JP7262212B2 - 成膜装置、成膜方法および電子デバイスを製造する方法 - Google Patents

成膜装置、成膜方法および電子デバイスを製造する方法 Download PDF

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Publication number
JP7262212B2
JP7262212B2 JP2018221606A JP2018221606A JP7262212B2 JP 7262212 B2 JP7262212 B2 JP 7262212B2 JP 2018221606 A JP2018221606 A JP 2018221606A JP 2018221606 A JP2018221606 A JP 2018221606A JP 7262212 B2 JP7262212 B2 JP 7262212B2
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evaporation
evaporation sources
crucibles
film forming
substrate
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JP2019218623A5 (enExample
JP2019218623A (ja
Inventor
利治 住谷
雄樹 相澤
悠 深澤
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Canon Tokki Corp
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Canon Tokki Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2018221606A 2018-06-15 2018-11-27 成膜装置、成膜方法および電子デバイスを製造する方法 Active JP7262212B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020180068493A KR101965102B1 (ko) 2018-06-15 2018-06-15 성막장치, 성막방법 및 전자 디바이스 제조방법
KR10-2018-0068493 2018-06-15

Publications (3)

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JP2019218623A JP2019218623A (ja) 2019-12-26
JP2019218623A5 JP2019218623A5 (enExample) 2022-01-06
JP7262212B2 true JP7262212B2 (ja) 2023-04-21

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JP2018221606A Active JP7262212B2 (ja) 2018-06-15 2018-11-27 成膜装置、成膜方法および電子デバイスを製造する方法

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JP (1) JP7262212B2 (enExample)
KR (1) KR101965102B1 (enExample)
CN (1) CN110607504B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111676454B (zh) * 2020-08-04 2023-09-05 光驰科技(上海)有限公司 一种节省真空镀膜室内空间的蒸发源配置结构及其设计方法
CN112538605B (zh) * 2020-12-03 2024-05-14 福建华佳彩有限公司 一种蒸镀设备
CN112626462B (zh) * 2020-12-11 2023-05-30 江苏集萃有机光电技术研究所有限公司 一种蒸镀源供料装置及蒸镀源供料方法
JP7314210B2 (ja) 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7755400B2 (ja) 2021-06-30 2025-10-16 キヤノントッキ株式会社 成膜装置及び成膜方法
JP7314209B2 (ja) 2021-06-30 2023-07-25 キヤノントッキ株式会社 成膜装置、成膜方法及び蒸発源ユニット
JP7734023B2 (ja) 2021-09-01 2025-09-04 キヤノントッキ株式会社 成膜装置、成膜方法及び電子デバイスの製造方法
CN114150273A (zh) * 2021-12-06 2022-03-08 深圳市华星光电半导体显示技术有限公司 蒸镀装置及蒸镀方法
CN115110037B (zh) * 2022-06-23 2024-01-12 北海惠科半导体科技有限公司 蒸发镀膜装置的镀膜方法和蒸发镀膜装置
JP2024080102A (ja) 2022-12-01 2024-06-13 キヤノントッキ株式会社 蒸発源ユニット、成膜装置及び成膜方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313657A (ja) 2002-04-25 2003-11-06 Tohoku Pioneer Corp 蒸着装置の制御方法及び蒸着装置
JP2006249575A (ja) 2005-03-09 2006-09-21 Samsung Sdi Co Ltd マルチ真空蒸着装置及び制御方法
JP2007239070A (ja) 2006-03-10 2007-09-20 Fujifilm Corp 真空蒸着装置
JP2011080136A (ja) 2009-10-09 2011-04-21 Ulvac Japan Ltd 蒸着装置及び蒸着方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
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JP2005029895A (ja) * 2003-07-04 2005-02-03 Agfa Gevaert Nv 蒸着装置
KR101323029B1 (ko) * 2006-12-26 2013-10-29 엘지디스플레이 주식회사 리볼버를 포함하는 증착 장치
KR101104802B1 (ko) * 2009-05-06 2012-01-12 (주)알파플러스 하향식 노즐형 진공 증발원 장치 및 이를 이용한 하향식 노즐형 진공 증착 장치
KR20130045432A (ko) * 2011-10-26 2013-05-06 주식회사 탑 엔지니어링 회전식 증착 장치
CN103305803B (zh) * 2013-05-23 2015-05-20 四川虹视显示技术有限公司 基于温度控制系统的oled有机层蒸镀温度控制方法
CN103526164B (zh) * 2013-10-23 2015-09-09 京东方科技集团股份有限公司 一种蒸镀设备
KR101562275B1 (ko) * 2014-05-30 2015-10-22 주식회사 선익시스템 증착장치
CN107002232A (zh) * 2014-11-26 2017-08-01 应用材料公司 用于蒸发目的的坩锅组件
JP2017088976A (ja) * 2015-11-13 2017-05-25 神港精機株式会社 多元系被膜形成装置および多元系被膜形成方法
CN107177821B (zh) * 2017-06-12 2019-04-23 京东方科技集团股份有限公司 坩埚装置
CN107604317B (zh) * 2017-09-21 2019-11-26 武汉华星光电半导体显示技术有限公司 一种蒸镀坩埚以及蒸镀装置
CN107815648B (zh) * 2017-09-26 2019-11-05 上海升翕光电科技有限公司 一种线性蒸发源装置及蒸镀设备

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003313657A (ja) 2002-04-25 2003-11-06 Tohoku Pioneer Corp 蒸着装置の制御方法及び蒸着装置
JP2006249575A (ja) 2005-03-09 2006-09-21 Samsung Sdi Co Ltd マルチ真空蒸着装置及び制御方法
JP2007239070A (ja) 2006-03-10 2007-09-20 Fujifilm Corp 真空蒸着装置
JP2011080136A (ja) 2009-10-09 2011-04-21 Ulvac Japan Ltd 蒸着装置及び蒸着方法

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KR101965102B1 (ko) 2019-04-02
JP2019218623A (ja) 2019-12-26
CN110607504B (zh) 2021-12-07
CN110607504A (zh) 2019-12-24

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