ES2792076T3 - Dispositivo monolítico fuente de luz cuántica ajustable y circuito óptico cuántico del mismo - Google Patents

Dispositivo monolítico fuente de luz cuántica ajustable y circuito óptico cuántico del mismo Download PDF

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Publication number
ES2792076T3
ES2792076T3 ES17382061T ES17382061T ES2792076T3 ES 2792076 T3 ES2792076 T3 ES 2792076T3 ES 17382061 T ES17382061 T ES 17382061T ES 17382061 T ES17382061 T ES 17382061T ES 2792076 T3 ES2792076 T3 ES 2792076T3
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Spain
Prior art keywords
semiconductor material
layer
quantum
type semiconductor
type
Prior art date
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Active
Application number
ES17382061T
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English (en)
Spanish (es)
Inventor
Millan Benito Alen
Signes David Fuster
Diaz Yolanda Gonzalez
Sotos Luisa Gonzalez
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Consejo Superior de Investigaciones Cientificas CSIC
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Consejo Superior de Investigaciones Cientificas CSIC
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Devices (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
ES17382061T 2017-02-08 2017-02-08 Dispositivo monolítico fuente de luz cuántica ajustable y circuito óptico cuántico del mismo Active ES2792076T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP17382061.4A EP3361516B1 (en) 2017-02-08 2017-02-08 Device for emitting single photons or entangled photon pairs

Publications (1)

Publication Number Publication Date
ES2792076T3 true ES2792076T3 (es) 2020-11-10

Family

ID=58057078

Family Applications (1)

Application Number Title Priority Date Filing Date
ES17382061T Active ES2792076T3 (es) 2017-02-08 2017-02-08 Dispositivo monolítico fuente de luz cuántica ajustable y circuito óptico cuántico del mismo

Country Status (6)

Country Link
US (1) US11152535B2 (https=)
EP (1) EP3361516B1 (https=)
JP (1) JP7212621B2 (https=)
KR (1) KR102461670B1 (https=)
ES (1) ES2792076T3 (https=)
WO (1) WO2018146096A1 (https=)

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CN107731971B (zh) * 2017-10-24 2023-07-21 江门市奥伦德光电有限公司 一种基于光子晶体的垂直结构led芯片及其制备方法
WO2020180391A1 (en) * 2019-03-05 2020-09-10 Massachusetts Institute Of Technology Scalable integration of hybrid optoelectronic and quantum optical systems into photonic circuits
CN114303088B (zh) * 2019-09-20 2023-04-04 柏林洪堡大学 用于产生单光子的装置
KR102745348B1 (ko) * 2019-09-23 2024-12-23 삼성전자주식회사 광 변조 소자, 이를 포함하는 빔 스티어링 장치 및 빔 스티어링 장치를 포함하는 전자 장치
US11594656B2 (en) 2019-10-21 2023-02-28 Electronics And Telecommunications Research Institute Quantum light source device and optical communication apparatus including the same
KR102375861B1 (ko) * 2020-07-28 2022-03-16 광운대학교 산학협력단 백투백 구조의 초소형 이중 ｌｅｄ 소자 및 그 제조 방법과 백투백 구조의 초소형 이중 ｌｅｄ 의 전극 어셈블리 및 그 제조방법
CN112904351B (zh) * 2021-01-20 2023-10-24 重庆邮电大学 一种基于量子纠缠光关联特性的单源定位方法
US11575065B2 (en) 2021-01-29 2023-02-07 Applied Materials, Inc. Tuning of emission properties of quantum emission devices using strain-tuned piezoelectric template layers
EP4044261A1 (en) 2021-02-12 2022-08-17 ETH Zurich Confinement of neutral excitons in a semiconductor layer structure
CN114442340B (zh) * 2022-01-17 2024-09-24 哈尔滨工业大学 一种基于p-n结的近场辐射热流调制器
KR102654365B1 (ko) * 2022-04-18 2024-04-04 한국광기술원 발광 소자 및 그 제조 방법
CN115394883A (zh) * 2022-09-30 2022-11-25 中国电子科技集团公司第四十四研究所 基于量子阱及量子点混合有源区的超宽谱高增益饱和增益芯片
WO2025042446A2 (en) * 2023-04-04 2025-02-27 The Regents Of The University Of Michigan Heterostructures with two-dimensional active region
WO2026004394A1 (ja) * 2024-06-25 2026-01-02 ソニーグループ株式会社 発光装置

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US5583349A (en) * 1995-11-02 1996-12-10 Motorola Full color light emitting diode display
GB2354368B (en) * 1999-09-14 2001-12-05 Toshiba Res Europ Ltd A photon source
TW459371B (en) * 1999-12-02 2001-10-11 United Epitaxy Co Ltd Quantum well device with anti-electrostatic discharge and the manufacturing method thereof
JP2003202529A (ja) 2001-03-13 2003-07-18 Ricoh Co Ltd 半導体光変調器および半導体発光装置および波長可変レーザ装置および多波長レーザ装置および光伝送システム
US7132676B2 (en) 2001-05-15 2006-11-07 Kabushiki Kaisha Toshiba Photon source and a method of operating a photon source
GB2420908B (en) 2004-12-03 2008-01-23 Toshiba Res Europ Ltd Photon source
JP2006216722A (ja) 2005-02-02 2006-08-17 Tokyo Institute Of Technology 変調器集積面発光レーザ
JP4867621B2 (ja) 2006-11-29 2012-02-01 日本電気株式会社 量子もつれ光子対発生器
WO2011009465A1 (en) 2009-07-23 2011-01-27 Danmarks Tekniske Universitet An electrically driven single photon source
GB2475099B (en) 2009-11-06 2012-09-05 Toshiba Res Europ Ltd A photon source for producing entangled photons
GB2476926B (en) * 2009-11-06 2012-05-02 Toshiba Res Europ Ltd Tuneable quantum light source
US9941319B2 (en) * 2010-10-13 2018-04-10 Monolithic 3D Inc. Semiconductor and optoelectronic methods and devices
JP2013062354A (ja) 2011-09-13 2013-04-04 Hamamatsu Photonics Kk 半導体発光素子
US9696133B2 (en) 2014-08-14 2017-07-04 Kabushiki Kaisha Toshiba Interference system and an interference method
GB2531568B (en) 2014-10-22 2018-07-04 Toshiba Res Europe Limited An optical device and method of fabricating an optical device
GB2535197B (en) 2015-02-12 2019-11-06 Toshiba Res Europe Limited An optical device and a method of fabricating an optical device

Also Published As

Publication number Publication date
US20200279972A1 (en) 2020-09-03
US11152535B2 (en) 2021-10-19
KR20190116299A (ko) 2019-10-14
WO2018146096A1 (en) 2018-08-16
EP3361516B1 (en) 2019-12-18
EP3361516A1 (en) 2018-08-15
KR102461670B1 (ko) 2022-10-31
JP7212621B2 (ja) 2023-01-25
JP2020506556A (ja) 2020-02-27

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