JP7067424B2 - エッチング方法及びエッチング装置 - Google Patents
エッチング方法及びエッチング装置 Download PDFInfo
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- JP7067424B2 JP7067424B2 JP2018206819A JP2018206819A JP7067424B2 JP 7067424 B2 JP7067424 B2 JP 7067424B2 JP 2018206819 A JP2018206819 A JP 2018206819A JP 2018206819 A JP2018206819 A JP 2018206819A JP 7067424 B2 JP7067424 B2 JP 7067424B2
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- film
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- 238000005530 etching Methods 0.000 title claims description 182
- 238000000034 method Methods 0.000 title claims description 34
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- 239000011148 porous material Substances 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000004202 carbamide Substances 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 385
- 235000012431 wafers Nutrition 0.000 description 73
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 38
- 229920005591 polysilicon Polymers 0.000 description 38
- 229920002396 Polyurea Polymers 0.000 description 37
- 230000007246 mechanism Effects 0.000 description 30
- 238000010926 purge Methods 0.000 description 29
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 28
- 238000009834 vaporization Methods 0.000 description 19
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- 239000012948 isocyanate Substances 0.000 description 13
- 238000012360 testing method Methods 0.000 description 13
- 150000002513 isocyanates Chemical class 0.000 description 12
- 150000001412 amines Chemical class 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
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- 239000004065 semiconductor Substances 0.000 description 6
- 230000032258 transport Effects 0.000 description 5
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- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 2
- MGOLNIXAPIAKFM-UHFFFAOYSA-N 2-isocyanato-2-methylpropane Chemical compound CC(C)(C)N=C=O MGOLNIXAPIAKFM-UHFFFAOYSA-N 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- -1 amine compounds Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
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- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
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- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
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- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- KQWGXHWJMSMDJJ-UHFFFAOYSA-N cyclohexyl isocyanate Chemical compound O=C=NC1CCCCC1 KQWGXHWJMSMDJJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- ANJPRQPHZGHVQB-UHFFFAOYSA-N hexyl isocyanate Chemical compound CCCCCCN=C=O ANJPRQPHZGHVQB-UHFFFAOYSA-N 0.000 description 1
- XRURPHMPXJDCOO-UHFFFAOYSA-N iodine heptafluoride Chemical compound FI(F)(F)(F)(F)(F)F XRURPHMPXJDCOO-UHFFFAOYSA-N 0.000 description 1
- VJUJMLSNVYZCDT-UHFFFAOYSA-N iodine trifluoride Chemical compound FI(F)F VJUJMLSNVYZCDT-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- HNHVTXYLRVGMHD-UHFFFAOYSA-N n-butyl isocyanate Chemical compound CCCCN=C=O HNHVTXYLRVGMHD-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
Images
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- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW107144908A TWI813607B (zh) | 2017-12-27 | 2018-12-13 | 蝕刻方法及蝕刻裝置 |
| KR1020180167758A KR102184067B1 (ko) | 2017-12-27 | 2018-12-21 | 에칭 방법 및 에칭 장치 |
| US16/232,532 US10665470B2 (en) | 2017-12-27 | 2018-12-26 | Etching method and etching apparatus |
| CN201811610534.0A CN109979815B (zh) | 2017-12-27 | 2018-12-27 | 蚀刻方法和蚀刻装置 |
| US16/839,176 US20200234974A1 (en) | 2017-12-27 | 2020-04-03 | Etching Method and Etching Apparatus |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017251800 | 2017-12-27 | ||
| JP2017251800 | 2017-12-27 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019121784A JP2019121784A (ja) | 2019-07-22 |
| JP2019121784A5 JP2019121784A5 (enExample) | 2021-07-26 |
| JP7067424B2 true JP7067424B2 (ja) | 2022-05-16 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018206819A Active JP7067424B2 (ja) | 2017-12-27 | 2018-11-01 | エッチング方法及びエッチング装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7067424B2 (enExample) |
| TW (1) | TWI813607B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102184067B1 (ko) * | 2017-12-27 | 2020-11-27 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
| JP7419783B2 (ja) * | 2019-12-11 | 2024-01-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7521230B2 (ja) * | 2020-03-30 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7521229B2 (ja) * | 2020-03-30 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7472634B2 (ja) * | 2020-04-28 | 2024-04-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006253245A (ja) | 2005-03-09 | 2006-09-21 | Tokyo Electron Ltd | 微細パターン形成方法 |
| JP2008535212A (ja) | 2005-03-22 | 2008-08-28 | エヌエックスピー ビー ヴィ | 集積回路ダイ上への導電性配線部構造の形成方法、導電性配線部および集積回路ダイ |
| JP2010004049A (ja) | 2008-06-23 | 2010-01-07 | Applied Materials Inc | 低誘電率膜特性の回復 |
| JP2015061073A (ja) | 2013-09-17 | 2015-03-30 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | 処理前の多孔質基板の保護 |
| JP2016207768A (ja) | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
| WO2018159783A1 (ja) | 2017-03-03 | 2018-09-07 | レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 多孔質膜封孔方法および多孔質膜封孔用材料 |
| JP2018529225A (ja) | 2015-08-31 | 2018-10-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造物をエッチングするための窒素含有化合物 |
-
2018
- 2018-11-01 JP JP2018206819A patent/JP7067424B2/ja active Active
- 2018-12-13 TW TW107144908A patent/TWI813607B/zh active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006253245A (ja) | 2005-03-09 | 2006-09-21 | Tokyo Electron Ltd | 微細パターン形成方法 |
| JP2008535212A (ja) | 2005-03-22 | 2008-08-28 | エヌエックスピー ビー ヴィ | 集積回路ダイ上への導電性配線部構造の形成方法、導電性配線部および集積回路ダイ |
| JP2010004049A (ja) | 2008-06-23 | 2010-01-07 | Applied Materials Inc | 低誘電率膜特性の回復 |
| JP2015061073A (ja) | 2013-09-17 | 2015-03-30 | アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ | 処理前の多孔質基板の保護 |
| JP2016207768A (ja) | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | 多孔質膜をエッチングする方法 |
| JP2018529225A (ja) | 2015-08-31 | 2018-10-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造物をエッチングするための窒素含有化合物 |
| WO2018159783A1 (ja) | 2017-03-03 | 2018-09-07 | レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 多孔質膜封孔方法および多孔質膜封孔用材料 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201939613A (zh) | 2019-10-01 |
| TWI813607B (zh) | 2023-09-01 |
| JP2019121784A (ja) | 2019-07-22 |
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