CN117063298A - 电磁波检测器、电磁波检测器阵列及电磁波检测器的制造方法 - Google Patents

电磁波检测器、电磁波检测器阵列及电磁波检测器的制造方法 Download PDF

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Publication number
CN117063298A
CN117063298A CN202180096342.6A CN202180096342A CN117063298A CN 117063298 A CN117063298 A CN 117063298A CN 202180096342 A CN202180096342 A CN 202180096342A CN 117063298 A CN117063298 A CN 117063298A
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CN
China
Prior art keywords
layer
electromagnetic wave
wave detector
dimensional material
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN202180096342.6A
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English (en)
Chinese (zh)
Inventor
奥田聪志
小川新平
福岛昌一郎
岛谷政彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN117063298A publication Critical patent/CN117063298A/zh
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/241—Electrodes for devices having potential barriers comprising ring electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CN202180096342.6A 2021-03-30 2021-03-30 电磁波检测器、电磁波检测器阵列及电磁波检测器的制造方法 Withdrawn CN117063298A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/013671 WO2022208690A1 (ja) 2021-03-30 2021-03-30 電磁波検出器、電磁波検出器アレイ、および電磁波検出器の製造方法

Publications (1)

Publication Number Publication Date
CN117063298A true CN117063298A (zh) 2023-11-14

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180096342.6A Withdrawn CN117063298A (zh) 2021-03-30 2021-03-30 电磁波检测器、电磁波检测器阵列及电磁波检测器的制造方法

Country Status (4)

Country Link
US (1) US20240154046A1 (https=)
JP (1) JP7101905B1 (https=)
CN (1) CN117063298A (https=)
WO (1) WO2022208690A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119092590A (zh) * 2024-08-27 2024-12-06 中国电子科技集团公司第十一研究所 n p n中中双色碲镉汞红外光电探测器半导体器件及制备方法
CN119379669A (zh) * 2024-12-24 2025-01-28 杭州睿影科技有限公司 图像检测方法及计算机程序产品

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022235423A2 (en) * 2021-04-19 2022-11-10 Board Of Regents, The University Of Texas System Photoelectrodes and methods of making and use thereof

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US8878157B2 (en) * 2011-10-20 2014-11-04 University Of Kansas Semiconductor-graphene hybrids formed using solution growth
JP5969843B2 (ja) * 2012-07-17 2016-08-17 日本放送協会 有機光電変換素子、及び、これを含む受光素子
US20150243826A1 (en) * 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US10354935B2 (en) * 2014-06-10 2019-07-16 Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) Graphene structure and method for manufacturing the same
US9882153B2 (en) * 2015-06-25 2018-01-30 International Business Machines Corporation Organic monolayer passivation and silicon heterojunction photovoltaic devices using the same
KR102313052B1 (ko) * 2016-02-02 2021-10-15 버세리엔 피엘씨 그래핀 기반 박막 적층체의 제조방법 및 상기 그래핀 기반 박막 적층체
KR20190113820A (ko) * 2017-02-08 2019-10-08 트리나미엑스 게엠베하 적어도 하나의 대상체의 광학적 검출을 위한 검출기
US10777662B2 (en) * 2017-11-22 2020-09-15 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Thin film transistor and manufacturing method thereof
WO2020184015A1 (ja) * 2019-03-12 2020-09-17 パナソニックＩｐマネジメント株式会社 撮像素子、撮像素子の製造方法及び撮像装置
CN120358826A (zh) * 2019-06-03 2025-07-22 蒂梅尔罗德科技有限责任公司 高效率石墨烯/宽带隙半导体异质结太阳能电池
CN114041210B (zh) * 2019-07-04 2024-07-12 三菱电机株式会社 电磁波检测器

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119092590A (zh) * 2024-08-27 2024-12-06 中国电子科技集团公司第十一研究所 n p n中中双色碲镉汞红外光电探测器半导体器件及制备方法
CN119379669A (zh) * 2024-12-24 2025-01-28 杭州睿影科技有限公司 图像检测方法及计算机程序产品

Also Published As

Publication number Publication date
US20240154046A1 (en) 2024-05-09
JP7101905B1 (ja) 2022-07-15
JPWO2022208690A1 (https=) 2022-10-06
WO2022208690A1 (ja) 2022-10-06

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Application publication date: 20231114