JP7113919B2 - 固体電解質及びこの製造方法 - Google Patents
固体電解質及びこの製造方法 Download PDFInfo
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- JP7113919B2 JP7113919B2 JP2020570422A JP2020570422A JP7113919B2 JP 7113919 B2 JP7113919 B2 JP 7113919B2 JP 2020570422 A JP2020570422 A JP 2020570422A JP 2020570422 A JP2020570422 A JP 2020570422A JP 7113919 B2 JP7113919 B2 JP 7113919B2
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- solid electrolyte
- boron nitride
- polysiloxane
- aromatic hydrocarbon
- modified
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- 239000007784 solid electrolyte Substances 0.000 title claims description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 78
- -1 polysiloxane Polymers 0.000 claims description 72
- 229910052582 BN Inorganic materials 0.000 claims description 51
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- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 32
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 20
- 229910003002 lithium salt Inorganic materials 0.000 claims description 20
- 159000000002 lithium salts Chemical class 0.000 claims description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
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- C01B35/00—Boron; Compounds thereof
- C01B35/08—Compounds containing boron and nitrogen, phosphorus, oxygen, sulfur, selenium or tellurium
- C01B35/14—Compounds containing boron and nitrogen, phosphorus, sulfur, selenium or tellurium
- C01B35/146—Compounds containing boron and nitrogen, e.g. borazoles
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- C—CHEMISTRY; METALLURGY
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- C08K3/38—Boron-containing compounds
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Description
本発明は、ポリシロキサンを含む固体電解質に係り、イオン伝導度を向上するためのフィラーとして窒化ホウ素(boron nitride、BN)を含む固体電解質に関する。
本発明はまた、従来の固体電解質に対して同等レベル以上の機械的物性を維持しながらイオン伝導度が改善された固体電解質の製造方法に係り、前記固体電解質の製造方法は(S1)窒化ホウ素と多環芳香族炭化水素(multi aromatic hydrocarbon)を反応させ、前記多環芳香族炭化水素と結合されて表面改質された窒化ホウ素を形成する段階;(S2)ポリシロキサン、架橋剤及び光開始剤を有機溶媒に溶解させて混合液を形成する段階;(S3)前記混合液に前記表面改質された窒化ホウ素とリチウム塩を添加してスラリーを形成する段階;及び(S4)前記スラリーを基材上にキャスティングした後架橋させる段階;を含むことができる。
(S1)段階では、窒化ホウ素と多環芳香族炭化水素(multi aromatic hydrocarbon)を反応させ、前記多環芳香族炭化水素と結合されて表面改質された窒化ホウ素を形成することができる。
(S2)段階では、ポリシロキサン、架橋剤及び開始剤を有機溶媒に溶解させて混合液を形成することができる。前記ポリシロキサン、架橋剤及び有機溶媒の種類、特徴及び重量は前述したとおりである。
(S3)段階では、前記混合液に前記表面改質された窒化ホウ素とリチウム塩を添加してスラリーを形成することができる。前記表面改質された窒化ホウ素とリチウム塩の物性、特徴及び重量は前述したとおりである。
