JP7020673B2 - Break device, break method, and break plate - Google Patents

Break device, break method, and break plate Download PDF

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JP7020673B2
JP7020673B2 JP2018028624A JP2018028624A JP7020673B2 JP 7020673 B2 JP7020673 B2 JP 7020673B2 JP 2018028624 A JP2018028624 A JP 2018028624A JP 2018028624 A JP2018028624 A JP 2018028624A JP 7020673 B2 JP7020673 B2 JP 7020673B2
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break
substrate
cutting edge
plate
groove
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JP2019145676A (en
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健二 村上
健太 田村
光希 栄田
真和 武田
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Mitsuboshi Diamond Industrial Co Ltd
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Priority to CN201910087138.2A priority patent/CN110176396B/en
Priority to KR1020190018776A priority patent/KR102655769B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/52—Ceramics

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Removal Of Insulation Or Armoring From Wires Or Cables (AREA)

Description

本発明は、一方主面に半田ボールが設けられた基板のブレークに関する。 The present invention relates to a break in a substrate provided with a solder ball on one side.

シリコン基板層とガラス基板層とを接着層にて貼り合わせてなる構成を有する半導体チップの一種として、シリコン基板層の上に半田ボールを備えるものがある。係る半導体チップの作製手法として、シリコン基板とガラス基板とを接着層にて貼り合わせてなる貼り合わせ基板のガラス基板側の分割予定位置にスクライブラインを形成し、シリコン基板側の分割予定位置には接着層にまで達する溝部（ダイシング溝）を形成したうえで、半田ボールをシリコン基板の上の所定位置に形成し、係る半田ボールの形成後にブレーク（ブレイク）を行うことによって、スクライブラインとダイシング溝との間において分断を進行させ、これによって貼り合わせ基板を分割して多数の当該半導体チップを得る、という手法がすでに公知である（例えば、特許文献１参照）。 As a kind of semiconductor chip having a structure in which a silicon substrate layer and a glass substrate layer are bonded together by an adhesive layer, there is one provided with a solder ball on the silicon substrate layer. As a method for manufacturing such a semiconductor chip, a scribing line is formed at a planned division position on the glass substrate side of a bonded substrate in which a silicon substrate and a glass substrate are bonded by an adhesive layer, and at the planned division position on the silicon substrate side. After forming a groove (dicing groove) that reaches the adhesive layer, a solder ball is formed at a predetermined position on the silicon substrate, and a break is performed after the solder ball is formed to form a scribing line and a dicing groove. A method of advancing the division between the silicon and the silicon and thereby dividing the bonded substrate to obtain a large number of the semiconductor chips is already known (see, for example, Patent Document 1).

また、脆性材料基板のブレークに用いるブレークバーとして、所定の刃先角を有するとともに所定の曲率半径の円弧状をなしている刃先を備えるものも、すでに公知である（例えば、特許文献２参照）。 Further, as a break bar used for breaking a brittle material substrate, a break bar having a cutting edge having a predetermined cutting edge angle and having an arc shape having a predetermined radius of curvature is already known (see, for example, Patent Document 2).

特開２０１７－００５０６７号公報Japanese Unexamined Patent Publication No. 2017-005067 特開２０１５－８３３３７号公報JP-A-2015-83337

チップの小型化の要請などの理由から、半田ボールと分割予定位置との距離が小さい半田ボール付き貼り合わせ基板を、特許文献１に開示されているような態様にてブレークしようとする場合、ブレークの途中においてブレークバーが半田ボールと接触してしまい、良好なブレーク（基板の分断）が行えず、ブレーク後のチップの形状が規格をみたさないなどの不具合が発生することがある。 When a bonded substrate with solder balls, in which the distance between the solder balls and the planned division position is small, is to be broken in the manner disclosed in Patent Document 1, for reasons such as a request for miniaturization of the chip, a break occurs. The break bar may come into contact with the solder ball in the middle of the process, and a good break (division of the board) may not be possible, resulting in problems such as the shape of the chip after the break not meeting the standard.

本発明は、半田ボール付き基板を好適にブレークすることができるブレーク装置を提供することを目的とする。 An object of the present invention is to provide a break device capable of suitably breaking a substrate with solder balls.

上記課題を解決するため、請求項１の発明は、一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークするブレーク装置であって、前記半田ボール付き基板が前記一方主面側を上側として水平姿勢にて載置されるステージと、一方端部に備わる刃先が下端部となる垂直姿勢にて昇降自在に設けられた薄板状のブレークプレートと、を備え、前記刃先を前記溝部に当接させた状態から、前記ブレークプレートを前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことで、前記半田ボール付き基板を前記溝部の形成箇所においてブレークするようになっており、前記ブレークプレートにおいては、前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さい、ことを特徴とする。 In order to solve the above problems, the invention of claim 1 is a break device for breaking a substrate with solder balls provided with a plurality of solder balls on one main surface along a groove provided on the one main surface. A thin plate-shaped substrate on which the substrate with solder balls is placed in a horizontal position with the main surface side facing up and a vertical position in which the cutting edge provided at one end is the lower end. A break plate is provided, and the break plate is pushed toward the solder ball-attached substrate by a predetermined pushing amount from a state where the cutting edge is in contact with the groove portion, whereby the solder ball-attached substrate is pushed into the groove portion. In the break plate, the blade portion including the cutting edge extends from one end of the base having a predetermined thickness and is provided narrower than the base. The thickness of the blade portion is smaller than twice the minimum value of the distance between the center of the cross section of the groove portion and the solder ball when the break plate is pushed.

