JP7045888B2 - 成膜装置の運用方法及び成膜装置 - Google Patents
成膜装置の運用方法及び成膜装置 Download PDFInfo
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- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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- H01L21/02041—Cleaning
- H01L21/02076—Cleaning after the substrates have been singulated
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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Description
本発明の実施形態に係るクリーニング方法が適用可能な成膜装置について説明する。図1は、本発明の実施形態に係る成膜装置の一例を示す図である。
本発明の実施形態に係る成膜装置の運用方法について説明する。図2は、本発明の実施形態に係る成膜装置の運用方法の一例を示す図である。
本発明の実施形態により奏される効果を確認するための実施例について説明する。
1.ステップS21
・ガスの種類:DIPAS
・ガスの流量:50~500sccm
・ウエハ温度:350~400℃
・処理容器内の圧力:1.0Torr(133Pa)
2.ステップS22
・ガスの種類:Si2H6
・ガスの流量:50~1000sccm
・ウエハ温度:350~400℃
・処理容器内の圧力:0.5~3.0Torr(67~400Pa)
3.ステップS23
・ガスの種類:SiH4
・ガスの流量:100~2000sccm
・ウエハ温度:470~530℃
・処理容器内の圧力:0.2~3.0Torr(27~400Pa)
4.ステップS24
・ガスの種類:Cl2
・ガスの流量:100~5000sccm
・ウエハ温度:300~400℃
・処理容器内の圧力:0.1~3.0Torr(13~400Pa)
5.ステップS25
・ガスの種類:SiH4
・ガスの流量:100~2000sccm
・ウエハ温度:470~530℃
・処理容器内の圧力:0.2~3.0Torr(27~400Pa)
<クリーニング工程S4>
・ガスの種類:20%のF2を含むN2
・ガスの流量:5~20slm
・ウエハ温度:300~350℃
・処理容器内の圧力:30Torr(4kPa)
図3は、プロセス回数と圧力計により検出された圧力との関係を示す図である。図3において、横軸はプロセス回数を示し、縦軸は処理容器10内を真空ポンプ31で引き切りの状態にしたときの第1圧力計34により測定される圧力(Pa)を示す。
10 処理容器
20 ガス供給部
30 ガス排気部
34 第1圧力計
35 アイソレーションバルブ
36 第2圧力計
100 制御部
W ウエハ
Claims (5)
- 基板を収容し、減圧雰囲気を形成して成膜処理を行うための処理容器と、処理容器内の圧力を監視する圧力計と、を有する成膜装置の運用方法であって、
前記処理容器内に成膜ガスを供給し、前記基板に膜を形成する成膜工程と、
前記処理容器内及び前記圧力計に前記膜を除去するクリーニングガスを供給するクリーニング工程と、
を有し、
前記成膜工程と前記クリーニング工程とは交互に繰り返し行われる、
成膜装置の運用方法。 - 前記圧力計は、バルブを介して前記処理容器内と連通しており、
前記クリーニング工程は、前記バルブを開いた状態にして行われる、
請求項1に記載の成膜装置の運用方法。 - 前記圧力計は、前記クリーニングガスに対してエッチング耐性を有する、
請求項1又は2に記載の成膜装置の運用方法。 - 基板を収容し、減圧雰囲気を形成して成膜処理を行うための処理容器と、
前記処理容器内とバルブを介して連通し、前記処理容器内の圧力を監視する圧力計と、
前記バルブの動作を制御する制御部と、
を有し、
前記制御部は、
前記処理容器内に成膜ガスを供給し、前記基板に膜を形成する成膜工程と、
前記処理容器内及び前記圧力計に前記膜を除去するクリーニングガスを供給するクリーニング工程と、
を交互に繰り返し行い、前記クリーニング工程において前記バルブを開いた状態に制御する、
成膜装置。 - 前記圧力計は、前記クリーニングガスに対してエッチング耐性を有する、
請求項4に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018048482A JP7045888B2 (ja) | 2018-03-15 | 2018-03-15 | 成膜装置の運用方法及び成膜装置 |
KR1020190028089A KR102513230B1 (ko) | 2018-03-15 | 2019-03-12 | 성막 장치의 운용 방법 및 성막 장치 |
US16/353,213 US20190284687A1 (en) | 2018-03-15 | 2019-03-14 | Cleaning Method and Operating Method of Film-Forming Apparatus, and Film-Forming Apparatus |
CN201910198410.4A CN110273138B (zh) | 2018-03-15 | 2019-03-15 | 成膜装置的清洗方法、运用方法以及成膜装置 |
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JP2018048482A JP7045888B2 (ja) | 2018-03-15 | 2018-03-15 | 成膜装置の運用方法及び成膜装置 |
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JP2019161121A JP2019161121A (ja) | 2019-09-19 |
JP7045888B2 true JP7045888B2 (ja) | 2022-04-01 |
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JP2018048482A Active JP7045888B2 (ja) | 2018-03-15 | 2018-03-15 | 成膜装置の運用方法及び成膜装置 |
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US (1) | US20190284687A1 (ja) |
JP (1) | JP7045888B2 (ja) |
KR (1) | KR102513230B1 (ja) |
CN (1) | CN110273138B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7330060B2 (ja) * | 2019-10-18 | 2023-08-21 | 東京エレクトロン株式会社 | 成膜装置、制御装置及び圧力計の調整方法 |
JP7450494B2 (ja) | 2020-08-18 | 2024-03-15 | 東京エレクトロン株式会社 | 基板処理装置および基板処理装置のガス切り替え方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066540A (ja) | 2004-08-25 | 2006-03-09 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法及び薄膜形成装置 |
JP2009123946A (ja) | 2007-11-15 | 2009-06-04 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2017179549A (ja) | 2016-03-31 | 2017-10-05 | 株式会社昭和真空 | 成膜装置及び成膜方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3047248B2 (ja) | 1990-10-19 | 2000-05-29 | 東京エレクトロン株式会社 | クリーニング方法 |
JPH09306899A (ja) * | 1996-05-16 | 1997-11-28 | Hitachi Electron Eng Co Ltd | 気相反応装置 |
JP2002008991A (ja) | 2000-06-21 | 2002-01-11 | Tokyo Electron Ltd | クリーニング方法 |
JP2015192063A (ja) * | 2014-03-28 | 2015-11-02 | 東京エレクトロン株式会社 | アモルファスシリコン膜形成装置の洗浄方法、アモルファスシリコン膜の形成方法およびアモルファスシリコン膜形成装置 |
-
2018
- 2018-03-15 JP JP2018048482A patent/JP7045888B2/ja active Active
-
2019
- 2019-03-12 KR KR1020190028089A patent/KR102513230B1/ko active IP Right Grant
- 2019-03-14 US US16/353,213 patent/US20190284687A1/en not_active Abandoned
- 2019-03-15 CN CN201910198410.4A patent/CN110273138B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006066540A (ja) | 2004-08-25 | 2006-03-09 | Tokyo Electron Ltd | 薄膜形成装置の洗浄方法及び薄膜形成装置 |
JP2009123946A (ja) | 2007-11-15 | 2009-06-04 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2017179549A (ja) | 2016-03-31 | 2017-10-05 | 株式会社昭和真空 | 成膜装置及び成膜方法 |
Also Published As
Publication number | Publication date |
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CN110273138A (zh) | 2019-09-24 |
CN110273138B (zh) | 2023-04-07 |
US20190284687A1 (en) | 2019-09-19 |
KR102513230B1 (ko) | 2023-03-24 |
JP2019161121A (ja) | 2019-09-19 |
KR20190109262A (ko) | 2019-09-25 |
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