JP7018331B2 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

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Publication number
JP7018331B2
JP7018331B2 JP2018030501A JP2018030501A JP7018331B2 JP 7018331 B2 JP7018331 B2 JP 7018331B2 JP 2018030501 A JP2018030501 A JP 2018030501A JP 2018030501 A JP2018030501 A JP 2018030501A JP 7018331 B2 JP7018331 B2 JP 7018331B2
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Prior art keywords
focus ring
substrate
plasma processing
plasma
voltage
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JP2018030501A
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Japanese (ja)
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JP2019145729A (ja
JP2019145729A5 (https=
Inventor
利文 永岩
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018030501A priority Critical patent/JP7018331B2/ja
Priority to TW108105546A priority patent/TWI791093B/zh
Priority to KR1020190020266A priority patent/KR102661857B1/ko
Priority to US16/282,828 priority patent/US10714318B2/en
Publication of JP2019145729A publication Critical patent/JP2019145729A/ja
Priority to US16/897,747 priority patent/US11342165B2/en
Publication of JP2019145729A5 publication Critical patent/JP2019145729A5/ja
Application granted granted Critical
Publication of JP7018331B2 publication Critical patent/JP7018331B2/ja
Priority to KR1020240054672A priority patent/KR102939511B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/207—Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
JP2018030501A 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置 Active JP7018331B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018030501A JP7018331B2 (ja) 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置
TW108105546A TWI791093B (zh) 2018-02-23 2019-02-20 電漿處理方法
KR1020190020266A KR102661857B1 (ko) 2018-02-23 2019-02-21 플라즈마 처리 방법
US16/282,828 US10714318B2 (en) 2018-02-23 2019-02-22 Plasma processing method
US16/897,747 US11342165B2 (en) 2018-02-23 2020-06-10 Plasma processing method
KR1020240054672A KR102939511B1 (ko) 2018-02-23 2024-04-24 플라즈마 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018030501A JP7018331B2 (ja) 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2019145729A JP2019145729A (ja) 2019-08-29
JP2019145729A5 JP2019145729A5 (https=) 2020-11-12
JP7018331B2 true JP7018331B2 (ja) 2022-02-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018030501A Active JP7018331B2 (ja) 2018-02-23 2018-02-23 プラズマ処理方法及びプラズマ処理装置

Country Status (4)

Country Link
US (2) US10714318B2 (https=)
JP (1) JP7018331B2 (https=)
KR (2) KR102661857B1 (https=)
TW (1) TWI791093B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020023409A1 (en) * 2018-07-24 2020-01-30 Applied Materials, Inc. Optically transparent pedestal for fluidly supporting a substrate
US20210195726A1 (en) * 2019-12-12 2021-06-24 James Andrew Leskosek Linear accelerator using a stacked array of cyclotrons
JP7475193B2 (ja) 2020-05-07 2024-04-26 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
KR102807826B1 (ko) * 2021-01-08 2025-05-14 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
CN119852157B (zh) * 2025-01-02 2025-12-05 湖北江城实验室 一种等离子体处理装置及其处理晶片的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245510A (ja) 2005-03-07 2006-09-14 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2007258417A (ja) 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
JP2008227063A (ja) 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法
JP2012186497A (ja) 1999-12-30 2012-09-27 Lam Research Corporation 電極アッセンブリ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5080810B2 (ja) * 2004-11-02 2012-11-21 パナソニック株式会社 プラズマ処理方法およびプラズマ処理装置
US20070224709A1 (en) 2006-03-23 2007-09-27 Tokyo Electron Limited Plasma processing method and apparatus, control program and storage medium
KR20080001164A (ko) * 2006-06-29 2008-01-03 주식회사 하이닉스반도체 홀 휨 방지를 위한 플라즈마식각장치 및 그를 이용한 식각방법
KR20080023569A (ko) * 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
JP5281309B2 (ja) * 2008-03-28 2013-09-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法及びコンピュータ読み取り可能な記憶媒体
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5395633B2 (ja) * 2009-11-17 2014-01-22 東京エレクトロン株式会社 基板処理装置の基板載置台
JP5948026B2 (ja) * 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
JP6556046B2 (ja) * 2015-12-17 2019-08-07 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP2017126727A (ja) * 2016-01-15 2017-07-20 東京エレクトロン株式会社 載置台の構造及び半導体処理装置
US11404249B2 (en) * 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012186497A (ja) 1999-12-30 2012-09-27 Lam Research Corporation 電極アッセンブリ
JP2006245510A (ja) 2005-03-07 2006-09-14 Hitachi High-Technologies Corp プラズマ処理方法およびプラズマ処理装置
JP2007258417A (ja) 2006-03-23 2007-10-04 Tokyo Electron Ltd プラズマ処理方法
JP2008227063A (ja) 2007-03-12 2008-09-25 Tokyo Electron Ltd プラズマ処理装置及びプラズマ分布補正方法

Also Published As

Publication number Publication date
US10714318B2 (en) 2020-07-14
JP2019145729A (ja) 2019-08-29
KR20240060768A (ko) 2024-05-08
KR20190101889A (ko) 2019-09-02
US20190267217A1 (en) 2019-08-29
TW201937594A (zh) 2019-09-16
KR102939511B1 (ko) 2026-03-13
US11342165B2 (en) 2022-05-24
KR102661857B1 (ko) 2024-04-26
TWI791093B (zh) 2023-02-01
US20200303170A1 (en) 2020-09-24

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