JP7106194B2 - ジルコニウム接着膜を備えた水素フリー炭素被覆部 - Google Patents
ジルコニウム接着膜を備えた水素フリー炭素被覆部 Download PDFInfo
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Description
非晶質炭素ベースの硬質材料膜はDLC膜とも称されるが、これは従来技術から公知である。しかし、この種の膜は、とりわけこの硬質水素フリー膜がa-Cまたはta-Cのタイプの場合に、かならずしも基材に対して十分な接着力は有さない。これは、膜の固有応力が高い状態であることが原因で、これにより、優れた機能性を有するこのタイプの膜を、プロセスとして安定し接着性を高くして析出することが困難である。
・基材上に形成される基本膜であって、この基本膜は、元素Mの窒化物または炭窒化物を含み、式M1-x-yCxNyで示される組成を有し、xは0.5以下であり、yは0.03以上であり、1-x-yは0より大きく、Mは周期表の第4A属元素、第5A属元素、第6A属元素、AlおよびSiから選択される少なくとも1つの元素であり、かつ、元素MはTi、Zr、V、Nb、Ta、Cr、Mo、W、AlおよびSiを含み、好ましくは、MはW、MoおよびTaの元素を含む、基本膜と、
・基本膜上に形成された傾斜膜であって、この傾斜膜は、M、窒素および炭素を含有し、ここで基本膜から、傾斜膜上にある非晶質炭素層に向けて、元素Mおよび窒素の割合が減少し、炭素の割合が増大する、傾斜膜と、
・傾斜膜上に形成された表面層であって、非晶質炭素(DLC)層を含み、この非晶質炭素層は、炭素からなるか、50原子%以上が炭素からなり、残りは元素Mからなる、表面層と、かつ任選択的に追加的に以下も、すなわち、
・基材と基本膜との間に形成されたある元素の膜であって、この元素は、周期表の第4A属元素、第5A属元素、第6A属元素、AlおよびSiから選択されうる、元素の膜と
を具備する。
本発明の目的は、硬質水素フリー非晶質炭素ベースの膜を含む硬質材料被覆部を提供することであり、この場合、この硬質材料被覆部は可能な単純な膜構造と、基材に対する非常に良好な接着性とを、高い負荷範囲での応用の場合でさえも有する。
この目的は、本発明によれば、請求項1中に記載されたような炭素被覆部を提供することである。
Claims (9)
- 基材表面上の炭素被覆部であって、前記炭素被覆部は、硬質炭素膜とジルコニウム接着膜とを具備し、前記炭素膜は硬質の水素フリー非晶質炭素膜であり、前記ジルコニウム接着膜はジルコニウムからなり、前記ジルコニウム接着膜は、前記基材表面と前記硬質炭素膜との間に形成されていて、前記ジルコニウム接着膜と前記硬質炭素膜との間にZr-Cx膜が形成されていて、前記Zr-Cx膜は、前記硬質炭素膜の炭素原子と前記ジルコニウム接着膜のジルコニウム原子との間の原子結合を含み、かつ、膜厚が2原子層から10原子層までであり、
前記水素フリー非晶質炭素膜は、多層膜として設計されていて、ここで前記多層膜の構造は、交互に析出されたタイプAおよびタイプBの個々の層を含み、前記タイプAの個々の層は、a-Cまたはta-C膜であり、前記タイプBの個々の層は、a-C:Meまたはta-C:MeまたはMeからなる金属膜である(ここで、Meは金属元素または金属元素の組み合わせである)、あるいはa-C:Xまたはta-C:X膜である(ここで、Xは非金属元素または非金属元素の組み合わせである)、炭素被覆部。 - 前記基材と前記ジルコニウム接着膜との間に、支持膜が析出されていることを特徴とする、請求項1に記載の炭素被覆部。
- 前記支持膜は、周期表の第3族、第4族、第5族または第6族と、Al、Si、Bと、ランタノイド群とから形成される群の少なくとも1つの元素の窒化物および/または炭化物および/または酸化物からなることを特徴とする、請求項2に記載の炭素被覆部。
- 前記Zr-Cx膜はジルコニウム単炭化物を含有することを特徴とする、上記請求項1~3のいずれか1項に記載の炭素被覆部。
- 上記請求項1~4のいずれか1項に記載の炭素被覆部を析出する方法において、前記水素フリー非晶質炭素膜を、アーク蒸発、フィルタードアーク蒸発およびスパッタリング方法からなる群から選択される少なくとも1つを用いて析出し、前記Zr-C x 膜は、ZrおよびCの同時析出により析出されることを特徴とする方法。
- 前記スパッタリング方法は、HiPIMS方法である、請求項5に記載の方法。
- 上記請求項1~4のいずれか1項に記載の炭素被覆部を析出する方法において、前記ジルコニウム接着膜を、Zrイオンを用いたイオン洗浄方法、フィルタードアーク蒸発方法およびスパッタリング方法からなる群から選択される少なくとも1つを用いて析出することを特徴とする方法。
- 前記スパッタリング方法は、HiPIMS方法である、請求項7に記載の方法。
- 上記請求項4に記載の炭素被覆部を析出する方法において、前記Zr-Cx膜中の前記ジルコニウム単炭化物を、ジルコニウムおよび炭素を前記ジルコニウム接着膜上に同時に析出することにより形成することを特徴とする方法。
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