JP7176283B2 - multilayer electronic components - Google Patents

Description

One aspect of the present invention relates to laminated electronic components.

Patent Literature 1 discloses an electronic component including an element body configured by laminating a plurality of insulating layers, and a bottom electrode provided on the bottom surface of the element body. In this electronic component, a warp prevention conductor is provided in the vicinity of the upper surface of the element. As a result, the shrinkage rate of the top surface of the element approaches the shrinkage rate of the bottom surface, so warping of the element is suppressed.

JP 2012-49694 A

When the electronic component described above is mounted on a substrate and used, a stress corresponding to a change in environmental temperature or the like acts on the bottom electrode due to the difference in coefficient of thermal expansion between the electronic component and the substrate. As a result, cracks may occur in the vicinity of the bottom electrode in the element.

One aspect of the present invention provides a laminated electronic component capable of suppressing the occurrence of cracks in a base body.

A multilayer electronic component according to one aspect of the present invention includes: a first main surface serving as a mounting surface; a second main surface facing the first main surface; a base body having a first main surface and side surfaces adjacent to the second main surface; a first electrode provided on the first main surface so as to be spaced apart from the side surfaces; a second electrode provided in the base body, a connection conductor connected to the first electrode and the second electrode, and a conductive resin layer having a first resin portion and a second resin portion that are continuous with each other; , the first resin portion is provided on the first main surface and covers the first electrode, and the second resin portion is provided on the side surface.

In this multilayer electronic component, the first electrode provided on the first main surface serving as the mounting surface is covered with the conductive resin layer. This relieves the stress acting on the first electrode. The conductive resin layer has not only the first resin portion provided on the first main surface, but also the second resin portion provided on the side surface and continuous with the first resin portion. Therefore, the stress acting on the first electrode is further relaxed. As a result, it is possible to suppress the occurrence of cracks in the element.

The second resin portion may be spaced apart from the second main surface. In this case, the second resin portion can be arranged in a region of the side surface that is close to the first main surface on which the first electrode is provided. Therefore, it is possible to effectively relax the stress acting on the first electrode.

The second resin portion may be arranged in a recess provided on the side surface. In this case, it is possible to suppress an increase in the outer dimensions of the multilayer electronic component.

The multilayer electronic component according to one aspect of the present invention may further include a conductive adhesion layer provided between the first electrode and the conductive resin layer and in contact with the first electrode and the conductive resin layer. . In this case, the adhesion between the first electrode and the conductive resin layer can be enhanced.

According to one aspect of the present invention, there is provided a multilayer electronic component capable of suppressing the occurrence of cracks in a base body.

1 is a circuit diagram showing a circuit configuration of a directional coupler according to an embodiment; FIG. 2 is a perspective view of the directional coupler shown in FIG. 1; FIG. 2 is a partial cross-sectional view of the directional coupler shown in FIG. 1; FIG. 2 is a perspective view showing an internal configuration of the directional coupler shown in FIG. 1; FIG. 2 is a perspective view showing an internal configuration of the directional coupler shown in FIG. 1; FIG. 2 is an explanatory view showing one surface of first to fourth dielectric layers in the element body of the directional coupler shown in FIG. 1; FIG. 2 is an explanatory view showing one surface of fifth to eighth dielectric layers in the element body of the directional coupler shown in FIG. 1; FIG. 2 is an explanatory view showing one surface of a ninth to twelfth dielectric layer in the element body of the directional coupler shown in FIG. 1; FIG. 3 is an explanatory view showing one surface of a 13th to 16th dielectric layer in the element body of the directional coupler shown in FIG. 1; FIG. It is a partial cross-sectional view of a directional coupler according to a modification.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. In the description, the same reference numerals are used for the same elements or elements having the same function, and overlapping descriptions are omitted.

FIG. 1 is a circuit diagram showing the circuit configuration of a directional coupler according to an embodiment. As shown in FIG. 1, the directional coupler 1 according to the embodiment includes a first port 11, a second port 12, a third port 13, and a fourth port . In this embodiment, among others, the first port 11 is an input port, the second port 12 is an output port, the third port 13 is a coupling port, and the fourth port 14 is a termination port. The fourth port 14 is grounded via a terminating resistor having a resistance of 50Ω, for example.

The directional coupler 1 further includes a main line 10 , a first sub-line section 20A, a second sub-line section 20B, and a phase shifter 30 . The main line 10 connects the first port 11 and the second port 12 . The first sub-line portion 20A and the second sub-line portion 20B are composed of lines that are electromagnetically coupled to the main line 10, respectively. The first sub line section 20A, the phase shifter 30, and the second sub line section 20B are provided in series between the third port 13 and the fourth port 14 in this order in terms of circuit configuration.

The first sub-line portion 20A has a first end portion 20A1 and a second end portion 20A2 located opposite to each other. The second sub-line portion 20B has a first end portion 20B1 and a second end portion 20B2 positioned opposite to each other. A first end portion 20A1 of the first sub line portion 20A is connected to the third port 13 . A first end portion 20B1 of the second sub line portion 20B is connected to the fourth port 14 .

