JP7039527B2 - 無線装置および無線装置の製造方法 - Google Patents
無線装置および無線装置の製造方法 Download PDFInfo
- Publication number
- JP7039527B2 JP7039527B2 JP2019130233A JP2019130233A JP7039527B2 JP 7039527 B2 JP7039527 B2 JP 7039527B2 JP 2019130233 A JP2019130233 A JP 2019130233A JP 2019130233 A JP2019130233 A JP 2019130233A JP 7039527 B2 JP7039527 B2 JP 7039527B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- metal film
- wiring
- wireless device
- secondary battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims description 145
- 229910052751 metal Inorganic materials 0.000 claims description 128
- 239000002184 metal Substances 0.000 claims description 128
- 238000007789 sealing Methods 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 7
- 229920005989 resin Polymers 0.000 description 27
- 239000011347 resin Substances 0.000 description 27
- 239000010410 layer Substances 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 6
- 229910052744 lithium Inorganic materials 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000006071 cream Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/44—Methods for charging or discharging
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M50/00—Constructional details or processes of manufacture of the non-active parts of electrochemical cells other than fuel cells, e.g. hybrid cells
- H01M50/20—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders
- H01M50/247—Mountings; Secondary casings or frames; Racks, modules or packs; Suspension devices; Shock absorbers; Transport or carrying devices; Holders specially adapted for portable devices, e.g. mobile phones, computers, hand tools or pacemakers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/106—Microstrip slot antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/10—Resonant slot antennas
- H01Q13/16—Folded slot antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1811—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/186—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
- H01M10/4264—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing with capacitors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Battery Mounting, Suspending (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Waveguide Aerials (AREA)
- Transceivers (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Description
まず、図1および図2を参照して、第1の実施形態に係る無線装置の構造について説明する。図1は、第1の実施形態に係る無線装置の外観を示す斜視図であり、図2は、図1の線分A-A’を通り、XZ面に平行な面における断面図である。
なお、上述の第1の実施形態に係る無線装置においては、図1に示したように、封止樹脂104の表面のうち、基板101の第1の面101aと平行な上面部から、この上面部と交差する1つの側面部を介して基板101の端面に到達する形状で、第1の金属膜105が設けられている。しかし、第1の金属膜105は、基板101の端面において第1の配線111と接触し、第1の配線111と接続される形状であれば、どのような形状で設けられていてもよい。
第2の金属膜106は、上述のように、無線回路102が動作する際にグランド電位となる導体である。したがって、例えば図7に示すように、第2の金属膜16にスロットアンテナ109の少なくとも一部を形成し、アンテナ付きの無線装置として構成することもできる。この場合、スロットアンテナ109は、基板101の第1の面101aに対して垂直な方向(-Z方向)に見たときに、無線回路102と重ならないように形成する。これにより、第2の金属膜106による電磁波シールドの機能を維持しながら、アンテナ付きの無線装置を実現することができる。
上述の第1の実施形態に係る無線装置は、2次電池107を基板101の第2の面101bに表面実装している。しかし、2次電池107は、第1の電極107aが基板101に設けられた第1の配線111に電気的に接続され、第2の電極107bが基板101に設けられた第2の配線112に電気的に接続されるように無線装置に搭載されればよく、基板101の第2の面101bに表面実装する形態に限らない。
