JP7212621B2 - 量子光光源素子およびその量子光学回路 - Google Patents

量子光光源素子およびその量子光学回路 Download PDF

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JP7212621B2
JP7212621B2 JP2019542719A JP2019542719A JP7212621B2 JP 7212621 B2 JP7212621 B2 JP 7212621B2 JP 2019542719 A JP2019542719 A JP 2019542719A JP 2019542719 A JP2019542719 A JP 2019542719A JP 7212621 B2 JP7212621 B2 JP 7212621B2
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semiconductor material
quantum
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light source
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JP2020506556A (ja
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ベニト・アレン・ミリャン
ダビド・フステル・シグネス
ヨランダ・ゴンサレス・ディアス
ルイサ・ゴンサレス・サトス
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
JP2019542719A 2017-02-08 2018-02-06 量子光光源素子およびその量子光学回路 Active JP7212621B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP17382061.4 2017-02-08
EP17382061.4A EP3361516B1 (en) 2017-02-08 2017-02-08 Device for emitting single photons or entangled photon pairs
PCT/EP2018/052960 WO2018146096A1 (en) 2017-02-08 2018-02-06 Quantum light source device and quantum optical circuit thereof

Publications (3)

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JP2020506556A JP2020506556A (ja) 2020-02-27
JP2020506556A5 JP2020506556A5 (https=) 2021-01-14
JP7212621B2 true JP7212621B2 (ja) 2023-01-25

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JP2019542719A Active JP7212621B2 (ja) 2017-02-08 2018-02-06 量子光光源素子およびその量子光学回路

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US (1) US11152535B2 (https=)
EP (1) EP3361516B1 (https=)
JP (1) JP7212621B2 (https=)
KR (1) KR102461670B1 (https=)
ES (1) ES2792076T3 (https=)
WO (1) WO2018146096A1 (https=)

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CN107731971B (zh) * 2017-10-24 2023-07-21 江门市奥伦德光电有限公司 一种基于光子晶体的垂直结构led芯片及其制备方法
WO2020180391A1 (en) * 2019-03-05 2020-09-10 Massachusetts Institute Of Technology Scalable integration of hybrid optoelectronic and quantum optical systems into photonic circuits
CN114303088B (zh) * 2019-09-20 2023-04-04 柏林洪堡大学 用于产生单光子的装置
KR102745348B1 (ko) * 2019-09-23 2024-12-23 삼성전자주식회사 광 변조 소자, 이를 포함하는 빔 스티어링 장치 및 빔 스티어링 장치를 포함하는 전자 장치
US11594656B2 (en) 2019-10-21 2023-02-28 Electronics And Telecommunications Research Institute Quantum light source device and optical communication apparatus including the same
KR102375861B1 (ko) * 2020-07-28 2022-03-16 광운대학교 산학협력단 백투백 구조의 초소형 이중 ｌｅｄ 소자 및 그 제조 방법과 백투백 구조의 초소형 이중 ｌｅｄ 의 전극 어셈블리 및 그 제조방법
CN112904351B (zh) * 2021-01-20 2023-10-24 重庆邮电大学 一种基于量子纠缠光关联特性的单源定位方法
US11575065B2 (en) 2021-01-29 2023-02-07 Applied Materials, Inc. Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers
EP4044261A1 (en) 2021-02-12 2022-08-17 ETH Zurich Confinement of neutral excitons in a semiconductor layer structure
CN114442340B (zh) * 2022-01-17 2024-09-24 哈尔滨工业大学 一种基于p-n结的近场辐射热流调制器
KR102654365B1 (ko) * 2022-04-18 2024-04-04 한국광기술원 발광 소자 및 그 제조 방법
CN115394883A (zh) * 2022-09-30 2022-11-25 中国电子科技集团公司第四十四研究所 基于量子阱及量子点混合有源区的超宽谱高增益饱和增益芯片
WO2025042446A2 (en) * 2023-04-04 2025-02-27 The Regents Of The University Of Michigan Heterostructures with two-dimensional active region
WO2026004394A1 (ja) * 2024-06-25 2026-01-02 ソニーグループ株式会社 発光装置

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JP2003202529A (ja) 2001-03-13 2003-07-18 Ricoh Co Ltd 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム
JP2006216722A (ja) 2005-02-02 2006-08-17 Tokyo Institute Of Technology 変調器集積面発光レーザ
US20060220000A1 (en) 2004-12-03 2006-10-05 Kabushiki Kaisha Toshiba Photon source
JP2008135591A (ja) 2006-11-29 2008-06-12 Nec Corp 量子もつれ光子対発生器
JP2013062354A (ja) 2011-09-13 2013-04-04 Hamamatsu Photonics Kk 半導体発光素子
JP2016042694A (ja) 2014-08-14 2016-03-31 株式会社東芝 干渉システムおよび干渉方法
JP2016086156A (ja) 2014-10-22 2016-05-19 株式会社東芝 光学デバイスおよび光学デバイスを製造する方法
JP2016164971A (ja) 2015-02-12 2016-09-08 株式会社東芝 光デバイスおよび光デバイス製造方法

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GB2475099B (en) 2009-11-06 2012-09-05 Toshiba Res Europ Ltd A photon source for producing entangled photons
GB2476926B (en) * 2009-11-06 2012-05-02 Toshiba Res Europ Ltd Tuneable quantum light source
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Patent Citations (8)

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Publication number Priority date Publication date Assignee Title
JP2003202529A (ja) 2001-03-13 2003-07-18 Ricoh Co Ltd 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム
US20060220000A1 (en) 2004-12-03 2006-10-05 Kabushiki Kaisha Toshiba Photon source
JP2006216722A (ja) 2005-02-02 2006-08-17 Tokyo Institute Of Technology 変調器集積面発光レーザ
JP2008135591A (ja) 2006-11-29 2008-06-12 Nec Corp 量子もつれ光子対発生器
JP2013062354A (ja) 2011-09-13 2013-04-04 Hamamatsu Photonics Kk 半導体発光素子
JP2016042694A (ja) 2014-08-14 2016-03-31 株式会社東芝 干渉システムおよび干渉方法
JP2016086156A (ja) 2014-10-22 2016-05-19 株式会社東芝 光学デバイスおよび光学デバイスを製造する方法
JP2016164971A (ja) 2015-02-12 2016-09-08 株式会社東芝 光デバイスおよび光デバイス製造方法

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US20200279972A1 (en) 2020-09-03
US11152535B2 (en) 2021-10-19
ES2792076T3 (es) 2020-11-10
KR20190116299A (ko) 2019-10-14
WO2018146096A1 (en) 2018-08-16
EP3361516B1 (en) 2019-12-18
EP3361516A1 (en) 2018-08-15
KR102461670B1 (ko) 2022-10-31
JP2020506556A (ja) 2020-02-27

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