JP7064438B2 - 切削工具およびその製造方法 - Google Patents
切削工具およびその製造方法 Download PDFInfo
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- JP7064438B2 JP7064438B2 JP2018540090A JP2018540090A JP7064438B2 JP 7064438 B2 JP7064438 B2 JP 7064438B2 JP 2018540090 A JP2018540090 A JP 2018540090A JP 2018540090 A JP2018540090 A JP 2018540090A JP 7064438 B2 JP7064438 B2 JP 7064438B2
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Description
ところで近年、鋼、焼入鋼または難削鋳鋼に対する高能率加工および高精度加工の要求が高まっている。しかしながら、従来の切削工具では、このような被加工材を切削するときに被膜が剥離しやすく、優れた加工精度を得ることができない。
[本開示の効果]
上記によれば、被膜の耐剥離性に優れた切削工具を提供することができる。
最初に本発明の実施態様を列記して説明する。なお、本明細書において「M~N」という形式の表記は、範囲の上限下限(すなわちM以上N以下)を意味し、Mにおいて単位の記載がなく、Nにおいてのみ単位が記載されている場合、Mの単位とNの単位とは同じである。
以下、本発明の一実施形態(以下「本実施形態」と記す)について説明する。ただし、本実施形態はこれらに限定されるものではない。なお以下の実施の形態の説明に用いられる図面において、同一の参照符号は、同一部分または相当部分を表わす。また、本明細書において化合物などを化学式で表す場合、原子比を特に限定しないときは従来公知のあらゆる原子比を含むものとし、必ずしも化学量論的範囲のものに限定されるものではない。たとえば「AlCrN」と記載されている場合、AlCrNを構成する原子数の比はAl:Cr:N=0.5:0.5:1に限られず、従来公知のあらゆる原子比が含まれる。
図1は、本実施形態に係る切削工具の構成の一例を示す部分断面図である。図1に示されるように、切削工具10は、基材11と、基材11に接して基材11を被覆する被膜12とを備える。被膜12は、基材11の全面を被覆することが好ましいが、基材11の一部がこの被膜12で被覆されていなかったり、被膜12の構成が部分的に異なっていたりしたとしても本発明の範囲を逸脱するものではない。
基材11は、cBNと結合材とからなるcBN焼結体である。cBN焼結体は、たとえば30~90体積%のcBNと残部の結合材とからなる。
被膜12は、基材11の直上に形成され、基材11と接して基材11を被覆する。被膜12中の酸素原子(O)の量(以下、「酸素量」ともいう。)は、基材11との界面も含めて、0.040質量%以下であり、好ましくは0.010質量%以下であり、さらに好ましくは0.005質量%以下である。なお、被膜中の酸素量の下限は特に限定されるものではなく、理想的には0質量%であるが、0.001質量%未満の場合には製造上困難となり高コストとなる。
本実施形態の切削工具の製造方法は、上述の切削工具を製造する方法であって、cBN焼結体である基材をPVD(Physical Vapor Deposition)装置のチャンバ内に設置し、不活性ガスイオンを基材の表面に照射することによって、基材の表面をクリーニングする第1工程(ボンバード工程)と、第1工程の後に、物理蒸着法(PVD法)を用いて、チャンバ内に設置された基材の表面上にセラミックスの被膜を形成する第2工程(成膜工程)とを備える。第1工程および第2工程において、チャンバ内の酸素分圧と水分圧との合計分圧は5×10-3Pa以下である。以下、各工程について詳述する。
