JP7233803B2 - 工業用製造機器における特性をリアルタイム感知するための装置及び方法 - Google Patents
工業用製造機器における特性をリアルタイム感知するための装置及び方法 Download PDFInfo
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Description
本出願は、2017年8月17日に出願された「APPARATUS AND METHOD FOR REAL-TIME SENSING OF PROPERTIES IN ELECTRONIC DEVICE MANUGACTURING EQUIPMENT」と題する米国仮特許出願第62/546,882号、及び2018年2月7日に出願された「APPARATUS AND METHOD FOR REAL-TIME SENSING OF PROPERTIES IN INDUSTRIAL MANUFACTURING EQUIPMENT」と題する米国仮特許出願第62/627,614号の利益を主張し、それらの全体が参照により本明細書に組み込まれる。
f0=f×(1+θα(T-T0))(1)
τ=L/V=L/(λf)(2)
Δτ/τ=ΔL/L-(Δλ/λ+Δf/f)ここでΔτ=τ-τ0(3)
Δτ/τ=-(Δf/f)(4)
Claims (19)
- 工業用製造装置内の特性をリアルタイム感知するための装置であって、
製造システムの処理環境内に取り付けられた第1の複数のセンサであって、各センサが異なる領域に割り当てられており、前記製造システムの前記割り当てられた領域の物理的又は化学的特性を監視する、第1の複数のセンサと、
(1)第1の要求パルス信号を前記第1の複数のセンサに送信することであって、前記第1の要求パルス信号が第1の周波数帯域に関連付けられている、ことと、(2)前記製造システムの割り当てられた各領域における前記物理的又は化学的特性の変動のリアルタイム監視を提供する前記第1の複数のセンサから一意に識別可能な応答信号を受信することと、を含む、単一の高周波問い合わせシーケンスを使用して、前記第1の複数のセンサを同時に且つ無線で問い合わせるように構成された構成要素を有するリーダーシステムと、を備え、
前記第1の複数のセンサが、前記第1の周波数帯域で動作している各センサからエコーされる前記応答信号間の衝突なしに前記の同時の問い合わせを可能にする設計規則に従って前記第1の周波数帯域で動作可能にされ、
各センサは、表面波を励起してその後検出するための櫛形トランスデューサと、表面波を回折して前記櫛形トランスデューサに向けて反射し戻す1つ以上の反射器グループとを含み、前記1つ以上の反射器グループが、前記櫛形トランスデューサからの波伝播経路に沿って所定の距離だけ離間されている、装置。 - 前記製造システムは、半導体製造システム、又は非半導体製造システムを含む、請求項1に記載の装置。
- 前記製造システムは、半導体デバイス、フォトニックデバイス、発光デバイス、光吸収デバイス、又は光検出デバイスの製造を容易にする、請求項2に記載の装置。
- 前記製造システムは、金属、半金属、非金属、ポリマー、プラスチック、セラミック、又はガラス若しくはガラス状のワークピースの製造を容易にする、請求項2に記載の装置。
- 前記製造システムの前記処理環境内に配置されるワークピースを更に備え、前記第1の複数のセンサが前記ワークピース上に取り付けられている、請求項1に記載の装置。
- 複数の、一意に定義された周波数帯域に割り当てられた複数のセンサグループを更に備え、前記複数のセンサグループが、前記第1の周波数帯域に割り当てられた前記第1の複数のセンサを含む、請求項1に記載の装置。
- 各センサは、表面弾性波(SAW)遅延線デバイスを含み、基板が、LiNbO3、LiTaO3、又はLa3Ga5SiO14を含む、請求項1に記載の装置。
- 前記物理的又は化学的特性は、温度又は温度差を含む、請求項1に記載の装置。
- 前記櫛形トランスデューサは、各センサと前記リーダーシステムとの間で信号を送信及び受信するための少なくとも1つのアンテナに結合される、請求項1に記載の装置。
- 各センサの前記1つ以上の反射器は、2つ以上の別個のエコーインパルス応答の列を呈する時間領域で、インパルス応答信号を生成するように配置されている、請求項1に記載の装置。
- 前記1つ以上の反射器グループは、前記櫛形トランスデューサの同じ側部上に配置されている、請求項1に記載の装置。
- 前記第1の周波数帯域のスペクトル範囲が100MHz未満である、請求項1に記載の装置。
- 前記単一の高周波問い合わせシーケンスには、時間分解励起信号でセンサに問い合わせ、受信したエコー信号を時間領域で処理すること、又は周波数変調励起信号でセンサに問い合わせ、受信したエコー信号を周波数領域で処理することが含まれる、請求項1に記載の装置。
- 前記リーダーシステムは、
前記第1の周波数帯域外の周波数の信号を取り除く第1の無線周波数(RF)フィルタを更に備える、請求項1に記載の装置。 - 前記処理環境は気相プラズマ環境を含む、請求項1に記載の装置。
- 前記第1の周波数帯域は、プラズマ励起周波数の高調波周波数を除外するように定義される、請求項15に記載の装置。
- 工業用の前記製造システムは、エッチングシステム、堆積システム、めっきシステム、洗浄システム、アッシングシステム、熱処理システム、リソグラフィコーティングシステム、又は研磨システムである、請求項1に記載の装置。
- 工業用の前記製造システム上、又は工業用の前記製造システム内に取り付けられた第2の複数のセンサであって、各センサが、異なる領域に割り当てられていて、前記システムの前記割り当てられた領域の物理的又は化学的特性を監視する、第2の複数のセンサを更に備え、前記第2の複数のセンサが、各センサからエコーされる前記応答信号間の衝突なしに前記の同時の問い合わせを可能にする設計規則に従って第2の周波数帯域で動作可能にされる、請求項1に記載の装置。
- 工業用の前記製造システムに存在する前記環境から各センサを絶縁するために、前記第1の複数のセンサを覆う保護層を更に備える、請求項1に記載の装置。
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