請求項２の発明は、一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークする方法であって、前記半田ボール付き基板を前記一方主面側を上側として水平姿勢とする工程と、一方端部に刃先を備える薄板状のブレークプレートを前記刃先が下端部となる垂直姿勢とし、前記刃先を前記溝部に当接させたうえで、前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことによって、前記半田ボール付き基板を前記溝部の形成箇所においてブレークする工程と、を備え、前記ブレークプレートとして、前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さいものを用いる、ことを特徴とする。 The invention of claim 2 is a method of breaking a substrate with solder balls provided with a plurality of solder balls on one main surface along a groove provided on the one main surface, wherein the substrate with solder balls is described. On the other hand, the process of making the main surface side the upper side and the horizontal posture, and the thin plate-shaped break plate having the cutting edge at one end in the vertical posture in which the cutting edge is the lower end, and the cutting edge being brought into contact with the groove portion. A step of breaking the solder ball-equipped substrate at a groove forming portion by pushing the solder ball-attached substrate toward the solder ball-attached substrate by a predetermined pushing amount, and the cutting edge portion including the cutting edge as the break plate. However, it extends from one end of the base portion having a predetermined thickness and is provided narrower than the base portion, and the thickness of the blade portion is the cross section of the groove portion when the break plate is pushed in. It is characterized in that a ball smaller than twice the minimum value of the distance between the center and the solder ball is used.

請求項３の発明は、一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークする際に用いるブレークプレートであって、一方端部に刃先を備える薄板状をなしており、前記刃先が下端部となる垂直姿勢において、前記刃先を、前記一方主面側を上側として水平姿勢とした前記半田ボール付き基板の前記溝部に当接させたうえで、前記ブレークプレートを前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことによって、前記半田ボール付き基板を前記溝部の形成箇所においてブレークすることが可能とされており、前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さい、ことを特徴とする。 The invention of claim 3 is a break plate used when a substrate with solder balls provided with a plurality of solder balls on one main surface is broken along a groove provided on the one main surface, and the one end portion thereof. In a vertical posture in which the cutting edge is the lower end portion, the cutting edge is brought into contact with the groove portion of the solder ball-attached substrate in a horizontal posture with the one main surface side facing up. Then, by pushing the break plate toward the solder ball-attached substrate with a predetermined pushing amount, the solder ball-attached substrate can be broken at the groove forming portion, and the cutting edge can be broken. The blade portion including the above extends from one end of the base portion having a predetermined thickness and is provided narrower than the base portion, and the thickness of the blade portion is such that when the break plate is pushed in. It is characterized in that it is smaller than twice the minimum value of the distance between the center of the cross section of the groove and the solder ball.

請求項１ないし請求項３の発明によれば、半田ボールとブレークプレートとの接触を生じさせることなく、半田ボール付基板を好適にブレークすることができる。 According to the first to third aspects of the invention, the substrate with solder balls can be suitably broken without causing contact between the solder balls and the break plate.

ブレーク装置１００を用いて貼り合わせ基板１０をブレークする様子を概略的に示す図である。It is a figure which shows the state which breaks the bonded substrate 10 by using the break apparatus 100. ブレーク処理の開始時におけるダイシング溝ＤＧの近傍の様子を示す図である。It is a figure which shows the state of the vicinity of a dicing groove DG at the start of a break process. ブレーク処理の途中におけるダイシング溝ＤＧの近傍の様子を示す図である。It is a figure which shows the state of the vicinity of a dicing groove DG in the middle of a break process.

＜貼り合わせ基板とブレーク装置の概要＞
図１は、本実施の形態に係るブレーク装置１００を用いて貼り合わせ基板１０をブレークする様子を概略的に示す図である。 <Overview of bonded board and break device>
FIG. 1 is a diagram schematically showing a state in which the bonded substrate 10 is broken by using the break device 100 according to the present embodiment.

貼り合わせ基板１０は、例えば脆性材料からなる第一の基板１と第二の基板２とを接着することで貼り合わせ、全体として一の基板としてなるものである。第一の基板１としては、ホウ珪酸ガラス、無アルカリガラス、ソーダガラス等のアルカリガラスなどといった種々のガラス製の基板（ガラス基板）の他、セラミック基板が例示される。第二の基板２としては、シリコン基板の他、熱硬化樹脂基板が例示される。以下においては、第一の基板１がガラス基板であり、第二の基板２がシリコン基板である場合を対象に説明を行うものとし、第一の基板１を単にガラス基板１と記し、第二の基板２を単にシリコン基板２と記すこととする。 The bonded substrate 10 is bonded by adhering, for example, a first substrate 1 made of a brittle material and a second substrate 2, and becomes one substrate as a whole. Examples of the first substrate 1 include various glass substrates (glass substrates) such as borosilicate glass, non-alkali glass, and alkali glass such as soda glass, as well as ceramic substrates. As the second substrate 2, a thermosetting resin substrate is exemplified in addition to the silicon substrate. In the following, the description will be made for the case where the first substrate 1 is a glass substrate and the second substrate 2 is a silicon substrate, the first substrate 1 is simply referred to as a glass substrate 1, and the second substrate 2 is described. The substrate 2 of the above is simply referred to as a silicon substrate 2.

加えて、本実施の形態においては、図１に示すように、貼り合わせ基板１０のシリコン基板２側の主面に、所定の間隔および周期にて、複数の半田ボールＳＢが設けられてなるものとする。以降、係る貼り合わせ基板１０を、半田ボール付き貼り合わせ基板１０とも称する。 In addition, in the present embodiment, as shown in FIG. 1, a plurality of solder balls SB are provided on the main surface of the bonded substrate 10 on the silicon substrate 2 side at predetermined intervals and cycles. And. Hereinafter, the bonded substrate 10 is also referred to as a bonded substrate 10 with solder balls.

