JP7201364B2 - マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成 - Google Patents
マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成 Download PDFInfo
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- JP7201364B2 JP7201364B2 JP2018155191A JP2018155191A JP7201364B2 JP 7201364 B2 JP7201364 B2 JP 7201364B2 JP 2018155191 A JP2018155191 A JP 2018155191A JP 2018155191 A JP2018155191 A JP 2018155191A JP 7201364 B2 JP7201364 B2 JP 7201364B2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17187922.4 | 2017-08-25 | ||
| EP17187922 | 2017-08-25 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019075543A JP2019075543A (ja) | 2019-05-16 |
| JP2019075543A5 JP2019075543A5 (enExample) | 2021-09-16 |
| JP7201364B2 true JP7201364B2 (ja) | 2023-01-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018155191A Active JP7201364B2 (ja) | 2017-08-25 | 2018-08-22 | マルチビーム描画装置において露光される露光パターンにおける線量関連の特徴再形成 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3460824B1 (enExample) |
| JP (1) | JP7201364B2 (enExample) |
| KR (1) | KR102645978B1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| KR102835338B1 (ko) * | 2019-05-03 | 2025-07-17 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정 |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| KR20210099516A (ko) * | 2020-02-03 | 2021-08-12 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티―빔 라이터의 블러 변화 보정 |
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| CN113050386B (zh) * | 2021-03-19 | 2024-07-16 | 京东方科技集团股份有限公司 | 数字曝光方法、电子元器件基板及其制备方法 |
| EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
| CN115236952B (zh) | 2022-09-23 | 2022-11-29 | 深圳市先地图像科技有限公司 | 一种激光成像用的图像数据处理方法、系统及相关设备 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063546A (ja) | 2002-07-25 | 2004-02-26 | Nikon Corp | 電子ビーム露光方法 |
| JP2007242824A (ja) | 2006-03-08 | 2007-09-20 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム |
| JP2010267725A (ja) | 2009-05-13 | 2010-11-25 | Nuflare Technology Inc | 荷電粒子ビーム描画方法 |
| JP2012527764A (ja) | 2009-05-20 | 2012-11-08 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | リソグラフ処理のための２レベルパターンを発生する方法およびその方法を使用するパターン発生器 |
| JP2016174152A (ja) | 2015-03-17 | 2016-09-29 | アイエムエス ナノファブリケーション アーゲー | 限界寸法が緩和されたパターンエリアのマルチビーム描画 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393987A (en) * | 1993-05-28 | 1995-02-28 | Etec Systems, Inc. | Dose modulation and pixel deflection for raster scan lithography |
| GB2399676B (en) | 2003-03-21 | 2006-02-22 | Ims Ionen Mikrofab Syst | Apparatus for enhancing the lifetime of stencil masks |
| GB2414111B (en) | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| ATE527678T1 (de) | 2008-11-17 | 2011-10-15 | Ims Nanofabrication Ag | Verfahren zur maskenlosen teilchenstrahlbelichtung |
| US8198601B2 (en) | 2009-01-28 | 2012-06-12 | Ims Nanofabrication Ag | Method for producing a multi-beam deflector array device having electrodes |
| FR2959026B1 (fr) * | 2010-04-15 | 2012-06-01 | Commissariat Energie Atomique | Procede de lithographie a optimisation combinee de l'energie rayonnee et de la geometrie de dessin |
| EP2830083B1 (en) | 2013-07-25 | 2016-05-04 | IMS Nanofabrication AG | Method for charged-particle multi-beam exposure |
| EP2913838B1 (en) | 2014-02-28 | 2018-09-19 | IMS Nanofabrication GmbH | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
| EP3358599B1 (en) | 2014-05-30 | 2021-01-27 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using row calibration |
| EP3037878B1 (en) * | 2014-12-23 | 2020-09-09 | Aselta Nanographics | Method of applying vertex based corrections to a semiconductor design |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
-
2018
- 2018-08-22 JP JP2018155191A patent/JP7201364B2/ja active Active
- 2018-08-23 EP EP18190410.3A patent/EP3460824B1/en active Active
- 2018-08-24 KR KR1020180099200A patent/KR102645978B1/ko active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004063546A (ja) | 2002-07-25 | 2004-02-26 | Nikon Corp | 電子ビーム露光方法 |
| JP2007242824A (ja) | 2006-03-08 | 2007-09-20 | Nuflare Technology Inc | 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム |
| JP2010267725A (ja) | 2009-05-13 | 2010-11-25 | Nuflare Technology Inc | 荷電粒子ビーム描画方法 |
| JP2012527764A (ja) | 2009-05-20 | 2012-11-08 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | リソグラフ処理のための２レベルパターンを発生する方法およびその方法を使用するパターン発生器 |
| JP2016174152A (ja) | 2015-03-17 | 2016-09-29 | アイエムエス ナノファブリケーション アーゲー | 限界寸法が緩和されたパターンエリアのマルチビーム描画 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3460824A1 (en) | 2019-03-27 |
| KR102645978B1 (ko) | 2024-03-12 |
| EP3460824B1 (en) | 2020-08-12 |
| KR20190022402A (ko) | 2019-03-06 |
| JP2019075543A (ja) | 2019-05-16 |
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