JP7246591B1 - 光半導体装置 - Google Patents

光半導体装置 Download PDF

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Publication number
JP7246591B1
JP7246591B1 JP2023503168A JP2023503168A JP7246591B1 JP 7246591 B1 JP7246591 B1 JP 7246591B1 JP 2023503168 A JP2023503168 A JP 2023503168A JP 2023503168 A JP2023503168 A JP 2023503168A JP 7246591 B1 JP7246591 B1 JP 7246591B1
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Prior art keywords
layer
light absorption
absorption layer
scattered light
semiconductor device
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JP2023503168A
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Japanese (ja)
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JPWO2024069755A5 (https=
JPWO2024069755A1 (https=
Inventor
真也 奥田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2023503168A 2022-09-27 2022-09-27 光半導体装置 Active JP7246591B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/035944 WO2024069755A1 (ja) 2022-09-27 2022-09-27 光半導体装置

Publications (3)

Publication Number Publication Date
JP7246591B1 true JP7246591B1 (ja) 2023-03-27
JPWO2024069755A1 JPWO2024069755A1 (https=) 2024-04-04
JPWO2024069755A5 JPWO2024069755A5 (https=) 2024-09-05

Family

ID=85716995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023503168A Active JP7246591B1 (ja) 2022-09-27 2022-09-27 光半導体装置

Country Status (4)

Country Link
US (1) US20260005488A1 (https=)
JP (1) JP7246591B1 (https=)
CN (1) CN119866582A (https=)
WO (1) WO2024069755A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116899914A (zh) * 2023-09-14 2023-10-20 厦门优迅高速芯片有限公司 Eml激光器筛选方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271583A (ja) * 1989-04-12 1990-11-06 Fujitsu Ltd レーザ集積化光変調器
JPH0377386A (ja) * 1989-08-19 1991-04-02 Fujitsu Ltd 半導体発光装置
JPH11154770A (ja) * 1997-11-21 1999-06-08 Oki Electric Ind Co Ltd 集積型半導体光素子およびその製造方法
JP2002131713A (ja) * 2000-10-19 2002-05-09 Mitsubishi Electric Corp 光半導体デバイス
US20040105476A1 (en) * 2002-08-19 2004-06-03 Wasserbauer John G. Planar waveguide surface emitting laser and photonic integrated circuit
JP2005223043A (ja) * 2004-02-04 2005-08-18 Nippon Telegr & Teleph Corp <Ntt> 光集積デバイス
JP2010267801A (ja) * 2009-05-14 2010-11-25 Sumitomo Electric Ind Ltd 集積化半導体光素子及び半導体光装置
WO2019111295A1 (ja) * 2017-12-04 2019-06-13 三菱電機株式会社 電界吸収型変調器、光半導体装置及び光モジュール

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02271583A (ja) * 1989-04-12 1990-11-06 Fujitsu Ltd レーザ集積化光変調器
JPH0377386A (ja) * 1989-08-19 1991-04-02 Fujitsu Ltd 半導体発光装置
JPH11154770A (ja) * 1997-11-21 1999-06-08 Oki Electric Ind Co Ltd 集積型半導体光素子およびその製造方法
JP2002131713A (ja) * 2000-10-19 2002-05-09 Mitsubishi Electric Corp 光半導体デバイス
US20040105476A1 (en) * 2002-08-19 2004-06-03 Wasserbauer John G. Planar waveguide surface emitting laser and photonic integrated circuit
JP2005223043A (ja) * 2004-02-04 2005-08-18 Nippon Telegr & Teleph Corp <Ntt> 光集積デバイス
JP2010267801A (ja) * 2009-05-14 2010-11-25 Sumitomo Electric Ind Ltd 集積化半導体光素子及び半導体光装置
WO2019111295A1 (ja) * 2017-12-04 2019-06-13 三菱電機株式会社 電界吸収型変調器、光半導体装置及び光モジュール

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116899914A (zh) * 2023-09-14 2023-10-20 厦门优迅高速芯片有限公司 Eml激光器筛选方法
CN116899914B (zh) * 2023-09-14 2024-01-23 厦门优迅高速芯片有限公司 Eml激光器筛选方法

Also Published As

Publication number Publication date
US20260005488A1 (en) 2026-01-01
JPWO2024069755A1 (https=) 2024-04-04
CN119866582A (zh) 2025-04-22
WO2024069755A1 (ja) 2024-04-04

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