JP7173614B2 - 磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ - Google Patents

磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ Download PDF

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Publication number
JP7173614B2
JP7173614B2 JP2020509823A JP2020509823A JP7173614B2 JP 7173614 B2 JP7173614 B2 JP 7173614B2 JP 2020509823 A JP2020509823 A JP 2020509823A JP 2020509823 A JP2020509823 A JP 2020509823A JP 7173614 B2 JP7173614 B2 JP 7173614B2
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layer
magnetic
tunnel junction
protective layer
magnetic tunnel
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JPWO2019188203A5 (https=
JPWO2019188203A1 (ja
Inventor
浩一 西岡
哲郎 遠藤
正二 池田
弘明 本庄
英夫 佐藤
貞彦 三浦
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Tohoku University NUC
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Tohoku University NUC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F41/308—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices lift-off processes, e.g. ion milling, for trimming or patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2020509823A 2018-03-30 2019-03-11 磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ Active JP7173614B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018070254 2018-03-30
JP2018070254 2018-03-30
PCT/JP2019/009734 WO2019188203A1 (ja) 2018-03-30 2019-03-11 磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ

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JPWO2019188203A1 JPWO2019188203A1 (ja) 2021-04-08
JPWO2019188203A5 JPWO2019188203A5 (https=) 2022-03-15
JP7173614B2 true JP7173614B2 (ja) 2022-11-16

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US (1) US11963458B2 (https=)
JP (1) JP7173614B2 (https=)
WO (1) WO2019188203A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114641868B (zh) * 2019-10-31 2026-03-17 国立大学法人东北大学 隧道结层叠膜、磁存储元件和磁存储器
KR102931786B1 (ko) * 2020-07-28 2026-02-25 삼성전자주식회사 자기 메모리 소자

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034153A (ja) 2008-07-25 2010-02-12 Toshiba Corp 磁気ランダムアクセスメモリおよびその書き込み方法
JP2013115399A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2015179694A (ja) 2014-03-18 2015-10-08 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ
WO2016139878A1 (ja) 2015-03-05 2016-09-09 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド、及び電子機器
JP2016178301A (ja) 2015-03-20 2016-10-06 エイチジーエスティーネザーランドビーブイ 垂直磁気異方性の強化のための二重ＭｇＯ界面およびＣｏＦｅＢ層を有する垂直スピントランスファートルク（ＳＴＴ）メモリセル
US20160351799A1 (en) 2015-05-30 2016-12-01 Applied Materials, Inc. Hard mask for patterning magnetic tunnel junctions
JP2017183560A (ja) 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8722543B2 (en) * 2010-07-30 2014-05-13 Headway Technologies, Inc. Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices
US9245608B2 (en) * 2011-09-22 2016-01-26 Qualcomm Incorporated Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device
JP2013140891A (ja) 2012-01-05 2013-07-18 Toshiba Corp 磁気抵抗効果素子の製造方法
US9620706B2 (en) * 2014-12-02 2017-04-11 Qualcomm Incorporated Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
US11245069B2 (en) * 2015-07-14 2022-02-08 Applied Materials, Inc. Methods for forming structures with desired crystallinity for MRAM applications
JP6806375B2 (ja) * 2015-11-18 2021-01-06 国立大学法人東北大学 磁気トンネル接合素子及び磁気メモリ
US10586579B2 (en) * 2018-03-20 2020-03-10 Regents Of The University Of Minnesota Electric field switchable magnetic devices

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010034153A (ja) 2008-07-25 2010-02-12 Toshiba Corp 磁気ランダムアクセスメモリおよびその書き込み方法
JP2013115399A (ja) 2011-12-01 2013-06-10 Sony Corp 記憶素子、記憶装置
JP2015179694A (ja) 2014-03-18 2015-10-08 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ
WO2016139878A1 (ja) 2015-03-05 2016-09-09 ソニー株式会社 記憶素子、記憶装置、磁気ヘッド、及び電子機器
JP2016178301A (ja) 2015-03-20 2016-10-06 エイチジーエスティーネザーランドビーブイ 垂直磁気異方性の強化のための二重ＭｇＯ界面およびＣｏＦｅＢ層を有する垂直スピントランスファートルク（ＳＴＴ）メモリセル
US20160351799A1 (en) 2015-05-30 2016-12-01 Applied Materials, Inc. Hard mask for patterning magnetic tunnel junctions
JP2017183560A (ja) 2016-03-31 2017-10-05 ソニー株式会社 メモリ素子、及びメモリ素子の製造方法

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US20210057641A1 (en) 2021-02-25
US11963458B2 (en) 2024-04-16
WO2019188203A1 (ja) 2019-10-03
JPWO2019188203A1 (ja) 2021-04-08

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