JP7053502B2 - 無線周波数用途のための構造 - Google Patents

無線周波数用途のための構造 Download PDF

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Publication number
JP7053502B2
JP7053502B2 JP2018564318A JP2018564318A JP7053502B2 JP 7053502 B2 JP7053502 B2 JP 7053502B2 JP 2018564318 A JP2018564318 A JP 2018564318A JP 2018564318 A JP2018564318 A JP 2018564318A JP 7053502 B2 JP7053502 B2 JP 7053502B2
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substrate
radio frequency
ultra
zone
silicon
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Japanese (ja)
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JP2019527925A (ja
JP2019527925A5 (https=
Inventor
デボネ エリック
ラドゥ イオヌット
コノンチュク オレグ
ラスキン ジャン－ピエール
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers

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  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Element Separation (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP2018564318A 2016-06-08 2017-06-06 無線周波数用途のための構造 Active JP7053502B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1655266 2016-06-08
FR1655266A FR3052592B1 (fr) 2016-06-08 2016-06-08 Structure pour applications radiofrequences
PCT/FR2017/051418 WO2017212160A1 (fr) 2016-06-08 2017-06-06 Structure pour applications radiofrequences

Publications (3)

Publication Number Publication Date
JP2019527925A JP2019527925A (ja) 2019-10-03
JP2019527925A5 JP2019527925A5 (https=) 2020-07-16
JP7053502B2 true JP7053502B2 (ja) 2022-04-12

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JP2018564318A Active JP7053502B2 (ja) 2016-06-08 2017-06-06 無線周波数用途のための構造

Country Status (8)

Country Link
US (3) US10943815B2 (https=)
EP (1) EP3469627B1 (https=)
JP (1) JP7053502B2 (https=)
KR (1) KR102369549B1 (https=)
FR (1) FR3052592B1 (https=)
SG (2) SG10201913097SA (https=)
TW (1) TWI733831B (https=)
WO (1) WO2017212160A1 (https=)

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FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences
FR3062517B1 (fr) 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
CN110828962B (zh) 2018-08-09 2021-08-03 财团法人工业技术研究院 天线阵列模块及其制造方法
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
FR3086096B1 (fr) * 2018-09-14 2021-08-27 Soitec Silicon On Insulator Procede de realisation d'un substrat avance pour une integration hybride
US11661337B2 (en) * 2020-10-19 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Comb electrode release process for MEMS structure
US11658206B2 (en) * 2020-11-13 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench structure for a capacitive device
US20220406649A1 (en) * 2021-06-22 2022-12-22 Texas Instruments Incorporated Passive component q factor enhancement with elevated resistance region of substrate
FR3126541B1 (fr) 2021-09-02 2025-01-10 Commissariat Energie Atomique Procédé de fabrication d’une structure multicouche
FR3134478B1 (fr) * 2022-04-06 2025-07-25 Commissariat Energie Atomique Substrat comprenant des vias et procédés de fabrication associés
FR3142289A1 (fr) * 2022-11-23 2024-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’un empilement comprenant une couche isolante
CN116902904A (zh) * 2023-07-14 2023-10-20 绍兴中芯集成电路制造股份有限公司 一种mems器件、mems器件的制备方法和电子装置
US20250125215A1 (en) * 2023-10-12 2025-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device including a high thermal conductivity electrically insulating structure
WO2026039452A1 (en) * 2024-08-12 2026-02-19 Caporus Technologies, Inc. Capacitive structures and porous semiconductors in engineered substrates

Citations (1)

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JP2013537715A (ja) 2010-08-02 2013-10-03 インターナショナル・ビジネス・マシーンズ・コーポレーション 電荷層を軽減した集積回路構造およびこれを形成する方法

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JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6391792B1 (en) * 2000-05-18 2002-05-21 Taiwan Semiconductor Manufacturing Co., Ltd Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer
WO2009085319A1 (en) * 2007-12-29 2009-07-09 Saint-Gobain Cermics & Plastics, Inc. Coaxial ceramic igniter and methods of fabrication
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CN102169552A (zh) * 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 射频识别标签及其制造方法
US9070585B2 (en) * 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
CN103022054B (zh) * 2012-12-21 2016-12-28 上海华虹宏力半导体制造有限公司 绝缘体上硅射频器件及绝缘体上硅衬底
CN103077949B (zh) * 2013-01-28 2016-09-14 上海华虹宏力半导体制造有限公司 绝缘体上硅射频器件及其制作方法
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FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences

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JP2013537715A (ja) 2010-08-02 2013-10-03 インターナショナル・ビジネス・マシーンズ・コーポレーション 電荷層を軽減した集積回路構造およびこれを形成する方法

Also Published As

Publication number Publication date
JP2019527925A (ja) 2019-10-03
US11923239B2 (en) 2024-03-05
FR3052592B1 (fr) 2018-05-18
SG11201810415PA (en) 2018-12-28
SG10201913097SA (en) 2020-02-27
US20190157137A1 (en) 2019-05-23
US10943815B2 (en) 2021-03-09
US20220277988A1 (en) 2022-09-01
TW201806175A (zh) 2018-02-16
US11367650B2 (en) 2022-06-21
TWI733831B (zh) 2021-07-21
EP3469627A1 (fr) 2019-04-17
KR20190017762A (ko) 2019-02-20
KR102369549B1 (ko) 2022-03-04
EP3469627B1 (fr) 2020-07-29
FR3052592A1 (fr) 2017-12-15
US20210143053A1 (en) 2021-05-13
WO2017212160A1 (fr) 2017-12-14

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