(S4)段階では、前記スラリーを基材上にキャスティングした後硬化させることができる。
本発明はまた、前述したような固体電解質を含むリチウム二次電池に関する。
固体電解質のフィラーで使うための窒化ホウ素の表面改質に使用するためのポリエチレングリコール-ピレン(PEG-pyrene)を合成した。
PEG-pyreneの合成過程は下記反応式1のとおりである。
溶媒のクロロホルム(chloroform)にPEG(Mn=400、n=8.3)を溶解させ、無水コハク酸(Succinic anhydride)と触媒としてDMAP(4-ジメチルアミノピリジン(4-dimethylaminopyridine))を添加し、25℃で24時間反応させた。この時、前記PEG1モルに対して無水コハク酸1.2モルの割合で添加し、前記DMAPは前記PEG1モルに対して10モルの割合で添加した。
溶媒のジメチルホルムアミド(dimethylformamide、DMF)に1-ピレンメタノール(1-pyrenmethanol)を溶解させ、前記末端がカルボキシル基で改質されたPEG(PEG-COOH)と触媒としてEDC(エチレンジクロライド(Ethylene Dichloride))/DMAPを添加し、50℃で21時間反応させた。この時、前記1-ピレンメタノール1モルに対して前記末端がカルボキシル基で改質されたPEG(PEG-COOH)を1.5モルの割合で添加し、前記EDC/DMAPはそれぞれ1モル及び0.1モルの割合で添加した。
図1は、製造例1で合成されたカルボキシル基で表面改質されたポリエチレングリコール(PEG-COOH)とPEGで表面改質された1-ピレンメタノール(PEG-pyrene)に対するH1NMRグラフである。
固体電解質のフィラーで使うための窒化ホウ素の表面改質に使用するためのパーフルオロポリエーテル-ピレン(PFPE-pyrene)を合成した。
PFPEと1-ピレンメタノールを1.2:1のモルの割合で塩化チオニル(thionyl chloride、SOCl2)に溶かした後、80℃で12時間反応させ、下記化学式1で表されるPFPE-pyreneを合成した。残っている塩化チオニルは蒸発させ、クロロホルムを利用して反応していない1-ピレンメタノールを洗浄して取り除いた。
図2は、比較製造例1で合成されたパーフルオロポリエーテル-ピレン(PFPE-pyrene)のC-NMRグラフである。
塩酸(0.104mol)をエタノール水溶液(水4.3g+エタノール18.4g)に溶かした後、前記溶液に3-メルカプトプロピルメチルジメトキシシラン((3-Mercaptopropyl)methyldimethoxysilane、0.02mol)と3-メルカプトプロピルトリメトキシシラン((3-Mercaptopropyl)trimethoxysilane、0.02mol)を添加し、50℃で3時間反応させた。その後、反応物を蒸溜水に沈澱させて不純物を取り除いた後、合成されたポリシロキサンを得た。
ポリエチレングリコールメチルエーテル(Poly(ethylene glycol)methyl ether、Mw350g/mol、35g、0.10mol)と臭化アリル(allyl bromide、0.11mol)をトルエン100mlに溶かし、NaOH(0.11mol)を溶かして45℃で16時間反応させた。その後、反応物をNaCl水溶液とジクロロメタン(dichloromethane)で抽出して精製し、合成されたAPEGを得た。
下記表1に記載された組成比によって以下のような方法で固体電解質を製造した。
下記反応式2によって窒化ホウ素(BN)の表面改質反応を実施した。
前記製造例2で得たポリシロキサン(Mn=1000g/mol)0.1gに、製造例3で得たアリルポリエチレングリコール(APEG)とテトラアリルオキシエタン(tetraallyloxyethane、TAOE)を4:1のモルの割合で混合した。光開始剤である2,2-ジメトキシ-2-フェニルアセトフェノン(2,2-dimethoxy-2-phenylacetophenone、DMPA)をポリシロキサンに対して10重量%さらに混合した後、メタノール0.4gに溶かして混合液を得た。
前記(1)で得た表面改質されたBN(PBN)と、リチウム塩としてLiTFSI([EO/Li]=0.07)を前記(2)で得た混合液に添加して3時間超音波処理してスラリーを得た。この時、EOはエチレンオキサイド(ethylene oxide)を意味し、[EO/Li]はEOとLiのモル比を意味する。
前記(3)で得たスラリーを2.5cm×2.5cmのガラスにキャスティングした後、1時間UV照射して硬化させて固体電解質膜を製造した。
前記表1に記載された組成によって実施例1と同様の方法で実施するが、PEGで表面改質された窒化ホウ素(PBN)を使わずに固体電解質を製造した。
前記表1に記載された組成によって実施例1で使ったフィラーであるPEGで表面改質されたBN(PBN)の代わりにPFPEで表面改質されたBN(FBN)を使って固体電解質を製造した。
下記反応式3によって窒化ホウ素(BN)の表面改質反応を実施した。
下記反応式4によってゲル高分子電解質(Gel Polymer Electrolyte、G-CFBN)を製造した。
フィラーを含んでいないPVH(ポリ(フッ化ビニリデン-ヘキサフルオロプロピレン):PVDF-HFP(Poly(vinylidene fluoride-hexafluoropropylene)))膜を製作した後、これを電解液(1M LiTFSI in EC:EDC(1:1vol%)に含浸させて作ったゲル高分子電解質を製造した(G-PVH)。
常用化された電解質膜のCelgardR 2325を電解液(1M LiTFSI in EC:EDC(1:1vol%)に含浸させて電解質を製造した(LE-Celgard)。
実施例及び比較例で製造された物質に対する構造を確認する実験を行った。
実施例及び比較例で製造された固体電解質膜に対するイオン伝導度を計算した。
σ=(1/R)x(d/A)
前記式において、σはイオン伝導度、Rは固体電解質の抵抗、dは固体電解質の厚さ、Aは固体電解質の面積である。
実施例及び比較例で製造された固体電解質膜に対する熱的安定性に対する実験を行った。
実施例の中でイオン伝導度が最も高く表れたPBNの含量が0.5重量%の実施例3(図9a参照)の固体電解質膜に対する電気化学的安定性に対する実験を行った。
比較例2、3、4でそれぞれ製造されたゲル高分子電解質(G-CFBN、G-PVH、LE-Celgard)を含む電池に対する性能実験を行った。
Claims (13)
- ポリシロキサンを含む固体電解質において、
前記固体電解質は窒化ホウ素(boron nitride、BN)を含み、
前記窒化ホウ素は、多環芳香族炭化水素(multi aromatic hydrocarbon)が結合されて表面改質された窒化ホウ素である、固体電解質。 - 前記固体電解質は、ポリシロキサン高分子マトリックス;リチウム塩;有機溶媒;架橋剤;及びフィラーとして窒化ホウ素(boron nitride、BN);を含む、請求項1に記載の固体電解質。
- 前記窒化ホウ素は、前記ポリシロキサンの重量を基準にして0.1ないし5質量%含まれたものである、請求項1または2に記載の固体電解質。
- 前記多環芳香族炭化水素は、ピレン(pyrene)、ペリレン(perylene)及びベンゾペリレン(benzoperylene)からなる群から選択される1種以上である、請求項1から3のいずれか一項に記載の固体電解質。
- 前記多環芳香族炭化水素は、ポリエチレングリコール(polyethylene、PEG)が結合されて末端が改質されたものである、請求項1から4のいずれか一項に記載の固体電解質。
- 前記多環芳香族炭化水素は、前記表面改質された窒化ホウ素の総重量を基準にして4ないし10質量%含まれたものである、請求項1から5のいずれか一項に記載の固体電解質。
- 前記ポリシロキサンの分子量(Mn)は800ないし1200である、請求項1から6のいずれか一項に記載の固体電解質。
- 前記リチウム塩は、LiN(SO2CF3)2(LiTFSI)LiSCN、LiN(CN)2、LiClO4、LiBF4、LiAsF6、LiPF6、LiCF3SO3、Li(CF3SO2)3C、LiN(SO2CF3)2、LiN(SO2CF2CF3)2、LiSbF6、LiPF3(CF2CF3)3、LiPF3(C2F5)3、LiPF3(CF3)3、及びLiB(C2O4)2で構成された群から選択された1種以上である、請求項2に記載の固体電解質。
- 前記有機溶媒は、メタノール、アセトン、4-アセチルモルホリン(4-acetylmorpholine)、2-メチルピリジン-1-オキサイド(2-methylpyridine1-oxide)、2-ピロリドン(2-pyrrolidon)、1-(2-ヒドロキシエチル)-2-ピロリドン(1-(2-hydroxyethyl)-2-pyrrolidinone)、プロピレンカーボネート(propylene carbonate、PC)、エチレンカーボネート(ethylene carbonate、EC)、2-オキセパノン(2-oxepanone)、ブタノン(butanone)、2-ペンタノン(2-pentanone)、メチルエチルケトン(methyl ethyl ketone、MEK)及びメトキシノナフルオロブタン(methoxynonafluorobutane)で構成された群から選択される1種以上である、請求項2に記載の固体電解質。
- 前記架橋剤はテトラアリルオキシエタン(tetraallyl oxy ethane、TAOE)である、請求項2に記載の固体電解質。
- (S1)窒化ホウ素と多環芳香族炭化水素(multi aromatic hydrocarbon)を反応させ、前記多環芳香族炭化水素と結合されて表面改質された窒化ホウ素を形成する段階;
(S2)ポリシロキサン、架橋剤及び光開始剤を有機溶媒に溶解させて混合液を形成する段階;
(S3)前記混合液に前記表面改質された窒化ホウ素とリチウム塩を添加してスラリーを形成する段階;及び
(S4)前記スラリーを基材上にキャスティングした後硬化させる段階;
を含む固体電解質の製造方法。 - 前記開始剤は、2,2-ジメトキシ-2-フェニルアセトフェノン(2,2-dimethoxy-2-phenylacetophenone)、1-ヒドロキシ-シクロヘキシル-フェニルケトン(1-hydroxy-cyclohexyl phenyl ketone)及び2,4,6-トリメチルベンゾイルジフェニル-ホスフィンオキシド(2,4,6-trimethylbenzoyldiphenyl-phosphineoxide)からなる群から選択される1種以上の光開始剤である、請求項11に記載の固体電解質の製造方法。
- 請求項1ないし請求項10のいずれか一項に記載の固体電解質を含むリチウム二次電池。
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