CN115699278A - 图案测量方法 - Google Patents

图案测量方法 Download PDF

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Publication number
CN115699278A
CN115699278A CN202180035695.5A CN202180035695A CN115699278A CN 115699278 A CN115699278 A CN 115699278A CN 202180035695 A CN202180035695 A CN 202180035695A CN 115699278 A CN115699278 A CN 115699278A
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CN
China
Prior art keywords
pattern
cad
measurement
edge
actual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180035695.5A
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English (en)
Chinese (zh)
Inventor
中泽伸一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tasmit Inc
Original Assignee
Tasmit Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tasmit Inc filed Critical Tasmit Inc
Publication of CN115699278A publication Critical patent/CN115699278A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/0002—Inspection of images, e.g. flaw detection
    • G06T7/0004—Industrial image inspection
    • G06T7/001—Industrial image inspection using an image reference approach
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/10—Segmentation; Edge detection
    • G06T7/13—Edge detection
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/30—Determination of transform parameters for the alignment of images, i.e. image registration
    • G06T7/33—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods
    • G06T7/337—Determination of transform parameters for the alignment of images, i.e. image registration using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/62—Analysis of geometric attributes of area, perimeter, diameter or volume
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/40—Imaging
    • G01N2223/421—Imaging digitised image, analysed in real time (recognition algorithms)
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/60—Specific applications or type of materials
    • G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
    • G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30164—Workpiece; Machine component

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Geometry (AREA)
  • Quality & Reliability (AREA)
  • Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CN202180035695.5A 2020-05-20 2021-05-06 图案测量方法 Pending CN115699278A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020088016A JP7303155B2 (ja) 2020-05-20 2020-05-20 パターン測定方法
JP2020-088016 2020-05-20
PCT/JP2021/017356 WO2021235227A1 (ja) 2020-05-20 2021-05-06 パターン測定方法

Publications (1)

Publication Number Publication Date
CN115699278A true CN115699278A (zh) 2023-02-03

Family

ID=78606786

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180035695.5A Pending CN115699278A (zh) 2020-05-20 2021-05-06 图案测量方法

Country Status (6)

Country Link
US (1) US20230186459A1 (https=)
JP (1) JP7303155B2 (https=)
KR (1) KR20230012016A (https=)
CN (1) CN115699278A (https=)
TW (1) TW202201590A (https=)
WO (1) WO2021235227A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7574157B2 (ja) * 2021-08-27 2024-10-28 株式会社ニューフレアテクノロジー 検査装置及び参照画像生成方法
JP2025144774A (ja) * 2024-03-21 2025-10-03 東レエンジニアリング先端半導体Ｍｉテクノロジー株式会社 パターン測定方法およびパターン測定装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038670A (zh) * 2006-03-14 2007-09-19 株式会社日立高新技术 试样尺寸测定方法及试样尺寸测定装置
US20110127429A1 (en) * 2008-03-31 2011-06-02 Atsushi Miyamoto Method and Apparatus For Measuring Dimension Of Circuit Pattern Formed On Substrate By Using Scanning Electron Microscope
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法
US20120290990A1 (en) * 2009-12-25 2012-11-15 Hitachi High-Technologies Corporation Pattern Measuring Condition Setting Device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4787673B2 (ja) * 2005-05-19 2011-10-05 株式会社Ｎｇｒ パターン検査装置および方法
JP2008235575A (ja) * 2007-03-20 2008-10-02 Toshiba Corp パターン測定方法、パターン測定装置およびプログラム
JP5438741B2 (ja) 2011-10-26 2014-03-12 株式会社アドバンテスト パターン測定装置及びパターン測定方法
JP6001945B2 (ja) * 2012-07-24 2016-10-05 株式会社日立ハイテクノロジーズ パターン計測装置及び方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101038670A (zh) * 2006-03-14 2007-09-19 株式会社日立高新技术 试样尺寸测定方法及试样尺寸测定装置
US20110127429A1 (en) * 2008-03-31 2011-06-02 Atsushi Miyamoto Method and Apparatus For Measuring Dimension Of Circuit Pattern Formed On Substrate By Using Scanning Electron Microscope
US20120290990A1 (en) * 2009-12-25 2012-11-15 Hitachi High-Technologies Corporation Pattern Measuring Condition Setting Device
JP2011191296A (ja) * 2010-03-16 2011-09-29 Ngr Inc パターン検査装置および方法

Also Published As

Publication number Publication date
WO2021235227A1 (ja) 2021-11-25
TW202201590A (zh) 2022-01-01
JP7303155B2 (ja) 2023-07-04
US20230186459A1 (en) 2023-06-15
KR20230012016A (ko) 2023-01-25
JP2021182601A (ja) 2021-11-25

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