JP7027028B2 - 液晶表示パネル - Google Patents
液晶表示パネル Download PDFInfo
- Publication number
- JP7027028B2 JP7027028B2 JP2016107735A JP2016107735A JP7027028B2 JP 7027028 B2 JP7027028 B2 JP 7027028B2 JP 2016107735 A JP2016107735 A JP 2016107735A JP 2016107735 A JP2016107735 A JP 2016107735A JP 7027028 B2 JP7027028 B2 JP 7027028B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- pattern hole
- insulating layer
- liquid crystal
- crystal display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 51
- 230000002093 peripheral effect Effects 0.000 claims description 52
- 239000002184 metal Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000009413 insulation Methods 0.000 description 5
- 230000002860 competitive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Ceramic Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Description
110 第一基板
120 画素電極
130 共通電極層
131 開口
140 第二基板
150 液晶層
C コンタクトホール
CH1、CH1’第一パターン孔
CH2 第二パターン孔
D1 第一最短距離
D2 第二最短距離
D3 第一重なり周長
D4 第二重なり周長
DR1 第一方向
DR2 第二方向
IL 絶縁層
IL1 第一絶縁層
IL2 第二絶縁層
IL3 第三絶縁層
IL4 第四絶縁層
L1 第一長軸
L2 第二長軸
M1 第一金属層
M2 第二金属層
M2a 上層
M2b 中層
M2c 下層
P 画素領域
P1 第一周縁部
P2 第二周縁部
S1、S2、S3側壁
θ 角度
Claims (14)
- 液晶表示パネルであって、
画素領域を有する第一基板と、
前記第一基板上の前記画素領域内に位置する薄膜トランジスタ素子と、
前記画素領域に配置された複数の絶縁層を備え、
前記絶縁層はコンタクトホールを備え、
前記コンタクトホールによって前記薄膜トランジスタ素子に電気的に画素電極が接続されており、
前記コンタクトホールは、異なる前記絶縁層に形成された第一パターン孔及び第二パターン孔を含み、
前記第二パターン孔は、前記第一パターン孔の外側に突出する第一周縁部及び第二周縁部を含み、前記第一周縁部と前記第二周縁部が前記第一パターン孔を挟む反対側にそれぞれ突出され、
前記第一パターン孔は、前記絶縁層の底面における外縁の任意の2点間の距離が最長距離になる第一長軸が第一方向に延び、
前記第二パターン孔は、前記絶縁層の底面における外縁の任意の2点間の距離が最長距離になる第二長軸が前記第一方向と異なる第二方向に延びることを特徴とする液晶表示パネル。 - 前記絶縁層内に位置し、前記コンタクトホールを囲むように形成される開口を有する共通電極層をさらに含むことを特徴とする請求項1に記載の液晶表示パネル。
- 前記薄膜トランジスタ素子は、積層して配置される複数のサブ金属層を含み、
前記サブ金属層は、上層及び下層を含み、
前記画素電極は、前記コンタクトホールによって前記サブ金属層の前記上層の表面に電気的に接続されることを特徴とする請求項1に記載の液晶表示パネル。 - 前記薄膜トランジスタ素子は、積層して配置される複数のサブ金属層を含み、
前記サブ金属層は、上層、中層及び下層を含み、
前記画素電極は、前記コンタクトホールによって前記サブ金属層の前記上層の側辺に電気的に接続されることを特徴とする請求項1に記載の液晶表示パネル。 - 液晶表示パネルであって、
複数の画素領域を有する第一基板と、
前記第一基板上に設置される第一金属層と、
前記第一金属層上に設置される第一絶縁層と、
前記第一絶縁層上に設置される第二金属層と、
前記第二金属層上に設置される第二絶縁層と、
前記第二絶縁層上に設置される第三絶縁層と、
前記第三絶縁層上に設置される第四絶縁層と、
前記第四絶縁層上に設置される画素電極と、
第二基板と、
前記第一基板と前記第二基板との間に位置する液晶層と、を含み、
前記第一金属層、前記第一絶縁層、前記第二金属層、前記第二絶縁層、前記第三絶縁層及び前記第四絶縁層は、複数の前記画素領域のうちの少なくとも1つの中に位置し、
前記第三絶縁層は、第一方向に延び前記第三絶縁層の底面における外縁の任意の2点間の距離が最長距離になる第一長軸を有する第一パターン孔を含み、
前記第二絶縁層及び前記第四絶縁層には、第二方向に延び前記第三絶縁層の底面における外縁の任意の2点間の距離が最長距離になる第二長軸を有する第二パターン孔が形成され、
前記画素電極は、前記第一パターン孔及び前記第二パターン孔によって前記第二金属層に電気的に接続され、
前記第二パターン孔の前記第二長軸は、前記第一パターン孔の前記第一長軸よりも長いことを特徴とする液晶表示パネル。 - 前記第二パターン孔の前記第二長軸の一端から前記第一パターン孔までの最短距離は、第一最短距離とされ、
前記第二パターン孔の前記第二長軸の他端から前記第一パターン孔までの最短距離は、第二最短距離とされ、
前記第一最短距離は、前記第二最短距離よりも長いことを特徴とする請求項5に記載の液晶表示パネル。 - 前記第二パターン孔の一方の側壁は、前記第二方向に延びる線分に対して第一傾きを有し、
