JP2017005067A - Manufacturing apparatus and manufacturing method for semiconductor chip with solder ball - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for making it possible to appropriately form a semiconductor chip with a solder ball.SOLUTION: The manufacturing method comprises the steps of: preparing a bonded substrate in which a silicon substrate and a glass substrate are bonded by an adhesive layer and a plurality of dividing positions are determined so that unit areas as separate chips are formed by division; forming scribe lines in the dividing positions on one principal surface of the glass substrate forming one principal surface of the bonded substrate; forming groove parts from the principal surface of the silicon substrate to a certain point in the adhesive layer in each dividing position on one principal surface of the silicon substrate forming the other principal surface of the bonded substrate; forming a solder ball for each unit area on the upper surface of the one principal surface side of the silicon substrate of the bonded substrate with the scribe lines and groove parts formed; and braking, between the scribe lines and groove parts, the bonded substrate with the solder balls formed thereon.SELECTED DRAWING: Figure 8

Description

  The present invention relates to a semiconductor chip manufacturing apparatus and manufacturing method, and more particularly, to a semiconductor chip manufacturing apparatus and manufacturing method having a configuration in which a silicon substrate layer and a glass substrate layer are bonded together with an adhesive layer and having solder balls. .

  A silicon substrate is widely used as a substrate for a semiconductor element (semiconductor chip), and is formed by bonding (bonding) a silicon substrate and a glass substrate together with an adhesive layer (adhesive) for the purpose of compounding the substrate and other purposes. A laminated substrate may be used. Further, in a semiconductor element manufacturing process using a silicon substrate, a technique is usually employed in which a silicon substrate, which is a mother substrate formed by two-dimensionally forming a large number of element patterns, is divided to obtain individual chips. However, the same procedure is also adopted when the above-described bonded substrate of the silicon substrate and the glass substrate is used as the mother substrate. In such a case, the glass substrate, the silicon substrate, and the adhesive layer respectively constitute the glass substrate layer, the silicon substrate layer, and the adhesive layer in the semiconductor chip obtained by dividing the bonded substrate.

  In addition, a technique of dividing a brittle material substrate with resin formed by attaching a thermosetting resin to the main surface of the brittle material substrate is already known (for example, see Patent Document 1).

Japanese Patent No. 5170195

  When a silicon substrate which is a mother substrate formed by two-dimensionally forming a large number of element patterns is divided to obtain individual chips, dicing by a dicer may be employed as a dividing method. A similar technique can be employed when using the above-described bonded substrate of the silicon substrate and the glass substrate as the mother substrate.

  However, due to the nature of the glass substrate, it is difficult to increase the processing speed, and there is a problem in that the productivity is poor because chipping is likely to occur on the glass substrate. Further, it is necessary to use a special dicing blade such as a resin blade, but there is also a problem that the wear is quick and the cost is high. Furthermore, there is a problem that water used for cooling or the like during dicing tends to enter between the adhesive layer and the glass.

  In addition, as a kind of semiconductor chip having a configuration in which a silicon substrate layer and a glass substrate layer are bonded together with an adhesive layer, the silicon substrate layer is formed on the silicon substrate layer (more specifically, on the upper layer formed on the silicon substrate). Some have solder balls. Since it is not always easy and inefficient to form solder balls on individual semiconductor chips of small size, such solder balls are conventionally formed prior to the step of dividing the mother board. It was. However, in such a case, there is a problem that the solder balls may be corroded by water used for removing the cutting pieces during dicing.

  The present invention has been made in view of the above problems, and provides a method for suitably producing a semiconductor chip having a configuration in which a silicon substrate layer and a glass substrate layer are bonded together with an adhesive layer and having solder balls. The purpose is to do.

  In order to solve the above-mentioned problem, the invention of claim 1 is characterized in that the glass forming one main surface of a bonded substrate in which a silicon substrate and a glass substrate are bonded together by an adhesive layer and a plurality of scheduled division positions are defined. A scribe line forming device for forming a scribe line by a predetermined scribe means at the predetermined division position on one main surface of the substrate, and the predetermined division position on one main surface of the silicon substrate forming the other main surface of the bonded substrate The dicing groove forming apparatus for forming a groove portion by a predetermined groove portion forming means from the one main surface of the silicon substrate to the middle of the adhesive layer, and the bonding in which the scribe line and the groove portion are formed Forming a solder ball for each unit region on the upper surface of the silicon substrate on the one principal surface side of the substrate; And a breaking device for obtaining a plurality of semiconductor chips with solder balls by breaking the bonded substrate on which the solder balls are formed between the scribe line and the groove. Features.

