JP7101905B1 - 電磁波検出器、及び電磁波検出器アレイ - Google Patents

電磁波検出器、及び電磁波検出器アレイ Download PDF

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Publication number
JP7101905B1
JP7101905B1 JP2021560891A JP2021560891A JP7101905B1 JP 7101905 B1 JP7101905 B1 JP 7101905B1 JP 2021560891 A JP2021560891 A JP 2021560891A JP 2021560891 A JP2021560891 A JP 2021560891A JP 7101905 B1 JP7101905 B1 JP 7101905B1
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layer
electromagnetic wave
dimensional material
wave detector
semiconductor layer
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Japanese (ja)
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JPWO2022208690A1 (https=
Inventor
聡志 奥田
新平 小川
昌一郎 福島
政彰 嶋谷
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2021560891A 2021-03-30 2021-03-30 電磁波検出器、及び電磁波検出器アレイ Active JP7101905B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/013671 WO2022208690A1 (ja) 2021-03-30 2021-03-30 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法

Publications (2)

Publication Number Publication Date
JP7101905B1 true JP7101905B1 (ja) 2022-07-15
JPWO2022208690A1 JPWO2022208690A1 (https=) 2022-10-06

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Country Link
US (1) US20240154046A1 (https=)
JP (1) JP7101905B1 (https=)
CN (1) CN117063298A (https=)
WO (1) WO2022208690A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022235423A2 (en) * 2021-04-19 2022-11-10 Board Of Regents, The University Of Texas System Photoelectrodes and methods of making and use thereof
CN119092590B (zh) * 2024-08-27 2026-01-09 中国电子科技集团公司第十一研究所 n p n中中双色碲镉汞红外光电探测器半导体器件及制备方法
CN119379669B (zh) * 2024-12-24 2025-04-04 杭州睿影科技有限公司 图像检测方法及计算机程序产品

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022525A (ja) * 2012-07-17 2014-02-03 Nippon Hoso Kyokai <Nhk> 有機光電変換素子、及び、これを含む受光素子
US20160380219A1 (en) * 2015-06-25 2016-12-29 International Business Machines Corporation Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same
WO2020184015A1 (ja) * 2019-03-12 2020-09-17 パナソニックＩｐマネジメント株式会社 撮像素子、撮像素子の製造方法及び撮像装置
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8878157B2 (en) * 2011-10-20 2014-11-04 University Of Kansas Semiconductor-graphene hybrids formed using solution growth
US20150243826A1 (en) * 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US10354935B2 (en) * 2014-06-10 2019-07-16 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) Graphene structure and method for manufacturing the same
KR102313052B1 (ko) * 2016-02-02 2021-10-15 버세리엔 피엘씨 그래핀 기반 박막 적층체의 제조방법 및 상기 그래핀 기반 박막 적층체
KR20190113820A (ko) * 2017-02-08 2019-10-08 트리나미엑스 게엠베하 적어도 하나의 대상체의 광학적 검출을 위한 검출기
US10777662B2 (en) * 2017-11-22 2020-09-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor and manufacturing method thereof
CN120358826A (zh) * 2019-06-03 2025-07-22 蒂梅尔罗德科技有限责任公司 高效率石墨烯/宽带隙半导体异质结太阳能电池

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014022525A (ja) * 2012-07-17 2014-02-03 Nippon Hoso Kyokai <Nhk> 有機光電変換素子、及び、これを含む受光素子
US20160380219A1 (en) * 2015-06-25 2016-12-29 International Business Machines Corporation Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same
WO2020184015A1 (ja) * 2019-03-12 2020-09-17 パナソニックＩｐマネジメント株式会社 撮像素子、撮像素子の製造方法及び撮像装置
WO2021002070A1 (ja) * 2019-07-04 2021-01-07 三菱電機株式会社 電磁波検出器

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Publication number Publication date
US20240154046A1 (en) 2024-05-09
CN117063298A (zh) 2023-11-14
JPWO2022208690A1 (https=) 2022-10-06
WO2022208690A1 (ja) 2022-10-06

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