JP7257136B2 - 半導体装置及び負荷制御システム - Google Patents
半導体装置及び負荷制御システム Download PDFInfo
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- JP7257136B2 JP7257136B2 JP2018231894A JP2018231894A JP7257136B2 JP 7257136 B2 JP7257136 B2 JP 7257136B2 JP 2018231894 A JP2018231894 A JP 2018231894A JP 2018231894 A JP2018231894 A JP 2018231894A JP 7257136 B2 JP7257136 B2 JP 7257136B2
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- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H02M3/00—Conversion of dc power input into dc power output
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Description
本発明の第1実施形態を説明する。図1は本発明の第1実施形態に係る負荷駆動装置1の全体構成図である。負荷駆動装置1は、一次側に設けられた回路である一次側回路10と、二次側に設けられた回路である二次側回路20と、を備える。負荷駆動装置1において、一次側と二次側は互いに絶縁されている、換言すれば一次側回路10と二次側回路20は互いに絶縁されている。また、負荷駆動装置1は、一次側回路10と二次側回路20に亘って設けられるトランスTR及びフォトカプラPCを備える。トランスTRは、一次側回路10に配置された一次側巻線W1と、二次側回路20に配置された二次側巻線W2と、を備える。トランスTRにおいて、一次側巻線W1と二次側巻線W2とは電気的に絶縁されつつ互いに逆極性にて磁気結合されている。フォトカプラPCは、一次側回路10に配置された発光素子31と、二次側回路20に配置された受光素子32と、を備える。
本発明の第2実施形態を説明する。第2実施形態及び後述の第3~第6実施形態は第1実施形態を基礎とする実施形態であり、第2~第6実施形態において特に述べない事項に関しては、矛盾の無い限り、第1実施形態の記載が第2~第6実施形態にも適用される。第2実施形態の記載を解釈するにあたり、第1及び第2実施形態間で矛盾する事項については第2実施形態の記載が優先されて良い(後述の第3~第6実施形態についても同様)。矛盾の無い限り、第1~第6実施形態の内、任意の複数の実施形態を組み合わせても良い。
“VD<VREF1”の成立時において、全てローレベルとなり(これを第1出力パターンと称する)、
“VREF1≦VD<VREF2”の成立時において、夫々、ハイレベル、ローレベル、ローレベル、ローレベルとなり(これを第2出力パターンと称する)、
“VREF2≦VD<VREF3”の成立時において、夫々、ハイレベル、ハイレベル、ローレベル、ローレベルとなり(これを第3出力パターンと称する)、
“VREF3≦VD<VREF4”の成立時において、夫々、ハイレベル、ハイレベル、ハイレベル、ローレベルとなり(これを第4出力パターンと称する)、
“VREF4≦VD”の成立時において、全てハイレベルとなる(これを第5出力パターンと称する)。
本発明の第3実施形態を説明する。図9に、信号生成回路120の他の例としての信号生成回路120Bの構成を示す。信号生成回路120Bは、トランジスタ151~154、比較器155、RS型フリップフロップであるFF156、オシレータ157、抵抗158~160及びコンデンサ161を備える。トランジスタ151及び154はNチャネル型のMOSFETとして構成され、トランジスタ152及び153はPチャネル型のMOSFETとして構成される。
本発明の第4実施形態を説明する。一次側回路10では外部端子TM1及びTM2に比較的高い電圧が加わる。第4実施形態では、耐圧設計に注目した半導体基板の構造説明等を行う。
本発明の第5実施形態を説明する。図14に一次側IC100における外部端子の配列の例を示す。一次側IC100を構成する半導体基板及び半導体集積回路が樹脂にて構成された筐体(パッケージ)内に封入される。一次側IC100の筐体は概略直方体形状を有し、当該筐体の第1面から第1方向に向けて外部端子PIN1~PIN4が突出して設けられ、当該筐体の第2面から第2方向に向けて外部端子PIN5~PIN7が突出して設けられる。第1面及び第2面は互いに対向する面であり、第2方向は第1方向とは逆の方向である。第1方向及び第2方向に直交する第3方向に沿って、外部端子PIN1、PIN2、PIN3、PIN4が、この順番で配列され、且つ、外部端子PIN7、PIN6、PIN5が、この順番で配列される。第1面において外部端子PIN1~PIN4は等間隔で配置される。互いに隣接する外部端子PIN1及びPIN2間の距離を“dA”にて表す。外部端子PIN2及びPIN3間の距離も外部端子PIN3及びPIN4間の距離も距離dAと一致する。第2面では、外部端子PIN5及びPIN6が互いに隣接し、外部端子PIN6及びPIN7が互いに隣接する。外部端子PIN5及びPIN6間の距離は距離dAと等しいが、外部端子PIN6及びPIN7間の距離dBは距離dAよりも大きい。