  The invention of claim 2 is a method of manufacturing a semiconductor chip with solder balls, wherein a silicon substrate and a glass substrate are bonded together with an adhesive layer, and each is divided into separate semiconductor chips and Preparing a bonded substrate in which a plurality of scheduled division positions are determined so that a unit region is formed, a bonded substrate preparing step, and one main surface of the glass substrate forming one main surface of the bonded substrate The silicon substrate at the predetermined dividing position on one main surface of the silicon substrate forming the other main surface of the bonded substrate, and a scribe line forming step of forming a scribe line at a predetermined dividing position in Daishin which forms a groove part by predetermined groove part formation means from the one main surface of the above to the middle of the adhesive layer Forming a solder ball for each unit region on the upper surface of the one main surface side of the silicon substrate in the bonded substrate in which the scribe line and the groove portion are formed; And a breaking step of obtaining a plurality of semiconductor chips with solder balls by breaking the bonded substrate on which the solder balls are formed between the scribe line and the groove portion. .

  The invention of claim 3 is a method for producing a semiconductor chip with solder balls according to claim 2, wherein, in the breaking step, the bonded substrate is formed such that the silicon substrate side is the uppermost portion, and the glass substrate By placing the break blade in contact with the planned dividing position from above the silicon substrate and placing it further down on the upper surface of the support portion made of an elastic body so that the side is the bottom, the bonding is performed. The substrate is divided.

  Invention of Claim 4 is a manufacturing method of the semiconductor chip with a solder ball of Claim 3, Comprising: In the said breaking process, after making the said break blade contact | abut to the bottom part of the said groove part, it pushes down further The bonded substrate is divided by extending a vertical crack from the scribe line while cutting the adhesive layer by the break blade.

  A fifth aspect of the present invention is a method for dividing a bonded substrate board according to the third aspect, wherein the semiconductor chip is provided with solder balls. In the breaking step, the side surface of the edge of the break blade is placed on the silicon chip. By further pressing down after contacting the opening end of the groove on the one principal surface of the substrate, the bonded substrate is split by tearing the adhesive layer and extending a vertical crack from the scribe line, It is characterized by that.

  Invention of Claim 6 is a manufacturing method of the semiconductor chip with a solder ball in any one of Claim 2 thru | or 5, Comprising: The said predetermined scribe means is a scribing wheel, In the said scribe line formation process, The scribing line is formed by pressing and rolling the scribing wheel along the planned division position.

  The invention of claim 7 is the method for producing a semiconductor chip with solder balls according to any one of claims 2 to 5, wherein the predetermined scribe means is a laser beam, and in the scribe line forming step, Irradiating the laser beam to the planned division position on one main surface of the glass substrate forming one main surface of the bonded substrate, thereby causing alteration or evaporation along the planned division position on the glass substrate. Thus, the scribe line is formed.

  The invention of claim 8 is the method of manufacturing a semiconductor chip with solder balls according to any one of claims 2 to 7, wherein the predetermined groove forming means is a dicer.

  According to the first to eighth aspects of the present invention, the glass substrate layer and the silicon substrate layer are bonded to each other by the adhesive layer, and the solder ball is provided on the upper surface on the one main surface side of the silicon substrate layer. A semiconductor chip having such a structure can be suitably manufactured.

It is sectional drawing which shows roughly the structure of 10A of semiconductor chips. 2 is a cross-sectional view schematically showing a configuration of a bonded substrate board 10. FIG. It is a figure explaining the procedure which divides the bonded substrate board 10 in the division | segmentation scheduled position A. FIG. It is a figure for demonstrating formation of the scribe line SL, and the principal part of an apparatus. It is a figure for demonstrating formation of the dicing groove | channel DG and the principal part of an apparatus. It is a figure for demonstrating formation of the dicing groove | channel DG and the principal part of an apparatus. It is a figure which illustrates bonding substrate 10 after solder ball SB was formed. It is a figure which shows schematically a mode that the bonding board | substrate 10 is broken using the break apparatus 300. FIG. It is a figure for showing the 1st break technique and the principal part of an apparatus. It is a figure for showing the 2nd break technique and the principal part of an apparatus. It is a figure for demonstrating formation of the scribe line SL in 2nd Embodiment, and the principal part of an apparatus.

<First Embodiment>
<Semiconductor chip and bonded substrate>
FIG. 1 is a cross-sectional view schematically showing a configuration of a semiconductor chip 10A to be manufactured in the present embodiment. The semiconductor chip 10A generally has a configuration in which a glass substrate layer 1A and a silicon substrate layer 2A are bonded by an adhesive layer 3A, and an upper layer on the surface of the silicon substrate layer 2A opposite to the adhesive surface with the adhesive layer 3A 4A, and further, solder balls SB are provided on the upper layer 4A. In the present embodiment, the semiconductor chip 10 </ b> A is manufactured by dividing the bonded substrate 10. Hereinafter, this point will be described sequentially.

