JP7301966B2 - 半導体膜 - Google Patents

半導体膜 Download PDF

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Publication number
JP7301966B2
JP7301966B2 JP2021528677A JP2021528677A JP7301966B2 JP 7301966 B2 JP7301966 B2 JP 7301966B2 JP 2021528677 A JP2021528677 A JP 2021528677A JP 2021528677 A JP2021528677 A JP 2021528677A JP 7301966 B2 JP7301966 B2 JP 7301966B2
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Japan
Prior art keywords
film
semiconductor film
film thickness
semiconductor
substrate
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JP2021528677A
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English (en)
Japanese (ja)
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JPWO2020261355A1 (https=
JPWO2020261355A5 (https=
Inventor
潤 吉川
守道 渡邊
宏史 福井
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Chemical Vapour Deposition (AREA)
JP2021528677A 2019-06-25 2019-06-25 半導体膜 Active JP7301966B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/025042 WO2020261355A1 (ja) 2019-06-25 2019-06-25 半導体膜

Publications (3)

Publication Number Publication Date
JPWO2020261355A1 JPWO2020261355A1 (https=) 2020-12-30
JPWO2020261355A5 JPWO2020261355A5 (https=) 2022-03-24
JP7301966B2 true JP7301966B2 (ja) 2023-07-03

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ID=74060792

Family Applications (1)

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JP2021528677A Active JP7301966B2 (ja) 2019-06-25 2019-06-25 半導体膜

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JP (1) JP7301966B2 (https=)
WO (1) WO2020261355A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202235664A (zh) * 2021-03-12 2022-09-16 日商信越化學工業股份有限公司 氧化物半導體膜及其成膜方法、半導體裝置
EP4417732A1 (en) 2021-10-14 2024-08-21 Shin-Etsu Chemical Co., Ltd. Film deposition device and manufacturing method
US20240425982A1 (en) 2021-11-02 2024-12-26 Shin-Etsu Chemical Co., Ltd. Film forming apparatus and film forming method, and oxide semiconductor film and laminate
JPWO2024122463A1 (https=) * 2022-12-06 2024-06-13

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027636A (ja) 2014-06-27 2016-02-18 株式会社Flosfia サセプタ
JP2016146442A (ja) 2015-01-29 2016-08-12 株式会社Flosfia 成膜装置および成膜方法
JP2018002544A (ja) 2016-06-30 2018-01-11 株式会社Flosfia 結晶性酸化物半導体膜およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027636A (ja) 2014-06-27 2016-02-18 株式会社Flosfia サセプタ
JP2016146442A (ja) 2015-01-29 2016-08-12 株式会社Flosfia 成膜装置および成膜方法
JP2018002544A (ja) 2016-06-30 2018-01-11 株式会社Flosfia 結晶性酸化物半導体膜およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HA,Minh-Tan, et al.，Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition，ECS Journal of Solid State Science and Technology，2019年04月19日，vol.8,no.7，Q3206-Q3212，<DOI:10.1149/2.0381907jss>
KIM,Kyoung-Ho, et al.，Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition，ECS Journal of Solid State Science and Technology，2019年03月20日，vol.8,no.7，Q3165-Q3170，<DOI:10.1149/2.0301907jss>

Also Published As

Publication number Publication date
WO2020261355A1 (ja) 2020-12-30
JPWO2020261355A1 (https=) 2020-12-30

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