JP7246402B2 - ポリ-パラ-キシリレンの均一な薄膜堆積 - Google Patents
ポリ-パラ-キシリレンの均一な薄膜堆積 Download PDFInfo
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- JP7246402B2 JP7246402B2 JP2020543082A JP2020543082A JP7246402B2 JP 7246402 B2 JP7246402 B2 JP 7246402B2 JP 2020543082 A JP2020543082 A JP 2020543082A JP 2020543082 A JP2020543082 A JP 2020543082A JP 7246402 B2 JP7246402 B2 JP 7246402B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Description
以下の実施例は、公知のCVD法(それぞれ、図4A及び5A)及び本発明の方法(それぞれ、図4B及び5B)によって形成されたパリレンフィルムの被覆厚さ及び真空チャンバ温度を比較する。図4A及び4Bにおいて、x軸上のラック棚位置は、堆積チャンバ内部の相対位置を表す。正規化された被覆厚さをy軸に示す。図示のように、グラフ400(図4A)のフィルムの厚さは実質的に変化し、被覆の不均一性は31.8%であった。しかしながら、グラフ410(図4B)のフィルムの厚さは実質的に均一であり、被覆の不均一性は5.8%であった。
Claims (11)
- ポリ-パラ-キシリレンフィルムを形成するための堆積チャンバであって:
チャンバ本体;
前記チャンバ本体を、ポリ-パラ-キシリレンモノマー前駆体を含む炉に結合する入口;
前記チャンバ本体を真空ポンプに連結する出口;
前記チャンバ本体の全内部容積に亘って配置され、複数の物体を収容するための複数の棚;及び
前記チャンバ本体の外側表面の大部分を覆うように配置された加熱流体ジャケットであり、前記チャンバ本体の内部容積全体の温度を、前記チャンバ本体の入口壁での温度と後部の温度との温度差が6.5℃以下になるような均一な内部温度に上昇させるように構成される、加熱流体ジャケット;
を含む堆積チャンバ。 - 前記均一な内部温度は、30~40℃である、請求項1に記載の堆積チャンバ。
- 前記チャンバ本体に適用される前記加熱流体ジャケットは、135~155℃の温度に上昇される、請求項1に記載の堆積チャンバ。
- 前記均一な内部温度は、室温以上である、請求項1に記載の堆積チャンバ。
- 前記均一な温度は、最高温度と最低温度との差が5℃未満である、請求項1に記載の堆積チャンバ。
- 前記チャンバ本体の内部容積全体の最高温度と最低温度との差が5℃未満である、請求項1に記載の堆積チャンバ。
- 堆積チャンバ内でポリ-パラ-キシリレンフィルムを形成する方法であって:
チャンバ本体をもたらすステップ;
前記チャンバ本体の入り口を、ポリ-パラ-キシリレンモノマー前駆体を含む炉に結合するステップ;
前記チャンバ本体の出口を真空ポンプに連結するステップ;
複数の物体を収容するための複数の棚を前記チャンバ本体の全内部容積に亘って配置するステップ;及び
加熱流体ジャケットを前記チャンバ本体の外側表面の大部分を覆うように配置するステップ;
前記チャンバ本体の内部容積全体の温度を、前記チャンバ本体の入口壁での温度と後部の温度との温度差が6.5℃以下になるような均一な内部温度に上昇させるステップ;及び
前記チャンバ本体内の物体の表面上にポリ-パラ-キシリレンフィルムを形成するために、前記チャンバ本体内でモノマー前駆体を重合させるステップ;
を含む方法。 - 前記均一な内部温度が30~40℃である、請求項7に記載の方法。
- 前記チャンバ本体に適用される前記加熱流体ジャケットは、135℃~155℃の温度に上昇される、請求項7に記載の方法。
- 前記均一な内部温度は、室温より高い温度である、請求項7に記載の方法。
- 前記均一な内部温度は、最高温度と最低温度との差が5℃未満である、請求項7に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/964,959 US20190329286A1 (en) | 2018-04-27 | 2018-04-27 | Uniform thin film deposition for poly-p-xylylene |
US15/964,959 | 2018-04-27 | ||
PCT/US2019/028609 WO2019209761A1 (en) | 2018-04-27 | 2019-04-23 | Uniform thin film deposition for poly-p-xylylene |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021513607A JP2021513607A (ja) | 2021-05-27 |
JP7246402B2 true JP7246402B2 (ja) | 2023-03-27 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2020543082A Active JP7246402B2 (ja) | 2018-04-27 | 2019-04-23 | ポリ-パラ-キシリレンの均一な薄膜堆積 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20190329286A1 (ja) |
EP (1) | EP3784413A1 (ja) |
JP (1) | JP7246402B2 (ja) |
CN (1) | CN112055623B (ja) |
WO (1) | WO2019209761A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN115463803B (zh) * | 2021-12-15 | 2023-09-22 | 上海交通大学 | 一种化学气相沉积装置以及高厚度Parylene-N膜的制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2015517021A (ja) | 2012-02-10 | 2015-06-18 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | ブロックコポリマー薄膜においてドメインの配向性を制御するための化学蒸着された膜の使用 |
US20170349697A1 (en) | 2016-06-02 | 2017-12-07 | May-Hwa Enterprise Corporation | Patterned film structure, patterned film composite structure, method of selective inhibition of formation of organic film and method of selective adjustment of thickness of organic film |
Family Cites Families (20)
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US4495889A (en) * | 1982-11-24 | 1985-01-29 | Riley Thomas J | Polymeric film coating apparatus |
