CN110273138B - 成膜装置的清洗方法、运用方法以及成膜装置 - Google Patents
成膜装置的清洗方法、运用方法以及成膜装置 Download PDFInfo
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Abstract
本发明提供一种成膜装置的清洗方法、运用方法以及成膜装置,能够减少压力计的更换频度。一个实施方式的成膜装置的清洗方法是具有处理容器和压力计的成膜装置的清洗方法,其中,该处理容器用于收容基板并且形成减压气氛来进行成膜处理,该压力计用于对处理容器内的压力进行监视,在所述成膜装置的清洗方法中,向实施了所述成膜处理的所述处理容器内和所述压力计供给用于将在所述成膜处理中形成的膜去除的清洗气体。
Description
技术领域
本发明涉及一种成膜装置的清洗方法、运用方法以及成膜装置。
背景技术
在将基板收容于被维持为减压气氛的处理容器内来进行成膜处理的成膜装置中,在处理容器的内壁等也会由于成膜处理而沉积膜。当在处理容器的内壁等沉积的膜的量增多时,膜剥落而成为产生粒子的原因。因此,在进行成膜处理后的规定的时刻进行向处理容器内供给清洗气体来将在处理容器的内壁等沉积的膜去除的清洗处理(例如,参照专利文献1-4)。
专利文献1:日本特开平4-157161号公报
专利文献2:日本特开2002-8991号公报
专利文献3:日本特开2006-66540号公报
专利文献4:日本特开2015-192063号公报
发明内容
发明要解决的问题
然而,在成膜处理时,在用于对处理容器内的压力进行监视的压力计也沉积膜,因此有时压力计的检测值发生偏差从而无法正常地监视处理容器内的压力。在该情况下,考虑更换压力计等对策。然而,存在根据工艺条件不同而更换压力计的频度比以往有所增加的情况,从而期望减少压力计的更换频度。
因此,本发明的一个方式的目的在于,提供一种能够减少压力计的更换频度的成膜装置的清洗方法。
用于解决问题的方案
为了实现上述目的,本发明的一个方式所涉及的成膜装置的清洗方法是具有处理容器和压力计的成膜装置的清洗方法,其中,该处理容器用于收容基板并且形成减压气氛来进行成膜处理,该压力计用于对处理容器内的压力进行监视,在该成膜装置的清洗方法中,向实施了所述成膜处理的所述处理容器内和所述压力计供给用于将在所述成膜处理中形成的膜去除的清洗气体。
发明的效果
根据公开的成膜装置的清洗方法,能够减少压力计的更换频度。
附图说明
图1是示出本发明的实施方式所涉及的成膜装置的一个例子的图。
图2是示出本发明的实施方式所涉及的成膜装置的运用方法的一个例子的图。
图3是示出工艺次数与由压力计检测出的压力之间的关系的图。
附图标记说明
1:成膜装置;10:处理容器;20:气体供给部;30:气体排出部;34:第一压力计;35:隔离阀;36:第二压力计;100:控制部;W:晶圆。
具体实施方式
下面,参照附图来说明用于实施本发明的方式。此外,在本说明书和附图中,对于实质上相同的结构,通过标注相同的附图标记来省略重复的说明。
[成膜装置的整体结构]
说明能够应用本发明的实施方式所涉及的清洗方法的成膜装置。图1是示出本发明的实施方式所涉及的成膜装置的一个例子的图。
成膜装置1具有处理容器10、气体供给部20、气体排出部30以及控制部100。在成膜装置1中,从气体供给部20向处理容器10内供给流量受到控制的气体,并从气体排出部30排出气体,由此在处理容器10内形成规定的减压气氛,并对被收容在处理容器10内的作为基板的半导体晶圆(以下简称为“晶圆”)进行成膜处理。
