KR102369549B1 - 무선 주파수 애플리케이션들을 위한 구조 - Google Patents

무선 주파수 애플리케이션들을 위한 구조 Download PDF

Info

Publication number
KR102369549B1
KR102369549B1 KR1020187034754A KR20187034754A KR102369549B1 KR 102369549 B1 KR102369549 B1 KR 102369549B1 KR 1020187034754 A KR1020187034754 A KR 1020187034754A KR 20187034754 A KR20187034754 A KR 20187034754A KR 102369549 B1 KR102369549 B1 KR 102369549B1
Authority
KR
South Korea
Prior art keywords
substrate
radio frequency
frequency devices
trenches
microelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187034754A
Other languages
English (en)
Korean (ko)
Other versions
KR20190017762A (ko
Inventor
에릭 데보네
이오누트 라두
올레그 코논추크
장-피에르 라스킨
Original Assignee
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소이텍 filed Critical 소이텍
Publication of KR20190017762A publication Critical patent/KR20190017762A/ko
Application granted granted Critical
Publication of KR102369549B1 publication Critical patent/KR102369549B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H01L21/84—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H01L21/02002—
    • H01L21/76264—
    • H01L27/1203—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/061—Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Micromachines (AREA)
  • Element Separation (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
KR1020187034754A 2016-06-08 2017-06-06 무선 주파수 애플리케이션들을 위한 구조 Active KR102369549B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1655266 2016-06-08
FR1655266A FR3052592B1 (fr) 2016-06-08 2016-06-08 Structure pour applications radiofrequences
PCT/FR2017/051418 WO2017212160A1 (fr) 2016-06-08 2017-06-06 Structure pour applications radiofrequences

Publications (2)

Publication Number Publication Date
KR20190017762A KR20190017762A (ko) 2019-02-20
KR102369549B1 true KR102369549B1 (ko) 2022-03-04

Family

ID=56511794

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187034754A Active KR102369549B1 (ko) 2016-06-08 2017-06-06 무선 주파수 애플리케이션들을 위한 구조

Country Status (8)

Country Link
US (3) US10943815B2 (https=)
EP (1) EP3469627B1 (https=)
JP (1) JP7053502B2 (https=)
KR (1) KR102369549B1 (https=)
FR (1) FR3052592B1 (https=)
SG (2) SG10201913097SA (https=)
TW (1) TWI733831B (https=)
WO (1) WO2017212160A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences
FR3062517B1 (fr) 2017-02-02 2019-03-15 Soitec Structure pour application radiofrequence
CN110828962B (zh) 2018-08-09 2021-08-03 财团法人工业技术研究院 天线阵列模块及其制造方法
US10658474B2 (en) * 2018-08-14 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming thin semiconductor-on-insulator (SOI) substrates
FR3086096B1 (fr) * 2018-09-14 2021-08-27 Soitec Silicon On Insulator Procede de realisation d'un substrat avance pour une integration hybride
US11661337B2 (en) * 2020-10-19 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Comb electrode release process for MEMS structure
US11658206B2 (en) * 2020-11-13 2023-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Deep trench structure for a capacitive device
US20220406649A1 (en) * 2021-06-22 2022-12-22 Texas Instruments Incorporated Passive component q factor enhancement with elevated resistance region of substrate
FR3126541B1 (fr) 2021-09-02 2025-01-10 Commissariat Energie Atomique Procédé de fabrication d’une structure multicouche
FR3134478B1 (fr) * 2022-04-06 2025-07-25 Commissariat Energie Atomique Substrat comprenant des vias et procédés de fabrication associés
FR3142289A1 (fr) * 2022-11-23 2024-05-24 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d’un empilement comprenant une couche isolante
CN116902904A (zh) * 2023-07-14 2023-10-20 绍兴中芯集成电路制造股份有限公司 一种mems器件、mems器件的制备方法和电子装置
US20250125215A1 (en) * 2023-10-12 2025-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device including a high thermal conductivity electrically insulating structure
WO2026039452A1 (en) * 2024-08-12 2026-02-19 Caporus Technologies, Inc. Capacitive structures and porous semiconductors in engineered substrates

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120266116A1 (en) 2008-08-07 2012-10-18 International Business Machines Corporation Integrated millimeter wave antenna and transceiver on a substrate
JP2013537715A (ja) 2010-08-02 2013-10-03 インターナショナル・ビジネス・マシーンズ・コーポレーション 電荷層を軽減した集積回路構造およびこれを形成する方法
US20140175598A1 (en) * 2012-12-21 2014-06-26 Shanghai Huahong Grace Semiconductor Manufacturing Corporation Silicon-on-insulator radio frequency device and silicon-on-insulator substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3582890B2 (ja) * 1995-05-23 2004-10-27 株式会社日立製作所 半導体装置
US6312568B2 (en) * 1999-12-07 2001-11-06 Applied Materials, Inc. Two-step AIN-PVD for improved film properties
KR100388011B1 (ko) * 2000-01-17 2003-06-18 삼성전기주식회사 ＧａＮ박막 ＳＡＷ필터 및 이를 제조하는 방법
US6391792B1 (en) * 2000-05-18 2002-05-21 Taiwan Semiconductor Manufacturing Co., Ltd Multi-step chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layer
WO2009085319A1 (en) * 2007-12-29 2009-07-09 Saint-Gobain Cermics & Plastics, Inc. Coaxial ceramic igniter and methods of fabrication
CN102169552A (zh) * 2011-01-28 2011-08-31 上海集成电路研发中心有限公司 射频识别标签及其制造方法
US9070585B2 (en) * 2012-02-24 2015-06-30 Semiconductor Components Industries, Llc Electronic device including a trench and a conductive structure therein and a process of forming the same
CN103077949B (zh) * 2013-01-28 2016-09-14 上海华虹宏力半导体制造有限公司 绝缘体上硅射频器件及其制作方法
US9373613B2 (en) * 2013-12-31 2016-06-21 Skyworks Solutions, Inc. Amplifier voltage limiting using punch-through effect
EP3024020A1 (en) * 2014-11-19 2016-05-25 Nxp B.V. Semiconductor device and method
CN107660313B (zh) * 2015-06-26 2022-09-13 英特尔公司 在衬底上的氮化镓(GaN)晶体管结构
US10411067B2 (en) * 2015-12-21 2019-09-10 Intel Corporation Integrated RF frontend structures
FR3052592B1 (fr) * 2016-06-08 2018-05-18 Soitec Structure pour applications radiofrequences

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120266116A1 (en) 2008-08-07 2012-10-18 International Business Machines Corporation Integrated millimeter wave antenna and transceiver on a substrate
JP2013537715A (ja) 2010-08-02 2013-10-03 インターナショナル・ビジネス・マシーンズ・コーポレーション 電荷層を軽減した集積回路構造およびこれを形成する方法
US20140175598A1 (en) * 2012-12-21 2014-06-26 Shanghai Huahong Grace Semiconductor Manufacturing Corporation Silicon-on-insulator radio frequency device and silicon-on-insulator substrate

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
2005IEEE*
비특허문헌 1, 9TH IEEE WORKSHOP ON SIGNAL PROPAGATION ON INTERCONNECTS, 2005., 2005.08.29*
비특허문헌 2, 2013 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2014.04.17

Also Published As

Publication number Publication date
JP2019527925A (ja) 2019-10-03
US11923239B2 (en) 2024-03-05
FR3052592B1 (fr) 2018-05-18
SG11201810415PA (en) 2018-12-28
SG10201913097SA (en) 2020-02-27
US20190157137A1 (en) 2019-05-23
US10943815B2 (en) 2021-03-09
US20220277988A1 (en) 2022-09-01
TW201806175A (zh) 2018-02-16
US11367650B2 (en) 2022-06-21
TWI733831B (zh) 2021-07-21
EP3469627A1 (fr) 2019-04-17
KR20190017762A (ko) 2019-02-20
EP3469627B1 (fr) 2020-07-29
FR3052592A1 (fr) 2017-12-15
US20210143053A1 (en) 2021-05-13
WO2017212160A1 (fr) 2017-12-14
JP7053502B2 (ja) 2022-04-12

Similar Documents

Publication Publication Date Title
KR102369549B1 (ko) 무선 주파수 애플리케이션들을 위한 구조
JP6643316B2 (ja) 無線周波アプリケーションの構造
US10250282B2 (en) Structure for radiofrequency applications
US12418120B2 (en) Structure for radio frequency applications
JP2018501651A5 (https=)
US20200058737A1 (en) Soi substrate, semiconductor device and method for manufacturing the same
JP7293537B2 (ja) 高周波用途のための基板及び関連付けられた製造方法
TWI741217B (zh) 複合半導體基底、半導體裝置及其製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 5