半田ボール付き貼り合わせ基板１０は、所定の位置で分割されることにより得られる多数の個片がそれぞれ、例えば半導体チップなどのデバイスとして供されるものである。換言すれば、半田ボール付き貼り合わせ基板１０は、分割によって多数個のデバイスが得られる母基板である。 In the bonded substrate 10 with solder balls, a large number of pieces obtained by being divided at predetermined positions are each provided as a device such as a semiconductor chip. In other words, the bonded substrate 10 with solder balls is a mother substrate from which a large number of devices can be obtained by division.

分割を行う位置である分割予定位置はあらかじめ定められてなる。本実施の形態においては、ガラス基板１側の主面における分割予定位置にはスクライブラインＳＬが形成され、シリコン基板２側の主面における分割予定位置にはダイシング溝（溝部）ＤＧが形成された半田ボール付き貼り合わせ基板１０を対象に、ブレーク装置１００を用いたブレーク処理を行い、分割予定位置に沿った分断（半田ボール付き貼り合わせ基板１０の分割）を行うものとする。 The planned division position, which is the position where the division is performed, is predetermined. In the present embodiment, a scribe line SL is formed at the planned division position on the main surface on the glass substrate 1 side, and a dicing groove (groove portion) DG is formed at the planned division position on the main surface on the silicon substrate 2 side. It is assumed that a break process is performed on the bonded substrate 10 with solder balls using the break device 100, and division (division of the bonded substrate 10 with solder balls 10) is performed along a planned division position.

なお、スクライブラインＳＬは、公知のスクライブツール（例えばカッターホイールやダイヤモンドポイントなど）を用いたスクライブにより形成が可能である。一方、ダイシング溝ＤＧは、公知のダイサーにより形成が可能である。 The scribe line SL can be formed by scribe using a known scribe tool (for example, a cutter wheel, a diamond point, etc.). On the other hand, the dicing groove DG can be formed by a known dicer.

ブレーク装置１００は、弾性体からなり、上面１０１ａに貼り合わせ基板１０が水平に載置される支持部１０１と、該支持部１０１を下方から支持するベース部１０２とから構成され、水平方向に移動自在でありかつ面内方向に回転自在に設けられたステージ１１０と、所定の刃渡り方向に延在してなる刃先１０３ｅを一方端部に有し、当該刃先１０３ｅが下側となる姿勢にて鉛直方向に昇降自在とされてなるブレークプレート１０３とを、主として備える。 The break device 100 is made of an elastic body, and is composed of a support portion 101 on which the laminated substrate 10 is horizontally placed on the upper surface 101a and a base portion 102 that supports the support portion 101 from below, and moves in the horizontal direction. It has a stage 110 that is flexible and rotatable in the in-plane direction, and a cutting edge 103e extending in a predetermined blade crossing direction at one end, and is vertically oriented with the cutting edge 103e on the lower side. It mainly includes a break plate 103 that can be raised and lowered in a direction.

図１においては、分割予定位置に応じて等間隔に設けられたスクライブラインＳＬとダイシング溝ＤＧとが図面に垂直な方向に延在するように、半田ボール付き貼り合わせ基板１０が支持部１０１の上面１０１ａに載置されてなるとともに、ある分割予定位置についてのダイシング溝ＤＧの鉛直上方に、ブレークプレート１０３が（より詳細にはその刃先１０３ｅが）、分割予定位置の延在方向に沿って配置されてなる場合を示している。なお図１においては、水平面内において分割予定位置を示すスクライブラインＳＬおよびダイシング溝ＤＧが等間隔に並んでいる方向をｘ軸方向とし、これらスクライブラインＳＬおよびダイシング溝ＤＧが延在する方向をｙ軸方向とし、鉛直方向をｚ軸方向とする右手系のｘｙｚ座標を付している（以降の図も同様）。 In FIG. 1, the bonded substrate 10 with solder balls is attached to the support portion 101 so that the scribe lines SL and the dicing groove DG provided at equal intervals according to the planned division positions extend in the direction perpendicular to the drawing. A break plate 103 (more specifically, its cutting edge 103e) is placed vertically above the dicing groove DG at a certain planned division position along the extending direction of the planned division position while being placed on the upper surface 101a. It shows the case where it is made. In FIG. 1, the direction in which the scribing line SL and the dicing groove DG indicating the planned division positions in the horizontal plane are arranged at equal intervals is the x-axis direction, and the direction in which the scribing line SL and the dicing groove DG extend is y. The xyz coordinates of the right-handed system with the axial direction as the z-axis direction and the vertical direction as the z-axis direction are attached (the same applies to the following figures).

支持部１０１は、硬度が６５°～９５°、好ましくは７０°～９０°、例えば８０°である材質の弾性体にて形成されるのが好適である。係る支持部１０１としては、例えばウレタンゴム、シリコーンゴムなどを好適に用いることができる。一方、ベース部１０２は、硬質の（弾性を有していない）部材からなる。 The support portion 101 is preferably formed of an elastic body made of a material having a hardness of 65 ° to 95 °, preferably 70 ° to 90 °, for example, 80 °. As the support portion 101, for example, urethane rubber, silicone rubber, or the like can be preferably used. On the other hand, the base portion 102 is made of a hard (non-elastic) member.

ブレークプレート１０３は、ｙ軸方向に長手方向（刃渡り方向である）を有する金属製の薄板部材であり、図示しない昇降機構への取り付け部などを有してなり使用時に上側となる基部１０３ａと、使用時に該基部１０３ａの下端部となる部分から延在してなる、基部１０３ａよりも幅狭（狭厚）な部分であって、かつ、先端に刃先１０３ｅを備える刃部１０３ｂと、を有する。すなわち、本実施の形態においてブレークに用いられるブレークプレート１０３は、刃先１０３ｅから相当の範囲が、基部１０３ａよりも幅狭に設けられた構成を有する。このような形状を有するブレークプレート１０３は概略、所定厚みの薄板を研削加工ことによって得ることができる。 The break plate 103 is a metal thin plate member having a longitudinal direction (blade crossing direction) in the y-axis direction, and has a base portion 103a which has a mounting portion for an elevating mechanism (not shown) and is on the upper side when used. It has a blade portion 103b that extends from a portion that becomes a lower end portion of the base portion 103a at the time of use and is narrower (thinner) than the base portion 103a and has a cutting edge 103e at the tip. That is, the break plate 103 used for the break in the present embodiment has a configuration in which a considerable range from the cutting edge 103e is provided narrower than the base 103a. The break plate 103 having such a shape can be roughly obtained by grinding a thin plate having a predetermined thickness.

