KR20230012016A - 패턴 측정 방법 - Google Patents

패턴 측정 방법 Download PDF

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Publication number
KR20230012016A
KR20230012016A KR1020227043907A KR20227043907A KR20230012016A KR 20230012016 A KR20230012016 A KR 20230012016A KR 1020227043907 A KR1020227043907 A KR 1020227043907A KR 20227043907 A KR20227043907 A KR 20227043907A KR 20230012016 A KR20230012016 A KR 20230012016A
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KR
South Korea
Prior art keywords
pattern
cad
edge
measurement
actual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020227043907A
Other languages
English (en)
Korean (ko)
Inventor
신이치 나카자와
Original Assignee
타스밋 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 타스밋 가부시키가이샤 filed Critical 타스밋 가부시키가이샤
Publication of KR20230012016A publication Critical patent/KR20230012016A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • H01L22/12—
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • G06T7/337—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H01L22/20—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/421—Imaging digitised image, analysed in real time (recognition algorithms)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30164—Workpiece; Machine component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
KR1020227043907A 2020-05-20 2021-05-06 패턴 측정 방법 Ceased KR20230012016A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020088016A JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法
JPJP-P-2020-088016 2020-05-20
PCT/JP2021/017356 WO2021235227A1 (ja) 2020-05-20 2021-05-06 パターン測定方法

Publications (1)

Publication Number Publication Date
KR20230012016A true KR20230012016A (ko) 2023-01-25

Family

ID=78606786

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020227043907A Ceased KR20230012016A (ko) 2020-05-20 2021-05-06 패턴 측정 방법

Country Status (6)

Country Link
US (1) US20230186459A1 (https=)
JP (1) JP7303155B2 (https=)
KR (1) KR20230012016A (https=)
CN (1) CN115699278A (https=)
TW (1) TW202201590A (https=)
WO (1) WO2021235227A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7574157B2 (ja) * 2021-08-27 2024-10-28 株式会社ニューフレアテクノロジー 検査装置及び参照画像生成方法
JP2025144774A (ja) * 2024-03-21 2025-10-03 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 パターン測定方法およびパターン測定装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235575A (ja) 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP2013092440A (ja) 2011-10-26 2013-05-16 Advantest Corp パターン測定装置及びパターン測定方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4787673B2 (ja) * 2005-05-19 2011-10-05 株式会社Ｎｇｒ パターン検査装置および方法
JP4887062B2 (ja) * 2006-03-14 2012-02-29 株式会社日立ハイテクノロジーズ 試料寸法測定方法、及び試料寸法測定装置
JP5530601B2 (ja) * 2008-03-31 2014-06-25 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡を用いた回路パターンの寸法計測装置およびその方法
JP2011137901A (ja) * 2009-12-28 2011-07-14 Hitachi High-Technologies Corp パターン計測条件設定装置
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法
JP6001945B2 (ja) * 2012-07-24 2016-10-05 株式会社日立ハイテクノロジーズ パターン計測装置及び方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008235575A (ja) 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP2013092440A (ja) 2011-10-26 2013-05-16 Advantest Corp パターン測定装置及びパターン測定方法

Also Published As

Publication number Publication date
WO2021235227A1 (ja) 2021-11-25
TW202201590A (zh) 2022-01-01
JP7303155B2 (ja) 2023-07-04
CN115699278A (zh) 2023-02-03
US20230186459A1 (en) 2023-06-15
JP2021182601A (ja) 2021-11-25

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