US4945856A (en) * | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
US5268033A (en) * | 1991-07-01 | 1993-12-07 | Jeffrey Stewart | Table top parylene deposition chamber |
JPH0855810A (ja) * | 1994-08-16 | 1996-02-27 | Nec Kyushu Ltd | 拡散炉 |
US5958510A (en) * | 1996-01-08 | 1999-09-28 | Applied Materials, Inc. | Method and apparatus for forming a thin polymer layer on an integrated circuit structure |
US6140456A (en) * | 1997-10-24 | 2000-10-31 | Quester Techology, Inc. | Chemicals and processes for making fluorinated poly(para-xylylenes) |
US20030198578A1 (en) * | 2002-04-18 | 2003-10-23 | Dielectric Systems, Inc. | Multi-stage-heating thermal reactor for transport polymerization |
US20030188683A1 (en) * | 2002-04-04 | 2003-10-09 | Dielectric Systems, Inc. | UV reactor for transport polymerization |
US20040055539A1 (en) * | 2002-09-13 | 2004-03-25 | Dielectric Systems, Inc. | Reactive-reactor for generation of gaseous intermediates |
US20030196680A1 (en) * | 2002-04-19 | 2003-10-23 | Dielectric Systems, Inc | Process modules for transport polymerization of low epsilon thin films |
US7455448B2 (en) * | 2004-07-26 | 2008-11-25 | Texas Instruments Incorporated | Rapid thermal anneal equipment and method using sichrome film |
JP5194008B2 (ja) * | 2007-06-22 | 2013-05-08 | 株式会社アルバック | 半導体ウェーハの保護方法及び半導体装置の製造方法 |
TWI376426B (en) * | 2008-12-15 | 2012-11-11 | Ind Tech Res Inst | Chemical vapor deposition apparatus and method of forminf parylene film |
JP2014011234A (ja) * | 2012-06-28 | 2014-01-20 | Tokyo Electron Ltd | シリコン酸化膜の形成方法およびその形成装置 |
TWI508948B (zh) * | 2014-01-06 | 2015-11-21 | Hsien Yeh Chen | 位在基材上的化學膜具有n-羥基琥珀醯亞胺基的聚對二甲苯以及其形成方法、製作具有n-羥基琥珀醯亞胺基的對環芬的方法 |
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US20160186320A1 (en) * | 2014-12-26 | 2016-06-30 | Metal Industries Research And Development Centre | Apparatus for continuously forming a film through chemical vapor deposition |
US10798781B2 (en) * | 2015-05-13 | 2020-10-06 | Arsalan Emami | Horizontal modular heater |
CN105039935A (zh) * | 2015-08-24 | 2015-11-11 | 深圳市星火辉煌系统工程有限公司 | 一种高分子真空涂覆设备 |
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2018
- 2018-04-27 US US15/964,959 patent/US20190329286A1/en active Pending
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2019
- 2019-04-23 JP JP2020543082A patent/JP7246402B2/ja active Active
- 2019-04-23 WO PCT/US2019/028609 patent/WO2019209761A1/en active Application Filing
- 2019-04-23 CN CN201980027647.4A patent/CN112055623B/zh active Active
- 2019-04-23 EP EP19727140.6A patent/EP3784413A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015517021A (ja) | 2012-02-10 | 2015-06-18 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | ブロックコポリマー薄膜においてドメインの配向性を制御するための化学蒸着された膜の使用 |
US20170349697A1 (en) | 2016-06-02 | 2017-12-07 | May-Hwa Enterprise Corporation | Patterned film structure, patterned film composite structure, method of selective inhibition of formation of organic film and method of selective adjustment of thickness of organic film |
Also Published As
Publication number | Publication date |
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CN112055623A (zh) | 2020-12-08 |
WO2019209761A1 (en) | 2019-10-31 |
US20190329286A1 (en) | 2019-10-31 |
JP2021513607A (ja) | 2021-05-27 |
CN112055623B (zh) | 2023-07-25 |
EP3784413A1 (en) | 2021-03-03 |
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