前記第二パターン孔の他方の側壁は、前記第二方向に延びる線分に対して第二傾きを有し、
前記第一傾きは、前記第二傾き以下であることを特徴とする請求項6に記載の液晶表示パネル。 - 前記第一基板の平面方向において、前記第二パターン孔は、前記第一パターン孔の対向する両側から突出する第一周縁部及び第二周縁部を有し、
前記第一周縁部及び前記第二周縁部は、それぞれ第一周長及び第二周長を有し、
前記第一周長は、前記第二周長よりも長いことを特徴とする請求項5に記載の液晶表示パネル。 - 前記第一基板の平面方向において、前記第一パターン孔は、前記第二パターン孔と第一重なり周長及び第二重なり周長で重なり、
前記第一重なり周長は、前記第二重なり周長よりも長いことを特徴とする請求項5に記載の液晶表示パネル。 - 前記第三絶縁層の側壁は、前記第一方向に延びる線分に対して異なる複数の傾きを有することを特徴とする請求項5に記載の液晶表示パネル。
- 前記第三絶縁層と前記第四絶縁層との間に位置する共通電極層をさらに含み、
前記共通電極層は、前記第一パターン孔及び前記第二パターン孔を囲むように形成される開口を有することを特徴とする請求項5に記載の液晶表示パネル。 - 前記第二金属層は、積層して配置される複数のサブ金属層を含み、
前記画素電極は、前記第二パターン孔によって前記第二金属層の表面に電気的に接続されることを特徴とする請求項5に記載の液晶表示パネル。 - 前記第二金属層は、積層して配置される複数のサブ金属層を含み、
前記サブ金属層は、上層、中層及び下層を含み、
前記画素電極は、前記第二パターン孔によって前記サブ金属層の前記上層の側辺に電気的に接続されることを特徴とする請求項5に記載の液晶表示パネル。 - 前記第二パターン孔の前記第二長軸が前記第一パターン孔の前記第一長軸より長く、
前記第一周縁部における前記第二長軸の一端から前記第一パターン孔までの最短距離を第一最短距離とし、前記第二周縁部における前記第二長軸の他端から前記第一パターン孔までの最短距離を第二最短距離とした場合に、前記第一最短距離が前記第二最短距離より長いことを特徴とする請求項1記載の液晶表示パネル。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510540381.7A CN106483725B (zh) | 2015-08-28 | 2015-08-28 | 液晶显示面板 |
CN201510540381.7 | 2015-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017045034A JP2017045034A (ja) | 2017-03-02 |
JP7027028B2 true JP7027028B2 (ja) | 2022-03-01 |
Family
ID=58095957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016107735A Active JP7027028B2 (ja) | 2015-08-28 | 2016-05-30 | 液晶表示パネル |
Country Status (3)
Country | Link |
---|---|
US (1) | US10553620B2 (ja) |
JP (1) | JP7027028B2 (ja) |
CN (2) | CN106483725B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6457879B2 (ja) * | 2015-04-22 | 2019-01-23 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
CN110277510B (zh) * | 2019-06-27 | 2021-03-23 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、以及显示装置 |
KR102657663B1 (ko) * | 2019-07-31 | 2024-04-16 | 삼성디스플레이 주식회사 | 백라이트 유닛 및 이를 포함하는 표시 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080251785A1 (en) | 2007-04-12 | 2008-10-16 | Noh Ji-Yong | Display device and method of fabricating the same |
WO2014103915A1 (ja) | 2012-12-27 | 2014-07-03 | シャープ株式会社 | 表示素子及び表示装置 |
JP3194341U (ja) | 2014-06-06 | 2014-11-13 | 群創光電股▲ふん▼有限公司Innolux Corporation | 薄膜トランジスタ基板 |
JP2015087600A (ja) | 2013-10-31 | 2015-05-07 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1331190C (zh) * | 2004-01-17 | 2007-08-08 | 统宝光电股份有限公司 | 一种显示面板的制作方法 |
EP2924498A1 (en) * | 2006-04-06 | 2015-09-30 | Semiconductor Energy Laboratory Co, Ltd. | Liquid crystal desplay device, semiconductor device, and electronic appliance |
JP5765369B2 (ja) * | 2013-05-22 | 2015-08-19 | 大日本印刷株式会社 | 反射型表示装置 |
-
2015
- 2015-08-28 CN CN201510540381.7A patent/CN106483725B/zh active Active
- 2015-08-28 CN CN201911232418.4A patent/CN111221191A/zh active Pending
