JP7080660B2 - 光電変換装置、撮像システム、および、移動体 - Google Patents

光電変換装置、撮像システム、および、移動体 Download PDF

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Publication number
JP7080660B2
JP7080660B2 JP2018022400A JP2018022400A JP7080660B2 JP 7080660 B2 JP7080660 B2 JP 7080660B2 JP 2018022400 A JP2018022400 A JP 2018022400A JP 2018022400 A JP2018022400 A JP 2018022400A JP 7080660 B2 JP7080660 B2 JP 7080660B2
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transistor
circuit
photoelectric conversion
size
semiconductor substrate
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Japanese (ja)
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JP2019140531A (ja
JP2019140531A5 (enExample
Inventor
秀央 小林
慎也 中野
洋史 戸塚
大介 吉田
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Canon Inc
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Canon Inc
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Priority to JP2018022400A priority Critical patent/JP7080660B2/ja
Priority to US16/267,232 priority patent/US11134212B2/en
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Publication of JP2019140531A5 publication Critical patent/JP2019140531A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2018022400A 2018-02-09 2018-02-09 光電変換装置、撮像システム、および、移動体 Active JP7080660B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018022400A JP7080660B2 (ja) 2018-02-09 2018-02-09 光電変換装置、撮像システム、および、移動体
US16/267,232 US11134212B2 (en) 2018-02-09 2019-02-04 Photoelectric conversion device, imaging system, and moving unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018022400A JP7080660B2 (ja) 2018-02-09 2018-02-09 光電変換装置、撮像システム、および、移動体

Publications (3)

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JP2019140531A JP2019140531A (ja) 2019-08-22
JP2019140531A5 JP2019140531A5 (enExample) 2021-04-08
JP7080660B2 true JP7080660B2 (ja) 2022-06-06

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US (1) US11134212B2 (enExample)
JP (1) JP7080660B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102448030B1 (ko) * 2017-09-21 2022-09-28 삼성디스플레이 주식회사 표시장치
WO2021106732A1 (ja) 2019-11-29 2021-06-03 ソニーセミコンダクタソリューションズ株式会社 撮像装置および電子機器
CN112532899B (zh) * 2020-11-27 2023-06-30 京东方科技集团股份有限公司 光电转换电路、驱动方法、光电检测基板、光电检测装置
JP7414748B2 (ja) * 2021-01-22 2024-01-16 キヤノン株式会社 光電変換装置及び光検出システム
JP7610422B2 (ja) * 2021-02-03 2025-01-08 キヤノン株式会社 撮像装置、撮像システムおよび移動体
KR20240011679A (ko) * 2021-05-25 2024-01-26 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 전자 기기
JPWO2023153107A1 (enExample) * 2022-02-14 2023-08-17
CN118679571A (zh) * 2022-02-28 2024-09-20 索尼半导体解决方案公司 固体摄像装置和电子设备
US20250330727A1 (en) * 2022-06-15 2025-10-23 Sony Semiconductor Solutions Corporation Comparator, light detection element, and electronic device
KR20240147829A (ko) * 2023-03-30 2024-10-10 삼성디스플레이 주식회사 센서 및 그것을 포함하는 표시 장치
WO2025004580A1 (ja) * 2023-06-26 2025-01-02 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
CN119865717B (zh) * 2025-02-20 2025-10-28 中国科学院上海技术物理研究所 一种带斩波的cmos探测器读出装置和读出方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2010073520A1 (ja) 2008-12-26 2010-07-01 パナソニック株式会社 固体撮像デバイスおよびその製造方法
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法
JP2016184905A (ja) 2015-03-26 2016-10-20 キヤノン株式会社 光電変換装置、撮像システム、光電変換装置の駆動方法
WO2016194653A1 (ja) 2015-06-05 2016-12-08 ソニー株式会社 撮像素子、電子機器、並びに、製造装置および方法

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TWI289905B (en) 2002-07-23 2007-11-11 Fujitsu Ltd Image sensor and image sensor module
US7405757B2 (en) 2002-07-23 2008-07-29 Fujitsu Limited Image sensor and image sensor module
JP5223343B2 (ja) 2008-01-10 2013-06-26 株式会社ニコン 固体撮像素子
JP5685898B2 (ja) * 2010-01-08 2015-03-18 ソニー株式会社 半導体装置、固体撮像装置、およびカメラシステム
DE102012016868A1 (de) * 2012-08-25 2014-02-27 Audi Ag Verfahren und System zum Betreiben eines Fahrzeugs unter Überwachung der Fortbewegung des Fahrzeugs mit Hilfe einer Kameraeinrichtung einer mobilen Bedieneinrichtung
JP2014165396A (ja) * 2013-02-26 2014-09-08 Sony Corp 固体撮像装置および電子機器
JP2017168812A (ja) * 2016-03-10 2017-09-21 パナソニックＩｐマネジメント株式会社 撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010073520A1 (ja) 2008-12-26 2010-07-01 パナソニック株式会社 固体撮像デバイスおよびその製造方法
WO2016009832A1 (ja) 2014-07-14 2016-01-21 ソニー株式会社 比較器、ａｄ変換器、固体撮像装置、電子機器、および比較器の制御方法
JP2016184905A (ja) 2015-03-26 2016-10-20 キヤノン株式会社 光電変換装置、撮像システム、光電変換装置の駆動方法
WO2016194653A1 (ja) 2015-06-05 2016-12-08 ソニー株式会社 撮像素子、電子機器、並びに、製造装置および方法

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US20190253659A1 (en) 2019-08-15
US11134212B2 (en) 2021-09-28

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