JP7049894B2 - ボロン系膜の成膜方法および成膜装置 - Google Patents

ボロン系膜の成膜方法および成膜装置 Download PDF

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JP7049894B2
JP7049894B2 JP2018072625A JP2018072625A JP7049894B2 JP 7049894 B2 JP7049894 B2 JP 7049894B2 JP 2018072625 A JP2018072625 A JP 2018072625A JP 2018072625 A JP2018072625 A JP 2018072625A JP 7049894 B2 JP7049894 B2 JP 7049894B2
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boron
based film
plasma
forming
gas
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JP2019186306A5 (enExample
JP2019186306A (ja
Inventor
博一 上田
金望 李
正浩 岡
佳優 渡部
勇生 山本
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018072625A priority Critical patent/JP7049894B2/ja
Priority to KR1020207030966A priority patent/KR102493031B1/ko
Priority to US17/041,767 priority patent/US11615957B2/en
Priority to PCT/JP2019/007273 priority patent/WO2019193872A1/ja
Publication of JP2019186306A publication Critical patent/JP2019186306A/ja
Publication of JP2019186306A5 publication Critical patent/JP2019186306A5/ja
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A30/00—Adapting or protecting infrastructure or their operation
    • Y02A30/27—Relating to heating, ventilation or air conditioning [HVAC] technologies

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  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018072625A 2018-04-04 2018-04-04 ボロン系膜の成膜方法および成膜装置 Active JP7049894B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018072625A JP7049894B2 (ja) 2018-04-04 2018-04-04 ボロン系膜の成膜方法および成膜装置
KR1020207030966A KR102493031B1 (ko) 2018-04-04 2019-02-26 보론계 막의 성막 방법 및 성막 장치
US17/041,767 US11615957B2 (en) 2018-04-04 2019-02-26 Method for forming boron-based film, formation apparatus
PCT/JP2019/007273 WO2019193872A1 (ja) 2018-04-04 2019-02-26 ボロン系膜の成膜方法および成膜装置

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JP2018072625A JP7049894B2 (ja) 2018-04-04 2018-04-04 ボロン系膜の成膜方法および成膜装置

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JP2019186306A JP2019186306A (ja) 2019-10-24
JP2019186306A5 JP2019186306A5 (enExample) 2021-03-04
JP7049894B2 true JP7049894B2 (ja) 2022-04-07

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302218A (ja) 1999-12-27 2001-10-31 National Institute For Materials Science 立方晶窒化ホウ素及びその気相合成法
JP2006237478A (ja) 2005-02-28 2006-09-07 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の成膜方法及び成膜装置
JP2009099583A (ja) 2007-10-12 2009-05-07 Ulvac Japan Ltd 半導体装置の製造方法及び半導体装置の製造装置
WO2011083869A1 (ja) 2010-01-11 2011-07-14 国立大学法人九州大学 立方晶窒化ホウ素コーティング法およびそれにより得られる材料

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05213695A (ja) * 1992-02-03 1993-08-24 Matsushita Electric Ind Co Ltd ダイヤモンド薄膜の堆積方法
JPH07300665A (ja) * 1994-05-02 1995-11-14 Yuken Kogyo Kk 金属基材のホウ素拡散浸透層・ホウ素膜形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001302218A (ja) 1999-12-27 2001-10-31 National Institute For Materials Science 立方晶窒化ホウ素及びその気相合成法
JP2006237478A (ja) 2005-02-28 2006-09-07 Mitsubishi Heavy Ind Ltd 窒化ホウ素膜の成膜方法及び成膜装置
JP2009099583A (ja) 2007-10-12 2009-05-07 Ulvac Japan Ltd 半導体装置の製造方法及び半導体装置の製造装置
WO2011083869A1 (ja) 2010-01-11 2011-07-14 国立大学法人九州大学 立方晶窒化ホウ素コーティング法およびそれにより得られる材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Ｓｅｉｉｃｈｉｒｏ Ｍａｔｓｕｍｏｔｏ ａｎｄ Ｗｅｎｊｕｎ Ｚｈａｎｇ，Ｈｉｇｈ－Ｒａｔｅ Ｄｅｐｏｓｉｔｉｏｎ ｏｆ Ｈｉｇｈ－Ｑｕａｌｉｔｙ， Ｔｈｉｃｋ Ｃｕｂｉｃ Ｂｏｒｏｎ Ｎｉｔｒｉｄｅ Ｆｉｌｍｓ ｂｙ Ｂｉａｓ－Ａｓｓｉｓｔｅｄ ＤＣ Ｊｅｔ Ｐｌａｓｍａ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ ，ＪＡＰＡＮＥＳＥ ＪＯＵＲＮＡＬ ＯＦ ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ，日本，Ｔｈｅ Ｊａｐａｎ Ｓｏｃｉｅｔｙ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，2000年，Ｖｏｌ．３９、Ｎｏ．５Ｂ，ｐｐ．Ｌ４４２－Ｌ４４４

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