Phase shifter 30 includes a first path 31 and a second path 32 . The first path 31 connects the first sub-line portion 20A and the second sub-line portion 20B. The first path 31 includes a first inductance element L1 and a second inductance element L2. The first inductance element L1 and the second inductance element L2 each have an inductance and are inductively coupled to each other. The first inductance element L1 has a first end L1a and a second end L1b located opposite to each other. The second inductance element L2 has a first end L2a and a second end L2b located opposite to each other.

A first end portion L1a of the first inductance element L1 is connected to a second end portion 20A2 of the first sub-line portion 20A. A first end portion L2a of the second inductance element L2 is connected to a second end portion 20B2 of the second sub-line portion 20B. The second end L1b of the first inductance element L1 and the second end L2b of the second inductance element L2 are connected to each other and to the ground via the second path 32 . A second path 32 includes a first capacitor C1.

In this embodiment, the first inductance element L1 and the second inductance element L2 are each lines, but they may be inductors that are lumped constant elements. The first inductance element L1 is the first line, and the second inductance element L2 is the second line. The first line and the second line are at least inductively coupled. The first line and the second line are further capacitively coupled such that the capacitance between the first line and the second line is continuously distributed along the first and second lines, like a distributed constant circuit. good too.

The first line may include a first line portion and the second line may include a second line portion facing the first line portion. The first line portion has a first edge closest to the first sub-line portion 20A and a second edge on the opposite side in terms of circuit configuration. The second line portion has a first edge closest to the second sub-line portion 20B and a second edge on the opposite side in terms of circuit configuration. The first edge of the second line section is physically closest to the second edge of the first line section of the first line section. The second edge of the second line section is physically closest to the first edge of the first line section of the first line section. The first line portion and the second line portion will be described in more detail later.

The main line 10 has a first portion 10A electromagnetically coupled with the first sub-line portion 20A and a second portion 10B electromagnetically coupled with the second sub-line portion 20B. Here, the first portion 10A and the first sub-line portion 20A are collectively referred to as a first coupling portion 40A. Also, the second portion 10B and the second sub-line portion 20B are collectively referred to as a second coupling portion 40B.

Next, the action of the directional coupler 1 will be described. A high-frequency signal is input to the first port 11 and output from the second port 12 . A combined signal having power corresponding to the power of the high-frequency signal input to the first port 11 is output from the third port 13 .

Between the first port 11 and the third port 13, a first signal path via the first coupling section 40A and a second signal path via the second coupling section 40B and the phase shifter 30 are formed. be. When a high-frequency signal is input to the first port 11, the combined signal output from the third port 13 is a signal obtained by synthesizing the signals that have passed through the first and second signal paths. The degree of coupling of the directional coupler 1 depends on the degrees of individual coupling of the first coupling section 40A and the second coupling section 40B and the phase relationship of the signals that have passed through the first signal path and the second signal path, respectively. do.

Between the second port 12 and the third port 13, a third signal path via the first coupling section 40A and a fourth signal path via the second coupling section 40B and the phase shifter 30 are formed. be. The isolation of the directional coupler 1 depends on the degree of coupling of each of the first coupling section 40A and the second coupling section 40B and the phase relationship of the signals that have passed through the third and fourth signal paths, respectively. .

The phase shifter 30 outputs a signal whose phase is delayed with respect to the input signal. The phase delay amount of the output signal of phase shifter 30 with respect to the input signal of phase shifter 30 increases as the frequency of the input signal increases. The frequency twice the frequency of the input signal when the phase delay amount is 90 degrees is lower than the frequency of the input signal when the phase delay amount is 180 degrees. The characteristics of this phase shifter 30 will be described in more detail later.

Next, the structure of the directional coupler 1 will be explained. 2 is a perspective view of the directional coupler shown in FIG. 1. FIG. 3 is a partial cross-sectional view of the directional coupler shown in FIG. 1. FIG. As shown in FIGS. 2 and 3, the directional coupler 1 includes a base body 50, bottom electrodes 111 to 116, and a plurality of covering electrodes 120. As shown in FIGS.

The element body 50 is formed by laminating a plurality of dielectric layers, as will be described later. The element body 50 has a rectangular parallelepiped shape. The rectangular parallelepiped shape includes a rectangular parallelepiped shape with chamfered corners and edges, and a rectangular parallelepiped shape with rounded corners and edges. The element body 50 has, as its outer surfaces, a top surface 50A, a bottom surface 50B serving as a mounting surface, and four side surfaces 50C, 50D, 50E, and 50F. The top surface 50A and the bottom surface 50B face each other. Sides 50C and 50D face each other. Sides 50E and 50F face each other. The side surfaces 50C to 50F extend in the facing direction T of the top surface 50A and the bottom surface 50B and are adjacent to the top surface 50A and the bottom surface 50B. In the element body 50, the top surface 50A and the bottom surface 50B are located at both ends in the facing direction T. As shown in FIG.