次に、第2の実施形態について説明する。第2の実施形態に係る無線装置は、2次電池107として、一般的に市販されているリチウムポリマー電池を無線装置に搭載した例である。一般的に市販されているリチウムポリマー電池は電源回路を備えており、この電源回路にコネクタがケーブルによって接続されている。リチウムポリマー電池の第1の電極(正極)は、電源回路を介してコネクタの正極側端子と電気的に接続され、リチウムポリマー電池の第2の電極(負極)は、電源回路を介してコネクタの負極側端子と電気的に接続されている。以下では、本実施形態に係る無線装置に搭載される2次電池107を、第1実施形態と区別して2次電池107’と表記する。
101a 第1の面
101b 第2の面
102 無線回路
103 電源回路
104 封止樹脂
105 第1の金属膜
106 第2の金属膜
107 2次電池
107a 第1の電極
107b 第2の電極
108 ギャップ部
109 スロットアンテナ
111 第1の配線
112 第2の配線
113 第3の配線
Claims (10)
- 基板と、
前記基板の第1の面に搭載された、無線回路を含む半導体素子と、
前記基板の前記第1の面に設けられ、前記半導体素子を封止する非導電層と、
前記非導電層の表面から前記基板の少なくとも1つの端面に亘って設けられ、該端面において前記基板に設けられた第1の配線と接触する第1の金属膜と、
前記非導電層の表面から前記基板の少なくとも1つの端面に亘って、前記第1の金属膜と離間して設けられ、該端面において前記基板に設けられた第2の配線と接触する第2の金属膜と、
第1の電極が前記第1の配線と電気的に接続され、第2の電極が前記第2の配線と電気的に接続された2次電池と、を備える無線装置。 - 前記2次電池は、前記基板の第2の面に搭載されている
請求項1に記載の無線装置。 - 前記基板の第2の面側に配置される電池基板をさらに備え、
前記2次電池は、前記電池基板に搭載されている
請求項1に記載の無線装置。 - 前記2次電池は、前記基板の前記第1の面に搭載され、前記半導体素子とともに前記非導電層により封止されている
請求項1に記載の無線装置。 - 前記2次電池の前記第1の電極は、前記基板に設けられた第3の配線および電源回路を介して前記第1の配線と電気的に接続されている
請求項1乃至4のいずれか一項に記載の無線装置。 - 前記第2の金属膜の一部は、前記基板の前記第1の面に対して垂直な方向に見たときに、前記半導体素子と重なるように設けられている
請求項1乃至5のいずれか一項に記載の無線装置。 - 前記非導電層の表面は、前記基板の前記第1の面と平行な上面部と、該上面部と交差する側面部とを含み、
前記第1の金属膜は、前記非導電層の側面部から前記基板の少なくとも1つの端面に亘って設けられている
請求項1乃至6のいずれか一項に記載の無線装置。 - 前記第1の金属膜と前記第2の金属膜は、前記非導電層の表面から前記基板の少なくとも1つの端面に亘って成膜された一体の金属膜に対して切削加工を施してスリット状のギャップ部を形成し、該ギャップ部により前記一体の金属膜を分離することにより形成される
請求項1乃至7のいずれか一項に記載の無線装置。 - 前記第1の金属膜および前記第2の金属膜の少なくとも一方にスロットアンテナの少なくとも一部が形成されている
請求項1乃至8のいずれか一項に記載の無線装置。 - 基板の第1の面に搭載された半導体素子を封止する非導電層の表面から前記基板の少なくとも1つの端面に亘って一体の金属膜を成膜する工程と、
前記一体の金属膜に対して切削加工を施してスリット状のギャップ部を形成し、該ギャップ部により前記一体の金属膜を、前記基板の少なくとも1つの端面において前記基板に設けられた第1の配線と接触する第1の金属膜と、前記基板の少なくとも1つの端面において前記基板に設けられた第2の配線と接触する第2の金属膜とに分離する工程とを有し、
前記第1の配線は2次電池の第1の電極と電気的に接続され、前記第2の配線は2次電池の第2の電極と電気的に接続される
無線装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019130233A JP7039527B2 (ja) | 2019-07-12 | 2019-07-12 | 無線装置および無線装置の製造方法 |
US16/803,483 US11831067B2 (en) | 2019-07-12 | 2020-02-27 | Electronic apparatus and method of manufacturing electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019130233A JP7039527B2 (ja) | 2019-07-12 | 2019-07-12 | 無線装置および無線装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021015904A JP2021015904A (ja) | 2021-02-12 |
JP7039527B2 true JP7039527B2 (ja) | 2022-03-22 |
Family
ID=74101863
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019130233A Active JP7039527B2 (ja) | 2019-07-12 | 2019-07-12 | 無線装置および無線装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US11831067B2 (ja) |
JP (1) | JP7039527B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI778816B (zh) * | 2021-09-28 | 2022-09-21 | 欣興電子股份有限公司 | 晶片互聯的封裝結構及其封裝方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120300421A1 (en) | 2011-05-23 | 2012-11-29 | Medtronic, Inc. | Electrical feedthrough for implantable medical device |
JP5309139B2 (ja) | 2007-08-20 | 2013-10-09 | マイ エフシー エイビー | 電気化学的電池を相互接続するための配置、燃料電池アッセンブリ、および燃料電池装置を製造する方法 |
WO2018021005A1 (ja) | 2016-07-27 | 2018-02-01 | 日本精機株式会社 | 通信装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05309139A (ja) * | 1992-05-12 | 1993-11-22 | Omron Corp | 高周波治療器 |
JP4064834B2 (ja) | 2003-02-05 | 2008-03-19 | 株式会社日本自動車部品総合研究所 | スロットアンテナ |
