JPWO2019188203A5 - - Google Patents
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- Publication number
- JPWO2019188203A5 JPWO2019188203A5 JP2020509823A JP2020509823A JPWO2019188203A5 JP WO2019188203 A5 JPWO2019188203 A5 JP WO2019188203A5 JP 2020509823 A JP2020509823 A JP 2020509823A JP 2020509823 A JP2020509823 A JP 2020509823A JP WO2019188203 A5 JPWO2019188203 A5 JP WO2019188203A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetic
- protective layer
- tunnel junction
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 94
- 230000005291 magnetic effect Effects 0.000 claims 40
- 239000011241 protective layer Substances 0.000 claims 34
- 230000004888 barrier function Effects 0.000 claims 16
- 238000003780 insertion Methods 0.000 claims 16
- 230000037431 insertion Effects 0.000 claims 16
- 238000005530 etching Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 8
- 229910052742 iron Inorganic materials 0.000 claims 8
- 230000005415 magnetization Effects 0.000 claims 8
- 239000007769 metal material Substances 0.000 claims 8
- 229910052741 iridium Inorganic materials 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- 229910052750 molybdenum Inorganic materials 0.000 claims 6
- 229910052758 niobium Inorganic materials 0.000 claims 6
- 229910052707 ruthenium Inorganic materials 0.000 claims 6
- 229910052719 titanium Inorganic materials 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 6
- 229910003321 CoFe Inorganic materials 0.000 claims 4
- 229910019236 CoFeB Inorganic materials 0.000 claims 4
- 239000003302 ferromagnetic material Substances 0.000 claims 4
- 229910052735 hafnium Inorganic materials 0.000 claims 4
- 238000010884 ion-beam technique Methods 0.000 claims 4
- 238000010030 laminating Methods 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 2
- 238000001020 plasma etching Methods 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018070254 | 2018-03-30 | ||
| JP2018070254 | 2018-03-30 | ||
| PCT/JP2019/009734 WO2019188203A1 (ja) | 2018-03-30 | 2019-03-11 | 磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019188203A1 JPWO2019188203A1 (ja) | 2021-04-08 |
| JPWO2019188203A5 true JPWO2019188203A5 (https=) | 2022-03-15 |
| JP7173614B2 JP7173614B2 (ja) | 2022-11-16 |
Family
ID=68061594
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020509823A Active JP7173614B2 (ja) | 2018-03-30 | 2019-03-11 | 磁気トンネル接合素子、磁気トンネル接合素子の製造方法、及び、磁気メモリ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US11963458B2 (https=) |
| JP (1) | JP7173614B2 (https=) |
| WO (1) | WO2019188203A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114641868B (zh) * | 2019-10-31 | 2026-03-17 | 国立大学法人东北大学 | 隧道结层叠膜、磁存储元件和磁存储器 |
| KR102931786B1 (ko) * | 2020-07-28 | 2026-02-25 | 삼성전자주식회사 | 자기 메모리 소자 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010034153A (ja) | 2008-07-25 | 2010-02-12 | Toshiba Corp | 磁気ランダムアクセスメモリおよびその書き込み方法 |
| US8722543B2 (en) * | 2010-07-30 | 2014-05-13 | Headway Technologies, Inc. | Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices |
| US9245608B2 (en) * | 2011-09-22 | 2016-01-26 | Qualcomm Incorporated | Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device |
| JP2013115399A (ja) | 2011-12-01 | 2013-06-10 | Sony Corp | 記憶素子、記憶装置 |
| JP2013140891A (ja) | 2012-01-05 | 2013-07-18 | Toshiba Corp | 磁気抵抗効果素子の製造方法 |
| JP6139444B2 (ja) | 2014-03-18 | 2017-05-31 | 株式会社東芝 | 磁気抵抗効果素子、磁気抵抗効果素子の製造方法及び磁気メモリ |
| US9620706B2 (en) * | 2014-12-02 | 2017-04-11 | Qualcomm Incorporated | Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device |
| US10672420B2 (en) | 2015-03-05 | 2020-06-02 | Sony Corporation | Storage device, storage apparatus, magnetic head, and electronic apparatus |
| US9337415B1 (en) * | 2015-03-20 | 2016-05-10 | HGST Netherlands B.V. | Perpendicular spin transfer torque (STT) memory cell with double MgO interface and CoFeB layer for enhancement of perpendicular magnetic anisotropy |
| US20160351799A1 (en) | 2015-05-30 | 2016-12-01 | Applied Materials, Inc. | Hard mask for patterning magnetic tunnel junctions |
| US11245069B2 (en) * | 2015-07-14 | 2022-02-08 | Applied Materials, Inc. | Methods for forming structures with desired crystallinity for MRAM applications |
| JP6806375B2 (ja) * | 2015-11-18 | 2021-01-06 | 国立大学法人東北大学 | 磁気トンネル接合素子及び磁気メモリ |
| JP2017183560A (ja) | 2016-03-31 | 2017-10-05 | ソニー株式会社 | メモリ素子、及びメモリ素子の製造方法 |
| US10586579B2 (en) * | 2018-03-20 | 2020-03-10 | Regents Of The University Of Minnesota | Electric field switchable magnetic devices |
-
2019
- 2019-03-11 JP JP2020509823A patent/JP7173614B2/ja active Active
- 2019-03-11 WO PCT/JP2019/009734 patent/WO2019188203A1/ja not_active Ceased
- 2019-03-11 US US16/971,797 patent/US11963458B2/en active Active
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