处理容器10是用于形成减压气氛来进行成膜处理的真空容器。处理容器10在内部收容一片或多片晶圆。处理容器10可以构成为,例如在内部具有载置台,并能够在载置台上载置一片晶圆。另外,处理容器10也可以构成为,例如在内部设置旋转台,并能够沿着旋转台的周向载置多片晶圆。另外,处理容器10还可以构成为,例如能够在内部收容将多片晶圆以呈架状的方式进行保持的晶圆舟。
气体供给部20向处理容器10内供给各种气体。气体供给部20例如具有按气体的种类设置的供给源、配管、流量控制器、阀等。各种气体从供给源经过配管并被流量控制器控制流量后供给到处理容器10内。各种气体例如可以是成膜气体、清洗气体、吹扫气体。成膜气体是用于在晶圆上形成膜的气体,例如可以是含硅气体。含硅气体可以是例如甲硅烷(SiH4)、乙硅烷(Si2H6)、二异丙基氨基硅烷(DIPAS)。清洗气体是用于将在成膜处理中形成于处理容器10内和后述的压力计的膜去除的气体,根据所形成的膜的种类来选择清洗气体。在所形成的膜是硅系膜的情况下,清洗气体只要是能够去除硅膜的气体即可,例如能使用氟(F2)、氯(Cl2)、三氟化氯(ClF3)。另外,在氧化硅系膜或氮化硅系膜的情况下,能够使用氟化氢(HF)、氟(F2)与氟化氢(HF)的混合气体、氟(F2)与氢(H2)的混合气体来作为清洗气体。吹扫气体是用于置换残留在处理容器10内的成膜气体或清洗气体的气体,例如可以是氮(N2)、氩(Ar)等非活性气体。
气体排出部30用于排出处理容器10中的气体。气体排出部30具有真空泵31、排气配管32、主阀33、第一压力计34、隔离阀35以及第二压力计36。通过将主阀33打开,来使处理容器10内的气体经过排气配管32后被真空泵31排出。第一压力计34经由隔离阀35而与排气配管32连通,在隔离阀35打开的状态下,第一压力计34对处理容器10(排气配管32)内的压力进行监视。第一压力计34是对于清洗气体而言具有耐腐蚀性的压力计,例如可以是将因科镍合金、蓝宝石等用作隔膜的隔膜真空计。第一压力计34的测定压力范围可以为例如0kPa~1.3kPa。第二压力计36与排气配管32连通,对处理容器10(排气配管32)内的压力进行监视。第二压力计36对于清洗气体而言具有耐腐蚀性,是用于测定比第一压力计测定的压力高的压力的压力计,例如可以是将因科镍合金、蓝宝石等用作隔膜的隔膜真空计。第二压力计36的测定压力范围可以为例如0kPa~133kPa。
控制部100对成膜装置1的各部、例如气体供给部20、气体排出部30的动作进行控制。控制部100具有CPU(Central Processing Unit:中央处理单元)、ROM(Read OnlyMemory:只读存储器)以及RAM(Random Access Memory:随机存取存储器)。CPU按照保存在RAM等的存储区域中的制程来执行所期望的处理。制程中设定有与工艺条件相对应的装置的控制信息。控制信息可以是例如气体流量、压力、温度、工艺时间。此外,制程以及控制部100使用的程序也可以被存储在例如硬盘、半导体存储器中。另外,制程等也可以形成为,在被收容于CD-ROM、DVD等可移动的计算机可读取的存储介质的状态下被设置在规定位置并被读取。此外,控制部100也可以与成膜装置1相独立地设置。
[成膜装置的运用方法]
说明本发明的实施方式所涉及的成膜装置的运用方法。图2是示出本发明的实施方式所涉及的成膜装置的运用方法的一个例子的图。
如图2所示,在成膜装置的运用方法中,将搬入工序S1、成膜工序S2、搬出工序S3以及清洗工序S4设为一个周期,反复进行该周期。另外,也可以在成膜工序S2之后或清洗工序S4之后进行吹扫步骤。
搬入工序S1是向处理容器10内搬入晶圆的工序。
