JP7166471B2 - 半導体装置、電力変換装置、および半導体装置の製造方法 - Google Patents
半導体装置、電力変換装置、および半導体装置の製造方法 Download PDFInfo
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 238000010586 diagram Methods 0.000 description 23
- 239000011135 tin Substances 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
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- 239000010931 gold Substances 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 11
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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Description
本開示の実施の形態1における半導体装置の構成を説明する。図1は、本開示の実施の形態1における半導体装置を示す断面模式図である。また、図2は、本開示の実施の形態1における半導体装置を示す平面図である。なお、図2では封止樹脂やリードフレーム(電極板)に覆われた部分は実際には見えないが、説明のために隠れ線により封止樹脂やリードフレームを透過して表示している。
本開示の実施の形態2における半導体装置の構成を説明する。図8は、本開示の実施の形態2における半導体装置の一部を拡大した断面模式図である。図8(a)および図8(b)は、第一の円筒コイルばね41a1(弾性部材)およびその周辺を拡大した断面模式図である。
本開示の実施の形態3における半導体装置の構成を説明する。図9は、本開示の実施の形態3における接合部材による被膜が形成された弾性部材を示す模式図である。実施の形態3は、弾性部材である第一の円筒コイルばね41a1、第一の円錐コイルばね41b1、または第一の板ばね41cに、はんだ被膜32が形成されている構成が、実施の形態1と異なる。実施の形態3の半導体装置のその他の構成は、実施の形態1の半導体装置の構成と同一である。
本開示の実施の形態4は、上述した実施の形態1、2、3または後述される5における半導体装置を電力変換装置に適用したものである。本開示は特定の電力変換装置に限定されるものではないが、以下、本開示の実施の形態4として、三相のインバータに本開示を適用した場合について説明する。
本開示の実施の形態5における半導体装置の構成を説明する。図12は、本開示の実施の形態5における接合部材による被膜が形成された弾性部材を示す模式図である。
本実施の形態に係る半導体装置によれば、第三の円筒コイルばね45cは、はんだ被膜として構成されている。このため、弾性部材配置工程において、第三の円筒コイルばね45cがはんだ被膜として主電極21a、22a上に配置される。よって、板はんだを主電極21a、22aに配置する必要がない。したがって、板はんだを配置する工程を実施する必要がないため、半導体装置の製造コストを低減することができる。
Claims (12)
- 冷却板と、
裏面が前記冷却板に接合された基板と、
表面に電極が設けられ、裏面が前記基板の表面に接合された半導体素子と、
前記半導体素子の表面に対向するように配置された電極板と、前記半導体素子と前記電極板との間に設けられ、一端が前記電極に、他端が前記電極板に、それぞれ線接触または面接触された、弾性部材と、
前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ接合する、導電性の接合部材と、
を備え、
前記弾性部材の表面は、前記接合部材で覆われている、半導体装置。 - 前記弾性部材は、コイルばねまたは板ばねである請求項1に記載の半導体装置。
- 前記弾性部材の材料は、Al、Cuの少なくとも一つを含む請求項1または2に記載の半導体装置。
- 表面が前記接合部材で覆われた前記弾性部材は、芯材と、前記芯材の周囲を覆っている被覆部とを含み、
前記芯材は、前記被覆部よりも大きい弾性率を有する金属によって構成されており、
前記被覆部は、前記芯材よりも大きい導電率を有する金属を含む材料によって構成されている、請求項1または2に記載の半導体装置。 - 前記接合部材の材料は、Ni、Sn、Au、Ag、Cuの少なくとも一つを含む請求項1から4のいずれか1項に記載の半導体装置。
- 前記電極板は、前記弾性部材の他端に接触する位置に、前記弾性部材を保持する保持部を有する請求項1から5のいずれか1項に記載の半導体装置。
- 前記保持部として凸構造が設けられ、
前記凸構造に前記弾性部材が巻き付けられることで前記弾性部材が前記電極板に接合可能である、請求項6に記載の半導体装置。 - 前記保持部として凹構造が設けられ、
前記凹構造に前記弾性部材が差し込まれることで前記弾性部材が前記電極板に接合可能である、請求項6に記載の半導体装置。 - 前記弾性部材は、複数設けられた請求項1から8のいずれか1項に記載の半導体装置。
- 請求項1から9のいずれか1項に記載の半導体装置を有し、入力される電力を変換して出力する主変換回路と、
前記主変換回路を制御する制御信号を前記主変換回路に出力する制御回路と、
を備えた電力変換装置。 - 基板の表面に、導電性の第一の接合部材と表面に電極が設けられた半導体素子とを配置する半導体素子配置工程と、
前記第一の接合部材を加熱して、前記基板の表面と前記半導体素子の裏面とを接合する半導体素子接合工程と、
前記半導体素子の表面に、導電性の第二の接合部材、弾性力を有する導電性の弾性部材、および電極板を配置する弾性部材配置工程と、
前記第二の接合部材を加熱して、前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ線接触または面接触させて接合する弾性部材接合工程と、前記半導体素子と前記電極板とを封止する封止工程と、
前記基板の裏面と冷却板とを接合する冷却板接合工程と、
を含む半導体装置の製造方法。 - 基板の表面に、導電性の第一の接合部材と表面に電極が設けられた半導体素子とを配置する半導体素子配置工程と、
前記第一の接合部材を加熱して、前記基板の表面と前記半導体素子の裏面とを接合する半導体素子接合工程と、
前記半導体素子の表面に、弾性力を有する導電性の弾性部材に導電性の第二の接合部材による被膜が形成された接合被膜弾性部材、および電極板を配置する弾性部材配置工程と、前記接合被膜弾性部材を加熱して、前記電極と前記弾性部材の一端とを、前記電極板と前記弾性部材の他端とを、それぞれ線接触または面接触させて接合する弾性部材接合工程と、
前記半導体素子と前記電極板とを封止する封止工程と、
前記基板の裏面と冷却板とを接合する冷却板接合工程と、
を含む半導体装置の製造方法。
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