Recesses 70 are provided in the edges of the side surfaces 50C, 50D, 50E, and 50F on the side of the bottom surface 50B. The recessed portion 70 is a stepped portion provided at the edges of the side surfaces 50C, 50D, 50E, and 50F on the side of the bottom surface 50B. When viewed from the bottom surface 50B side, the recess 70 extends like a groove along the peripheral edge 50G of the bottom surface 50B and surrounds the bottom surface 50B. The perimeter 50G is the top of the curvature of the ridge between the bottom surface 50B and the side surfaces 50C-50F. When viewed from the bottom surface 50B side, the peripheral edge of the directional coupler 1 defined by the side surfaces 50C, 50D, 50E, and 50F is located outside the peripheral edge 50G along the peripheral edge 50G.

The width of the concave portion 70 (the length of the concave portion 70 in the opposing direction T) is, for example, 80 μm or more and 150 μm or less. The depth of the recess 70 (the length of the recess 70 in the direction perpendicular to the side surfaces 50C to 50F) is, for example, 20 μm or more and 80 μm or less. The bottom surface 70A of the recess 70 is adjacent to the bottom surface 50B. The bottom surface 70A and the bottom surface 50B are continuous with each other. As a method for forming the concave portion 70, for example, when obtaining the directional coupler 1 from the laminate substrate by dicing, after half-cutting the laminate substrate with a dicing blade having a wide blade width, the laminate is cut with a dicing blade having a narrow blade width. A method of fully cutting the substrate can be mentioned.

The bottom electrodes 111-116 are provided on the bottom surface 50B so as to be separated from the side surfaces 50C-50F. The bottom electrodes 111 to 116 have a rectangular shape when viewed from the facing direction T. As shown in FIG. The bottom electrodes 111 to 116 have the same shape. In this embodiment, the surfaces of the bottom electrodes 111 to 116 are flush with the bottom surface 50B, but the surfaces of the bottom electrodes 111 to 116 may protrude outward from the bottom surface 50B, or may protrude further than the bottom surface 50B. It may be recessed inward.

The bottom electrode 111 corresponds to the first port 11 (see FIG. 1). The bottom electrode 112 corresponds to the second port 12 (see FIG. 1). The bottom electrode 113 corresponds to the third port 13 (see FIG. 1). The bottom electrode 114 corresponds to the fourth port 14 (see FIG. 1). Bottom electrodes 115 and 116 are ground terminals connected to the ground.

Each covered electrode 120 is spaced apart from each other. Each covering electrode 120 is continuously provided on a portion of the bottom surface 50B and a portion of the side surface 50C or the side surface 50D, and covers any one of the bottom surface electrodes 111-116. Each covering electrode 120 is spaced from top surface 50A, side surface 50E, and side surface 50F. The top surface 50A, the side surface 50E, and the side surface 50F are exposed from each covered electrode 120. As shown in FIG. Although FIG. 3 shows a cross-sectional view of the covering electrode 120 covering the bottom electrode 111, each covering electrode 120 has the same configuration.

Each covered electrode 120 has a conductive resin layer 140, a first plating layer (not shown), and a second plating layer (not shown). The conductive resin layer 140 is provided on the element body 50 . The conductive resin layer 140 is continuously provided on a portion of the bottom surface 50B and a portion of the side surface 50C or the side surface 50D, and covers any one of the bottom electrodes 111-116.

The conductive resin layer 140 is formed by curing the conductive resin applied on the element body 50 . The conductive resin includes resin (eg, thermosetting resin), conductive material (eg, metal powder), and organic solvent. Ag, for example, is used as the conductive material. As the thermosetting resin, for example, phenol resin, acrylic resin, silicone resin, epoxy resin, or polyimide resin is used. The conductive resin is applied, for example, by screen printing. Screen printing is performed on the bottom surface 50B, for example. Since the conductive resin flows from the bottom surface 50B to the side surfaces 50C and 50D, the conductive resin is also applied to the side surfaces 50C and 50D.

The conductive resin layer 140 has a first resin portion 141 and a second resin portion 142 that are continuous with each other. The first resin portion 141 is provided on the bottom surface 50B and covers any one of the bottom electrodes 111-116. The first resin portion 141 is provided with a substantially constant thickness along the bottom surface 50B. The thickness of the first resin portion 141 is defined by the length of the first resin portion 141 in the direction perpendicular to the surface of the first resin portion 141 on the first plating layer side. The thickness of the first resin portion 141 is, for example, 20 μm or more and 40 μm or less.

The second resin portion 142 is provided on the side surface 50C or the side surface 50D. The second resin portion 142 is arranged in a recess 70 provided on the side surface 50C or the side surface 50D. The thickness of the second resin portion 142 is thicker than the thickness of the first resin portion 141 . The thickness of the second resin portion 142 is defined by the length of the second resin portion 142 in the direction perpendicular to the surface of the second resin portion 142 on the side of the first plating layer. The maximum thickness of the second resin portion 142 is, for example, 20 μm or more and 80 μm or less.

The first plating layer is provided on the conductive resin layer 140 so as to cover the entire conductive resin layer 140 . The first plating layer is provided with a substantially constant thickness along the conductive resin layer 140 . The first plated layer is, for example, a Ni plated layer formed by Ni plating. The first plating layer may be a Sn plating layer, a Cu plating layer, or an Au plating layer.

The second plating layer is provided on the first plating layer so as to cover the entire first plating layer. The second plating layer is provided with a substantially constant thickness along the first plating layer. The second plating layer is a Sn plating layer formed by Sn plating, for example. The second plating layer may be a Cu plating layer or an Au plating layer.

Next, the internal configuration of the directional coupler will be described. The element body 50 has 16 laminated dielectric layers. Hereinafter, these 16 dielectric layers are referred to as first to sixteenth dielectric layers in order from the bottom. The first dielectric layer 51 includes a bottom surface 50B. The sixteenth dielectric layer 51 includes an upper surface 50A.

4 and 5 are perspective views showing the internal configuration of the directional coupler shown in FIG. 1. FIG. As shown in FIGS. 4 and 5, the directional coupler 1 includes internal electrodes 521, 522, 524, 525, 541, 551, 552, 571, 591, 601, 611, 621 provided in the element body 50. , 631, 641, 651 and connection conductors 51T1, 51T2, 51T3, 51T4, 51T5, 51T6, 52T1, 52T2, 52T3, 52T4, 52T5, 52T6, 53T1, 53T2, 53T3, 53T4, 53T5, 53T6, 54T1, 54T2, 54T3, 54T4, 54T5, 54T6, 55T3, 55T4, 55T5, 55T6, 56T3, 56T4, 56T5, 56T6, 57T3, 57T4, 57T5, 57T6, 58T3, 58T4, 58T5, 58T6, 59T3, 59T4, 59T5, 59T6, 60T3, 60T4, 60T5, 60T6, 60T7, 61T3, 61T4, 61T7, 62T3, 62T4, 62T7, 62T8, 63T3, 63T4, 63T7, 63T8, 64T4, 64T8.

Each internal electrode is a conductor layer formed on the pattern formation surface (main surface on the bottom surface 50B side) of the dielectric layer. Each internal electrode crosses the opposing direction T and is substantially parallel to the top surface 50A and the bottom surface 50B. Each connection conductor is formed in a through hole penetrating the dielectric layer in the facing direction T and extends along the facing direction T. As shown in FIG. Although illustration is omitted, a conductor layer for enhancing connectivity is disposed between a pair of connection conductors that are adjacent in the opposing direction T and connected to each other.

In FIG. 6, (a) to (d) respectively show the pattern formation surfaces of the first to fourth dielectric layers. In FIG. 7, (a) to (d) show pattern formation surfaces of the fifth to eighth dielectric layers, respectively. In FIG. 8, (a) to (d) show pattern formation surfaces of the 9th to 12th dielectric layers, respectively. In FIG. 9, (a) to (d) show the pattern formation surfaces of the 13th to 16th dielectric layers, respectively.

As shown in FIG. 6A, bottom electrodes 111 to 116 are formed on the pattern formation surface (that is, the bottom surface 50B) of the dielectric layer 51 of the first layer. The dielectric layer 51 also has connection conductors 51T1, 51T2, 51T3, 51T4, 51T5 and 51T6 connected to the bottom electrodes 111 to 116, respectively.

As shown in FIG. 6B, internal electrodes 521, 522, 524 and an internal electrode 525 for ground are formed on the pattern formation surface of the dielectric layer 52 of the second layer. Connection conductors 52T1, 52T2, 52T3, 52T4, 52T5, and 52T6 are formed on the dielectric layer 52 . The connection conductor 52T1 and the connection conductor 51T1 shown in FIG. The connection conductor 52T2 and the connection conductor 51T2 shown in FIG. The connection conductor 51T3 shown in FIG. 6A is connected to the connection conductor 52T3. The connection conductor 52T4 and the connection conductor 51T4 shown in FIG. The connection conductors 52T5 and 52T6 and the connection conductors 51T5 and 52T6 shown in FIG.

As shown in FIG. 6(c), connection conductors 53T1, 53T2, 53T3, 53T4, 53T5 and 53T6 are formed on the third dielectric layer 53. As shown in FIG. The connection conductors 52T1 to 52T6 shown in FIG. 6B are connected to the connection conductors 53T1 to 53T6, respectively.

As shown in FIG. 6D, internal electrodes 541 are formed on the pattern formation surface of the fourth dielectric layer 54 . In addition, connection conductors 54T1, 54T2, 54T3, 54T4, 54T5, and 54T6 are formed on the dielectric layer . The connection conductors 53T1, 53T3 to 53T6 shown in FIG. 6C are connected to the connection conductors 54T1, 54T3 to 54T6, respectively. The connection conductor 54T2 is connected to the internal electrode 541 and the connection conductor 53T2 shown in FIG. 6(c).

