP7303155 B2 JP 7303155B2 JP 2020088016 A JP2020088016 A JP 2020088016A JP 2020088016 A JP2020088016 A JP 2020088016A JP 7303155 B2 JP7303155 B2 JP 7303155B2
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Japan
Prior art keywords
pattern
cad
edge
measurement
patterns
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JP2020088016A
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Japanese (ja)
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JP2021182601A5 (https=
JP2021182601A (ja
Inventor
伸一 中澤
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東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社
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Priority to JP2020088016A priority Critical patent/JP7303155B2/ja
Application filed by 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 filed Critical 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社
Priority to US17/925,810 priority patent/US20230186459A1/en
Priority to CN202180035695.5A priority patent/CN115699278A/zh
Priority to KR1020227043907A priority patent/KR20230012016A/ko
Priority to PCT/JP2021/017356 priority patent/WO2021235227A1/ja
Priority to TW110117504A priority patent/TW202201590A/zh
Publication of JP2021182601A publication Critical patent/JP2021182601A/ja
Publication of JP2021182601A5 publication Critical patent/JP2021182601A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • G06T7/337—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/421—Imaging digitised image, analysed in real time (recognition algorithms)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30164—Workpiece; Machine component

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2020088016A 2020-05-20 2020-05-20 パターン測定方法 Active JP7303155B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2020088016A JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法
CN202180035695.5A CN115699278A (zh) 2020-05-20 2021-05-06 图案测量方法
KR1020227043907A KR20230012016A (ko) 2020-05-20 2021-05-06 패턴 측정 방법
PCT/JP2021/017356 WO2021235227A1 (ja) 2020-05-20 2021-05-06 パターン測定方法
US17/925,810 US20230186459A1 (en) 2020-05-20 2021-05-06 Pattern measuring method
TW110117504A TW202201590A (zh) 2020-05-20 2021-05-14 圖案測量方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020088016A JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法

Publications (3)

Publication Number Publication Date
JP2021182601A JP2021182601A (ja) 2021-11-25
JP2021182601A5 JP2021182601A5 (https=) 2022-07-29
JP7303155B2 true JP7303155B2 (ja) 2023-07-04

Family

ID=78606786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020088016A Active JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法

Country Status (6)

Country Link
US (1) US20230186459A1 (https=)
JP (1) JP7303155B2 (https=)
KR (1) KR20230012016A (https=)
CN (1) CN115699278A (https=)
TW (1) TW202201590A (https=)
WO (1) WO2021235227A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7574157B2 (ja) * 2021-08-27 2024-10-28 株式会社ニューフレアテクノロジー 検査装置及び参照画像生成方法
JP2025144774A (ja) * 2024-03-21 2025-10-03 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 パターン測定方法およびパターン測定装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149055A (ja) 2005-05-19 2007-06-14 Nano Geometry Kenkyusho:Kk パターン検査装置および方法
JP2008235575A (ja) 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP2009243993A (ja) 2008-03-31 2009-10-22 Hitachi High-Technologies Corp 走査型電子顕微鏡を用いた回路パターンの寸法計測装置およびその方法
JP2014025700A (ja) 2012-07-24 2014-02-06 Hitachi High-Technologies Corp パターン計測装置及び方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4887062B2 (ja) * 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
JP2011137901A (ja) * 2009-12-28 2011-07-14 Hitachi High-Technologies Corp パターン計測条件設定装置
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法
JP5438741B2 (ja) 2011-10-26 2014-03-12 株式会社アドバンテスト パターン測定装置及びパターン測定方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007149055A (ja) 2005-05-19 2007-06-14 Nano Geometry Kenkyusho:Kk パターン検査装置および方法
JP2008235575A (ja) 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP2009243993A (ja) 2008-03-31 2009-10-22 Hitachi High-Technologies Corp 走査型電子顕微鏡を用いた回路パターンの寸法計測装置およびその方法
JP2014025700A (ja) 2012-07-24 2014-02-06 Hitachi High-Technologies Corp パターン計測装置及び方法

Also Published As

Publication number Publication date
WO2021235227A1 (ja) 2021-11-25
TW202201590A (zh) 2022-01-01
CN115699278A (zh) 2023-02-03
US20230186459A1 (en) 2023-06-15
KR20230012016A (ko) 2023-01-25
JP2021182601A (ja) 2021-11-25

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