JP7212439B2 - 超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 - Google Patents

超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 Download PDF

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JP7212439B2
JP7212439B2 JP2020526133A JP2020526133A JP7212439B2 JP 7212439 B2 JP7212439 B2 JP 7212439B2 JP 2020526133 A JP2020526133 A JP 2020526133A JP 2020526133 A JP2020526133 A JP 2020526133A JP 7212439 B2 JP7212439 B2 JP 7212439B2
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superconducting
layer
coupler
substrate
trench
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JP2021504936A (ja
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トパログ、ラジット、オヌール
ローゼンブラット、サミー
ハーツバーグ、ジャレッド、バーニー
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International Business Machines Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/195—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using superconductive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/805—Constructional details for Josephson-effect devices
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/20—Models of quantum computing, e.g. quantum circuits or universal quantum computers
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
    • G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/216—Through-semiconductor vias, e.g. TSVs characterised by dielectric material at least partially filling the via holes, e.g. covering the through-semiconductor vias in the via holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4484—Superconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Mathematical Analysis (AREA)
  • Mathematical Optimization (AREA)
  • Pure & Applied Mathematics (AREA)
  • Evolutionary Computation (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computational Mathematics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2020526133A 2017-11-27 2018-10-19 超電導部分ｔｓｖを用いたトランスモン・キュービット用の後面結合 Active JP7212439B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/822,338 2017-11-27
US15/822,338 US10446736B2 (en) 2017-11-27 2017-11-27 Backside coupling with superconducting partial TSV for transmon qubits
PCT/EP2018/078707 WO2019101448A1 (en) 2017-11-27 2018-10-19 Backside coupling with superconducting partial tsv for transmon qubits

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JP2021504936A JP2021504936A (ja) 2021-02-15
JP2021504936A5 JP2021504936A5 (https=) 2021-03-25
JP7212439B2 true JP7212439B2 (ja) 2023-01-25

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US (3) US10446736B2 (https=)
EP (1) EP3707647B1 (https=)
JP (1) JP7212439B2 (https=)
CN (1) CN111295678B (https=)
ES (1) ES2896013T3 (https=)
WO (1) WO2019101448A1 (https=)

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US10446736B2 (en) * 2017-11-27 2019-10-15 International Business Machines Corporation Backside coupling with superconducting partial TSV for transmon qubits
US10811588B2 (en) * 2018-08-06 2020-10-20 International Business Machines Corporation Vertical dispersive readout of qubits of a lattice surface code architecture
US11088310B2 (en) * 2019-04-29 2021-08-10 International Business Machines Corporation Through-silicon-via fabrication in planar quantum devices
US11699091B2 (en) 2020-03-02 2023-07-11 Massachusetts Institute Of Technology Qubit circuits with deep, in-substrate components
US11289638B2 (en) * 2020-06-22 2022-03-29 International Business Machines Corporation Superconducting qubit lifetime and coherence improvement via backside etching
US11152707B1 (en) * 2020-07-02 2021-10-19 International Business Machines Corporation Fast radio frequency package
EP4002227B1 (en) * 2020-11-23 2026-01-07 IQM Finland Oy Three-dimensional superconducting qubit and a method for manufacturing the same
US12033981B2 (en) 2020-12-16 2024-07-09 International Business Machines Corporation Create a protected layer for interconnects and devices in a packaged quantum structure
WO2022143809A1 (zh) * 2020-12-31 2022-07-07 合肥本源量子计算科技有限责任公司 超导量子芯片结构以及超导量子芯片制备方法
EP4053865B1 (en) 2021-03-02 2024-04-24 Imec VZW Trench capacitor device for a superconducting electronic circuit, superconducting qubit device and method for forming a trench capacitor device for a qubit device
US11621387B2 (en) * 2021-03-11 2023-04-04 International Business Machines Corporation Quantum device with low surface losses
CN117063188A (zh) * 2021-04-28 2023-11-14 Iqm芬兰公司 用于量子位的光学驱动器
US12532670B2 (en) 2021-12-08 2026-01-20 International Business Machines Corporation Vertical transmon structure and its fabrication process
CN115697029B (zh) * 2022-12-30 2023-06-20 量子科技长三角产业创新中心 一种超导量子芯片及其制备方法
JP2026030901A (ja) 2024-08-09 2026-02-24 富士通株式会社 量子デバイスの製造方法及び量子デバイス

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ES2896013T3 (es) 2022-02-23
JP2021504936A (ja) 2021-02-15
CN111295678A (zh) 2020-06-16
CN111295678B (zh) 2023-07-28
US10529908B2 (en) 2020-01-07
US20190165237A1 (en) 2019-05-30
WO2019101448A1 (en) 2019-05-31
US10446736B2 (en) 2019-10-15
EP3707647A1 (en) 2020-09-16
US20190181325A1 (en) 2019-06-13
US10804454B2 (en) 2020-10-13
US20200052181A1 (en) 2020-02-13
EP3707647B1 (en) 2021-09-29

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