本発明の第6実施形態を説明する。第6実施形態では、上述の第1~第5実施形態の任意の何れかに適用可能な変形技術や応用技術等を説明する。
10 一次側回路
20 二次側回路
24 負荷制御回路
100 一次側IC(半導体装置)
110 分圧抵抗部
120、120A、120B 信号生成回路
LD 負荷
VP 一次側電圧
VS 二次側電圧
S1 電圧情報信号
Claims (13)
- 一次側電圧から絶縁形式で二次側電圧を生成するシステムの一次側に配置される半導体装置であって、
前記一次側電圧に基づく電圧情報を絶縁形式で二次側に伝達するための電圧情報信号を生成する信号生成回路を備え、
前記信号生成回路は、前記一次側電圧に応じた電圧を受ける第1入力端子及び所定の基準電圧を受ける第2入力端子を有して前記一次側電圧に応じた電圧と前記基準電圧との比較結果を示す信号を出力する比較器を有し、前記比較器の出力信号を用いて前記電圧情報信号を生成する
、半導体装置。 - 前記信号生成回路は、前記一次側電圧を分圧して得られる入力電圧に基づき前記電圧情報信号を生成する
、請求項1に記載の半導体装置。 - 一次側電圧から絶縁形式で二次側電圧を生成するシステムの一次側に配置される半導体装置であって、
前記一次側電圧に基づく電圧情報を絶縁形式で二次側に伝達するための電圧情報信号を生成する信号生成回路を備え、
前記信号生成回路は、前記一次側電圧を分圧して得られる入力電圧に基づき前記電圧情報信号を生成し、
前記信号生成回路は、前記入力電圧を複数の基準電圧と比較する複数の比較器を有し、各比較器での比較結果に応じて前記電圧情報信号を生成する
、半導体装置。 - 前記信号生成回路は、前記入力電圧に応じた電流を生成する電流生成回路を有し、前記電流の大きさに応じた信号を前記電圧情報信号として生成する
、請求項2に記載の半導体装置。 - 前記一次側電圧を分圧して前記入力電圧を得るための分圧抵抗部を更に備え、
前記分圧抵抗部及び前記信号生成回路が単一の半導体基板に集積化して構成される
、請求項2~4の何れかに記載の半導体装置。 - 前記半導体基板には、高耐圧領域と他領域とが形成されており、
基板厚さ方向における耐圧は、前記高耐圧領域において前記他領域よりも高く、
前記分圧抵抗部は、前記高耐圧領域上に形成される
、請求項5に記載の半導体装置。 - 前記高耐圧領域は、LDMOSFET領域である
、請求項6に記載の半導体装置。 - 前記LDMOSFET領域には、夫々に環形状を有する複数のドレイン領域と夫々に環形状を有する複数のソース領域とが形成され、前記ドレイン領域と前記ソース領域は同心にて交互に形成され、
前記分圧抵抗部は、前記複数のドレイン領域の内、最内周のドレイン領域に囲まれたフィールド酸化膜上に形成される
、請求項7に記載の半導体装置。 - 前記半導体基板を収容する筐体から突出する複数の外部端子を備え、
前記複数の外部端子は、前記一次側電圧の入力を受けるための第1外部端子と、前記第1外部端子とは異なる複数の第2外部端子と、を含み、
前記複数の第2外部端子の内、前記第1外部端子に隣接する第2外部端子と前記第1外部端子との距離は、前記複数の第2外部端子の内、互いに隣接し合う2本の第2外部端子間の距離と比べて、大きい
、請求項5~8の何れかに記載の半導体装置。 - 前記半導体基板を収容する筐体から突出する複数の外部端子を備え、
前記複数の外部端子は、前記一次側電圧の入力を受けるための第1外部端子と、前記第1外部端子とは異なる複数の第2外部端子と、を含み、
前記第1外部端子は前記筐体の端部に配置される
、請求項5~8の何れかに記載の半導体装置。 - 前記信号生成回路は、前記一次側電圧に応じてパルス幅変調された信号又はパルス周波数変調された信号を、前記電圧情報信号として生成する
、請求項1~10の何れかに記載の半導体装置。 - 前記電圧情報はフォトカプラ又はトランスを用いて前記二次側に伝達される
、請求項1~11の何れかに記載の半導体装置。 - 請求項1~12の何れかに記載の半導体装置と、
前記二次側電圧に基づき駆動する負荷を制御する、前記二次側に配置された負荷制御回路と、を備え、
前記負荷制御回路は、前記半導体装置から伝達された前記電圧情報に基づき前記負荷を制御する
、負荷制御システム。
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