ブレークプレート１０３の詳細については後述する。 The details of the break plate 103 will be described later.

図１に示すように、半田ボール付き貼り合わせ基板１０は、ブレークに際し、ダイシング溝ＤＧが形成されてなるシリコン基板２の側が最上部となり、スクライブラインＳＬが形成されてなるガラス基板１の側が最下部となるように、支持部１０１の上面１０１ａ上に載置される。そして、ブレーク装置１００におけるブレーク処理は、概略、ダイシング溝ＤＧの形成位置に向けてブレークプレート１０３を下降させ、刃先１０３ｅが当該形成位置においてシリコン基板２に当接した後もブレークプレート１０３を押し下げるという態様にて、行われる。この押し下げによって、ダイシング溝ＤＧの鉛直下方におけるガラス基板１側の主面に形成されてなるスクライブラインＳＬからダイシング溝ＤＧに向けて亀裂が伸展し、これによって半田ボール付き貼り合わせ基板１０が分断される。 As shown in FIG. 1, in the bonded substrate 10 with solder balls, the side of the silicon substrate 2 on which the dicing groove DG is formed is the uppermost portion, and the side of the glass substrate 1 on which the scribe line SL is formed is the highest on the break. It is placed on the upper surface 101a of the support portion 101 so as to be a lower portion. Then, the break process in the break device 100 generally lowers the break plate 103 toward the formation position of the dicing groove DG, and pushes down the break plate 103 even after the cutting edge 103e abuts on the silicon substrate 2 at the formation position. It is done in an embodiment. By this pushing down, a crack extends from the scribe line SL formed on the main surface on the glass substrate 1 side vertically below the dicing groove DG toward the dicing groove DG, thereby dividing the bonded substrate 10 with solder balls. Ru.

なお、図１においては、半田ボール付き貼り合わせ基板１０が、基板固定テープ３に貼付されたうえで支持部１０１に載置されてなる場合を、示している。より詳細には、係る場合、基板固定テープ３は、あらかじめ図示しない平板かつ環状の保持リングに張設されてなる。 Note that FIG. 1 shows a case where the bonded substrate 10 with solder balls is attached to the substrate fixing tape 3 and then mounted on the support portion 101. More specifically, in this case, the substrate fixing tape 3 is stretched on a flat plate and an annular holding ring (not shown in advance).

さらに、ブレークに際しては、図１に示すように、半田ボール付き貼り合わせ基板１０の上面側に保護フィルム４が貼付されていてもよい。また、図１においては半田ボール付貼り合わせ基板１０の下面（ガラス基板１の側）に基板固定テープ３が貼付されているが、上面側に基板固定テープ３が貼付され、下面側に保護フィルム４が貼付されるようにしてもよい。 Further, at the time of break, as shown in FIG. 1, the protective film 4 may be attached to the upper surface side of the bonded substrate 10 with solder balls. Further, in FIG. 1, the substrate fixing tape 3 is attached to the lower surface (the side of the glass substrate 1) of the bonded substrate 10 with solder balls, but the substrate fixing tape 3 is attached to the upper surface side and the protective film is attached to the lower surface side. 4 may be attached.

＜ブレーク処理とブレークプレートの詳細＞
図２は、ブレーク処理の開始時におけるダイシング溝ＤＧの近傍の様子を示す図である。図３は、ブレーク処理の途中におけるダイシング溝ＤＧの近傍の様子を示す図である。以降、ブレークプレート１０３においては、刃部１０３ｂは基部１０３ａから所定の長さＬにて延在しており、刃先１０３ｅを除く部分の厚み（幅）がｗであり、刃先１０３ｅは、刃先角θを有し、かつ先端部は曲率半径ｒの円弧状をなしているものとする。刃先角θは５°～９０°程度であり、曲率半径ｒは５μｍ～１００μｍ程度である。 <Details of break processing and break plate>
FIG. 2 is a diagram showing a state in the vicinity of the dicing groove DG at the start of the break process. FIG. 3 is a diagram showing a state in the vicinity of the dicing groove DG during the break process. Hereinafter, in the break plate 103, the blade portion 103b extends from the base portion 103a with a predetermined length L, the thickness (width) of the portion excluding the cutting edge 103e is w, and the cutting edge 103e has a cutting edge angle θ. And the tip portion is in the shape of an arc with a radius of curvature r. The cutting edge angle θ is about 5 ° to 90 °, and the radius of curvature r is about 5 μm to 100 μm.

上述のように、ブレーク装置１００におけるブレーク処理は、ブレークプレート１０３を、ダイシング溝ＤＧの形成位置に向けて下降させ、当該形成位置においてシリコン基板２に当接させることにより行われる。より詳細には、ブレークプレート１０３の断面中心（刃渡り方向に垂直な断面でもあるｚｘ断面の線対称中心）Ｃ１が、ダイシング溝ＤＧの断面中心（ｚｘ断面の線対称中心）Ｃ２と一致するように、ブレークプレート１０３に対するステージ１１０の位置決めがなされたうえで行われる。 As described above, the break process in the break device 100 is performed by lowering the break plate 103 toward the formation position of the dicing groove DG and bringing it into contact with the silicon substrate 2 at the formation position. More specifically, the cross-section center of the break plate 103 (the center of line symmetry of the zx cross section which is also the cross section perpendicular to the blade crossing direction) C1 coincides with the center of the cross section of the dicing groove DG (the center of line symmetry of the zx cross section) C2. , The stage 110 is positioned with respect to the break plate 103.

図２に示すように、ブレークを開始するべく下降させられたブレークプレート１０３の刃先１０３ｅはまず、互いに対向するダイシング溝ＤＧの一対のエッジ（端部）Ｅに当接することになる。このとき、ダイシング溝ＤＧの少なくとも片側の近傍に、半田ボールＳＢが存在していることがあるが、本実施の形態においては、刃先１０３ｅを含む刃部１０３ｂを幅狭に設けることで、刃先１０３ｅを当接させるに際して、当該半田ボールＳＢとの接触を回避するようにしている。図２においてはダイシング溝ＤＧの両側近傍に半田ボールＳＢ（ＳＢ１、ＳＢ２）が存在している場合を例示している。ただし、これらの半田ボールＳＢ１、ＳＢ２は、ダイシング溝ＤＧから等距離にあるとは限らない。 As shown in FIG. 2, the cutting edge 103e of the break plate 103 lowered to start the break first comes into contact with a pair of edges (ends) E of the dicing grooves DG facing each other. At this time, the solder ball SB may be present in the vicinity of at least one side of the dicing groove DG. However, in the present embodiment, the cutting edge 103e including the cutting edge 103e is provided in a narrow width so that the cutting edge 103e is provided. Is made to avoid contact with the solder ball SB when the solder balls are brought into contact with each other. FIG. 2 illustrates a case where solder balls SB (SB1, SB2) are present in the vicinity of both sides of the dicing groove DG. However, these solder balls SB1 and SB2 are not always equidistant from the dicing groove DG.

本実施の形態に係るブレーク装置１００においては、上述した半田ボールＳＢとの接触にも関係する、刃部１０３ｂの厚みｗの定め方が（特に上限値の定め方が）、特徴的である。この点について、図３に基づき説明する。 In the break device 100 according to the present embodiment, the method of determining the thickness w of the blade portion 103b (particularly the method of determining the upper limit value), which is related to the contact with the solder ball SB described above, is characteristic. This point will be described with reference to FIG.

図３は、図２にて示した、ブレークプレート１０３の刃先１０３ｅがダイシング溝ＤＧのエッジＥに当接した状態からさらに、ブレークプレート１０３を所定の押し込み量で矢印ＡＲ２にて示すように鉛直下方に押し込んだ（押し下げた）ときの様子を示している。 FIG. 3 shows the break plate 103 vertically downward as shown by the arrow AR2 with a predetermined pushing amount from the state where the cutting edge 103e of the break plate 103 is in contact with the edge E of the dicing groove DG shown in FIG. It shows the state when it is pushed (pushed down) into.

ただし、図３においては対比のため、図２に示した、刃先１０３ｅがダイシング溝ＤＧのエッジＥと当接するタイミングでのブレークプレート１０３についても二点鎖線にて示し、当該タイミングでの半田ボール付き貼り合わせ基板１０の半田ボールＳＢおよびシリコン基板２については、破線にて示している。 However, for comparison in FIG. 3, the break plate 103 at the timing when the cutting edge 103e abuts on the edge E of the dicing groove DG, which is shown in FIG. The solder ball SB of the bonded substrate 10 and the silicon substrate 2 are shown by broken lines.

図３に示すように、ブレークプレート１０３が押し込まれると、これに伴い刃先１０３ｅが当接しているダイシング溝ＤＧのエッジＥの近傍部分が下降し、それまで水平であったシリコン基板２の上面が、エッジＥの側が斜め下側となる向きに傾斜するようになる。このとき、ダイシング溝ＤＧを介して互いに反対側に設けられてなる半田ボールＳＢ１、ＳＢ２はそれぞれ、押し込み前と比べると、面内方向においてブレークプレート１０３に近づくことになる。それゆえ、ブレークに際してブレークプレート１０３の刃部１０３ｂが半田ボールＳＢとの接触が生じないようにするためには、このようにブレークプレート１０３が押し込まれたときの状況に基づき、刃部１０３ｂの厚みｗを定める必要がある。 As shown in FIG. 3, when the break plate 103 is pushed in, the portion near the edge E of the dicing groove DG with which the cutting edge 103e is in contact is lowered, and the upper surface of the silicon substrate 2 which has been horizontal until then is lowered. , The side of the edge E is inclined in the direction of the diagonally lower side. At this time, the solder balls SB1 and SB2 provided on opposite sides of each other via the dicing groove DG are closer to the break plate 103 in the in-plane direction than before being pushed in, respectively. Therefore, in order to prevent the blade portion 103b of the break plate 103 from coming into contact with the solder ball SB at the time of a break, the thickness of the blade portion 103b is based on the situation when the break plate 103 is pushed in. It is necessary to determine w.

具体的には、係る押し込み状態における半田ボールＳＢ１、ＳＢ２とダイシング溝ＤＧの断面中心Ｃ２との水平距離をそれぞれｔ１、ｔ２とするとき、
ｗ＜２・Ｍｉｎ（ｔ１，ｔ２） ・・・・（１）
という関係をみたすように、刃部１０３ｂの厚みｗを定めればよい。 Specifically, when the horizontal distances between the solder balls SB1 and SB2 and the cross-sectional center C2 of the dicing groove DG in the pushed state are t1 and t2, respectively.
w <2 ・ Min (t1, t2) ・ ・ ・ ・ (1)
The thickness w of the blade portion 103b may be determined so as to satisfy the above relationship.