US7965180B2 (en) * | 2006-09-28 | 2011-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Wireless sensor device |
JP5726787B2 (ja) | 2012-02-28 | 2015-06-03 | 株式会社東芝 | 無線装置、それを備えた情報処理装置および記憶装置 |
JP6567475B2 (ja) | 2016-08-05 | 2019-08-28 | 株式会社東芝 | 無線装置 |
JP6668197B2 (ja) | 2016-08-18 | 2020-03-18 | 株式会社東芝 | 無線装置 |
JP6659519B2 (ja) | 2016-11-02 | 2020-03-04 | 株式会社東芝 | アンテナ装置 |
JP6602324B2 (ja) | 2017-01-17 | 2019-11-06 | 株式会社東芝 | 無線装置 |
JP6602326B2 (ja) | 2017-02-06 | 2019-11-06 | 株式会社東芝 | 無線装置 |
JP6428823B2 (ja) | 2017-03-29 | 2018-11-28 | カシオ計算機株式会社 | 電子機器 |
JP6776280B2 (ja) | 2018-01-10 | 2020-10-28 | 株式会社東芝 | 無線通信モジュール、プリント基板、および製造方法 |
-
2019
- 2019-07-12 JP JP2019130233A patent/JP7039527B2/ja active Active
-
2020
- 2020-02-27 US US16/803,483 patent/US11831067B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5309139B2 (ja) | 2007-08-20 | 2013-10-09 | マイ エフシー エイビー | 電気化学的電池を相互接続するための配置、燃料電池アッセンブリ、および燃料電池装置を製造する方法 |
US20120300421A1 (en) | 2011-05-23 | 2012-11-29 | Medtronic, Inc. | Electrical feedthrough for implantable medical device |
WO2018021005A1 (ja) | 2016-07-27 | 2018-02-01 | 日本精機株式会社 | 通信装置 |
Also Published As
Publication number | Publication date |
---|---|
US20210013586A1 (en) | 2021-01-14 |
US11831067B2 (en) | 2023-11-28 |
JP2021015904A (ja) | 2021-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10593480B2 (en) | Chip capacitor, circuit assembly, and electronic device | |
KR101616625B1 (ko) | 반도체 패키지 및 그 제조방법 | |
US11335645B2 (en) | High-frequency module and manufacturing method thereof | |
US9691710B1 (en) | Semiconductor package with antenna | |
US8043892B2 (en) | Semiconductor die package and integrated circuit package and fabricating method thereof | |
KR102003604B1 (ko) | 코일 부품 | |
CN108735716B (zh) | 封装结构 | |
JP2004119863A (ja) | 回路装置およびその製造方法 | |
US20130280598A1 (en) | Solid State Battery | |
US10553954B2 (en) | Wireless device | |
JP7111514B2 (ja) | 電子部品モジュール | |
US10062649B2 (en) | Package substrate | |
CN106711123A (zh) | 半导体封装件及其制造方法 | |
US10658304B2 (en) | Semiconductor device and method for manufacturing the same | |
JP7039527B2 (ja) | 無線装置および無線装置の製造方法 | |
US11452213B2 (en) | Method of fabricating battery protection circuit package | |
US11375623B2 (en) | Battery protection circuit package and method of fabricating the same | |
JP2007243989A (ja) | 弾性表面波フィルタパッケージ | |
US20210057397A1 (en) | Electrodeless passive embedded substrate | |
JP2006049602A (ja) | 半導体装置およびその製造方法 | |
US12009285B2 (en) | Substrate having a recessed portion for an electronic component | |
WO2022080360A1 (ja) | 電子部品モジュール、サブモジュールおよびその製造方法 | |
US10930573B2 (en) | Circuit module and manufacturing method therefor | |
CN113950188A (zh) | 电路板组件、电子设备、加工电路板组件的方法 | |
KR20200078771A (ko) | 수동 소자를 구비하는 인쇄회로기판 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210311 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20220127 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220208 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220309 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7039527 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |