JP7173745B2 - 半導体システム - Google Patents
半導体システム Download PDFInfo
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- JP7173745B2 JP7173745B2 JP2018068472A JP2018068472A JP7173745B2 JP 7173745 B2 JP7173745 B2 JP 7173745B2 JP 2018068472 A JP2018068472 A JP 2018068472A JP 2018068472 A JP2018068472 A JP 2018068472A JP 7173745 B2 JP7173745 B2 JP 7173745B2
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- oscillation
- capacitive element
- capacitive
- crystal oscillator
- inverter
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 230000010355 oscillation Effects 0.000 claims description 138
- 239000013078 crystal Substances 0.000 claims description 86
- 230000008859 change Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000003990 capacitor Substances 0.000 description 11
- 230000007423 decrease Effects 0.000 description 7
- 230000003111 delayed effect Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
- H03B5/366—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device and comprising means for varying the frequency by a variable voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L5/00—Automatic control of voltage, current, or power
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5705—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis
- G01C19/5712—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using masses driven in reciprocating rotary motion about an axis the devices involving a micromechanical structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/003—Circuit elements of oscillators
- H03B2200/005—Circuit elements of oscillators including measures to switch a capacitor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0082—Lowering the supply voltage and saving power
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/006—Functional aspects of oscillators
- H03B2200/0094—Measures to ensure starting of oscillations
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/03—Varying beside the frequency also another parameter of the oscillator in dependence on the frequency
- H03B2201/031—Varying beside the frequency also another parameter of the oscillator in dependence on the frequency the parameter being the amplitude of a signal, e.g. maintaining a constant output amplitude over the frequency range
Description
CL=Cg×Cd/(Cg+Cd) ・・・(1)
-RL=-gm/(2πf)2×Cg×Cd ・・・(3)
gm=ΔIout/ΔVin ・・・(3)
-RL≧Re ・・・(4)
10 半導体装置
12 制御部
20 水晶振動子
22 帰還抵抗素子
24 インバータ素子
25 電流源
26、28、32、34 発振容量素子
30、36 スイッチング素子
IBn 駆動電流
St 制御信号
XT インバータ素子24の入力
XTX インバータ素子24の出力
Claims (6)
- 半導体装置と、
制御部と、
を備え、
前記半導体装置は、
水晶振動子と、
前記水晶振動子の一端と他端との間に接続された抵抗素子と、
前記抵抗素子の一端に入力が接続され、前記抵抗素子の他端に出力が接続され、インバータ素子、及び前記インバータ素子に駆動電流を供給する電流源を含む電流調整型インバータ素子と、
前記インバータ素子の入力に一端が接続され、他端が接地された第1容量素子と、
一端が接地された第2容量素子と、
前記第1容量素子の一端と、前記第2容量素子の他端と、の接続状態を切り替える第1スイッチング素子と、
前記インバータ素子の出力に一端が接続され、他端が接地された第3容量素子と、
一端が接地された第4容量素子と、
前記第3容量素子の一端と、前記第4容量素子の他端と、の接続状態を切り替える第2スイッチング素子と、
を備え、
前記制御部は、前記半導体装置の発振の開始の際に、前記電流源から供給される電流量の調整と、前記第1スイッチング素子及び前記第2スイッチング素子の動作の制御を行い、
前記水晶振動子による発振を開始させる際に、
前記電流源が供給する前記駆動電流を増加させ、
前記第1スイッチング素子は、前記第1容量素子の一端と、前記第2容量素子の他端とを接続し、
前記第2スイッチング素子は、前記第3容量素子の一端と、前記第4容量素子の他端とを接続する、
半導体システム。 - 前記水晶振動子による発振が安定した場合、
前記第1スイッチング素子は、前記第1容量素子の一端と、前記第2容量素子の他端とを非接続とし、
前記第2スイッチング素子は、前記第3容量素子の一端と、前記第4容量素子の他端とを非接続とする、
請求項1に記載の半導体システム。 - 前記水晶振動子による発振が開始してから所定時間経過した場合、
前記第1スイッチング素子は、前記第1容量素子の一端と、前記第2容量素子の他端とを非接続とし、
前記第2スイッチング素子は、前記第3容量素子の一端と、前記第4容量素子の他端とを非接続とする、
請求項1に記載の半導体システム。 - 前記インバータ素子の駆動電流の変化に応じて、
前記第1スイッチング素子は、前記第1容量素子の一端と、前記第2容量素子の他端との接続状態を切り替え、
前記第2スイッチング素子は、前記第3容量素子の一端と、前記第4容量素子の他端との接続状態を切り替える、
請求項1に記載の半導体システム。 - 前記インバータ素子の駆動電流が予め定められた電流量より少なくなった場合、
前記第1スイッチング素子は、前記第1容量素子の一端と、前記第2容量素子の他端とを非接続とし、
前記第2スイッチング素子は、前記第3容量素子の一端と、前記第4容量素子の他端とを非接続とする、
請求項4に記載の半導体システム。 - 前記第1スイッチング素子及び第2スイッチング素子は、制御信号に応じて動作する、
請求項1から請求項5のいずれか1項に記載の半導体システム。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018068472A JP7173745B2 (ja) | 2018-03-30 | 2018-03-30 | 半導体システム |
CN201910212533.9A CN110324006B (zh) | 2018-03-30 | 2019-03-20 | 半导体装置以及半导体系统 |
US16/367,441 US10958215B2 (en) | 2018-03-30 | 2019-03-28 | Semiconductor device and semiconductor system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018068472A JP7173745B2 (ja) | 2018-03-30 | 2018-03-30 | 半導体システム |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019180028A JP2019180028A (ja) | 2019-10-17 |
JP2019180028A5 JP2019180028A5 (ja) | 2021-07-26 |
JP7173745B2 true JP7173745B2 (ja) | 2022-11-16 |
Family
ID=68055618
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018068472A Active JP7173745B2 (ja) | 2018-03-30 | 2018-03-30 | 半導体システム |
Country Status (3)
Country | Link |
---|---|
US (1) | US10958215B2 (ja) |
JP (1) | JP7173745B2 (ja) |
CN (1) | CN110324006B (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005094147A (ja) | 2003-09-12 | 2005-04-07 | Seiko Instruments Inc | 発振回路 |
JP2008136032A (ja) | 2006-11-29 | 2008-06-12 | Epson Toyocom Corp | 圧電発振回路 |
US20090096541A1 (en) | 2007-10-11 | 2009-04-16 | Tran Daniel N | Crystal oscillator circuit having fast start-up and method therefor |
JP2009105611A (ja) | 2007-10-23 | 2009-05-14 | Panasonic Corp | 発振回路及び発振器 |
JP2014030141A (ja) | 2012-07-31 | 2014-02-13 | Renesas Electronics Corp | 半導体装置及びその制御方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56160106A (en) * | 1980-05-14 | 1981-12-09 | Nec Corp | Oscillating circuit |
US6329884B1 (en) * | 1997-10-30 | 2001-12-11 | Nippon Precision Circuits, Inc. | Oscillator circuit with current limiting devices |
US6559730B1 (en) * | 2000-07-05 | 2003-05-06 | Cts Corporation | Electronic switch with static control voltage for dynamically switching capacitance in a frequency-adjustable crystal oscillator |
JP2003168926A (ja) * | 2001-11-29 | 2003-06-13 | Nippon Dempa Kogyo Co Ltd | 電圧制御圧電発振器 |
JP2008147815A (ja) | 2006-12-07 | 2008-06-26 | Sanyo Electric Co Ltd | 発振回路 |
JP2008205656A (ja) * | 2007-02-17 | 2008-09-04 | Seiko Instruments Inc | 発振回路 |
JP2012186784A (ja) * | 2010-12-24 | 2012-09-27 | Renesas Electronics Corp | 水晶発振装置および半導体装置 |
-
2018
- 2018-03-30 JP JP2018068472A patent/JP7173745B2/ja active Active
-
2019
- 2019-03-20 CN CN201910212533.9A patent/CN110324006B/zh active Active
- 2019-03-28 US US16/367,441 patent/US10958215B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005094147A (ja) | 2003-09-12 | 2005-04-07 | Seiko Instruments Inc | 発振回路 |
JP2008136032A (ja) | 2006-11-29 | 2008-06-12 | Epson Toyocom Corp | 圧電発振回路 |
US20090096541A1 (en) | 2007-10-11 | 2009-04-16 | Tran Daniel N | Crystal oscillator circuit having fast start-up and method therefor |
JP2009105611A (ja) | 2007-10-23 | 2009-05-14 | Panasonic Corp | 発振回路及び発振器 |
JP2014030141A (ja) | 2012-07-31 | 2014-02-13 | Renesas Electronics Corp | 半導体装置及びその制御方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2019180028A (ja) | 2019-10-17 |
CN110324006B (zh) | 2023-11-03 |
US10958215B2 (en) | 2021-03-23 |
CN110324006A (zh) | 2019-10-11 |
US20190305727A1 (en) | 2019-10-03 |
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