JPWO2020261355A1 - - Google Patents
Info
- Publication number
- JPWO2020261355A1 JPWO2020261355A1 JP2021528677A JP2021528677A JPWO2020261355A1 JP WO2020261355 A1 JPWO2020261355 A1 JP WO2020261355A1 JP 2021528677 A JP2021528677 A JP 2021528677A JP 2021528677 A JP2021528677 A JP 2021528677A JP WO2020261355 A1 JPWO2020261355 A1 JP WO2020261355A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/025042 WO2020261355A1 (ja) | 2019-06-25 | 2019-06-25 | 半導体膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020261355A1 true JPWO2020261355A1 (https=) | 2020-12-30 |
| JPWO2020261355A5 JPWO2020261355A5 (https=) | 2022-03-24 |
| JP7301966B2 JP7301966B2 (ja) | 2023-07-03 |
Family
ID=74060792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021528677A Active JP7301966B2 (ja) | 2019-06-25 | 2019-06-25 | 半導体膜 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7301966B2 (https=) |
| WO (1) | WO2020261355A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202235664A (zh) * | 2021-03-12 | 2022-09-16 | 日商信越化學工業股份有限公司 | 氧化物半導體膜及其成膜方法、半導體裝置 |
| EP4417732A1 (en) | 2021-10-14 | 2024-08-21 | Shin-Etsu Chemical Co., Ltd. | Film deposition device and manufacturing method |
| US20240425982A1 (en) | 2021-11-02 | 2024-12-26 | Shin-Etsu Chemical Co., Ltd. | Film forming apparatus and film forming method, and oxide semiconductor film and laminate |
| JPWO2024122463A1 (https=) * | 2022-12-06 | 2024-06-13 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016027636A (ja) * | 2014-06-27 | 2016-02-18 | 株式会社Flosfia | サセプタ |
| JP2016146442A (ja) * | 2015-01-29 | 2016-08-12 | 株式会社Flosfia | 成膜装置および成膜方法 |
| JP2018002544A (ja) * | 2016-06-30 | 2018-01-11 | 株式会社Flosfia | 結晶性酸化物半導体膜およびその製造方法 |
-
2019
- 2019-06-25 JP JP2021528677A patent/JP7301966B2/ja active Active
- 2019-06-25 WO PCT/JP2019/025042 patent/WO2020261355A1/ja not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016027636A (ja) * | 2014-06-27 | 2016-02-18 | 株式会社Flosfia | サセプタ |
| JP2016146442A (ja) * | 2015-01-29 | 2016-08-12 | 株式会社Flosfia | 成膜装置および成膜方法 |
| JP2018002544A (ja) * | 2016-06-30 | 2018-01-11 | 株式会社Flosfia | 結晶性酸化物半導体膜およびその製造方法 |
Non-Patent Citations (2)
| Title |
|---|
| HA,MINH-TAN, ET AL.: "Understanding Thickness Uniformity of Ga2O3 Thin Films Grown by Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 8, no. 7, JPN6019033544, 19 April 2019 (2019-04-19), pages 3206 - 3212, ISSN: 0004978206 * |
| KIM,KYOUNG-HO, ET AL.: "Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition", ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, vol. 8, no. 7, JPN6019033543, 20 March 2019 (2019-03-20), pages 3165 - 3170, ISSN: 0004978205 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7301966B2 (ja) | 2023-07-03 |
| WO2020261355A1 (ja) | 2020-12-30 |
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