  FIG. 2 is a cross-sectional view schematically showing the configuration of the bonded substrate 10 to be divided in the present embodiment. In the present embodiment, the bonded substrate 10 is a substrate in which the glass substrate 1 and the silicon substrate 2 are bonded together by the adhesive layer 3 to form a single substrate as a whole. Glass substrate 1, silicon substrate 2, and adhesive layer 3 constitute glass substrate layer 1 </ b> A, silicon substrate layer 2 </ b> A, and adhesive layer 3 </ b> A in semiconductor chip 10 </ b> A obtained by dividing bonded substrate 10, respectively.

  The bonded substrate 10 is divided by being divided along the thickness direction by a method to be described later at a planned division position A that is predetermined as a position to be divided. The division | segmentation scheduled position A is prescribed | regulated linearly (for example, linear form) along the main surface of the bonding board | substrate 10. FIG. In FIG. 2, the case where the division | segmentation scheduled position A is defined in the direction perpendicular | vertical to drawing is illustrated. In FIG. 2, the division planned position A is shown on both the main surface 1 a of the glass substrate 1 and the main surface 2 a of the silicon substrate 2, which are both main surfaces of the bonded substrate 10. When the ten main surfaces are viewed in a plan view (planar see-through view), the scheduled division positions A on the respective main surfaces are the same. In other words, when the planned division position A on the one main surface is translated in the thickness direction of the bonded substrate 10, it coincides with the planned division position A on the other main surface.

  Although not shown in FIG. 2, normally, a plurality of scheduled division positions A are determined in a lattice pattern for one bonded substrate 10, and division is performed at all the planned division positions A. Many semiconductor chips 10A are obtained. The interval between the individual division positions A may be determined as appropriate according to the size of the semiconductor chip 10A to be manufactured within a range in which division can be suitably performed according to the procedure described later.

  Further, FIG. 2 also shows a division advancement scheduled position B, which is a position where the division is actually going to proceed during division. The planned division progress position B is an idea as a plane along the thickness direction between the planned division positions A on the main surface 1a of the glass substrate 1 and the main surface 2a of the silicon substrate 2 as both main surfaces of the bonded substrate 10. Is done. In the case illustrated in FIG. 2, the scheduled division progress position B extends in a direction perpendicular to the drawing.

  Examples of the material of the glass substrate 1 include various glasses such as borosilicate glass, alkali-free glass, and soda glass. Examples of the material of the adhesive layer 3 include a thermosetting epoxy resin.

  The thickness of the glass substrate 1, the silicon substrate 2, and the adhesive layer 3, and the total thickness of the bonded substrate 10 are not particularly limited as long as the bonded substrate 10 can be divided suitably by the method described later. Although not, the ranges of 100 μm to 1000 μm, 50 μm to 1000 μm, 10 μm to 200 μm, and 150 μm to 1500 μm are exemplified. Further, the planar size of the bonded substrate 10 is not particularly limited, but those having a diameter of about 6 inches to 10 inches are exemplified. The planar size of the semiconductor chip 10A obtained by the division is not particularly limited, and a range of about 1 to 3 mm in length and about 1 to 3 mm in width is exemplified.

  In FIG. 2, the upper layer 4 is provided on the main surface 2 a on the upper surface side in the drawing, which is the one main surface of the silicon substrate 2 and the main surface opposite to the surface adjacent to the adhesive layer 3. The case where it becomes is illustrated. The upper layer 4 constitutes the upper layer 4A in the semiconductor chip 10A obtained by dividing the bonded substrate 10. FIG. 2A illustrates the form of formation of the upper layer 4 when the region near the planned division position A of the main surface 2a of the silicon substrate 2 is the non-forming region RE. ) Exemplifies the formation of the upper layer 4 over the entire main surface 2a. The configuration of the semiconductor chip 10A illustrated in FIG. 1 conforms to the former.

  In FIG. 2, for the sake of simplicity, the upper layer 4 is shown as if it is a single layer, but the upper layer 4 may be a single layer or of the same or different material. It may be composed of a plurality of layers. Examples of the constituent material of the upper layer 4 include various materials such as various metal layers, ceramic layers, semiconductor layers, amorphous layers, and resin layers.

  However, in the following description, the upper layer 4 is omitted, and the silicon substrate 2 and the upper layer 4 are sometimes simply referred to as the silicon substrate 2, and strictly speaking, the upper surface of the upper layer 4 is formed. The surface may be referred to as a main surface 2 a of the silicon substrate 2.

<Division procedure>
Next, a procedure for dividing the bonded substrate 10 having the above-described configuration at the division planned position A will be described. FIG. 3 is a diagram showing a procedure for such division.

  First, the bonded substrate 10 illustrated in FIG. 2 is prepared (step S1). That is, the planned dividing position A is formed such that the glass substrate 1 and the silicon substrate 2 are bonded together by the adhesive layer 3 and the unit regions are formed by dividing the glass substrate 1 and the silicon substrate 2. A predetermined bonded substrate 10 is prepared.

