JP2020501372A - ホットワイヤ化学気相堆積を介して、センサ用途のためにポリマー層を堆積するための方法 - Google Patents
ホットワイヤ化学気相堆積を介して、センサ用途のためにポリマー層を堆積するための方法 Download PDFInfo
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Abstract
Description
Claims (15)
- ポリマー層を堆積する方法であって、
ホットワイヤ化学気相堆積(HWCVD)チャンバの内部で、基板、前記基板上に配置されたセンサ構造体、並びにイニシエータガス、モノマーガス、及びキャリアガスを含む処理ガスを加熱することであって、前記モノマーガスを分解せずに前記イニシエータラジカルを形成するのに十分な温度まで実施される、加熱することと、
前記センサ構造体、イニシエータラジカル、及び前記モノマーガスを接触させて、センサ構造体の上にポリマー層を形成することと
を含む、方法。 - 前記ポリマー層が、約1nmから約100nmの厚さを有する、請求項1に記載の方法。
- 前記厚さが、前記基板にわたって約5パーセント未満の厚み偏差を有する、請求項2に記載の方法。
- 前記基板及び前記センサ構造体を約−20℃から約100℃の温度まで冷却することをさらに含む、請求項1に記載の方法。
- 前記ポリマー層が、コポリマー層であり、前記コポリマーが、1つ又は複数の親水性モノマー成分、官能性モノマー成分、及び任意選択的にクロスリンカーを含む、請求項1から4のいずれか一項に記載の方法。
- 前記HWCVDチャンバ内に配置された複数のフィラメントを、前記モノマーガスを分解せずに前記イニシエータガスを活性化するのに十分な第1の温度まで加熱することをさらに含む、請求項1から4のいずれか一項に記載の方法。
- 前記複数のフィラメントが、約150℃から約600℃の温度まで加熱される、請求項6に記載の方法。
- 加熱前に、接着化学物質を用いて前記基板又は前記センサ構造体を処理して、前記センサ構造体からの前記ポリマー層の層間剥離を防ぐことをさらに含む、請求項1から4のいずれか一項に記載の方法。
- 前記キャリアガスが、アルゴン、窒素、又はヘリウムのうちの少なくとも1つである、請求項1から4のいずれか一項に記載の方法。
- 前記イニシエータガスが、ジ−tert−ブチルペルオキシド(TBPO)、ジ−tert−アミルペルオキシド(TAPO)、トリエチルアミン(TEA)、tert−ブチルペルオキシベンゾアート、パーフルオロオクタンスルホニルフルオリド、又はパーフルオロブタンスルホニルフルオリドである、請求項1から4のいずれか一項に記載の方法。
- 前記モノマーガスが、親水性モノマー、クロスリンカー、及び官能性モノマーの混合物を含む、請求項1から4のいずれか一項に記載の方法。
- 前記親水性モノマーが、ヒドロキシエチルメタクリレート、N−イソプロピルアクリルアミド、N,N−ジメチルアクリルアミド、若しくはメタクリル酸であり、又は前記クロスリンカーが、1つより多くの重合性の炭素−炭素二重結合を含み、又は前記クロスリンカーが、エチレングリコールジメタクリレート、エチレングリコールジアクリレート、ブタンジオールジアクリレート、若しくはヘキサンジオールジアクリレートである、請求項11に記載の方法。
- 前記官能性モノマーが、グリシジルメタクリレート、メタクリル酸、又は4−アミノスチレンである、請求項11に記載の方法。
- 前記イニシエータガス対前記モノマーガスの流量の比が、約0.1:1から約1:1であり、前記HWCVDチャンバ内の圧力が、約0.1から約10Torrである、請求項1から4のいずれか一項に記載の方法。
- 基板であって、
前記基板の上のイオン感応性電界効果トランジスタセンサ構造体、及び
約100nm未満の厚さ、及び前記基板にわたって約5パーセント未満の厚さ偏差を有する、前記イオン感応性電界効果トランジスタセンサ構造体の上のポリマー層
を備えている基板。
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US15/833,552 US10794853B2 (en) | 2016-12-09 | 2017-12-06 | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
US15/833,552 | 2017-12-06 | ||
PCT/US2017/065056 WO2018106886A1 (en) | 2016-12-09 | 2017-12-07 | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
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US20180148832A1 (en) * | 2016-11-25 | 2018-05-31 | Applied Materials, Inc. | Methods for depositing flowable carbon films using hot wire chemical vapor deposition |
US10794853B2 (en) * | 2016-12-09 | 2020-10-06 | Applied Materials, Inc. | Methods for depositing polymer layer for sensor applications via hot wire chemical vapor deposition |
JP7110090B2 (ja) * | 2018-12-28 | 2022-08-01 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム |
KR20210155812A (ko) * | 2019-05-31 | 2021-12-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판들 상에 막들을 형성하기 위한 방법들 및 시스템들 |
US20240017290A1 (en) * | 2022-07-18 | 2024-01-18 | Tokyo Electron Limited | Methods For Stabilization Of Self-Assembled Monolayers (SAMs) Using Sequentially Pulsed Initiated Chemical Vapor Deposition (spiCVD) |
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EP3551780A4 (en) | 2020-08-05 |
TW201835112A (zh) | 2018-10-01 |
EP3551780A1 (en) | 2019-10-16 |
US20180164245A1 (en) | 2018-06-14 |
CN110023536A (zh) | 2019-07-16 |
JP7114593B2 (ja) | 2022-08-08 |
US10794853B2 (en) | 2020-10-06 |
WO2018106886A1 (en) | 2018-06-14 |
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