-
2016
- 2016-05-30 JP JP2016107735A patent/JP7027028B2/ja active Active
- 2016-08-26 US US15/249,310 patent/US10553620B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080251785A1 (en) | 2007-04-12 | 2008-10-16 | Noh Ji-Yong | Display device and method of fabricating the same |
WO2014103915A1 (ja) | 2012-12-27 | 2014-07-03 | シャープ株式会社 | 表示素子及び表示装置 |
JP2015087600A (ja) | 2013-10-31 | 2015-05-07 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
JP3194341U (ja) | 2014-06-06 | 2014-11-13 | 群創光電股▲ふん▼有限公司Innolux Corporation | 薄膜トランジスタ基板 |
Also Published As
Publication number | Publication date |
---|---|
CN111221191A (zh) | 2020-06-02 |
US10553620B2 (en) | 2020-02-04 |
JP2017045034A (ja) | 2017-03-02 |
CN106483725A (zh) | 2017-03-08 |
US20170062489A1 (en) | 2017-03-02 |
CN106483725B (zh) | 2020-01-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11989060B2 (en) | Electronic device | |
US9904423B2 (en) | Touch electrode layer | |
JP3194341U (ja) | 薄膜トランジスタ基板 | |
US20110148781A1 (en) | Touch display panel | |
JP7027028B2 (ja) | 液晶表示パネル | |
CN107768402B (zh) | 具有阻挡装置的显示面板 | |
CN114730225B (zh) | 触控面板、触控显示面板和电子装置 | |
TWM528470U (zh) | 觸控面板 | |
JP2016126353A (ja) | 表示パネル | |
WO2018214662A1 (zh) | 静电释放电路及其制作方法和显示装置 | |
WO2019007136A1 (zh) | 阵列基板、其制备方法和显示面板 | |
US20240012506A1 (en) | Touch control structure and display apparatus | |
US20220317814A1 (en) | Touch control structure and display apparatus | |
KR102430807B1 (ko) | 플렉서블 터치 스크린 패널 및 그 제조 방법 | |
US11249584B2 (en) | Touch substrate, manufacturing method thereof and touch screen | |
TWI597830B (zh) | 顯示裝置 | |
TWI595290B (zh) | 顯示裝置 | |
JP3196528U (ja) | 表示パネル | |
TWI612645B (zh) | 顯示面板 | |
TWI595298B (zh) | 顯示面板 | |
TWI548921B (zh) | 顯示面板 | |
CN106873267B (zh) | 显示面板 | |
US11983341B2 (en) | Touch control structure and display apparatus | |
WO2022061923A1 (en) | Touch control structure and display apparatus | |
TW201823815A (zh) | 畫素結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20190517 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200707 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20201007 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201110 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210202 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210907 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211126 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20211217 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220201 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220216 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7027028 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |