CN111032284B - 具有增强的共平面性的微复制型抛光表面 - Google Patents

具有增强的共平面性的微复制型抛光表面 Download PDF

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Publication number
CN111032284B
CN111032284B CN201880050836.9A CN201880050836A CN111032284B CN 111032284 B CN111032284 B CN 111032284B CN 201880050836 A CN201880050836 A CN 201880050836A CN 111032284 B CN111032284 B CN 111032284B
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China
Prior art keywords
offset
polishing
article
plane
polishing pad
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CN201880050836.9A
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English (en)
Chinese (zh)
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CN111032284A (zh
Inventor
肯尼思·A·P·梅耶
约翰·J·沙利文
布赖恩·W·利克
D·K·勒胡
大卫·J·穆拉迪安
大卫·F·斯拉马
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN111032284A publication Critical patent/CN111032284A/zh
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B24B37/16—Lapping plates for working plane surfaces characterised by the shape of the lapping plate surface, e.g. grooved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/736—Grinding or polishing equipment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
CN201880050836.9A 2017-08-04 2018-08-02 具有增强的共平面性的微复制型抛光表面 Active CN111032284B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762541362P 2017-08-04 2017-08-04
US62/541,362 2017-08-04
PCT/IB2018/055815 WO2019026021A1 (en) 2017-08-04 2018-08-02 MICRO-REPLICATED POLISHING SURFACE WITH IMPROVED COPLANARITY

Publications (2)

Publication Number Publication Date
CN111032284A CN111032284A (zh) 2020-04-17
CN111032284B true CN111032284B (zh) 2022-11-04

Family

ID=65233633

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880050836.9A Active CN111032284B (zh) 2017-08-04 2018-08-02 具有增强的共平面性的微复制型抛光表面

Country Status (6)

Country Link
US (1) US12208483B2 (enExample)
JP (1) JP7165719B2 (enExample)
KR (1) KR102608124B1 (enExample)
CN (1) CN111032284B (enExample)
TW (1) TWI803502B (enExample)
WO (1) WO2019026021A1 (enExample)

Families Citing this family (6)

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US11524385B2 (en) * 2019-06-07 2022-12-13 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with lobed protruding structures
CN114599482A (zh) * 2019-11-04 2022-06-07 3M创新有限公司 抛光制品、抛光系统和抛光方法
CN114630726A (zh) * 2019-11-05 2022-06-14 3M创新有限公司 模制研磨旋转工具
GB2595668B (en) * 2020-06-02 2022-05-25 Illinois Tool Works A contact cleaning surface
JP7435436B2 (ja) * 2020-12-24 2024-02-21 株式会社Sumco キャリアプレートの研磨方法
CN119927788B (zh) * 2025-04-08 2025-08-01 河北同光半导体股份有限公司 晶圆的研磨抛光加工方法

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US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
WO1996033839A1 (en) 1995-04-26 1996-10-31 Minnesota Mining And Manufacturing Company Method and apparatus for step and repeat exposures
US5921855A (en) 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6780095B1 (en) * 1997-12-30 2004-08-24 Micron Technology, Inc. Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates
FR2786118B1 (fr) * 1998-11-19 2000-12-22 Lam Plan Sa Dispositif de rodage ou polissage
JP2000158327A (ja) * 1998-12-02 2000-06-13 Rohm Co Ltd 化学的機械的研磨用研磨布およびそれを用いた化学的機械的研磨装置
TW467802B (en) * 1999-10-12 2001-12-11 Hunatech Co Ltd Conditioner for polishing pad and method for manufacturing the same
US6776699B2 (en) * 2000-08-14 2004-08-17 3M Innovative Properties Company Abrasive pad for CMP
US7160178B2 (en) 2003-08-07 2007-01-09 3M Innovative Properties Company In situ activation of a three-dimensional fixed abrasive article
US7048615B2 (en) 2004-08-05 2006-05-23 United Microelectronics Corp. Pad backer and CMP process using the same
US7169029B2 (en) * 2004-12-16 2007-01-30 3M Innovative Properties Company Resilient structured sanding article
US7261625B2 (en) 2005-02-07 2007-08-28 Inoac Corporation Polishing pad
US20070128991A1 (en) * 2005-12-07 2007-06-07 Yoon Il-Young Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same
US7226345B1 (en) * 2005-12-09 2007-06-05 The Regents Of The University Of California CMP pad with designed surface features
US7410413B2 (en) * 2006-04-27 2008-08-12 3M Innovative Properties Company Structured abrasive article and method of making and using the same
US7828634B2 (en) * 2007-08-16 2010-11-09 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Interconnected-multi-element-lattice polishing pad
WO2009032815A1 (en) 2007-09-06 2009-03-12 3M Innovative Properties Company Tool for making microstructured articles
US20100188751A1 (en) 2009-01-29 2010-07-29 3M Innovative Properties Company Optical films with internally conformable layers and method of making the films
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WO2012102978A1 (en) 2011-01-26 2012-08-02 3M Innovative Properties Company Abrasive article with replicated microstructured backing and method of using same
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JP5923353B2 (ja) 2012-03-21 2016-05-24 富士紡ホールディングス株式会社 研磨パッド用シート及びその製造方法、研磨パッド及びその製造方法、並びに研磨方法
JP6188286B2 (ja) * 2012-07-13 2017-08-30 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド及びガラス、セラミックス、及び金属材料の研磨方法
US9649742B2 (en) * 2013-01-22 2017-05-16 Nexplanar Corporation Polishing pad having polishing surface with continuous protrusions
US10160092B2 (en) * 2013-03-14 2018-12-25 Cabot Microelectronics Corporation Polishing pad having polishing surface with continuous protrusions having tapered sidewalls
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KR102347711B1 (ko) 2014-04-03 2022-01-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
CN204277743U (zh) 2014-10-29 2015-04-22 安阳方圆研磨材料有限责任公司 硬质抛光垫
JP6789982B2 (ja) 2015-05-13 2020-11-25 スリーエム イノベイティブ プロパティズ カンパニー 研磨パッド、並びに当該研磨パッドを使用するためのシステム及び方法
TWI769988B (zh) * 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法

Also Published As

Publication number Publication date
WO2019026021A1 (en) 2019-02-07
TW201910056A (zh) 2019-03-16
TWI803502B (zh) 2023-06-01
KR102608124B1 (ko) 2023-11-29
US20200164484A1 (en) 2020-05-28
JP2020529332A (ja) 2020-10-08
JP7165719B2 (ja) 2022-11-04
US12208483B2 (en) 2025-01-28
KR20200037269A (ko) 2020-04-08
CN111032284A (zh) 2020-04-17

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