JPWO2022208690A1 - - Google Patents
Info
- Publication number
- JPWO2022208690A1 JPWO2022208690A1 JP2021560891A JP2021560891A JPWO2022208690A1 JP WO2022208690 A1 JPWO2022208690 A1 JP WO2022208690A1 JP 2021560891 A JP2021560891 A JP 2021560891A JP 2021560891 A JP2021560891 A JP 2021560891A JP WO2022208690 A1 JPWO2022208690 A1 JP WO2022208690A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/93—Interconnections
- H10F77/933—Interconnections for devices having potential barriers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/013671 WO2022208690A1 (ja) | 2021-03-30 | 2021-03-30 | 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP7101905B1 JP7101905B1 (ja) | 2022-07-15 |
| JPWO2022208690A1 true JPWO2022208690A1 (https=) | 2022-10-06 |
Family
ID=82446220
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021560891A Active JP7101905B1 (ja) | 2021-03-30 | 2021-03-30 | 電磁波検出器、及び電磁波検出器アレイ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240154046A1 (https=) |
| JP (1) | JP7101905B1 (https=) |
| CN (1) | CN117063298A (https=) |
| WO (1) | WO2022208690A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022235423A2 (en) * | 2021-04-19 | 2022-11-10 | Board Of Regents, The University Of Texas System | Photoelectrodes and methods of making and use thereof |
| CN119092590B (zh) * | 2024-08-27 | 2026-01-09 | 中国电子科技集团公司第十一研究所 | n p n中中双色碲镉汞红外光电探测器半导体器件及制备方法 |
| CN119379669B (zh) * | 2024-12-24 | 2025-04-04 | 杭州睿影科技有限公司 | 图像检测方法及计算机程序产品 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8878157B2 (en) * | 2011-10-20 | 2014-11-04 | University Of Kansas | Semiconductor-graphene hybrids formed using solution growth |
| JP5969843B2 (ja) * | 2012-07-17 | 2016-08-17 | 日本放送協会 | 有機光電変換素子、及び、これを含む受光素子 |
| US20150243826A1 (en) * | 2012-08-28 | 2015-08-27 | Northeastern University | Tunable heterojunction for multifunctional electronics and photovoltaics |
| US10354935B2 (en) * | 2014-06-10 | 2019-07-16 | Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) | Graphene structure and method for manufacturing the same |
| US9882153B2 (en) * | 2015-06-25 | 2018-01-30 | International Business Machines Corporation | Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same |
| KR102313052B1 (ko) * | 2016-02-02 | 2021-10-15 | 버세리엔 피엘씨 | 그래핀 기반 박막 적층체의 제조방법 및 상기 그래핀 기반 박막 적층체 |
| KR20190113820A (ko) * | 2017-02-08 | 2019-10-08 | 트리나미엑스 게엠베하 | 적어도 하나의 대상체의 광학적 검출을 위한 검출기 |
| US10777662B2 (en) * | 2017-11-22 | 2020-09-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor and manufacturing method thereof |
| WO2020184015A1 (ja) * | 2019-03-12 | 2020-09-17 | パナソニックＩｐマネジメント株式会社 | 撮像素子、撮像素子の製造方法及び撮像装置 |
| CN120358826A (zh) * | 2019-06-03 | 2025-07-22 | 蒂梅尔罗德科技有限责任公司 | 高效率石墨烯/宽带隙半导体异质结太阳能电池 |
| CN114041210B (zh) * | 2019-07-04 | 2024-07-12 | 三菱电机株式会社 | 电磁波检测器 |
-
2021
- 2021-03-30 CN CN202180096342.6A patent/CN117063298A/zh not_active Withdrawn
- 2021-03-30 JP JP2021560891A patent/JP7101905B1/ja active Active
- 2021-03-30 WO PCT/JP2021/013671 patent/WO2022208690A1/ja not_active Ceased
- 2021-03-30 US US18/280,674 patent/US20240154046A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20240154046A1 (en) | 2024-05-09 |
| CN117063298A (zh) | 2023-11-14 |
| JP7101905B1 (ja) | 2022-07-15 |
| WO2022208690A1 (ja) | 2022-10-06 |
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