  And the scribe line SL (FIG. 4) is formed in the division | segmentation plan position A by the side of the glass substrate 1 of the prepared bonded substrate 10 (step S2). FIG. 4 is a diagram for explaining the formation of the scribe line SL. FIG. 4 illustrates a case where a plurality of scheduled division positions A each extend linearly in a direction perpendicular to the drawing (the same applies to FIGS. 5 to 8 and 11).

  The scribe line SL is a part that becomes a starting point of crack (vertical crack) extension in a process described later. As shown in FIG. 4A, the scribe line SL is formed by holding the bonded substrate 10 in a horizontal posture in which the glass substrate 1 is at the top and the silicon substrate 2 is at the bottom. At this time, the bonded substrate 10 may be directly held on the stage, or instead, the main surface 2a side of the silicon substrate 2 is dicingly held by an annular holding member such as a dicing ring. A mode in which the substrate 10 is bonded to a holding tape such as a tape and the bonded substrate 10 is held on the stage together with the holding member and the holding tape.

  Schematically speaking, the scribe line SL is formed by holding the bonded substrate 10 on the stage of a known scribe device (not shown) having a predetermined scribe tool in a state where the scribe tool is held on the glass substrate 1. This is performed by moving the main surface 1a relative to the planned division position A.

  FIG. 4B shows a state in which a scribe line SL is formed using a known scribing wheel 101 as a scribe tool. The scribing wheel 101 has a disk shape (an abacus bead shape) having a shape in which two truncated cones are connected to the lower bottom surface (larger bottom surface) side, and an outer peripheral portion thereof is a cutting edge. It is a tool that has become. The scribe line SL is formed by causing the scribing wheel 101 (more specifically, the cutting edge) to be pressed and rolled along the planned division position A on the main surface 1 a of the glass substrate 1. Note that the cutting edge may be uniform over the entire circumference of the scribing wheel 101, or may have an aspect having periodic recesses.

  As shown by arrows AR1 and AR2 in FIG. 4 (b), the scribing wheel 101 is sequentially pressed and rolled with respect to each division planned position A to form a scribe line SL. As shown in FIG. 4C, scribe lines SL are formed at all the planned division positions A. In addition, with the formation of the scribe line SL, a mode in which a vertical crack extends from the scribe line SL in the thickness direction of the glass substrate 1 may be employed.

  Moreover, the aspect using a well-known diamond point etc. may be sufficient as a scribe tool.

  When the scribe line SL is formed at the planned division position on the glass substrate 1 side, dicing is subsequently performed at the planned division position A on the silicon substrate 2 side of the bonded substrate 10 to form a dicing groove DG (FIG. 5). (Step S3). 5 and 6 are diagrams for explaining the formation of the dicing groove DG. The dicing groove DG is formed as a groove portion and serves as a starting point of a break in a process described later.

  As shown in FIG. 5A, the dicing groove DG is formed by holding the bonded substrate 10 in a horizontal posture in which the silicon substrate 2 is the uppermost portion and the glass substrate 1 is the lowermost portion. That is, it is performed by holding the bonded substrate 10 in an inverted posture from that at the time of forming the scribe line SL. At that time, the bonded substrate 10 may be directly held on the stage, or instead, the main surface 1a side of the glass substrate 1 is held by an annular holding member such as a dicing ring. A mode in which the substrate 10 is bonded to a holding tape such as a tape and the bonded substrate 10 is held on the stage together with the holding member and the holding tape.

  As shown in FIG. 5B, the dicing groove DG is formed as a groove portion that penetrates the silicon substrate 2 and reaches the adhesive layer 3. In other words, the dicing groove DG is formed such that the depth h is larger than the thickness of the silicon substrate 2 and smaller than the total thickness of the silicon substrate 2 and the adhesive layer 3. Although details will be described later, the size (depth h, width w) of the dicing groove DG and the distance d between the bottom DG1 of the dicing groove DG and the adhesive layer 3 are selected according to the material of the adhesive layer 3. It is determined according to a break method in a break process described later.

  Schematically speaking, the dicing groove DG is formed in a state where the bonded substrate 10 is held in this posture on a stage of a known dicing apparatus (dicer) (not shown) provided with predetermined dicing means. This is done by cutting a predetermined range in the thickness direction and the width direction by the dicing means at the planned division position A on the surface 2a side.

  FIG. 5B and FIG. 5C show how the dicing groove DG is formed using a dicer provided with a known dicing blade 201 as a dicing means. The dicing blade 201 is a tool having a disc shape (annular shape) and an outer peripheral portion thereof as a cutting edge. When the dicing groove DG is formed by using the dicing blade 201, first, the cutting edge portion is formed while the dicing blade 201 is rotated in the vertical plane in a posture in which the main surface is parallel to the vertical surface. Until the target depth position corresponding to the depth h of the dicing groove DG to be reached is reached, as shown by the arrow AR3 in FIG. 5B, and further as shown by the arrow AR4 in FIG. 5C Let When the cutting edge portion reaches the target depth position, the dicing blade 201 moves relative to the bonded substrate 10 along the scheduled division position A (that is, along the planned division progress position B) while maintaining the rotation state. By doing so, a dicing groove DG is formed.