確認的にいえば、刃先１０３ｅがダイシング溝ＤＧのエッジＥに当接するまでの半田ボールＳＢ１、ＳＢ２とダイシング溝ＤＧの断面中心Ｃ２との水平距離をそれぞれｄ１、ｄ２とするとき、ｄ１＞ｔ１、ｄ２＞ｔ２であることから、（１）式がみたされれば自ずから、刃先１０３ｅがエッジＥに到達するまでの間にブレークプレート１０３が半田ボールＳＢと接触することも回避される。 To confirm, when the horizontal distances between the solder balls SB1 and SB2 until the cutting edge 103e abuts on the edge E of the dicing groove DG and the cross-sectional center C2 of the dicing groove DG are d1 and d2, respectively, d1> t1. Since d2> t2, if the equation (1) is satisfied, it is naturally prevented that the break plate 103 comes into contact with the solder ball SB until the cutting edge 103e reaches the edge E.

（１）式を満たす具体的な厚みｗの設定は、図３に示したようなブレークプレート１０３の押し込みの様子をシミュレーションした結果に基づいて行われてもよいし、実際に接触が生じない値を実験的に特定することによりなされてもよい。 The specific thickness w that satisfies the equation (1) may be set based on the result of simulating the pushing state of the break plate 103 as shown in FIG. 3, or a value at which contact does not actually occur. May be done experimentally.

例えば、ダイシング溝ＤＧの幅が４０μｍであり、ブレークを行わない状態における半田ボールＳＢとダイシング溝ＤＧとの水平距離の最小値（ｄ１またはｄ２）が９０μｍである半田ボール付き貼り合わせ基板１０について、刃先角θが１５°であり曲率半径ｒが２５μｍであるブレークプレート１０３を８０μｍの押し込み量で押し込むことによりブレークを行う場合であれば、ブレーク時の半田ボールＳＢとダイシング溝ＤＧとの水平距離の最小値（ｔ１またはｔ２）は７０μｍとなるので、刃部１０３ｂの厚みｗをこの値の２倍よりも小さくすることで、良好なブレークを行うことができる。 For example, regarding the bonded substrate 10 with solder balls, the width of the dicing groove DG is 40 μm, and the minimum value (d1 or d2) of the horizontal distance between the solder ball SB and the dicing groove DG in a state where no break is performed is 90 μm. When a break is performed by pushing the break plate 103 having a cutting edge angle θ of 15 ° and a radius of curvature r of 25 μm with a pushing amount of 80 μm, the horizontal distance between the solder ball SB and the dicing groove DG at the time of the break Since the minimum value (t1 or t2) is 70 μm, a good break can be performed by making the thickness w of the blade portion 103b smaller than twice this value.

ただし、当然ながら、厚みｗはいくらでも小さくできるわけではなく、ブレークプレート１０３を得るための研削加工における加工限界や、ブレークプレート１０３に用いる金属材料の強度や、ブレーク実行時にブレークプレート１０３に求められる強度などに応じて、最小限必要とされる値があり、実際にブレークプレート１０３を作製する際には、この点も考慮する必要がある。具体的には、例えばブレークプレート１０３の材質が超硬合金である場合には、基部１０３ａの厚みを４００μｍ以上とする前提で、刃部１０３ｂの厚みｗについては、５０μｍ以上が必要である。 However, as a matter of course, the thickness w cannot be reduced as much as possible, and the processing limit in the grinding process for obtaining the break plate 103, the strength of the metal material used for the break plate 103, and the strength required for the break plate 103 when the break is executed. There is a minimum required value depending on the above, and this point also needs to be taken into consideration when actually manufacturing the break plate 103. Specifically, for example, when the material of the break plate 103 is a cemented carbide, the thickness w of the blade portion 103b needs to be 50 μm or more on the premise that the thickness of the base 103a is 400 μm or more.

一方、刃部１０３ｂの長さ（基部１０３ａの下端部から刃先１０３ｅ先端までの距離）Ｌは、刃先１０３ｅがダイシング溝ＤＧのエッジに当接しない状態における、半田ボールＳＢと基部１０３ａとの距離が、ブレークの際のブレークプレート１０３の押し込み量よりも大きくなるように、定められればよい。係る場合、半田ボールＳＢが基部１０３ａと接触することが回避される。この点に関連していえば、ブレークプレート１０３自体の強度確保の観点からは、刃部１０３ｂの長さＬを、基部１０３ａの長さに比してなるべく小さくする方が好ましい。 On the other hand, the length L of the blade portion 103b (distance from the lower end portion of the base portion 103a to the tip end of the cutting edge 103e) is such that the distance between the solder ball SB and the base portion 103a in a state where the cutting edge 103e does not abut on the edge of the dicing groove DG. , It may be determined so as to be larger than the pushing amount of the break plate 103 at the time of breaking. In such a case, the solder ball SB is prevented from coming into contact with the base 103a. In relation to this point, from the viewpoint of ensuring the strength of the break plate 103 itself, it is preferable to make the length L of the blade portion 103b as small as possible with respect to the length of the base portion 103a.

なお、本実施の形態においては図１ないし図３において刃先１０３ｅを除き刃部１０３ｂの厚みｗが一定となっているが、刃部１０３ｂが全体としてテーパー状をなしていてもよく、この場合は、刃部１０３のうち、ブレークプレート１０３を押し込んだときに半田ボールＳＢとの接触が懸念される範囲について刃部１０３ｂの幅ｗが（１）式をみたすようになっていればよい。 In the present embodiment, the thickness w of the blade portion 103b is constant except for the cutting edge 103e in FIGS. 1 to 3, but the blade portion 103b may have a tapered shape as a whole. Of the blade portions 103, the width w of the blade portion 103b may satisfy the equation (1) in a range where contact with the solder ball SB is a concern when the break plate 103 is pushed in.

また、本実施の形態においては、刃部１０３ｂがダイシング溝ＤＧの端部Ｅに接触するようにされているが、このことは、本実施の形態に係るブレークプレート１０３を備えるブレーク装置１００を、ダイシング溝ＤＧの幅が刃部１０３ｂの厚みｗに比して充分に大きい半田ボール付き貼り合わせ基板の分断に用いることを、妨げるものではない。係る場合、刃部１０３ｂをダイシング溝ＤＧの底部に当接させる態様にて、ブレークが行われる。 Further, in the present embodiment, the blade portion 103b is made to come into contact with the end portion E of the dicing groove DG, which means that the break device 100 provided with the break plate 103 according to the present embodiment is provided with the break device 100. It does not prevent the dicing groove DG from being used for dividing the bonded substrate with solder balls, which is sufficiently larger than the thickness w of the blade portion 103b. In such a case, the break is performed in such a manner that the blade portion 103b is brought into contact with the bottom portion of the dicing groove DG.

ところで、本実施の形態に係るブレークプレート１０３のように、相対的に厚みの大きな基部１０３ａと、相対的に厚みが小さい刃部１０３ｂとを設ける代わりに、全体の厚みが一様に、本実施の形態に係るブレークプレート１０３の刃部１０３ｂと同程度であるようなブレークプレートを用いることによっても、半田ボールＳＢとの接触は回避できるようにも思えるが、実際には、ブレークプレート１０３自体の強度が十分に得られず、また、加工も困難となるため、当該構成を採用することは好ましくない。 By the way, instead of providing the base portion 103a having a relatively large thickness and the blade portion 103b having a relatively small thickness as in the break plate 103 according to the present embodiment, the present embodiment has a uniform overall thickness. Although it seems that contact with the solder ball SB can be avoided by using a break plate having the same degree as the blade portion 103b of the break plate 103 according to the above embodiment, in reality, the break plate 103 itself It is not preferable to adopt this configuration because sufficient strength cannot be obtained and processing becomes difficult.

以上、説明したように、本実施の形態によれば、あらかじめ分割予定位置にスクライブラインとダイシング溝とが形成された半田ボール付き貼り合わせ基板を、ブレーク装置においてブレークする際に、ブレークプレートとして、刃先を含む所定範囲が基部よりも幅狭の刃部であり、係る刃部の厚みを、ブレークプレートを押し込んだ際の半田ボールの位置に基づいて定めたものを用いることで、半田ボールとブレークプレートとの接触を生じさせることなく、好適にブレークを行うことができる。 As described above, according to the present embodiment, when a bonded substrate with solder balls having a scribing line and a dicing groove formed in advance at a planned division position is broken in a break device, it is used as a break plate. A predetermined range including the cutting edge is a blade portion narrower than the base portion, and the thickness of the cutting edge portion is determined based on the position of the solder ball when the break plate is pushed in, so that the solder ball and the break can be used. The break can be suitably performed without causing contact with the plate.

１ ガラス基板
２ シリコン基板
３ 基板固定テープ
４ 保護フィルム
１０ （半田ボール付き）貼り合わせ基板
１００ ブレーク装置
１０１ 支持部
１０１ａ （支持部の）上面
１０２ ベース部
１０３ ブレークプレート
１０３ａ （ブレークプレートの）基部
１０３ｂ （ブレークプレートの）刃部
１０３ｅ （ブレークプレートの）刃先
１１０ ステージ
Ｃ１ （ブレークプレートの）断面中心
Ｃ２ （ダイシング溝の）断面中心
ＤＧ ダイシング溝
Ｅ （ダイシング溝の）エッジ
ＳＢ（ＳＢ１、ＳＢ２） 半田ボール
ＳＬ スクライブライン 1 Glass substrate 2 Silicon substrate 3 Substrate fixing tape 4 Protective film 10 (with solder ball) Laminated substrate 100 Break device 101 Support 101a (support) Top surface 102 Base 103 Break plate 103a (break plate) base 103b ( Cutting edge (of break plate) 103e (cutting edge of break plate) 110 Stage C1 (center of break plate) C2 Center of cross section (of dicing groove) DG Dicing groove E (of dicing groove) Edge SB (SB1, SB2) Solder ball SL Scrib line

Claims (3)

