TWI813607B - 蝕刻方法及蝕刻裝置 - Google Patents
蝕刻方法及蝕刻裝置 Download PDFInfo
- Publication number
- TWI813607B TWI813607B TW107144908A TW107144908A TWI813607B TW I813607 B TWI813607 B TW I813607B TW 107144908 A TW107144908 A TW 107144908A TW 107144908 A TW107144908 A TW 107144908A TW I813607 B TWI813607 B TW I813607B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- gas
- etching
- supplied
- forming gas
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 187
- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 230000002265 prevention Effects 0.000 claims abstract description 6
- 239000011148 porous material Substances 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims description 109
- 238000010438 heat treatment Methods 0.000 claims description 27
- 239000004202 carbamide Substances 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 392
- 235000012431 wafers Nutrition 0.000 description 80
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 39
- 229920002396 Polyurea Polymers 0.000 description 38
- 230000007246 mechanism Effects 0.000 description 32
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 29
- 238000012546 transfer Methods 0.000 description 20
- 238000009834 vaporization Methods 0.000 description 18
- 230000008016 vaporization Effects 0.000 description 18
- 238000012360 testing method Methods 0.000 description 13
- 150000001412 amines Chemical class 0.000 description 12
- 239000012948 isocyanate Substances 0.000 description 12
- 150000002513 isocyanates Chemical class 0.000 description 11
- 238000011144 upstream manufacturing Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 9
- 238000011156 evaluation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- MGOLNIXAPIAKFM-UHFFFAOYSA-N 2-isocyanato-2-methylpropane Chemical compound CC(C)(C)N=C=O MGOLNIXAPIAKFM-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- -1 for example Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 2
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- QFTYSVGGYOXFRQ-UHFFFAOYSA-N dodecane-1,12-diamine Chemical compound NCCCCCCCCCCCCN QFTYSVGGYOXFRQ-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 2
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 2
- XSCLFFBWRKTMTE-UHFFFAOYSA-N 1,3-bis(isocyanatomethyl)cyclohexane Chemical compound O=C=NCC1CCCC(CN=C=O)C1 XSCLFFBWRKTMTE-UHFFFAOYSA-N 0.000 description 1
- 229940008841 1,6-hexamethylene diisocyanate Drugs 0.000 description 1
- CEBDXRXVGUQZJK-UHFFFAOYSA-N 2-methyl-1-benzofuran-7-carboxylic acid Chemical compound C1=CC(C(O)=O)=C2OC(C)=CC2=C1 CEBDXRXVGUQZJK-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KYIMHWNKQXQBDG-UHFFFAOYSA-N N=C=O.N=C=O.CCCCCC Chemical compound N=C=O.N=C=O.CCCCCC KYIMHWNKQXQBDG-UHFFFAOYSA-N 0.000 description 1
- QLBRROYTTDFLDX-UHFFFAOYSA-N [3-(aminomethyl)cyclohexyl]methanamine Chemical compound NCC1CCCC(CN)C1 QLBRROYTTDFLDX-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- KQWGXHWJMSMDJJ-UHFFFAOYSA-N cyclohexyl isocyanate Chemical compound O=C=NC1CCCCC1 KQWGXHWJMSMDJJ-UHFFFAOYSA-N 0.000 description 1
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- ANJPRQPHZGHVQB-UHFFFAOYSA-N hexyl isocyanate Chemical compound CCCCCCN=C=O ANJPRQPHZGHVQB-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- XRURPHMPXJDCOO-UHFFFAOYSA-N iodine heptafluoride Chemical compound FI(F)(F)(F)(F)(F)F XRURPHMPXJDCOO-UHFFFAOYSA-N 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- HNHVTXYLRVGMHD-UHFFFAOYSA-N n-butyl isocyanate Chemical compound CCCCN=C=O HNHVTXYLRVGMHD-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- FQFKTKUFHWNTBN-UHFFFAOYSA-N trifluoro-$l^{3}-bromane Chemical compound FBr(F)F FQFKTKUFHWNTBN-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-251800 | 2017-12-27 | ||
| JP2017251800 | 2017-12-27 | ||
| JP2018-206819 | 2018-11-01 | ||
| JP2018206819A JP7067424B2 (ja) | 2017-12-27 | 2018-11-01 | エッチング方法及びエッチング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201939613A TW201939613A (zh) | 2019-10-01 |
| TWI813607B true TWI813607B (zh) | 2023-09-01 |
Family
ID=67308019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107144908A TWI813607B (zh) | 2017-12-27 | 2018-12-13 | 蝕刻方法及蝕刻裝置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7067424B2 (enExample) |
| TW (1) | TWI813607B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102184067B1 (ko) * | 2017-12-27 | 2020-11-27 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법 및 에칭 장치 |
| JP7419783B2 (ja) * | 2019-12-11 | 2024-01-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7521230B2 (ja) * | 2020-03-30 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7521229B2 (ja) * | 2020-03-30 | 2024-07-24 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
| JP7472634B2 (ja) * | 2020-04-28 | 2024-04-23 | 東京エレクトロン株式会社 | エッチング方法及びエッチング装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201705272A (zh) * | 2015-04-20 | 2017-02-01 | 東京威力科創股份有限公司 | 多孔質膜之蝕刻方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4522892B2 (ja) * | 2005-03-09 | 2010-08-11 | 東京エレクトロン株式会社 | 微細パターン形成方法 |
| ATE511702T1 (de) * | 2005-03-22 | 2011-06-15 | Nxp Bv | Seitenwandporenabdichtung für nichtleiter mit niedriger dielektrizitätskonstante |
| US8058183B2 (en) * | 2008-06-23 | 2011-11-15 | Applied Materials, Inc. | Restoring low dielectric constant film properties |
| EP2849212B1 (en) * | 2013-09-17 | 2018-05-23 | IMEC vzw | Protection of porous substrates before treatment |
| US9659788B2 (en) * | 2015-08-31 | 2017-05-23 | American Air Liquide, Inc. | Nitrogen-containing compounds for etching semiconductor structures |
| JP6875152B2 (ja) * | 2017-03-03 | 2021-05-19 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 多孔質膜封孔方法および多孔質膜封孔用材料 |
-
2018
- 2018-11-01 JP JP2018206819A patent/JP7067424B2/ja active Active
- 2018-12-13 TW TW107144908A patent/TWI813607B/zh active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201705272A (zh) * | 2015-04-20 | 2017-02-01 | 東京威力科創股份有限公司 | 多孔質膜之蝕刻方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7067424B2 (ja) | 2022-05-16 |
| TW201939613A (zh) | 2019-10-01 |
| JP2019121784A (ja) | 2019-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI813607B (zh) | 蝕刻方法及蝕刻裝置 | |
| US20200234974A1 (en) | Etching Method and Etching Apparatus | |
| TWI864172B (zh) | 蝕刻方法及蝕刻裝置 | |
| TWI829892B (zh) | 蝕刻方法及蝕刻裝置 | |
| TWI791741B (zh) | 蝕刻方法 | |
| US11581192B2 (en) | Etching method and etching apparatus | |
| JP7521230B2 (ja) | エッチング方法及びエッチング装置 | |
| TWI871462B (zh) | 蝕刻方法及蝕刻裝置 | |
| KR102608729B1 (ko) | 에칭 방법 및 에칭 장치 | |
| TWI905379B (zh) | 蝕刻方法及蝕刻裝置 |