  As indicated by arrows AR5 and AR6 in FIG. 5 (b) or as indicated by arrows AR7 and AR8 in FIG. 5 (c), the dicing blade 201 is sequentially moved with respect to the respective division planned positions A. When the dicing grooves DG are formed, finally, the dicing grooves DG are formed at all the division planned positions A as shown in FIG.

  When the dicing groove DG is formed, the bonded substrate 10 is in a state in which the scribe line SL is formed on one main surface side and the dicing groove DG is formed on the other main surface side at all the division positions A. However, it has been realized.

  Note that the order of forming the scribe line SL and forming the dicing groove DG may be reversed.

  Subsequently, solder balls SB are formed on the main surface 2a of the silicon substrate 2 and more strictly on the upper layer 4 not shown in FIGS. 4 to 6 (step S4). FIG. 7 is a diagram illustrating the bonded substrate 10 after the solder balls SB are formed. The solder balls SB are formed on the main surface 2a of the silicon substrate 2 (more specifically, on the main surface of the upper layer 4), and are finally divided into unit regions that become separate semiconductor chips 10A. Formed. The formation of the solder ball SB is realized by, for example, a mounting process using a known solder ball mounting apparatus and a reflow process using a known reflow furnace subsequently performed.

  It should be noted that the solder ball SB is formed before the scribe line SL is formed, that is, when the bonded substrate is first prepared, or after the scribe line SL is formed and before the dicing groove DG is formed. Even if the form to be formed is adopted, the semiconductor chip 10A can be manufactured. However, in the former case, when the scribe line SL is formed, it is necessary to hold the bonded substrate 10 with the main surface 2a side of the uneven silicon substrate 2 on which the solder balls SB are formed facing downward, in the latter case However, there are cases where the solder balls SB may be corroded by water used for removing the cutting pieces or cleaning the dicing grooves DG during dicing. However, in the embodiment in which the solder ball SB is formed at the timing after the dicing groove DG is formed as in the present embodiment, such considerations are irrelevant, and therefore the process becomes simple and the productivity is high. This is preferable.

  After the solder ball SB is formed, a break using the break device 300 is performed, and the cutting along the scheduled cutting progress position B is advanced between the scribe line SL and the dicing groove DG (step S5).

  FIG. 8 is a diagram schematically showing a state in which the bonded substrate 10 is broken using the breaking device 300.

  The break device 300 is made of an elastic body, and has a support portion 301 on which the bonded substrate 10 is placed on an upper surface 301a, and a cutting edge having a triangular shape in cross section extending in a predetermined blade spanning direction. A break blade 302 that can be raised and lowered is mainly provided.

  The support portion 301 is preferably formed of an elastic body having a hardness of 65 ° to 95 °, preferably 70 ° to 90 °, for example, 80 °. As the support portion 301, for example, silicone rubber or the like can be suitably used. The lower portion of the support portion 301 may be supported by a hard (not elastic) support body (not shown).

  As shown in FIG. 8, at the time of the break, the bonded substrate 10 becomes the uppermost portion on the side of the silicon substrate 2 where the dicing grooves DG are formed, and becomes the lowermost portion on the side of the glass substrate 1 where the scribe lines SL are formed. As described above, it is placed on the upper surface 301 a of the support portion 301. In FIG. 8, the bonded substrate 10 is placed on the upper surface 301 a of the support portion 301 so that the planned division position A (and hence the scribe line SL and the dicing groove DG) extend in a direction perpendicular to the drawing. The break blade 302 (more specifically, the cutting edge) is arranged along the extending direction of the planned division position A, and is arranged vertically above the planned division position A. .

  Breaking using such a breaking device 300 roughly means that the breaking blade 302 is placed at a planned dividing position A on the silicon substrate 2 side in the vertical direction (that is, the formation position of the dicing groove DG) as indicated by an arrow AR9. This is realized by lowering the break blade 302 and pushing down the break blade 302 even after the break blade 302 contacts the bonded substrate 10. Then, as indicated by an arrow AR10, the bonded substrate 10 is divided into a desired size and number of semiconductor chips 10A by sequentially breaking all the planned division positions A.

  More specifically, in the present embodiment, two types of break methods having different principles are used properly according to the material of the adhesive layer 3. In such a case, the shape of the cutting edge 302a (see FIGS. 9 and 10) of the break blade 302 and the size of the dicing groove DG are different depending on the selected break method. Hereinafter, the two break methods will be described sequentially.

(First break method and apparatus)
FIG. 9 is a diagram for illustrating a main part of the first break method and apparatus. In the first breaking method, as shown by the arrow AR9 in FIG. 8, the contact of the breaking blade 302 with the dicing groove DG, which is caused by lowering the breaking blade 302 in the vertical direction, is first illustrated. 9 (a), the cutting is advanced between the tip of the blade edge 302a and the bottom DG1 of the dicing groove DG, and then the cutting is advanced.

  Specifically, as shown by an arrow AR11 in FIG. 9B, when the break blade 302 is pushed downward with a predetermined force even after the tip of the blade edge 302a comes into contact with the bottom DG1 of the dicing groove DG, the arrow As indicated by AR <b> 12, the cutting edge 302 a descends while tearing the adhesive layer 3 along the scheduled cutting progress position B while receiving resistance from the adhesive layer 3. Thereby, the division | segmentation in the contact bonding layer 3 advances.

  At this time, the force that pushes down the break blade 302 vertically also acts as a force that pushes the bonded substrate 10 along the planned division position A into the support portion 301 that is an elastic body, so that the bonded substrate 10 is supported. From the portion 301, an upward repulsive force as indicated by an arrow AR13 is received symmetrically with respect to the scribe line SL. Then, as a result of applying such a repulsive force and a vertically downward force acting from the break blade 302, a so-called three-point bending situation is realized on the glass substrate 1 side of the bonded substrate 10, which is indicated by an arrow AR14. As described above, the vertical crack CR extends vertically upward from the scribe line SL along the planned division progress position B.

  The breakage (cutting) of the adhesive layer 3 from above in the vertical direction by the break blade 302 and the extension of the vertical crack CR in the glass substrate 1 from below in the vertical direction all proceed along the breakage advancement position B. When both finally reach the interface between the adhesive layer 3 and the glass substrate 1, the division is completed. FIG. 9C illustrates a case in which two semiconductor chips 10A on the left and right in the drawing are obtained as a result of the division, corresponding to FIG. 9B. In practice, by repeating such division at all the division planned positions A, the bonded substrate board 10 is divided into a large number of semiconductor chips 10A.

  When performing the break by the first breaking method as described above, the cutting edge 302a is kept in the dicing groove until the cutting edge 302 abuts at least the bottom portion DG1 of the dicing groove DG when the breaking blade 302 is lowered. In order not to come into contact with DG, it is necessary to determine the size of the dicing groove DG and to determine the blade edge angle θ which is the angle formed by the blade edge 302a in the cross section perpendicular to the blade crossing direction. Usually, the size of the dicing groove DG is relatively large and the cutting edge angle θ is relatively small as compared with a second breaking method described later.

(Second break method and apparatus)
FIG. 10 is a diagram for showing a main part of the second break technique and apparatus. In the second breaking method, the contact of the breaking blade 302 with the dicing groove DG, which is eventually caused by lowering the breaking blade 302 in the vertical direction as indicated by the arrow AR9 in FIG. As shown in FIG. 10 (a), the separation is advanced after being made between each of the two side surfaces 302b of the blade edge 302a and the corresponding opening end DG2 of the dicing groove DG. Here, the opening end portion DG2 of the dicing groove DG is an edge portion of the dicing groove DG on the surface of the silicon substrate 2.

  Specifically, as shown by an arrow AR21 in FIG. 10B, even after the side surface 302b of the cutting edge 302a abuts against the opening end DG2 of the dicing groove DG, the break blade 302 is pushed down vertically with a predetermined force. As shown, each of the two side surfaces 302b of the blade edge 302a has an opening portion DG2 corresponding to the dicing groove DG that is in contact in the oblique direction with respect to the planned division position A, as indicated by an arrow AR22. Apply forces that are symmetrical and away from each other.

  When the opening end portion DG2 receives a force in such a manner, as indicated by an arrow AR23, the portion of the adhesive layer 3 where the dicing groove DG is not formed is symmetric with respect to the planned division progress position B. Directional force is generated. As the break blade 302 is pushed down, the force increases. Eventually, the adhesive layer 3 is torn from the bottom DG1 of the dicing groove DG toward the vertically downward direction indicated by the arrow AR24. As a result, a crack CR1 is formed in the adhesive layer 3 along the planned division progress position B. The crack CR1 finally reaches the interface between the adhesive layer 3 and the glass substrate 1.

  Even after the formation of the crack CR1, when the break blade 302 is pushed down vertically, the force applied to the bonded substrate 10 by the break blade 302 is scheduled to be divided with respect to the support portion 301 that is an elastic body. It acts as a force for pushing along the position A. Therefore, as in the case of the first break method, the bonded substrate 10 receives a vertically upward repulsive force from the support portion 301 as indicated by an arrow AR25. Therefore, on the glass substrate 1 side of the bonded substrate 10, a three-point bending situation is realized, and as indicated by an arrow AR26, the vertical crack CR2 extends vertically upward from the scribe line SL along the planned division progress position B. Extend to the back. Finally, when the vertical crack CR2 reaches the interface between the adhesive layer 3 and the glass substrate 1, the division is completed. FIG. 10C illustrates a case in which two semiconductor chips 10A on the left and right in the drawing are obtained as a result of the division, corresponding to FIG. 10B. In practice, by repeating such division at all the division planned positions A, the bonded substrate board 10 is divided into a large number of semiconductor chips 10A.

