JP7165719B2 - 平坦性が向上された微細複製研磨表面 - Google Patents
平坦性が向上された微細複製研磨表面 Download PDFInfo
- Publication number
- JP7165719B2 JP7165719B2 JP2020505906A JP2020505906A JP7165719B2 JP 7165719 B2 JP7165719 B2 JP 7165719B2 JP 2020505906 A JP2020505906 A JP 2020505906A JP 2020505906 A JP2020505906 A JP 2020505906A JP 7165719 B2 JP7165719 B2 JP 7165719B2
- Authority
- JP
- Japan
- Prior art keywords
- offset
- polishing
- article
- polishing pad
- channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 claims description 277
- 239000000463 material Substances 0.000 claims description 97
- 239000000758 substrate Substances 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 35
- 239000012530 fluid Substances 0.000 claims description 34
- 238000006073 displacement reaction Methods 0.000 claims description 31
- 230000033001 locomotion Effects 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 8
- 230000010076 replication Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 91
- 239000000243 solution Substances 0.000 description 31
- 239000002131 composite material Substances 0.000 description 30
- 229920000642 polymer Polymers 0.000 description 29
- 239000002585 base Substances 0.000 description 27
- 230000007547 defect Effects 0.000 description 21
- 239000011148 porous material Substances 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000002245 particle Substances 0.000 description 17
- 239000000919 ceramic Substances 0.000 description 13
- 239000002002 slurry Substances 0.000 description 11
- 230000000875 corresponding effect Effects 0.000 description 10
- -1 polypropylene Polymers 0.000 description 10
- 230000003750 conditioning effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000011246 composite particle Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000008602 contraction Effects 0.000 description 5
- 238000004049 embossing Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 239000008139 complexing agent Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 3
- 238000005054 agglomeration Methods 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 230000002596 correlated effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000006260 foam Substances 0.000 description 3
- 239000003112 inhibitor Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000003945 anionic surfactant Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 239000002563 ionic surfactant Substances 0.000 description 2
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 239000006254 rheological additive Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000012756 surface treatment agent Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 239000002562 thickening agent Substances 0.000 description 2
- 239000012749 thinning agent Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000004831 Hot glue Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003139 biocide Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000007844 bleaching agent Substances 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 239000007859 condensation product Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000011222 crystalline ceramic Substances 0.000 description 1
- 229910002106 crystalline ceramic Inorganic materials 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/12—Lapping plates for working plane surfaces
- B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D2203/00—Tool surfaces formed with a pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2031/00—Other particular articles
- B29L2031/736—Grinding or polishing equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762541362P | 2017-08-04 | 2017-08-04 | |
| US62/541,362 | 2017-08-04 | ||
| PCT/IB2018/055815 WO2019026021A1 (en) | 2017-08-04 | 2018-08-02 | MICRO-REPLICATED POLISHING SURFACE WITH IMPROVED COPLANARITY |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020529332A JP2020529332A (ja) | 2020-10-08 |
| JP2020529332A5 JP2020529332A5 (enExample) | 2021-09-09 |
| JP7165719B2 true JP7165719B2 (ja) | 2022-11-04 |
Family
ID=65233633
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020505906A Active JP7165719B2 (ja) | 2017-08-04 | 2018-08-02 | 平坦性が向上された微細複製研磨表面 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12208483B2 (enExample) |
