JP7115469B2 - 封止フィルム、電子部品装置の製造方法及び電子部品装置 - Google Patents

封止フィルム、電子部品装置の製造方法及び電子部品装置 Download PDF

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Publication number
JP7115469B2
JP7115469B2 JP2019510149A JP2019510149A JP7115469B2 JP 7115469 B2 JP7115469 B2 JP 7115469B2 JP 2019510149 A JP2019510149 A JP 2019510149A JP 2019510149 A JP2019510149 A JP 2019510149A JP 7115469 B2 JP7115469 B2 JP 7115469B2
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Japan
Prior art keywords
resin layer
sealing
resin
electronic component
film
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JP2019510149A
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English (en)
Japanese (ja)
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JPWO2018181761A1 (ja
Inventor
豊 野村
裕介 渡瀬
弘邦 荻原
知世 金子
雅彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
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Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2018181761A1 publication Critical patent/JPWO2018181761A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP2019510149A 2017-03-31 2018-03-29 封止フィルム、電子部品装置の製造方法及び電子部品装置 Active JP7115469B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017072159 2017-03-31
JP2017072159 2017-03-31
PCT/JP2018/013344 WO2018181761A1 (fr) 2017-03-31 2018-03-29 Film d'étanchéité, procédé de fabrication de dispositif de composant électronique et dispositif de composant électronique

Publications (2)

Publication Number Publication Date
JPWO2018181761A1 JPWO2018181761A1 (ja) 2020-02-20
JP7115469B2 true JP7115469B2 (ja) 2022-08-09

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JP2019510149A Active JP7115469B2 (ja) 2017-03-31 2018-03-29 封止フィルム、電子部品装置の製造方法及び電子部品装置

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Country Link
JP (1) JP7115469B2 (fr)
KR (1) KR102440947B1 (fr)
CN (2) CN117438381A (fr)
TW (1) TWI733014B (fr)
WO (1) WO2018181761A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230133320A (ko) * 2021-01-19 2023-09-19 가부시끼가이샤 레조낙 도전성 부재, 전자 장치의 제조 방법, 접속 구조체,및, 전자 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014103187A (ja) 2012-11-19 2014-06-05 Shin Etsu Chem Co Ltd 繊維含有樹脂基板、封止後半導体素子搭載基板及び封止後半導体素子形成ウエハ、半導体装置、及び半導体装置の製造方法
JP2015076519A (ja) 2013-10-09 2015-04-20 富士通株式会社 電子部品パッケージおよび電子部品パッケージの製造方法
JP2016012713A (ja) 2014-06-05 2016-01-21 日立化成株式会社 樹脂フィルム、半導体装置および半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS616615A (ja) 1984-06-20 1986-01-13 Nippon Sheet Glass Co Ltd 屈折率分布型レンズ
JP2001127095A (ja) 1999-10-29 2001-05-11 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2001244372A (ja) 2000-03-01 2001-09-07 Seiko Epson Corp 半導体装置およびその製造方法
DE102006009789B3 (de) 2006-03-01 2007-10-04 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils aus einer Verbundplatte mit Halbleiterchips und Kunststoffgehäusemasse
US7906860B2 (en) * 2007-10-26 2011-03-15 Infineon Technologies Ag Semiconductor device
JP5385247B2 (ja) 2010-12-03 2014-01-08 信越化学工業株式会社 ウエハモールド材及び半導体装置の製造方法
KR101767381B1 (ko) * 2010-12-30 2017-08-11 삼성전자 주식회사 인쇄회로기판 및 이를 포함하는 반도체 패키지
JP5623970B2 (ja) 2011-04-22 2014-11-12 信越化学工業株式会社 樹脂積層体、及び半導体装置とその製造方法
JP6393092B2 (ja) * 2013-08-07 2018-09-19 日東電工株式会社 中空型電子デバイス封止用樹脂シート及び中空型電子デバイスパッケージの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014103187A (ja) 2012-11-19 2014-06-05 Shin Etsu Chem Co Ltd 繊維含有樹脂基板、封止後半導体素子搭載基板及び封止後半導体素子形成ウエハ、半導体装置、及び半導体装置の製造方法
JP2015076519A (ja) 2013-10-09 2015-04-20 富士通株式会社 電子部品パッケージおよび電子部品パッケージの製造方法
JP2016012713A (ja) 2014-06-05 2016-01-21 日立化成株式会社 樹脂フィルム、半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
KR102440947B1 (ko) 2022-09-05
CN117438381A (zh) 2024-01-23
TWI733014B (zh) 2021-07-11
WO2018181761A1 (fr) 2018-10-04
TW201903989A (zh) 2019-01-16
CN110462818A (zh) 2019-11-15
CN110462818B (zh) 2023-12-26
JPWO2018181761A1 (ja) 2020-02-20
KR20190132401A (ko) 2019-11-27

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