  When performing the break by the second break method as described above, the side surface of the blade edge 302a is moved before the tip of the blade edge 302a and the bottom portion DG1 of the dicing groove DG abut when the break blade 302 is lowered. It is necessary to determine the size of the dicing groove DG and the blade edge angle θ so that 302b and the opening end DG2 of the dicing groove DG are in contact with each other. Usually, the size of the dicing groove DG is relatively small and the blade edge angle θ is relatively large as compared with the first breaking method described above. In addition, it is necessary to determine the distance d between the bottom portion DG1 of the dicing groove DG and the adhesive layer 3 in consideration of the balance with the pushing amount of the break blade 302. This is because if the distance d is too large, the crack CR1 may not reach the interface between the adhesive layer 3 and the glass substrate 1.

  Note that it is preferable to select the first break method and the second break method in consideration of the material (composition, viscosity, elasticity, etc.) of the adhesive layer 3. For example, when the viscosity of the adhesive layer 3 is high, the tearing by the break blade 302 tends to be less likely to proceed appropriately. Therefore, it is preferable to apply the second break method to the first break method. It is highly possible that

  Alternatively, at the beginning of the break, the cutting is advanced by a method corresponding to the first break method, and then the break is made while realizing the state in which the side surface 302b of the blade edge 302a is brought into contact with the opening end portion DG2 of the dicing groove DG. You may make it progress.

  As described above, according to the present embodiment, the glass substrate layer and the silicon substrate layer have a configuration in which the adhesive layer is adhered to the glass substrate layer, and the opposite surface of the silicon substrate layer to the adhesive surface with the adhesive layer. In order to obtain a semiconductor chip having a structure in which a solder ball is provided on the upper layer, the silicon substrate and the glass substrate are bonded together with an adhesive layer. A scribe line is formed at the planned division position on the glass substrate side of the bonded substrate, and a dicing groove reaching the adhesive layer is formed at the planned division position on the silicon substrate side of the bonded substrate, and then the solder ball is made into silicon. It is formed at a predetermined position on the upper layer provided on the substrate. Then, after the solder balls are formed, the breaking is advanced between the scribe line and the dicing groove by the break.

  When a semiconductor chip with solder balls is manufactured by such a procedure, since the glass substrate is not diced, the occurrence of chipping in the glass substrate is suppressed, and the productivity is improved and the cost is reduced. Furthermore, water does not enter between the adhesive layer and the glass substrate, and the solder balls are not corroded by water. That is, according to the present embodiment, a semiconductor chip with solder balls having excellent quality can be obtained more efficiently and at a lower cost than in the past.

<Second Embodiment>
In the first embodiment described above, the scribe line SL is formed using a scribe tool such as the scribing wheel 101. However, the form of the scribe line SL is not limited to this. . FIG. 11 is a diagram for explaining a method of forming the scribe line SL performed in the present embodiment.

  As shown in FIG. 11A, also in the present embodiment, as in the first embodiment, the scribe line SL is formed horizontally with the glass substrate 1 at the top and the silicon substrate 2 at the bottom. The bonding substrate 10 is held in the posture.

  Schematically speaking, the scribe line SL in the present embodiment is formed as shown in FIG. 11B in a state where the bonded substrate 10 is held in this posture on a stage of a known laser processing apparatus (not shown). The laser beam LB is irradiated to the main surface 1a of the glass substrate 1 from the emission source 401 provided in the laser processing apparatus, and the laser beam LB is scanned along the planned division position A.

In such a case, the scribe line SL may be an altered region caused by heating by the irradiation with the laser beam LB and subsequent cooling, or formed by evaporation of a substance present in the irradiated region of the laser beam LB. It may be a groove portion having a V-shape, a U-shape or other shapes in cross-section. The type of laser light source (CO ₂ laser, UV laser, YAG laser, etc.), irradiation conditions, irradiation optical system, and the like may be appropriately determined according to the type of scribe line SL to be actually formed.

  Or in FIG.11 (b) and FIG.11 (c), although the case where the scribe line SL is formed in the main surface 1a of the glass substrate 1 is illustrated, the so-called stealth dicing technique is used. A mode in which a melt-modified region is formed only inside and the melt-modified region is a scribe line SL may be used.

  As shown by arrows AR31 and AR32 in FIG. 11B, the scribe line SL is formed by sequentially irradiating the laser light LB along the individual division planned positions A, and finally, As shown in FIG. 11C, scribe lines SL are formed at all the planned division positions A.