一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークするブレーク装置であって、
前記半田ボール付き基板が前記一方主面側を上側として水平姿勢にて載置されるステージと、
一方端部に備わる刃先が下端部となる垂直姿勢にて昇降自在に設けられた薄板状のブレークプレートと、
を備え、
前記刃先を前記溝部に当接させた状態から、前記ブレークプレートを前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことで、前記半田ボール付き基板を前記溝部の形成箇所においてブレークするようになっており、
前記ブレークプレートにおいては、前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、
前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さい、
ことを特徴とするブレーク装置。 On the other hand, it is a break device that breaks a substrate with solder balls provided with a plurality of solder balls on the main surface along a groove provided on the one main surface.
A stage on which the board with solder balls is placed in a horizontal position with the main surface side facing up.
On the other hand, a thin plate-shaped break plate that can be raised and lowered in a vertical position with the cutting edge at the end being the lower end, and
Equipped with
From the state where the cutting edge is in contact with the groove portion, the break plate is pushed toward the solder ball-attached substrate by a predetermined pushing amount so that the solder ball-attached substrate breaks at the groove forming portion. It has become
In the break plate, the blade portion including the cutting edge extends from one end of the base having a predetermined thickness and is provided narrower than the base.
The thickness of the blade portion is less than twice the minimum value of the distance between the cross-sectional center of the groove portion and the solder ball when the break plate is pushed in.
A break device characterized by that. 一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークする方法であって、
前記半田ボール付き基板を前記一方主面側を上側として水平姿勢とする工程と、
一方端部に刃先を備える薄板状のブレークプレートを前記刃先が下端部となる垂直姿勢とし、前記刃先を前記溝部に当接させたうえで、前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことによって、前記半田ボール付き基板を前記溝部の形成箇所においてブレークする工程と、
を備え、
前記ブレークプレートとして、前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さいものを用いる、
ことを特徴とするブレーク方法。 On the other hand, it is a method of breaking a substrate with solder balls provided with a plurality of solder balls on the main surface along a groove provided on the one main surface.
A process in which the substrate with solder balls is placed in a horizontal posture with the main surface side as the upper side.
On the other hand, a thin plate-shaped break plate having a cutting edge at one end is placed in a vertical position in which the cutting edge is at the lower end, the cutting edge is brought into contact with the groove, and then the predetermined amount of pushing is achieved toward the substrate with solder balls. And the step of breaking the substrate with solder balls at the formed portion of the groove portion by pushing it in.
Equipped with
As the break plate, the blade portion including the cutting edge extends from one end of the base portion having a predetermined thickness and is provided narrower than the base portion, and the thickness of the blade portion is the break. Use a plate that is smaller than twice the minimum value of the distance between the center of the cross section of the groove and the solder ball when the plate is pushed in.
A break method characterized by that. 一方主面に複数の半田ボールが設けられた半田ボール付き基板を前記一方主面に設けられた溝部に沿ってブレークする際に用いるブレークプレートであって、
一方端部に刃先を備える薄板状をなしており、
前記刃先が下端部となる垂直姿勢において、前記刃先を、前記一方主面側を上側として水平姿勢とした前記半田ボール付き基板の前記溝部に当接させたうえで、前記ブレークプレートを前記半田ボール付き基板に向けて所定の押し込み量にて押し込むことによって、前記半田ボール付き基板を前記溝部の形成箇所においてブレークすることが可能とされており、
前記刃先を含む刃部が、所定の厚みを有する基部の一方端部から延在してなるとともに前記基部より幅狭に設けられてなり、
前記刃部の厚みが、前記ブレークプレートが押し込まれたときの前記溝部の断面中心と前記半田ボールとの距離の最小値の２倍よりも小さい、
ことを特徴とするブレークプレート。 On the other hand, it is a break plate used when a substrate with solder balls provided with a plurality of solder balls on one main surface is broken along a groove provided on the one main surface.
On the other hand, it has a thin plate shape with a cutting edge at the end.
In a vertical posture in which the cutting edge is the lower end portion, the cutting edge is brought into contact with the groove portion of the substrate with a solder ball in a horizontal posture with the one main surface side facing up, and then the break plate is placed on the solder ball. By pushing the soldered board with a predetermined pushing amount toward the attached substrate, it is possible to break the soldered substrate at the formed portion of the groove portion.
The blade portion including the cutting edge extends from one end of the base portion having a predetermined thickness and is provided narrower than the base portion.
The thickness of the blade portion is less than twice the minimum value of the distance between the cross-sectional center of the groove portion and the solder ball when the break plate is pushed in.
A break plate characterized by that.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006213234A (en) 2005-02-04 2006-08-17 Toyoda Gosei Co Ltd Airbag
JP2006273711A (en) 2001-04-02 2006-10-12 Mitsuboshi Diamond Industrial Co Ltd Method of dividing laminated substrate
JP2015041781A (en) 2014-10-23 2015-03-02 三星ダイヤモンド工業株式会社 Cutting method and cutting device of wafer laminate for image sensor
JP2015083337A (en) 2013-10-25 2015-04-30 三星ダイヤモンド工業株式会社 Breaking device
JP2017005067A (en) 2015-06-09 2017-01-05 三星ダイヤモンド工業株式会社 Manufacturing apparatus and manufacturing method for semiconductor chip with solder ball

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA825350A (en) * 1969-10-14 E. Collier Godfrey Manufacture of semiconductor elements
JPH0639392U (en) * 1992-11-02 1994-05-24 株式会社カイジョー Ultrasonic cutting device
JP2604003Y2 (en) * 1993-03-26 2000-04-10 日立工機株式会社 Cutting tool
JP2004122315A (en) * 2002-10-03 2004-04-22 Read Co Ltd Blade with side cutter and cutting method using it
TW200500185A (en) * 2003-02-21 2005-01-01 Mitsuboshi Diamond Ind Co Ltd Substrate-processing table and device
JP2011056647A (en) * 2009-09-14 2011-03-24 Shin Etsu Handotai Co Ltd Dressing method of inner peripheral blade
US9263406B2 (en) * 2009-11-10 2016-02-16 Rohm Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US8409925B2 (en) * 2011-06-09 2013-04-02 Hung-Jen LEE Chip package structure and manufacturing method thereof
JP6061612B2 (en) * 2012-10-25 2017-01-18 三星ダイヤモンド工業株式会社 Substrate groove processing tool and substrate groove processing apparatus
JP2016112714A (en) * 2014-12-11 2016-06-23 三星ダイヤモンド工業株式会社 Dividing method and dividing device of substrate
JP6339514B2 (en) * 2015-03-25 2018-06-06 Ｔｏｗａ株式会社 Cutting apparatus and cutting method
JP6805511B2 (en) * 2016-03-14 2020-12-23 凸版印刷株式会社 Wiring board and its manufacturing method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006273711A (en) 2001-04-02 2006-10-12 Mitsuboshi Diamond Industrial Co Ltd Method of dividing laminated substrate
JP2006213234A (en) 2005-02-04 2006-08-17 Toyoda Gosei Co Ltd Airbag
JP2015083337A (en) 2013-10-25 2015-04-30 三星ダイヤモンド工業株式会社 Breaking device
JP2015041781A (en) 2014-10-23 2015-03-02 三星ダイヤモンド工業株式会社 Cutting method and cutting device of wafer laminate for image sensor
JP2017005067A (en) 2015-06-09 2017-01-05 三星ダイヤモンド工業株式会社 Manufacturing apparatus and manufacturing method for semiconductor chip with solder ball

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