JP7114593B2 - ホットワイヤ化学気相堆積を介して、センサ用途のためにポリマー層を堆積するための方法 - Google Patents

ホットワイヤ化学気相堆積を介して、センサ用途のためにポリマー層を堆積するための方法 Download PDF

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JP7114593B2
JP7114593B2 JP2019530750A JP2019530750A JP7114593B2 JP 7114593 B2 JP7114593 B2 JP 7114593B2 JP 2019530750 A JP2019530750 A JP 2019530750A JP 2019530750 A JP2019530750 A JP 2019530750A JP 7114593 B2 JP7114593 B2 JP 7114593B2
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substrate
gas
monomer
polymer layer
sensor structure
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JP2020501372A5 (enExample
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コリン ナイカーク，
ユリー メルニーク，
プラビン ケー． ナーワンカー，
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02277—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
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    • H01L21/02107—Forming insulating materials on a substrate
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  • Chemical & Material Sciences (AREA)
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  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Molecular Biology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2019530750A 2016-12-09 2017-12-07 ホットワイヤ化学気相堆積を介して、センサ用途のためにポリマー層を堆積するための方法 Active JP7114593B2 (ja)

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Application Number Priority Date Filing Date Title
US201662432357P 2016-12-09 2016-12-09
US62/432,357 2016-12-09
US15/833,552 2017-12-06
US15/833,552 US10794853B2 (en) 2016-12-09 2017-12-06 Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition
PCT/US2017/065056 WO2018106886A1 (en) 2016-12-09 2017-12-07 Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

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JP2020501372A JP2020501372A (ja) 2020-01-16
JP2020501372A5 JP2020501372A5 (enExample) 2021-02-18
JP7114593B2 true JP7114593B2 (ja) 2022-08-08

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US (1) US10794853B2 (enExample)
EP (1) EP3551780A4 (enExample)
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CN (1) CN110023536A (enExample)
TW (1) TW201835112A (enExample)
WO (1) WO2018106886A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180148832A1 (en) * 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable carbon films using hot wire chemical vapor deposition
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition
JP7110090B2 (ja) * 2018-12-28 2022-08-01 東京エレクトロン株式会社 基板処理方法および基板処理システム
JP7304435B2 (ja) * 2019-05-31 2023-07-06 アプライド マテリアルズ インコーポレイテッド 基板上に膜を形成するための方法およびシステム
US12290835B2 (en) 2022-07-18 2025-05-06 Tokyo Electron Limited Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)
DE102023136688A1 (de) * 2023-12-23 2025-06-26 Christian-Albrechts-Universität zu Kiel, Körperschaft des öffentlichen Rechts Selbstladung-polymer-elektret-herstellungsverfahren