| JP (1) | JP7165719B2 (enExample) |
| KR (1) | KR102608124B1 (enExample) |
| CN (1) | CN111032284B (enExample) |
| TW (1) | TWI803502B (enExample) |
| WO (1) | WO2019026021A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11524385B2 (en) * | 2019-06-07 | 2022-12-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad with lobed protruding structures |
| CN114599482A (zh) * | 2019-11-04 | 2022-06-07 | 3M创新有限公司 | 抛光制品、抛光系统和抛光方法 |
| CN114630726A (zh) * | 2019-11-05 | 2022-06-14 | 3M创新有限公司 | 模制研磨旋转工具 |
| GB2595668B (en) * | 2020-06-02 | 2022-05-25 | Illinois Tool Works | A contact cleaning surface |
| JP7435436B2 (ja) * | 2020-12-24 | 2024-02-21 | 株式会社Sumco | キャリアプレートの研磨方法 |
| CN119927788B (zh) * | 2025-04-08 | 2025-08-01 | 河北同光半导体股份有限公司 | 晶圆的研磨抛光加工方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060178099A1 (en) | 2005-02-07 | 2006-08-10 | Inoac Corporation | Polishing pad |
| JP2013193181A (ja) | 2012-03-21 | 2013-09-30 | Fujibo Holdings Inc | 研磨パッド用シート及びその製造方法、研磨パッド及びその製造方法、並びに研磨方法 |
| WO2017062719A1 (en) | 2015-10-07 | 2017-04-13 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
| JP2017510470A (ja) | 2014-04-03 | 2017-04-13 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
Family Cites Families (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3211811A (en) | 1964-06-29 | 1965-10-12 | Armorlite Leus Company Inc | Method and apparatus for casting thermosetting plastic lenses |
| US5489233A (en) | 1994-04-08 | 1996-02-06 | Rodel, Inc. | Polishing pads and methods for their use |
| WO1996033839A1 (en) | 1995-04-26 | 1996-10-31 | Minnesota Mining And Manufacturing Company | Method and apparatus for step and repeat exposures |
| US5921855A (en) | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
| US6780095B1 (en) * | 1997-12-30 | 2004-08-24 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
| FR2786118B1 (fr) * | 1998-11-19 | 2000-12-22 | Lam Plan Sa | Dispositif de rodage ou polissage |
| JP2000158327A (ja) * | 1998-12-02 | 2000-06-13 | Rohm Co Ltd | 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置 |
| TW467802B (en) * | 1999-10-12 | 2001-12-11 | Hunatech Co Ltd | Conditioner for polishing pad and method for manufacturing the same |
| US6776699B2 (en) * | 2000-08-14 | 2004-08-17 | 3M Innovative Properties Company | Abrasive pad for CMP |
| US7160178B2 (en) | 2003-08-07 | 2007-01-09 | 3M Innovative Properties Company | In situ activation of a three-dimensional fixed abrasive article |
| US7048615B2 (en) | 2004-08-05 | 2006-05-23 | United Microelectronics Corp. | Pad backer and CMP process using the same |
| US7169029B2 (en) * | 2004-12-16 | 2007-01-30 | 3M Innovative Properties Company | Resilient structured sanding article |
| US20070128991A1 (en) * | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
| US7226345B1 (en) * | 2005-12-09 | 2007-06-05 | The Regents Of The University Of California | CMP pad with designed surface features |
| US7410413B2 (en) * | 2006-04-27 | 2008-08-12 | 3M Innovative Properties Company | Structured abrasive article and method of making and using the same |
| US7828634B2 (en) * | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
| WO2009032815A1 (en) | 2007-09-06 | 2009-03-12 | 3M Innovative Properties Company | Tool for making microstructured articles |
| US20100188751A1 (en) | 2009-01-29 | 2010-07-29 | 3M Innovative Properties Company | Optical films with internally conformable layers and method of making the films |
| US8425278B2 (en) * | 2009-08-26 | 2013-04-23 | 3M Innovative Properties Company | Structured abrasive article and method of using the same |
| CN102686362A (zh) * | 2009-12-30 | 2012-09-19 | 3M创新有限公司 | 包括分相共混聚合物的抛光垫及其制备和使用方法 |
| JP5516051B2 (ja) | 2010-05-13 | 2014-06-11 | 旭硝子株式会社 | 研磨パッドを用いた研磨装置及びガラス板の製造方法 |
| KR101161015B1 (ko) * | 2010-09-10 | 2012-07-02 | 신한다이아몬드공업 주식회사 | Cmp 패드 컨디셔너 및 그 제조방법 |
| WO2012102978A1 (en) | 2011-01-26 | 2012-08-02 | 3M Innovative Properties Company | Abrasive article with replicated microstructured backing and method of using same |
| CN103688343B (zh) * | 2011-03-07 | 2016-09-07 | 恩特格里公司 | 化学机械抛光垫修整器 |