成膜工序S2是进行成膜处理的工序,在该成膜处理中,在搬入工序S1中被搬入到处理容器10内的晶圆上形成所期望的膜。在成膜工序S2中,为确保膜厚均匀性等,大多在1.3kPa以下的压力下进行膜的形成,在该情况下,将隔离阀35打开,并基于由第一压力计34测定的压力来将处理容器10内的压力控制为期望的压力。因此,在成膜工序S2中,在晶圆的表面形成膜,并且有时还在晶圆的表面以外的部位、例如处理容器10的内壁、排气配管32、第一压力计34、第二压力计36形成膜。像这样,当在晶圆的表面以外的部位形成膜且膜不被去除而变厚时,膜剥落并成为产生粒子的原因。
搬出工序S3是将在成膜工序S2中形成了期望的膜的晶圆从处理容器10内搬出的工序。
清洗工序S4是在没有收容晶圆的状态且将隔离阀35打开的状态下从气体供给部20向处理容器10内供给清洗气体的工序。在清洗工序S4中,隔离阀35为打开的状态,因此没有与沉积于处理容器10内的膜发生反应的清洗气体的一部分经过排气配管32后到达第一压力计34。因此,除了能够去除沉积于处理容器10内的膜以外,还能够去除沉积于第一压力计34的膜。另外,被供给到处理容器10内的清洗气体的一部份经过排气配管32后到达第二压力计36,因此能够去除沉积于第二压力计36的膜。
根据以上所说明的本发明的实施方式,在向处理容器10内供给成膜气体并在晶圆上形成膜之后,向处理容器10内和压力计(第一压力计34、第二压力计36)供给用于将在成膜工序S2中沉积的膜去除的清洗气体。由此,能够在将沉积于处理容器10内的膜去除的腔室清洗的同时,将沉积于压力计的膜去除。因此,能够抑制压力计的检测值发生偏差,从而能够减少压力计的更换频度。
另一方面,在以往的清洗工序中,为了缩短清洗时间,大多将处理容器内控制为1.3kPa以上这样的高的压力来进行清洗。另外,在使用测定压力范围为例如0kPa~1.3kPa的压力计的情况下,一般是以在作为测定压力范围的上限值的1.3kPa时将隔离阀关闭的方式来运用。因而,在将隔离阀关闭的状态下进行清洗。因此,即使进行清洗也无法去除沉积于压力计的膜。
此外,在上述的实施方式中,举例说明了将搬入工序S1、成膜工序S2、搬出工序S3以及清洗工序S4设为一个周期、并反复进行该周期的情况,但不限定于此。例如,也可以是,将搬入工序S1、成膜工序S2以及搬出工序S3以该顺序反复进行多次之后,进行清洗工序S4。
[实施例]
说明用于确认本发明的实施方式所起到的效果的实施例。
在实施例中,将搬入工序S1、成膜工序S2、搬出工序S3以及清洗工序S4设为一个周期,并反复进行该周期。而且,按每个周期利用真空泵31将处理容器10内控制为抽真空的状态,并确认由第一压力计34测定的压力,由此对在第一压力计34的检测值中产生的偏差进行评价。
首先,在从第1周期至第25周期为止的周期中,在将隔离阀35关闭的状态下进行清洗工序S4。接着,在第25周期结束之后,将隔离阀35打开来进行清洗工序S4,将沉积于第一压力计34的膜去除。接着,在从第26周期至第70周期为止的周期中,在将隔离阀35打开的状态下进行清洗工序S4。
实施例中的成膜工序S2及清洗工序S4的条件如下。此外,成膜工序S2是包括第一成膜处理(步骤S21~步骤S23)、蚀刻处理(步骤S24)以及第二成膜处理(步骤S25)的工序。
<成膜工序S2>
1.步骤S21
·气体的种类:DIPAS
·气体的流量:50sccm~500sccm
·晶圆温度:350℃~400℃
·处理容器内的压力:1.0Torr(133Pa)
2.步骤S22
·气体的种类:Si2H6
·气体的流量:50sccm~1000sccm
·晶圆温度:350℃~400℃
·处理容器内的压力:0.5Torr~3.0Torr(67Pa~400Pa)
3.步骤S23
·气体的种类:SiH4
·气体的流量:100sccm~2000sccm
·晶圆温度:470℃~530℃
·处理容器内的压力:0.2Torr~3.0Torr(27Pa~400Pa)
4.步骤S24
·气体的种类:Cl2
·气体的流量:100sccm~5000sccm
·晶圆温度:300℃~400℃
·处理容器内的压力:0.1Torr~3.0Torr(13Pa~400Pa)
5.步骤S25
·气体的种类:SiH4
·气体的流量:100sccm~2000sccm
·晶圆温度:470℃~530℃
·处理容器内的压力:0.2Torr~3.0Torr(27Pa~400Pa)
<清洗工序S4>
·气体的种类:含的20%F2的N2
·气体的流量:5slm~20slm
·晶圆温度:300℃~350℃
·处理容器内的压力:30Torr(4kPa)。
图3是示出工艺次数与由压力计检测出的压力之间的关系的图。在图3中,横轴表示工艺次数,纵轴表示利用真空泵31将处理容器10内设为抽真空的状态时由第一压力计34测定的压力(Pa)。
如图3所示,在将隔离阀35设为关闭的状态来进行清洗工序S4的情况下,在第23~25周期发生了压力偏移。与此相对,在将隔离阀35设为打开的状态来进行清洗工序S4的情况下,即使将搬入工序S1、成膜工序S2、搬出工序S3以及清洗工序S4的周期反复进行45次,也没有发现压力偏移。
因而,认为通过在清洗工序S4中将隔离阀35设为打开的状态,即使在成膜工序S2中在第一压力计34沉积了膜的情况下,也能够将沉积于第一压力计34的膜去除。由此,能够减少压力计的更换频度。
以上,说明了用于实施本发明的方式,但上述内容并不是对发明的内容进行限定,能够在本发明的范围内进行各种变形和改进。
Claims (4)
1.一种成膜装置的运用方法,其中,该成膜装置具有:处理容器,其用于收容基板并且形成减压气氛来进行成膜处理;以及压力计,其用于对处理容器内的压力进行监视,所述成膜装置的运用方法包括以下工序:
搬入工序,向所述处理容器内搬入所述基板;
成膜工序,向所述处理容器内供给成膜气体,来在所述基板上形成膜;
搬出工序,将在所述成膜工序中形成了期望的膜的基板从所述处理容器内搬出;以及
清洗工序,向所述处理容器内和所述压力计供给用于去除所述膜的清洗气体,
其中,将所述搬入工序、所述成膜工序、所述搬出工序以及所述清洗工序设为一个周期,并反复进行该周期,
所述压力计经由阀而与所述处理容器内连通,
将所述阀设为打开的状态,来进行所述清洗工序,
所述清洗工序是在处理容器内为1.3kPa以上的压力下进行的。
2.根据权利要求1所述的成膜装置的运用方法,其特征在于,
所述压力计对于所述清洗气体而言具有耐腐蚀性。
3.一种成膜装置,具有:
处理容器,其用于收容基板并且形成减压气氛来进行成膜处理;
压力计,其经由阀而与所述处理容器内连通,用于对所述处理容器内的压力进行监视;以及
控制部,其控制所述阀的动作,
其中,在向实施了所述成膜处理的所述处理容器内供给用于将在所述成膜处理中形成的膜去除的清洗气体时,所述控制部将所述阀控制为打开的状态,
其中,在所述成膜装置中进行以下工序:
搬入工序,向所述处理容器内搬入所述基板;
成膜工序,向所述处理容器内供给成膜气体,来在所述基板上形成膜;
搬出工序,将在所述成膜工序中形成了期望的膜的基板从所述处理容器内搬出;以及
清洗工序,向所述处理容器内和所述压力计供给用于去除所述膜的清洗气体,
其中,将所述搬入工序、所述成膜工序、所述搬出工序以及所述清洗工序设为一个周期,并反复进行该周期,
所述清洗工序是在处理容器内为1.3kPa以上的压力下进行的。
4.根据权利要求3所述的成膜装置,其特征在于,
所述压力计对于所述清洗气体而言具有耐腐蚀性。
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