市販のPVD装置のチャンバ内にcBN焼結体である基材を設置する。チャンバには真空ポンプが接続され、チャンバ内が減圧される。さらに、チャンバにはガス分圧制御装置が接続され、チャンバ内の酸素分圧および水分圧が制御される。ガス分圧制御装置として、公知のガス精製装置および酸素分圧制御装置などを用いることができる。
次に、真空ポンプを動作させてチャンバ内から不活性ガスを排気する。その後、ガス分圧制御装置を動作させて、チャンバ内の酸素分圧と水分圧との合計分圧が5×10-3Pa以下の第2設定値になるまで待機する。なお、第2設定値は、第1設定値と同一であってもよいし、異なっていてもよい。
《ボンバード工程》
ISO規格のCNGA120408の形状を有する市販のcBN焼結体工具(住友電気工業株式会社製「BNX20」)を、アークイオンプレーティング方式のPVD装置のチャンバ内に設置した。当該cBN焼結体工具において、cBNは60体積%である。また、cBN焼結体工具は、結合材としてTiN、Alを含む。
次に、チャンバ内を500℃まで加熱し、Arガスを排気した後、反応性ガスとしてのN2ガスを300cm3/分の流速でチャンバ内に導入するとともに、ガス精製装置を動作させて、チャンバ内の酸素分圧がCPa、水分圧がDPaになるまで待機した。チャンバ内の酸素分圧がCPa、水分圧がDPaに到達したときにガス精製装置による精製機能を停止し、チャンバ内の酸素分圧をCPa、水分圧をDPaに維持させた。その後、cBN焼結体工具に-35Vの電圧を印加し、真空アーク放電(アーク電流100A)によってTiAl合金(TiとAlとの組成比1:1)のターゲットを蒸発イオン化させ、当該気化ガスとN2ガスとを反応させて、cBN焼結体工具の表面にTiAlNの被膜を形成した。
ガス精製装置を用いない点を除いて試料No.1~3と同じ方法により、試料No.4の切削工具を作製した。すなわち、試料No.1~3よりもチャンバ内の酸素分圧および水分圧が高い状態で、試料No.4の切削工具を作製した。
《ボンバード工程》
試料No.1~4と同じcBN焼結体工具を、アークイオンプレーティング方式のPVD装置のチャンバ内に設置した。チャンバには真空ポンプおよび酸素分圧制御装置(エスティー・ラボ株式会社製「SiOC-200C」)をそれぞれ別の配管によって接続した。チャンバと酸素分圧制御装置とを接続する配管には弁を設けた。酸素分圧制御装置は、上記のガス精製装置よりも酸素分圧をより低く制御することができる装置である。そして、真空ポンプおよび酸素分圧制御装置を動作させることにより、チャンバ内を真空排気し、チャンバ内の真空度が10-4Pa以下、酸素分圧がAPa、水分圧がBPaになるまで待機した。その後、Arガスをチャンバ内に導入し、2Paの雰囲気中でcBN焼結体工具に-1000Vの電圧を印加して、cBN焼結体工具の表面を洗浄した。洗浄中においてチャンバ内の酸素分圧がAPa、水分圧がBPaで安定するように、チャンバ内の酸素分圧がAPa、水分圧がBPaに到達したときに酸素分圧制御装置とチャンバとの間の弁を閉じた。
次に、チャンバ内を500℃まで加熱し、Arガスを排気した後、反応性ガスとしてのN2ガスを300cm3/分の流速でチャンバ内に導入するとともに、酸素分圧制御装置を動作させて、チャンバ内の酸素分圧がCPa、水分圧がDPaになるまで待機した。チャンバ内の酸素分圧がCPa、水分圧がDPaに到達したときに酸素分圧制御装置とチャンバとの間の弁を閉じ、チャンバ内の酸素分圧をCPa、水分圧をDPaに維持させた。その後、cBN焼結体工具に-35Vの電圧を印加し、真空アーク放電(アーク電流100A)によってAlCr合金(AlとCrとの組成比1:1)のターゲットを蒸発イオン化させ、当該気化ガスとN2ガスとを反応させて、cBN焼結体工具の表面にAlCrNの被膜を形成した。
酸素分圧制御装置を用いない点を除いて試料No.5,6と同じ方法により、試料No.7の切削工具を作製した。すなわち、試料No.5,6よりもチャンバ内の酸素分圧および水分圧が高い状態で、試料No.7の切削工具を作製した。
試料No.1~7の切削工具における破断面を走査型電子顕微鏡(日本電子株式会社製「JSM-7800F」)を用いて撮像し、刃先近傍の5カ所における被膜の厚みを測定し、その平均値を算出した。
エネルギー分散型X線分析装置(アメテック株式会社製「Pegasus」)を用いて、被膜の表面にX線を照射し、被膜中の酸素量の質量百分率を測定した。エネルギー分散型X線分析装置の測定条件は、加速電圧15eVとした。また、被膜の表面の5カ所における酸素量を測定し、その平均値を取った。
試料No.1~7の切削工具をそれぞれ用いて、次に示す切削条件に従って0.5秒間切削し、1秒間切削工具を被削材から離すサイクルを640回(切削距離0.8kmに相当)繰り返した。そして、走査型電子顕微鏡(日本電子株式会社製「JSM-7800F」)を用いて切削工具の逃げ面の反射電子像を撮像し、剥離領域の面積(以下、剥離面積という。)を画像解析ソフト(三谷商事株式会社製「WinROOF」)を用いて算出した。さらに、剥離面積が5000μm2を超えるまで上記のサイクルを繰り返し、剥離面積が5000μm2となるときの切削距離を寿命距離として算出した。具体的には、横軸を切削距離、縦軸を剥離面積とするグラフにおいて、剥離面積が5000μm2を超えたときの点と原点とを結ぶ直線と、剥離面積5000μm2の直線との交点を特定し、特定した交点における切削距離を寿命距離とした。
被削材:浸炭焼入鋼(SCM415H、硬度HRC60)
切削速度:Vc=150m/分
送り量:f=0.2mm/rev
切込み:ap=0.2mm
切削油:有(wet状態)。
表1は、試料No.1~7の切削工具の各々について、ボンバード工程における酸素分圧Aおよび水分圧Bと、成膜工程における酸素分圧Cおよび水分圧Dと、被膜の厚みと、被膜中の酸素量と、0.8km切削時の剥離面積と、寿命距離との測定結果を示す。
Claims (6)
- 基材と、前記基材に接して前記基材を被覆する被膜とを備える切削工具であって、
前記基材は立方晶窒化硼素焼結体であり、
前記被膜はセラミックスであり、
前記被膜中の酸素量は0.001質量%以上0.040質量%以下である、切削工具。 - 前記被膜中の酸素量は0.001質量%以上0.010質量%以下である、請求項1に記載の切削工具。
- 前記立方晶窒化硼素焼結体は、30体積%以上90体積%以下の立方晶窒化硼素と残部の結合材とからなり、
前記結合材は、周期律表4、5、6族元素およびSiの中から選択される少なくとも1種の元素と、N、C、B、Oの中から選択される少なくとも1種とからなる化合物およびその固溶体の中から選択される少なくとも1種と、AlおよびAl化合物の少なくとも一方と、不可避不純物とからなり、
前記被膜の厚みは0.05μm以上5μm以下であり、
前記セラミックスは、周期律表4、5、6族元素、AlおよびSiの中から選択される少なくとも1種の元素と、CおよびNの中から選択される少なくとも1種とからなる少なくとも1種の化合物を含む、請求項1または請求項2に記載の切削工具。 - 立方晶窒化硼素焼結体である基材をチャンバ内に設置し、不活性ガスイオンを前記基材の表面に照射することによって、前記基材の表面をクリーニングする第1工程と、
前記第1工程の後に、物理蒸着法を用いて、前記チャンバ内に設置された前記基材の表面上にセラミックスの被膜を形成する第2工程とを備え、
前記第1工程および前記第2工程において、前記チャンバ内の酸素分圧と水分圧との合計分圧は5×10-3Pa以下である、切削工具の製造方法。 - 前記第1工程および前記第2工程において、前記チャンバ内の酸素分圧と水分圧との合計分圧は6×10-4Pa以下である、請求項4に記載の切削工具の製造方法。
- 前記第1工程および前記第2工程において、前記チャンバ内の酸素分圧は1×10-15Pa以下である、請求項5に記載の切削工具の製造方法。
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