  The procedure after forming the scribe line SL may be the same as that in the first embodiment. Therefore, also in the present embodiment, a semiconductor chip with solder balls having excellent quality can be obtained more efficiently and at a lower cost than in the prior art, as in the first embodiment.

DESCRIPTION OF SYMBOLS 1 Glass substrate 1A Glass substrate layer 1a Main surface (of glass substrate) 2 Silicon substrate 2A Silicon substrate layer 2a (Main surface of silicon substrate) 3, 3A Adhesive layer 4, 4A Upper layer 10 Bonded substrate 10A Semiconductor chip 101 Scribing wheel 201 Dicing blade 300 Break device 301 Support section 301a (support section) upper surface 302 Break blade 302a (break blade) blade edge 302b (blade edge) side surface 401 Output source A Divided progress position B Split progress estimated position CR, CR2 Vertical crack CR1 Crack DG Dicing groove DG1 (Dicing groove) bottom DG2 (Dicing groove) Open end LB Laser beam SB Solder ball SL Scribe line

Claims (8)

The silicon substrate and the glass substrate are bonded together with an adhesive layer, and the predetermined division position on the one main surface of the glass substrate that forms one main surface of the bonded substrate in which a plurality of division planned positions are defined A scribe line forming apparatus for forming a scribe line by a scribe means;
A groove is formed by a predetermined groove forming means from the one main surface of the silicon substrate to the middle of the adhesive layer at the planned division position on one main surface of the silicon substrate forming the other main surface of the bonded substrate. A dicing groove forming device,
A solder ball forming device for forming a solder ball for each unit region on the upper surface of the silicon substrate in the bonded substrate in which the scribe line and the groove are formed;
A breaking device for obtaining a plurality of semiconductor chips with solder balls by breaking the bonded substrate formed with the solder balls between the scribe line and the groove;
An apparatus for manufacturing a semiconductor chip with solder balls, comprising: A method of producing a semiconductor chip with solder balls,
A silicon substrate and a glass substrate are bonded to each other with an adhesive layer, and a plurality of division positions are determined so that a unit region that becomes a separate semiconductor chip is formed by dividing the silicon substrate and the glass substrate. Preparing a bonded substrate, a bonded substrate preparing step,
A scribe line forming step of forming a scribe line by a predetermined scribe means at the planned division position on one main surface of the glass substrate forming one main surface of the bonded substrate;
A groove is formed by a predetermined groove forming means from the one main surface of the silicon substrate to the middle of the adhesive layer at the planned division position on one main surface of the silicon substrate forming the other main surface of the bonded substrate. A dicing groove forming step,
Forming a solder ball for each unit region with respect to the upper surface of the one main surface side of the silicon substrate in the bonded substrate in which the scribe line and the groove are formed;
A breaking step of obtaining a plurality of semiconductor chips with solder balls by breaking the bonded substrate in which the solder balls are formed between the scribe line and the groove;
A method for producing a semiconductor chip with solder balls, comprising: A method for producing a semiconductor chip with solder balls according to claim 2,
In the breaking step, the bonded substrate is placed on the upper surface of the support portion made of an elastic body so that the silicon substrate side is the uppermost portion and the glass substrate side is the lowermost portion. Breaking the bonded substrate by bringing the break blade into contact with the scheduled division position from above the substrate and further pushing down,
A method for manufacturing a semiconductor chip with solder balls. A method for producing a semiconductor chip with solder balls according to claim 3,
In the breaking step, the bonding is performed by extending the vertical crack from the scribe line while tearing the adhesive layer by the break blade by further pressing down the break blade after contacting the bottom of the groove. Dividing the board,
A method for manufacturing a semiconductor chip with solder balls. A method for producing a semiconductor chip with solder balls according to claim 3,
In the breaking step, the side surface of the break blade is brought into contact with the opening end portion of the groove portion in the one main surface of the silicon substrate and further pressed down to tear the adhesive layer and from the scribe line. Dividing the bonded substrate by extending vertical cracks,
A method for manufacturing a semiconductor chip with solder balls. A method for producing a semiconductor chip with solder balls according to any one of claims 2 to 5,
The predetermined scribing means is a scribing wheel, and in the scribing line forming step, the scribing line is formed by pressing and rolling the scribing wheel along the planned division position.
A method for manufacturing a semiconductor chip with solder balls. A method for producing a semiconductor chip with solder balls according to any one of claims 2 to 5,
The predetermined scribe means is a laser beam, and in the scribe line forming step, the laser beam is irradiated to the planned division position on one main surface of the glass substrate that forms one main surface of the bonded substrate. Forming the scribe line by causing alteration or evaporation along the planned division position with respect to the glass substrate;
A method for manufacturing a semiconductor chip with solder balls. A method for producing a semiconductor chip with solder balls according to any one of claims 2 to 7,
The predetermined groove forming means is a dicer;
A method for manufacturing a semiconductor chip with solder balls.

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