KR102645978B1 - 멀티빔 기록 장치에서 노광되는 노광 패턴에서의 선량관련 피처 재형성 - Google Patents
멀티빔 기록 장치에서 노광되는 노광 패턴에서의 선량관련 피처 재형성 Download PDFInfo
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- KR102645978B1 KR102645978B1 KR1020180099200A KR20180099200A KR102645978B1 KR 102645978 B1 KR102645978 B1 KR 102645978B1 KR 1020180099200 A KR1020180099200 A KR 1020180099200A KR 20180099200 A KR20180099200 A KR 20180099200A KR 102645978 B1 KR102645978 B1 KR 102645978B1
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- 238000000034 method Methods 0.000 claims abstract description 91
- 239000002245 particle Substances 0.000 claims abstract description 32
- 230000008569 process Effects 0.000 claims description 21
- 238000002407 reforming Methods 0.000 claims description 12
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 6
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000011161 development Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 238000012886 linear function Methods 0.000 claims description 2
- 230000006870 function Effects 0.000 description 25
- 239000000758 substrate Substances 0.000 description 25
- 238000012937 correction Methods 0.000 description 22
- 230000000694 effects Effects 0.000 description 20
- 230000008859 change Effects 0.000 description 19
- 238000001459 lithography Methods 0.000 description 16
- 230000009467 reduction Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000033001 locomotion Effects 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 238000012545 processing Methods 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000009977 dual effect Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000010339 dilation Effects 0.000 description 5
- 230000009021 linear effect Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 238000013139 quantization Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004422 calculation algorithm Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 230000005405 multipole Effects 0.000 description 3
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005421 electrostatic potential Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101100125299 Agrobacterium rhizogenes aux2 gene Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 206010057362 Underdose Diseases 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011960 computer-aided design Methods 0.000 description 1
- 238000013144 data compression Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004980 dosimetry Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 238000000671 immersion lithography Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP17187922.4 | 2017-08-25 | ||
| EP17187922 | 2017-08-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20190022402A KR20190022402A (ko) | 2019-03-06 |
| KR102645978B1 true KR102645978B1 (ko) | 2024-03-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020180099200A Active KR102645978B1 (ko) | 2017-08-25 | 2018-08-24 | 멀티빔 기록 장치에서 노광되는 노광 패턴에서의 선량관련 피처 재형성 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3460824B1 (enExample) |
| JP (1) | JP7201364B2 (enExample) |
| KR (1) | KR102645978B1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11569064B2 (en) | 2017-09-18 | 2023-01-31 | Ims Nanofabrication Gmbh | Method for irradiating a target using restricted placement grids |
| KR102835338B1 (ko) * | 2019-05-03 | 2025-07-17 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정 |
| US11099482B2 (en) | 2019-05-03 | 2021-08-24 | Ims Nanofabrication Gmbh | Adapting the duration of exposure slots in multi-beam writers |
| KR20210099516A (ko) * | 2020-02-03 | 2021-08-12 | 아이엠에스 나노패브릭케이션 게엠베하 | 멀티―빔 라이터의 블러 변화 보정 |
| KR20210132599A (ko) | 2020-04-24 | 2021-11-04 | 아이엠에스 나노패브릭케이션 게엠베하 | 대전 입자 소스 |
| CN113050386B (zh) * | 2021-03-19 | 2024-07-16 | 京东方科技集团股份有限公司 | 数字曝光方法、电子元器件基板及其制备方法 |
| EP4095882A1 (en) | 2021-05-25 | 2022-11-30 | IMS Nanofabrication GmbH | Pattern data processing for programmable direct-write apparatus |
| US12154756B2 (en) | 2021-08-12 | 2024-11-26 | Ims Nanofabrication Gmbh | Beam pattern device having beam absorber structure |
| CN115236952B (zh) | 2022-09-23 | 2022-11-29 | 深圳市先地图像科技有限公司 | 一种激光成像用的图像数据处理方法、系统及相关设备 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010267725A (ja) * | 2009-05-13 | 2010-11-25 | Nuflare Technology Inc | 荷電粒子ビーム描画方法 |
| US20130201468A1 (en) | 2010-04-15 | 2013-08-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Lithography method with combined optimization of radiated energy and design geometry |
| EP3037878A1 (en) | 2014-12-23 | 2016-06-29 | Aselta Nanographics | Method of applying vertex based corrections to a semiconductor design |
| JP2016174152A (ja) * | 2015-03-17 | 2016-09-29 | アイエムエス ナノファブリケーション アーゲー | 限界寸法が緩和されたパターンエリアのマルチビーム描画 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5393987A (en) * | 1993-05-28 | 1995-02-28 | Etec Systems, Inc. | Dose modulation and pixel deflection for raster scan lithography |
| JP2004063546A (ja) | 2002-07-25 | 2004-02-26 | Nikon Corp | 電子ビーム露光方法 |
| GB2399676B (en) | 2003-03-21 | 2006-02-22 | Ims Ionen Mikrofab Syst | Apparatus for enhancing the lifetime of stencil masks |
| GB2414111B (en) | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| JP4745089B2 (ja) | 2006-03-08 | 2011-08-10 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画方法、描画データ作成方法及びプログラム |
| ATE527678T1 (de) | 2008-11-17 | 2011-10-15 | Ims Nanofabrication Ag | Verfahren zur maskenlosen teilchenstrahlbelichtung |
| US8198601B2 (en) | 2009-01-28 | 2012-06-12 | Ims Nanofabrication Ag | Method for producing a multi-beam deflector array device having electrodes |
| EP2433294B1 (en) | 2009-05-20 | 2016-07-27 | Mapper Lithography IP B.V. | Method of generating a two-level pattern for lithographic processing and pattern generator using the same |
| EP2830083B1 (en) | 2013-07-25 | 2016-05-04 | IMS Nanofabrication AG | Method for charged-particle multi-beam exposure |
| EP2913838B1 (en) | 2014-02-28 | 2018-09-19 | IMS Nanofabrication GmbH | Compensation of defective beamlets in a charged-particle multi-beam exposure tool |
| EP3358599B1 (en) | 2014-05-30 | 2021-01-27 | IMS Nanofabrication GmbH | Compensation of dose inhomogeneity using row calibration |
| US9653263B2 (en) | 2015-03-17 | 2017-05-16 | Ims Nanofabrication Ag | Multi-beam writing of pattern areas of relaxed critical dimension |
-
2018
- 2018-08-22 JP JP2018155191A patent/JP7201364B2/ja active Active
- 2018-08-23 EP EP18190410.3A patent/EP3460824B1/en active Active
- 2018-08-24 KR KR1020180099200A patent/KR102645978B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010267725A (ja) * | 2009-05-13 | 2010-11-25 | Nuflare Technology Inc | 荷電粒子ビーム描画方法 |
| US20130201468A1 (en) | 2010-04-15 | 2013-08-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Lithography method with combined optimization of radiated energy and design geometry |
| EP3037878A1 (en) | 2014-12-23 | 2016-06-29 | Aselta Nanographics | Method of applying vertex based corrections to a semiconductor design |
| JP2016174152A (ja) * | 2015-03-17 | 2016-09-29 | アイエムエス ナノファブリケーション アーゲー | 限界寸法が緩和されたパターンエリアのマルチビーム描画 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3460824A1 (en) | 2019-03-27 |
| JP7201364B2 (ja) | 2023-01-10 |
| EP3460824B1 (en) | 2020-08-12 |
| KR20190022402A (ko) | 2019-03-06 |
| JP2019075543A (ja) | 2019-05-16 |
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