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087562A1 (en) 2007-09-27 2009-04-02 Long Hua Lee Method of preparing cross-linked organic glasses for air-gap sacrificial layers
US20110045349A1 (en) 2009-08-24 2011-02-24 Applied Materials, Inc. 3d approach on battery and supercapacitor fabrication by initiation chemical vapor deposition techniques
WO2012165944A1 (en) 2011-05-27 2012-12-06 Universiteit Utrecht Holding B.V. Hot wire chemical vapour deposition process for producing an inorganic-polymer multi-layer stack
JP2013534970A (ja) 2010-06-11 2013-09-09 東京エレクトロン株式会社 化学気相成長を制御するための装置及び方法
US20130337615A1 (en) 2012-05-25 2013-12-19 Applied Materials, Inc. Polymer hot-wire chemical vapor deposition in chip scale packaging
JP2016516100A (ja) 2013-02-15 2016-06-02 マサチューセッツ インスティテュート オブ テクノロジー 滴状凝縮のためのグラフトポリマー表面、ならびに関連使用および製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8400916A (nl) 1984-03-22 1985-10-16 Stichting Ct Voor Micro Elektr Werkwijze voor het vervaardigen van een isfet en een aldus vervaardigde isfet.
JPH06273376A (ja) * 1993-03-19 1994-09-30 Mitsubishi Cable Ind Ltd イオン感応性電界効果型トランジスタ用イオン感応膜の製造方法
JP4144271B2 (ja) 2002-07-09 2008-09-03 住友化学株式会社 高分子薄膜およびそれを用いた高分子薄膜素子
US6800802B2 (en) * 2002-11-09 2004-10-05 Novaest Optitronix Inc. Circuit device for solar energy application
JP2004197209A (ja) * 2002-12-20 2004-07-15 Kyocera Corp ホットワイヤｃｖｄ装置
WO2004100281A1 (en) 2003-05-12 2004-11-18 Cambridge University Technical Services Limited Polymer transistor
GB0310858D0 (en) * 2003-05-12 2003-06-18 Univ Cambridge Tech Polymer transistor
US7431969B2 (en) 2005-08-05 2008-10-07 Massachusetts Institute Of Technology Chemical vapor deposition of hydrogel films
US8481159B2 (en) 2009-09-04 2013-07-09 Basf Se Water-absorbent porous polymer particles having specific sphericity and high bulk density
US8117987B2 (en) * 2009-09-18 2012-02-21 Applied Materials, Inc. Hot wire chemical vapor deposition (CVD) inline coating tool
US20120315405A1 (en) * 2010-02-26 2012-12-13 Alliance For Sustainable Energy, Llc Hot wire chemical vapor depostion (hwcvd) with carbide filaments
US8709537B2 (en) 2010-10-22 2014-04-29 Applied Materials, Inc. Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes
US8662941B2 (en) * 2011-05-12 2014-03-04 Applied Materials, Inc. Wire holder and terminal connector for hot wire chemical vapor deposition chamber
US8642376B2 (en) 2011-05-16 2014-02-04 Applied Materials, Inc. Methods for depositing a material atop a substrate
US8785304B2 (en) * 2011-08-26 2014-07-22 Applied Materials, Inc. P-I-N structures and methods for forming P-I-N structures having an i-layer formed via hot wire chemical vapor deposition (HWCVD)
US8906454B2 (en) * 2011-09-12 2014-12-09 Applied Materials, Inc. Methods for depositing metal-polymer composite materials atop a substrate
US9416450B2 (en) * 2012-10-24 2016-08-16 Applied Materials, Inc. Showerhead designs of a hot wire chemical vapor deposition (HWCVD) chamber
RU2655389C2 (ru) 2012-12-17 2018-05-28 Басф Се Водорастворимые, гидрофобно-ассоциирующие сополимеры с гидрофобно-ассоциирующими мономерами нового типа
EP2946430A1 (en) * 2013-01-18 2015-11-25 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Proton conductive membrane deposited by hot wire cvd technique
US9305796B2 (en) 2013-11-05 2016-04-05 Applied Materials, Inc. Methods for etching silicon using hydrogen radicals in a hot wire chemical vapor deposition chamber
CN103928525A (zh) * 2014-04-25 2014-07-16 中国科学院微电子研究所 场效应晶体管液体传感器及其制备方法
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US10794853B2 (en) * 2016-12-09 2020-10-06 Applied Materials, Inc. Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090087562A1 (en) 2007-09-27 2009-04-02 Long Hua Lee Method of preparing cross-linked organic glasses for air-gap sacrificial layers
US20110045349A1 (en) 2009-08-24 2011-02-24 Applied Materials, Inc. 3d approach on battery and supercapacitor fabrication by initiation chemical vapor deposition techniques
JP2013534970A (ja) 2010-06-11 2013-09-09 東京エレクトロン株式会社 化学気相成長を制御するための装置及び方法
WO2012165944A1 (en) 2011-05-27 2012-12-06 Universiteit Utrecht Holding B.V. Hot wire chemical vapour deposition process for producing an inorganic-polymer multi-layer stack
US20130337615A1 (en) 2012-05-25 2013-12-19 Applied Materials, Inc. Polymer hot-wire chemical vapor deposition in chip scale packaging
JP2016516100A (ja) 2013-02-15 2016-06-02 マサチューセッツ インスティテュート オブ テクノロジー 滴状凝縮のためのグラフトポリマー表面、ならびに関連使用および製造方法

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WO2018106886A1 (en) 2018-06-14
CN110023536A (zh) 2019-07-16
EP3551780A4 (en) 2020-08-05
EP3551780A1 (en) 2019-10-16
US10794853B2 (en) 2020-10-06
US20180164245A1 (en) 2018-06-14
TW201835112A (zh) 2018-10-01
JP2020501372A (ja) 2020-01-16

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