| JP6188286B2 (ja) * | 2012-07-13 | 2017-08-30 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨パッド及びガラス、セラミックス、及び金属材料の研磨方法 |
| US9649742B2 (en) * | 2013-01-22 | 2017-05-16 | Nexplanar Corporation | Polishing pad having polishing surface with continuous protrusions |
| US10160092B2 (en) * | 2013-03-14 | 2018-12-25 | Cabot Microelectronics Corporation | Polishing pad having polishing surface with continuous protrusions having tapered sidewalls |
| EP3049215B1 (en) | 2013-09-25 | 2021-04-14 | 3M Innovative Properties Company | Composite ceramic abrasive polishing solution |
| KR102252673B1 (ko) | 2013-09-25 | 2021-05-18 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 다층화된 폴리싱 패드 |
| CN204277743U (zh) | 2014-10-29 | 2015-04-22 | 安阳方圆研磨材料有限责任公司 | 硬质抛光垫 |
| JP6789982B2 (ja) | 2015-05-13 | 2020-11-25 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨パッド、並びに当該研磨パッドを使用するためのシステム及び方法 |
-
2018
- 2018-08-02 WO PCT/IB2018/055815 patent/WO2019026021A1/en not_active Ceased
- 2018-08-02 JP JP2020505906A patent/JP7165719B2/ja active Active
- 2018-08-02 US US16/636,348 patent/US12208483B2/en active Active
- 2018-08-02 CN CN201880050836.9A patent/CN111032284B/zh active Active
- 2018-08-02 KR KR1020207004255A patent/KR102608124B1/ko active Active
- 2018-08-03 TW TW107127051A patent/TWI803502B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060178099A1 (en) | 2005-02-07 | 2006-08-10 | Inoac Corporation | Polishing pad |
| JP2013193181A (ja) | 2012-03-21 | 2013-09-30 | Fujibo Holdings Inc | 研磨パッド用シート及びその製造方法、研磨パッド及びその製造方法、並びに研磨方法 |
| JP2017510470A (ja) | 2014-04-03 | 2017-04-13 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨パッド及びシステム、並びにその作製方法及び使用方法 |
| WO2017062719A1 (en) | 2015-10-07 | 2017-04-13 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019026021A1 (en) | 2019-02-07 |
| TW201910056A (zh) | 2019-03-16 |
| TWI803502B (zh) | 2023-06-01 |
| KR102608124B1 (ko) | 2023-11-29 |
| US20200164484A1 (en) | 2020-05-28 |
| CN111032284B (zh) | 2022-11-04 |
| JP2020529332A (ja) | 2020-10-08 |
| US12208483B2 (en) | 2025-01-28 |
| KR20200037269A (ko) | 2020-04-08 |
| CN111032284A (zh) | 2020-04-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7165719B2 (ja) | 平坦性が向上された微細複製研磨表面 | |
| US11697185B2 (en) | Abrasive articles with precisely shaped features and method of making thereof | |
| TWI769988B (zh) | 拋光墊與系統及其製造與使用方法 | |
| US7658666B2 (en) | Superhard cutters and associated methods | |
| EP2845221B1 (en) | Cmp conditioner pads with superabrasive grit enhancement | |
| US9956664B2 (en) | Abrasive element precursor with precisely shaped features and methods of making thereof | |
| CN102049723B (zh) | 抛光半导体晶片的方法 | |
| US7762872B2 (en) | Superhard cutters and associated methods | |
| US20190099856A1 (en) | Polishing pad, method for manufacturing polishing pad, and polishing method | |
| US20090123705A1 (en) | CMP Pad Dressers | |
| WO2001026862A1 (en) | Conditioner for polishing pad and method for manufacturing the same | |
| WO2007047558A1 (en) | Abrasive article and method of modifying the surface of a workpiece | |
| JP2002504864A (ja) | モザイク研磨パッド及びこれに関連する方法 | |
| CN1254441A (zh) | 对半导体晶片表面进行平整的方法 | |
| WO2008063599A2 (en) | Superhard cutters and associated methods | |
| JP7273796B2 (ja) | 表面突起研磨パッド | |
| TWI383860B (zh) | Modular dresser | |
| TW201127554A (en) | Resin bonding pad conditioner with surface recessed pattern and manufacture method thereof | |
| CN112135709A (zh) | 化学机械平坦化垫的修整器及其相关方法 | |
| KR200188920Y1 (ko) | 연마패드용 컨디셔너 | |
| JP2005131779A (ja) | 研磨用複合素材工具プレート |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210730 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210730 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220620 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220705 |
|
| RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20220712 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220720 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220927 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20221024 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7165719 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |