JP7165719B2 - 平坦性が向上された微細複製研磨表面 - Google Patents

平坦性が向上された微細複製研磨表面 Download PDF

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Publication number
JP7165719B2
JP7165719B2 JP2020505906A JP2020505906A JP7165719B2 JP 7165719 B2 JP7165719 B2 JP 7165719B2 JP 2020505906 A JP2020505906 A JP 2020505906A JP 2020505906 A JP2020505906 A JP 2020505906A JP 7165719 B2 JP7165719 B2 JP 7165719B2
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Prior art keywords
offset
polishing
article
polishing pad
channel
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Japanese (ja)
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JP2020529332A (ja
JP2020529332A5 (enExample
Inventor
エー.ピー. マイヤー,ケネス
ジェイ. サリバン,ジョン
ダブリュ. リューク,ブライアン
ケー. レフー,デュイ
ジェイ. ムラディアン,デイヴィッド
エフ. スラマ,デイビッド
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2020529332A5 publication Critical patent/JP2020529332A5/ja
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/26Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/12Lapping plates for working plane surfaces
    • B24B37/16Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/22Lapping pads for working plane surfaces characterised by a multi-layered structure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00Tool surfaces formed with a pattern
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28Resins or natural or synthetic macromolecular compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29LINDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00Other particular articles
    • B29L2031/736Grinding or polishing equipment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
JP2020505906A 2017-08-04 2018-08-02 平坦性が向上された微細複製研磨表面 Active JP7165719B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762541362P 2017-08-04 2017-08-04
US62/541,362 2017-08-04
PCT/IB2018/055815 WO2019026021A1 (en) 2017-08-04 2018-08-02 MICRO-REPLICATED POLISHING SURFACE WITH IMPROVED COPLANARITY

Publications (3)

Publication Number Publication Date
JP2020529332A JP2020529332A (ja) 2020-10-08
JP2020529332A5 JP2020529332A5 (enExample) 2021-09-09
JP7165719B2 true JP7165719B2 (ja) 2022-11-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020505906A Active JP7165719B2 (ja) 2017-08-04 2018-08-02 平坦性が向上された微細複製研磨表面

Country Status (6)

Country Link
US (1) US12208483B2 (enExample)
JP (1) JP7165719B2 (enExample)
KR (1) KR102608124B1 (enExample)
CN (1) CN111032284B (enExample)
TW (1) TWI803502B (enExample)
WO (1) WO2019026021A1 (enExample)

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US11524385B2 (en) * 2019-06-07 2022-12-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with lobed protruding structures
CN114599482A (zh) * 2019-11-04 2022-06-07 3M创新有限公司 抛光制品、抛光系统和抛光方法
CN114630726A (zh) * 2019-11-05 2022-06-14 3M创新有限公司 模制研磨旋转工具
GB2595668B (en) * 2020-06-02 2022-05-25 Illinois Tool Works A contact cleaning surface
JP7435436B2 (ja) * 2020-12-24 2024-02-21 株式会社Sumco キャリアプレートの研磨方法
CN119927788B (zh) * 2025-04-08 2025-08-01 河北同光半导体股份有限公司 晶圆的研磨抛光加工方法

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US20060178099A1 (en) 2005-02-07 2006-08-10 Inoac Corporation Polishing pad
JP2013193181A (ja) 2012-03-21 2013-09-30 Fujibo Holdings Inc 研磨パッド用シート及びその製造方法、研磨パッド及びその製造方法、並びに研磨方法
WO2017062719A1 (en) 2015-10-07 2017-04-13 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
JP2017510470A (ja) 2014-04-03 2017-04-13 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びシステム、並びにその作製方法及び使用方法

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US3211811A (en) 1964-06-29 1965-10-12 Armorlite Leus Company Inc Method and apparatus for casting thermosetting plastic lenses
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
WO1996033839A1 (en) 1995-04-26 1996-10-31 Minnesota Mining And Manufacturing Company Method and apparatus for step and repeat exposures
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6780095B1 (en) * 1997-12-30 2004-08-24 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
FR2786118B1 (fr) * 1998-11-19 2000-12-22 Lam Plan Sa Dispositif de rodage ou polissage
JP2000158327A (ja) * 1998-12-02 2000-06-13 Rohm Co Ltd 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置
TW467802B (en) * 1999-10-12 2001-12-11 Hunatech Co Ltd Conditioner for polishing pad and method for manufacturing the same
US6776699B2 (en) * 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
US7160178B2 (en) 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US7048615B2 (en) 2004-08-05 2006-05-23 United Microelectronics Corp. Pad backer and CMP process using the same
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US7226345B1 (en) * 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
US7410413B2 (en) * 2006-04-27 2008-08-12 3M Innovative Properties Company Structured abrasive article and method of making and using the same
US7828634B2 (en) * 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
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US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
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JP2017510470A (ja) 2014-04-03 2017-04-13 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びシステム、並びにその作製方法及び使用方法
WO2017062719A1 (en) 2015-10-07 2017-04-13 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same

Also Published As

Publication number Publication date
WO2019026021A1 (en) 2019-02-07
TW201910056A (zh) 2019-03-16
TWI803502B (zh) 2023-06-01
KR102608124B1 (ko) 2023-11-29
US20200164484A1 (en) 2020-05-28
CN111032284B (zh) 2022-11-04
JP2020529332A (ja) 2020-10-08
US12208483B2 (en) 2025-01-28
KR20200037269A (ko) 2020-04-08
CN111032284A (zh) 2020-04-17

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