As shown in FIG. 7A, on the pattern formation surface of the fifth dielectric layer 55, the internal electrode 551 used for forming the main line 10 and the second sub-line portion 20B are formed. An internal electrode 552 used for this purpose is formed. Each of the internal electrodes 551, 552 has a first end and a second end. Further, connection conductors 55T3, 55T4, 55T5, and 55T6 are formed on the dielectric layer 55. As shown in FIG. The connection conductors 54T3, 54T5 and 54T6 shown in FIG. 6D are connected to the connection conductors 55T3, 55T5 and 55T6, respectively. The connection conductor 55T4 is connected to a portion of the internal electrode 552 near the first end. The connection conductor 54T1 shown in FIG. 6D is connected to a portion of the internal electrode 551 near the first end. The connection conductor 54T2 shown in FIG. 6D is connected to a portion of the internal electrode 551 near the second end. The connection conductor 54T4 shown in FIG. 6D is connected to a portion of the internal electrode 552 near the second end.

As shown in FIG. 7B, connection conductors 56T3, 56T4, 56T5, and 56T6 are formed on the sixth dielectric layer 56 . The connection conductors 55T3 to 55T6 shown in FIG. 7A are connected to the connection conductors 56T3 to 56T6, respectively.

As shown in FIG. 7C, internal electrodes 571 used to form the first sub-line portion 20A are formed on the pattern formation surface of the seventh dielectric layer 57. As shown in FIG. The internal electrode 571 has a first end and a second end. Further, connection conductors 57T3, 57T4, 57T5, and 57T6 are formed on the dielectric layer 57. As shown in FIG. The connection conductor 57T3 is connected to a portion of the internal electrode 571 near the first end. The connection conductors 56T4, 56T5 and 56T6 shown in FIG. 7B are connected to the connection conductors 57T4, 57T5 and 57T6, respectively. The connection conductor 56T3 shown in FIG. 7B is connected to a portion of the internal electrode 571 near the second end.

As shown in FIG. 7D, connection conductors 58T3, 58T4, 58T5, and 58T6 are formed on the eighth dielectric layer 58 . The connection conductors 57T3 to 57T6 shown in FIG. 7C are connected to the connection conductors 58T3 to 58T6, respectively.

As shown in FIG. 8A, an internal electrode 591 for grounding is formed on the pattern formation surface of the ninth dielectric layer 59 . Further, connection conductors 59T3, 59T4, 59T5 and 59T6 are formed on the dielectric layer 59. As shown in FIG. The connection conductors 59T3 and 59T4 are connected to the connection conductors 58T3 and 58T4 shown in FIG. 7(d), respectively. The connection conductors 59T5 and 59T6 and the connection conductors 58T5 and 58T6 shown in FIG.

As shown in FIG. 8(b), an internal electrode 601 used to form the first capacitor C1 is formed on the pattern formation surface of the tenth dielectric layer 60. As shown in FIG. Connection conductors 60T3, 60T4, 60T5, 60T6, and 60T7 are formed on the dielectric layer 60. As shown in FIG. The connection conductors 59T3 to 59T6 shown in FIG. 8A are connected to the connection conductors 60T3 to 60T6, respectively. The connection conductor 60T7 is connected to the internal electrode 601 .

As shown in FIG. 8C, an internal electrode 611 for grounding is formed on the pattern formation surface of the eleventh dielectric layer 61 . In addition, connection conductors 61T3, 61T4, and 61T7 are formed on the dielectric layer 61. As shown in FIG. The connection conductors 60T3, 60T4 and 60T7 shown in FIG. 8B are connected to the connection conductors 61T3, 61T4 and 61T7, respectively. The connection conductors 60T5 and 60T6 shown in FIG. 8B are connected to the internal electrodes 611. As shown in FIG.

As shown in FIG. 8D, internal electrodes 621 are formed on the pattern formation surface of the 12th dielectric layer 62 . Connection conductors 62T3, 62T4, 62T7 and 62T8 are formed on the dielectric layer 62. As shown in FIG. The connection conductors 61T3 and 61T4 shown in FIG. 8C are connected to the connection conductors 62T3 and 62T4, respectively. The connection conductors 62T7 and 62T8 and the connection conductor 61T7 shown in FIG.

As shown in FIG. 9A, an internal electrode 631 is formed on the pattern formation surface of the 13th dielectric layer 63 . Connection conductors 63T3, 63T4, 63T7 and 63T8 are formed on the dielectric layer 63. As shown in FIG. The connection conductors 62T3, 62T7 and 62T8 shown in FIG. 8D are connected to the connection conductors 63T3, 63T7 and 63T8, respectively. A connection conductor 63T4 and a connection conductor 62T4 shown in FIG.

As shown in FIG. 9B, internal electrodes 641 used to form the first inductance element L1 are formed on the pattern formation surface of the fourteenth dielectric layer 64 . The internal electrode 641 has a first end and a second end. Further, connection conductors 64T4 and 64T8 are formed on the dielectric layer 64. As shown in FIG. The connection conductors 63T4 and 63T8 shown in FIG. 9A are connected to the connection conductors 64T4 and 64T8, respectively. The connection conductor 63T3 shown in FIG. 9A is connected to a portion of the internal electrode 641 near the first end. The connection conductor 63T7 shown in FIG. 9A is connected to a portion of the internal electrode 641 near the second end.

As shown in FIG. 9(c), the internal electrode 651 used to form the second inductance element L2 is formed on the pattern formation surface of the fifteenth dielectric layer 65. As shown in FIG. The internal electrode 651 has a first end and a second end. The connection conductor 64T4 shown in FIG. 9B is connected to a portion of the internal electrode 651 near the first end. The connection conductor 64T8 shown in FIG. 9B is connected to a portion of the internal electrode 651 near the second end.

As shown in FIG. 9D, marks 661 are formed on the pattern formation surface of the sixteenth dielectric layer 66 .

In the element body 50 shown in FIG. 3, the first to sixteenth dielectric layers 51 to 66 are laminated such that the pattern formation surface of the first dielectric layer 51 is the bottom surface 50B of the element body 50. configured.

FIG. 4 shows the inside of the base body 50 viewed from the side 50C. FIG. 5 shows the inside of the base body 50 viewed from the side 50E side.

The correspondence between the circuit components of the directional coupler 1 shown in FIG. 1 and the internal components of the element body 50 shown in FIGS. 6 to 9 will be described below. The main line 10 is composed of the internal electrodes 551 shown in FIG. 7(a). A portion of the internal electrode 551 near the first end is connected to the bottom electrode 111 via the connection conductor 51T1, the internal electrode 521, and the connection conductors 52T1, 53T1, and 54T1. A portion of the internal electrode 551 near the second end is connected to the bottom electrode 112 via the connection conductor 51T2, the internal electrode 522, and the connection conductors 52T2, 53T2, and 54T2.

A portion of the internal electrode 571 shown in FIG. 7C faces a portion of the internal electrode 551 via the dielectric layers 55 and 56 . The first sub-line portion 20A is configured by part of the internal electrode 571 described above. A portion of the internal electrode 571 near the second end is connected to the bottom electrode 113 via a connection conductor 51T3 and connection conductors 52T3, 53T3, 54T3, 55T3, and 56T3.

A portion of the internal electrode 552 shown in FIG. 7A faces a portion of the internal electrode 551 . The second sub line portion 20B is configured by part of the internal electrode 552 described above. A portion of the internal electrode 552 near the second end is connected to the bottom electrode 114 via the connection conductor 51T4, the internal electrode 524, and the connection conductors 52T4, 53T4, and 54T4.

The first inductance element L1 is composed of the internal electrode 641 shown in FIG. 9(b). A portion of the internal electrode 641 near the first end is connected to the internal electrode 571 forming the first sub-line portion 20A via connection conductors 57T3, 58T3, 59T3, 60T3, 61T3, 62T3, and 63T3. A connection point between the internal electrode 641 and the connection conductor 63T3 corresponds to the first end L1a of the first inductance element L1. A connection point between the internal electrode 641 and the connection conductor 63T7 corresponds to the second end L1b of the first inductance element L1.

The second inductance element L2 is composed of the internal electrode 651 shown in FIG. 9(c). A portion near the first end of the internal electrode 651 connects the second sub line portion 20B via the connection conductors 55T4, 56T4, 57T4, 58T4, 59T4, 60T4, 61T4 and 62T4, the internal electrode 631 and the connection conductors 63T4 and 64T4. It is connected to the constituent internal electrode 552 . A connection point between the internal electrode 651 and the connection conductor 64T4 corresponds to the first end L2a of the second inductance element L2. A connection point between the internal electrode 651 and the connection conductor 64T8 corresponds to the second end L2b of the second inductance element L2.

The first capacitor C1 includes the internal electrodes 591, 601, 611 shown in FIGS. 8A to 8C, the dielectric layer 59 between the internal electrodes 591, 601, and the dielectric body layer 60 . The internal electrodes 591, 611 are connected conductors 51T5, 51T6, internal electrode 525, connection conductors 52T5, 52T6, 53T5, 53T6, 54T5, 54T6, 55T5, 55T6, 56T5, 56T6, 57T5, 57T6, 58T5, 58T6, 59T5, 59T6 , 60T5 and 60T6 to bottom electrodes 115 and 116, respectively. The internal electrode 601 is connected to the internal electrode 621 shown in FIG. 8(d) through connection conductors 60T7 and 61T7. The internal electrode 621 is connected to an internal electrode 641 that constitutes the first inductance element L1 via connection conductors 62T7 and 63T7. Also, the internal electrode 621 is connected to an internal electrode 651 that constitutes the second inductance element L2 via connection conductors 62T8, 63T8, and 64T8.

Structural features of the directional coupler 1 including the element body 50 will be described below. In the element body 50, the internal electrode 641 forming the first inductance element L1, the internal electrode 651 forming the second inductance element L2, the internal electrodes 591, 601, 611 forming the first capacitor C1, and the dielectric layer 59 , 60 are closer to the upper surface 50A than the internal electrode 551 forming the main line 10, the internal electrode 571 forming the first sub-line portion 20A, and the internal electrode 552 forming the second sub-line portion 20B. . Therefore, the phase shifter 30 is located closer to the upper surface 50A than the main line 10 and the first and second sub line portions 20A and 20B.

Further, the internal electrode 641 forming the first inductance element L1 and the internal electrode 651 forming the second inductance element L2 are connected to the internal electrodes 591, 601, 611 and the dielectric layers 59, 60 forming the first capacitor C1. In comparison, it is closer to the upper surface 50A.

An internal electrode 591 for grounding is interposed between the internal electrodes 641 and 651 and the internal electrode 551 forming the main line 10 . Therefore, the first inductance element L1 and the second inductance element L2 are not electromagnetically coupled with the main line 10 .

As described above, in the directional coupler 1, the first inductance element L1 is the first line and the second inductance element L2 is the second line. The first line is composed of the internal electrode 641 shown in FIG. 9(b). The second line is composed of the internal electrode 651 shown in FIG. 9(c).

The first line includes a first line portion 31A. In FIG. 9B, the first line portion 31A is hatched. The first line portion 31A has a first edge 31Aa closest to the first sub-line portion 20A and a second edge 31Ab on the opposite side in terms of circuit configuration. The first edge 31Aa is positioned near the first end L1a of the first inductance element L1. The second edge 31Ab is positioned near the second end L1b of the first inductance element L1.

The second line includes a second line portion 31B facing the first line portion 31A. In FIG. 9(c), the second line portion 31B is hatched. The second line portion 31B has a first edge 31Ba closest to the second sub-line portion 20B and a second edge 31Bb on the opposite side in terms of circuit configuration. The first edge 31Ba is positioned near the first end L2a of the second inductance element L2. The second edge 31Bb is positioned near the second end L2b of the second inductance element L2.

As shown in FIGS. 9B and 9C, the first edge 31Ba of the second line portion 31B is physically closest to the second edge 31Ab of the first line portion 31A. The second edge 31Bb of the second line portion 31B is physically closest to the first edge 31Aa of the first line portion 31A.

As described above, in the directional coupler 1, the bottom electrodes 111 to 116 provided on the bottom surface 50B serving as the mounting surface are covered with the conductive resin layer 140. FIG. This relieves the stress acting on the bottom electrodes 111-116. Since the conductive resin layer 140 is soft due to the inclusion of the resin, the stress can be effectively relieved. The conductive resin layer 140 has not only a first resin portion 141 provided on the bottom surface 50B, but also second resin portions 142 provided on the side surfaces 50C to 50F and continuous with the first resin portion 141. FIG. Therefore, the stress acting on the bottom electrodes 111 to 116 is further relaxed. As a result, the occurrence of cracks in the element body 50 can be suppressed.

The second resin portion 142 is separated from the upper surface 2A. Therefore, the second resin portion 142 can be arranged in a region near the bottom surface 50B on which the bottom electrodes 111 to 116 are provided, of the side surfaces 50C and 50D. Therefore, the stress acting on the bottom electrodes 111 to 116 can be effectively relaxed.

The second resin portion 142 is arranged in recesses 70 provided on the side surfaces 50C and 50D. Therefore, compared to the case where the second resin portion 142 is arranged outside the recess 70 , it is possible to suppress an increase in the external dimensions of the directional coupler 1 .

The bottom electrodes 111-116 are provided on the bottom surface 50B so as to be separated from the side surfaces 50C-50F. Therefore, for example, when obtaining the directional coupler 1 from the laminate substrate by dicing, the dicing blade does not cover the bottom electrodes 111 to 116, and the bottom electrodes 111 to 116 are easily cut.

The present invention is not necessarily limited to the above-described embodiments, and various modifications are possible without departing from the scope of the invention.

FIG. 10 is a partial cross-sectional view of a directional coupler according to a modification. As shown in FIG. 10, the directional coupler 1A according to the modification differs from the directional coupler 1 shown in FIG. The conductive adhesion layer 130 is provided between the bottom electrodes 111 to 116 (see FIG. 2) and the conductive resin layer 140 . The conductive adhesion layer 130 is in contact with the bottom electrodes 111 to 116 (see FIG. 2) and the conductive resin layer 140 . A conductive adhesion layer 130 is provided on the element body 50 . The conductive adhesion layer 130 is continuously provided on a portion of the bottom surface 50B and a portion of the side surface 50C or the side surface 50D (see FIG. 2), covering any one of the bottom electrodes 111-116. The conductive adhesion layer 130 is provided along the surface of the base body 50 with a substantially constant thickness.

The conductive adhesion layer 130 is formed, for example, by baking a conductive paste applied to the outer surface of the element body 50 . The conductive adhesion layer 130 is a sintered metal layer formed by sintering the metal component (metal powder) contained in the conductive paste. Ag, Au, Cu, Ag/Pd alloy, for example, is used as the metal component. A conductive paste contains, for example, a metal component, a glass component, an organic binder, and an organic solvent. The conductive adhesion layer 130 is a metal layer for improving the adhesion of the conductive resin layer 140 to the element body 50 and the bottom electrodes 111-116.

The conductive paste is applied, for example, by screen printing. Screen printing is performed on the bottom surface 50B, for example. Since the conductive paste flows from the bottom surface 50B to the side surfaces 50C and 50D, the conductive paste is also applied to the side surfaces 50C and 50D. In the directional coupler 1A, the conductive resin layer 140 is provided on the conductive adhesion layer 130 so as to cover the conductive adhesion layer 130 entirely. In the directional coupler 1</b>A, the electrical conductivity of the conductive resin layer 140 is lower than the electrical conductivity of the conductive adhesion layer 130 . The conductive resin layer 140 is softer than the conductive adhesion layer 130 .

In the directional coupler 1A, the adhesion between the bottom electrodes 111 to 116 and the conductive resin layer 140 can be enhanced by further including such a conductive adhesion layer 130. FIG. Therefore, peeling of the covered electrode 120 can be suppressed. By providing the conductive adhesion layer 130, the volume of the cover electrode 120 is increased, so that the effect of suppressing the stress acting on the bottom electrodes 111 to 116 is improved.

In the above embodiments, the directional coupler 1 was described as an example of a multilayer electronic component, but the present invention is not limited to this, and can be applied to multilayer electronic components such as diplexers, capacitors, inductors, varistors, or thermistors. may

In the above-described embodiment, each covered electrode 120 is provided continuously with a part of the bottom surface 50B and a part of the side surface 50C or the side surface 50D. morphology) is not limited to this. For example, each covered electrode 120 may be continuously provided on a portion of the bottom surface 50B and a portion of the side surface 50E or the side surface 50D. The second resin portion 142 of the conductive resin layer 140 may be provided on part of the side surface 50E or the side surface 50D.

In the above-described embodiment, each covered electrode 120 is separated from the upper surface 50A, but each covered electrode 120 may not be separated from the upper surface 50A. The second resin portion 142 of the conductive resin layer 140 may, for example, be provided up to the edges of the side surfaces 50C to 50F on the side of the upper surface 50A and be in contact with the upper surface 50A, or may be provided continuously to the upper surface 50A. good. In this case, since the volume of the conductive resin layer 140 is increased, the effect of suppressing the stress acting on the bottom electrodes 111 to 116 is improved.

In the above-described embodiment, the recess 70 extends along the peripheral edge 50G of the bottom surface 50B and surrounds the bottom surface 50B. may be provided only in

DESCRIPTION OF SYMBOLS 1, 1A... Directional coupler, 50... Base body, 50A... Top surface (second main surface), 50B... Bottom surface (first main surface), 50C, 50D, 50E, 50F... Side surface, 70... Concave part, 111, 112, 113, 114, 115, 116... bottom electrode (first electrode), 130... conductive adhesion layer, 140... conductive resin layer, 141... first resin portion, 142... second resin portion, 521, 522, 524, 525, 541, 551, 552, 571, 591, 601, 611, 621, 631, 641, 651... Internal electrodes (second electrodes), 51T1, 51T2, 51T3, 51T4, 51T5, 51T6, 52T1, 52T2, 52T3, 52T4, 52T5, 52T6, 53T1, 53T2, 53T3, 53T4, 53T5, 53T6, 54T1, 54T2, 54T3, 54T4, 54T5, 54T6, 55T3, 55T4, 55T5, 55T6, 56T3, 56T4, 56T5, 56T6, 57T3, 57T4, 57T5, 57T6, 58T3, 58T4, 58T5, 58T6, 59T3, 59T4, 59T5, 59T6, 60T3, 60T4, 60T5, 60T6, 60T7, 61T3, 61T4, 61T7, 62T3, 62T4, 62T7, 62T8, 63T3, 63T4, 63T7, 63T8, 64T4, 64T8... connection conductors, T... opposite direction.

Claims (3)

a first main surface serving as a mounting surface; a second main surface facing the first main surface; a body having a side surface adjacent to the second main surface;
a first electrode provided on the first main surface so as to be spaced apart from the side surface;
a second electrode provided in the element body;
a connection conductor provided in the element body and connected to the first electrode and the second electrode;
a conductive resin layer having a first resin portion and a second resin portion that are continuous with each other;
The first resin portion is provided on the first main surface and covers the first electrode,
The laminated electronic component, wherein the second resin portion is arranged in a concave portion provided on the side surface. 2. The multilayer electronic component according to claim 1, wherein said second resin portion is separated from said second main surface. 3. The multilayer electronic device according to claim 1 , further comprising a conductive adhesive layer provided between said first electrode and said conductive resin layer and in contact with said first electrode and said conductive resin layer. parts.

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